Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/1999
08/17/1999CA2149066C Accurate in-situ lattice matching by reflection high energy electron dynamics
08/17/1999CA2146274C Low-power-dissipation cmos circuits
08/17/1999CA2146036C Ph adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
08/17/1999CA2143077C Process for fabricating an integrated circuit
08/12/1999WO1999040763A1 Microelectronic lead structures with plural conductors
08/12/1999WO1999040761A1 Components with releasable leads
08/12/1999WO1999040631A1 A field-effect transistor
08/12/1999WO1999040630A2 Semiconductor device with a bipolar transistor, and method of manufacturing such a device
08/12/1999WO1999040629A1 Quasi-mesh gate structure including plugs connecting source regions with backside for lateral rf mos devices
08/12/1999WO1999040623A1 Exposure system and apparatus for positioning substrate storing cassette
08/12/1999WO1999040622A1 Electrostatic substrate holder and method for using same
08/12/1999WO1999040620A1 Improved method and apparatus for adhering and centering particles to the tacky areas on a surface containing an array of tacky and non-tacky areas
08/12/1999WO1999040619A1 Reduced boron diffusion by use of a preanneal
08/12/1999WO1999040618A1 Process of manufacturing a semiconductor device including a buried channel field effect transistor
08/12/1999WO1999040615A1 Method and apparatus for low-temperature annealing of metallization micro-structures in the production of a microelectronic device
08/12/1999WO1999040614A2 Method of manufacturing a semiconductor device with linearly doping profile
08/12/1999WO1999040612A1 Post-cmp wet-hf cleaning station
08/12/1999WO1999040611A2 Wafer cleaning method and system
08/12/1999WO1999040609A1 Plasma assisted processing chamber with separate control of species density
08/12/1999WO1999040608A1 High selectivity etch using an external plasma discharge
08/12/1999WO1999040607A1 Methods for reducing mask erosion during plasma etching
08/12/1999WO1999040141A1 Thermosetting one-component underfill compound
08/12/1999WO1999039994A1 Sheet support container
08/12/1999WO1999039860A1 Permanent magnet ecr plasma source with magnetic field optimization
08/12/1999WO1999025905A9 Clamshell apparatus for electrochemically treating semiconductor wafers
08/12/1999WO1999023684A9 Apparatus and method for secondary electron emission microscope
08/12/1999DE19904781A1 Dielectric capacitor especially a ferroelectric capacitor for a RAM
08/12/1999DE19904311A1 Carbon-doped silicon oxide thin film to produce an insulating thin film for a semiconductor device
08/12/1999DE19904065A1 Thermally stable silicide is produced e.g. for the gates, emitters, local connection regions and interconnection lines of MOS and bipolar transistors
08/12/1999DE19844751A1 Semiconductor component for integrated circuit
08/12/1999DE19839612A1 Plasma generator, esp. for processes such as etching, cleaning and thin film production on semiconducting surfaces
08/12/1999DE19833214C1 Vertical J-FET semiconductor device
08/12/1999DE19808182C1 Electrically programmable memory cell arrangement
08/12/1999DE19806852C1 Safety arrangement for transport system for semiconductor manufacture with a drive with a pneumatically driven, linearly movable piston in a cylinder.
08/12/1999DE19805549C1 Bond contacting of terminal wires to chip contact pads method
08/12/1999DE19804595A1 Thermisch härtbare Ein-Komponenten-Underfill-Masse Thermally curable one-component underfill mass
08/12/1999DE19804094A1 Coating substrate with polycrystalline semiconductor in production of active drive matrix for an LCD
08/12/1999DE19803852A1 Two-side oxidized silicon wafer for production of SOI devices, optical waveguide structures and micro-systems
08/12/1999DE19803423A1 Substrathalterung für SiC-Epitaxie Substrate holder for SiC epitaxy
08/12/1999DE19758533A1 Object surface structuring method for processing of semiconductor wafer
08/12/1999DE19755135C1 Semiconductor structure having IC structure, especially an SOI IC, e.g. a CMOS-IC, formed in silicon@ island
08/11/1999EP0935389A1 A display housing
08/11/1999EP0935343A1 Sr flip flop
08/11/1999EP0935293A2 Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device
08/11/1999EP0935292A2 Method of manufacturing a MOSFET
08/11/1999EP0935291A1 Controllable solid-state device comprising a tunnel barrier structure
08/11/1999EP0935290A2 Power semiconductor device and method
08/11/1999EP0935288A2 Sealed structure of semiconductor circuit and method for production thereof
08/11/1999EP0935287A2 Molding die and marking method for semiconductor devices
08/11/1999EP0935285A1 Method for dual gate oxide dual workfunction CMOS
08/11/1999EP0935284A1 CVD of silicon containing film using Si2H6
08/11/1999EP0935283A2 Silicone polymer insulation film on semiconductor substrate and method for forming the film
08/11/1999EP0935282A2 Semiconductor device with a Silicon-rich silicide contact layer and method for manufacturing the same
08/11/1999EP0935280A1 SOI substrate and method of manufacturing the same
08/11/1999EP0935279A2 Device and method for load locking for semiconductuctor processing
08/11/1999EP0935256A1 Test method for writable nonvolatile semiconductor memory device
08/11/1999EP0935255A2 Flash EEPROM system
08/11/1999EP0935172A1 Photosensitive resin, resist based on the photosensitive resin, exposure method using the resist, and semiconductor device obtained by the exposure method
08/11/1999EP0934802A2 Method of dispensing abrasive materials, and an abrasive material.
