Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
08/1999
08/10/1999US5937316 SiC member and a method of fabricating the same
08/10/1999US5937315 A first nickel silicide layer is formed between a gate oxide and a polycrystalline silicon gate electrode. further, second nickel silicide layers are formed over highly-doped source/drain regions.
08/10/1999US5937314 Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
08/10/1999US5937313 Method of forming quantum wire for compound semiconductor
08/10/1999US5937312 Single-etch stop process for the manufacture of silicon-on-insulator wafers
08/10/1999US5937311 Method of forming isolation region
08/10/1999US5937310 Reduced bird's beak field oxidation process using nitrogen implanted into active region
08/10/1999US5937309 Method for fabricating shallow trench isolation structure
08/10/1999US5937308 Semiconductor trench isolation structure formed substantially within a single chamber
08/10/1999US5937307 Process for fabricating DRAM capacitor
08/10/1999US5937306 Method of fabricating a capacitor of a semiconductor device
08/10/1999US5937304 Method for fabricating semiconductor device and method for producing liquid crystal display apparatus
08/10/1999US5937303 High dielectric constant gate dielectric integrated with nitrogenated gate electrode
08/10/1999US5937302 Method of forming lightly doped drain region and heavily doping a gate using a single implant step
08/10/1999US5937301 Method of making a semiconductor device having sidewall spacers with improved profiles
08/10/1999US5937300 Semiconductor apparatus and fabrication method thereof
08/10/1999US5937299 Method for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewalls
08/10/1999US5937298 Method for manufacturing electrostatic discharge protection device
08/10/1999US5937297 Method for making sub-quarter-micron MOSFET
08/10/1999US5937296 Memory cell that includes a vertical transistor and a trench capacitor
08/10/1999US5937295 Nano-structure memory device
08/10/1999US5937294 Method for making a container capacitor with increased surface area
08/10/1999US5937293 Method of fabricating a source/drain with LDD and halo
08/10/1999US5937292 Nitride cap formation in a DRAM trench capacitor
08/10/1999US5937291 Method for forming poly-via connection between load transistor drain and driver transistor gate in SRAM
08/10/1999US5937290 Method of manufacturing semiconductor integrated circuit devices using phase shifting mask
08/10/1999US5937289 Providing dual work function doping
08/10/1999US5937288 CMOS integrated circuits with reduced substrate defects
08/10/1999US5937287 Fabrication of semiconductor structures by ion implantation
08/10/1999US5937286 Forming a well in a semiconductor substrate by using a first photoresist pattern as a mask, and patterning an insulating film formed on said semiconductor substrate, forming a trench using the patterned film as a mask; second photoresist patern
08/10/1999US5937285 Method of fabricating submicron FETs with low temperature group III-V material
08/10/1999US5937283 Method of making a dual gate trench thin film transistor
08/10/1999US5937282 Method for producing semiconductor device
08/10/1999US5937279 Semiconductor device, and manufacturing method of the same
08/10/1999US5937278 Method of manufacturing lead frame having inner lead connected to outer lead by metal etch stop layer
08/10/1999US5937277 Semiconductor device with reliable electrodes of projecting shape and method of forming same
08/10/1999US5937274 Fabrication method for AlGaIn NPAsSb based devices
08/10/1999US5937273 Fabricating compound semiconductor by varying ratio of stagnant layer thickness and mean free path of seed material
08/10/1999US5937270 Method of efficiently laser marking singulated semiconductor devices
08/10/1999US5937269 Graphics assisted manufacturing process for thin-film devices
08/10/1999US5937223 Processing apparatus
08/10/1999US5937184 Synthesis of application-specific subsystems by selective migration
08/10/1999US5937154 Manufacturing functional testing of computing devices using microprogram based functional tests applied via the devices own emulation debug port
08/10/1999US5937142 Multi-zone illuminator for rapid thermal processing
08/10/1999US5936971 Multi-state flash EEprom system with cache memory
08/10/1999US5936888 Semiconductor non-volatile memory device having floating gate type reference cell short-circuited between control gate electrode and floating gate electrode