08/11/1999EP0934801A2 Method and apparatus for polishing work
08/11/1999EP0934603A1 Floating gate memory cell with charge leakage prevention
08/11/1999EP0934602A1 Short channel flash eeprom device having a double diffused source and method of manufacturing the same
08/11/1999EP0934601A1 Substrate-treating device
08/11/1999EP0934433A1 Method for depositing fluorine doped silicon dioxide films
08/11/1999EP0934127A1 Process for making a parylene coating
08/11/1999EP0745270A4 Compliant electrically connective bumps for an adhesive flip chip integrated circuit device and methods for forming same
08/11/1999CN1225750A Process for mfg. semiconductor package and circuit board assembly
08/11/1999CN1225747A Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
08/11/1999CN1225724A Wafer-level burn-in and test
08/11/1999CN1225512A Charge transfer device having three pixel rows arranged adjacently to each other
08/11/1999CN1225511A Static randon access memory device photoelectric tube structure and method for mfg. same
08/11/1999CN1225510A Plastic-encapsulated semiconductor device equipped with LOC package structure
08/11/1999CN1225509A 半导体器件 Semiconductor devices
08/11/1999CN1225508A Visual inspection apparatus of tape carrier package
08/11/1999CN1225507A Method for dual gate oxide dual workfunction CMOS
08/11/1999CN1225506A Method and apparatus for minimizing diffusion in stacked capacitors formed on silicon plugs
08/11/1999CN1225505A Method of fabricating semiconductor chips with silicide and implanted junctions
08/11/1999CN1225504A Apparatus for forming thin film using microwave and method therefor
08/11/1999CN1225503A Method of mfg. semiconductor device
08/11/1999CN1225502A Method of separating chips from semiconductor wafer
08/11/1999CN1225501A Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
08/11/1999CN1225500A Semiconductor article and method for mfg. the same
08/11/1999CN1225499A Semiconductor substrate and method for mfg. the same
08/11/1999CN1225498A Semiconductor wet process equipment with emergency output port and method for loading and unloading lots in the same
08/11/1999CN1225482A Sputtering apparatus simulation method
08/11/1999CN1225466A Integrated management of semiconductor process data
08/11/1999CN1225459A Method for controlling semiconductor fabricating equipments
08/11/1999CN1225451A Method and system for measuring particles in liquid sample
08/11/1999CN1044649C Refractory metal capped low resistivity metal conductor lines and vias formed, and method for mfg. same
08/11/1999CN1044644C Method and device for testing integrated circuit soldered on a board
08/10/1999US5937399 Semiconductor integrated circuit
08/10/1999US5937327 Method for improving wiring contact in semiconductor devices
08/10/1999US5937326 Method for making semiconductor device having via hole
08/10/1999US5937325 Formation of low resistivity titanium silicide gates in semiconductor integrated circuits
08/10/1999US5937324 Method for forming a line-on-line multi-level metal interconnect structure for use in integrated circuits
08/10/1999US5937323 Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
08/10/1999US5937322 Silicon oxide film is formed on a wire array by cvd employing a gas mixture composed of a gas containing silicon atoms and hydrogen peroxide, and the thickness of the silicon oxide film in the region apart from the wire array is formed to be at
08/10/1999US5937321 Method for manufacturing ceramic multilayer circuit
08/10/1999US5937319 Method of making a metal oxide semiconductor (MOS) transistor polysilicon gate with a size beyond photolithography limitation by using polysilicidation and selective etching
08/10/1999US5937318 Monocrystalline three-dimensional integrated circuit