08/10/1999US5936887 Non-volatile memory device with NAND type cell structure
08/10/1999US5936886 Semiconductor memory device having reduced variation of erasing and writing voltages supplied to each memory array
08/10/1999US5936883 Split gate type transistor memory device
08/10/1999US5936881 Semiconductor memory device
08/10/1999US5936875 Integrated circuit memory devices including overlapping power lines and bit lines
08/10/1999US5936874 High density semiconductor memory and method of making
08/10/1999US5936847 Low profile electronic circuit modules
08/10/1999US5936845 IC package and IC probe card with organic substrate
08/10/1999US5936832 Semiconductor memory device and method of operation thereof
08/10/1999US5936831 Thin film tantalum oxide capacitors and resulting product
08/10/1999US5936829 Thermally conductive chuck for vacuum processor
08/10/1999US5936733 Endpoint detector and method for measuring a change in wafer thickness in chemical-mechanical polishing of semiconductor wafers
08/10/1999US5936713 Method and device for producing features on a photolithographic layer
08/10/1999US5936712 Exposure method and apparatus including focus control
08/10/1999US5936711 Projection exposure method and projection exposure apparatus
08/10/1999US5936707 Multi-level reticle system and method for forming multi-level resist profiles
08/10/1999US5936492 Ribbon, bonding wire and microwave circuit package
08/10/1999US5936481 System for impedance matching and power control for apparatus for high frequency plasma treatment
08/10/1999US5936477 Low voltage operated oscillator using transistors with forward biased source-tub junctions
08/10/1999US5936459 Internal potential generating circuit and boosted potential generating unit using pumping operation
08/10/1999US5936455 MOS integrated circuit with low power consumption
08/10/1999US5936448 Integrated circuit having independently testable input-output circuits and test method therefor
08/10/1999US5936440 Inductive load driving apparatus
08/10/1999US5936436 Substrate potential detecting circuit
08/10/1999US5936423 Semiconductor IC with an output circuit power supply used as a signal input/output terminal
08/10/1999US5936420 Semiconductor inspecting apparatus
08/10/1999US5936417 Test head for IC tester
08/10/1999US5936413 Method and device for measuring an ion flow in a plasma
08/10/1999US5936310 Encapsulated semiconductor device
08/10/1999US5936308 Interlocking conductive plug for use with an integrated circuit
08/10/1999US5936307 Surface modification method for film stress reduction
08/10/1999US5936306 TiSi2 /TiN clad interconnect technology
08/10/1999US5936305 Stacked leads-over chip multi-chip module
08/10/1999US5936303 Plastic molded semiconductor package
08/10/1999US5936302 Speaker diaphragm
08/10/1999US5936301 Crack resistant passivation layer
08/10/1999US5936300 Semiconductor device with film covering
08/10/1999US5936299 Substrate contact for integrated spiral inductors
08/10/1999US5936297 Programmable semiconductor element having an antifuse structure
08/10/1999US5936296 Integrated circuits having metallic fuse links
08/10/1999US5936295 Multilevel interconnect structure with air gaps formed between metal leads
08/10/1999US5936292 Structure of thin film transistor and gate terminal having a capacitive structure composed of the TFT elements
08/10/1999US5936291 Thin film transistor and method for fabricating the same
08/10/1999US5936290 Semiconductor device having an insulated gate field effect transistor and a well spaced from the channel region of the insulated gate field effect transistor
08/10/1999US5936289 Semiconductor device
08/10/1999US5936288 Semiconductor integrated circuit device and low breakdown voltage zener diode
08/10/1999US5936287 Nitrogenated gate structure for improved transistor performance and method for making same
08/10/1999US5936286 Differential poly-edge oxidation for stable SRAM cells
08/10/1999US5936285 Integrated circuit
08/10/1999US5936283 MOSFET for input/output protective circuit having a multi-layered contact structure with multiple contact holes on a single diffusion layer
08/10/1999US5936282 Semiconductor device having input protection circuit
08/10/1999US5936280 Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices
08/10/1999US5936279 Method of fabricating self-align contact window with silicon nitride side wall
08/10/1999US5936278 Semiconductor on silicon (SOI) transistor with a halo implant