| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 03/14/2000 | US6037207 Method of manufacturing semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity |
| 03/14/2000 | US6037206 Method of fabricating a capacitor of a dynamic random access memory |
| 03/14/2000 | US6037205 Forming a nitride film on a semiconductor layer by annealing, oxidizing the nitride film through annealing using nitrogen oxide gas to form oxidized nitride film and insulating semiconductor layer from conductive layer subsquently formed |
| 03/14/2000 | US6037204 Silicon and arsenic double implanted pre-amorphization process for salicide technology |
| 03/14/2000 | US6037203 Method of fabricating a semiconductor device having triple well structure |
| 03/14/2000 | US6037202 Method for growing an epitaxial layer of material using a high temperature initial growth phase and a low temperature bulk growth phase |
| 03/14/2000 | US6037201 Method for manufacturing mixed-mode devices |
| 03/14/2000 | US6037200 Compound semiconductor device and fabrication method |
| 03/14/2000 | US6037199 SOI device for DRAM cells beyond gigabit generation and method for making the same |
| 03/14/2000 | US6037198 Gradual change of the oxygen pressure in the molecular beam epitaxy apparatus using the silicon as an original material for growing the composite interfacial layer of silicon dioxide and silicon with gradual change in ratio |
| 03/14/2000 | US6037197 Preparation method of semiconductor device |
| 03/14/2000 | US6037196 Process for producing an integrated circuit device with at least one MOS transistor |
| 03/14/2000 | US6037195 Process of producing thin film transistor |
| 03/14/2000 | US6037194 Method for making a DRAM cell with grooved transfer device |
| 03/14/2000 | US6037192 Process of assembling an integrated circuit and a terminal substrate using solder reflow and adhesive cure |
| 03/14/2000 | US6037191 Coating a phosphor on multiple regions on single-crystal semiconductor wafer at predetermined intervals, forming a waterproofing protective film on the phosphor, cutting the wafer using cutting water at a high pressure |
| 03/14/2000 | US6037189 Integrated waveguide device and method of fabricating the integrated waveguide device |
| 03/14/2000 | US6037107 Exposing to activation radiation a positive working photoresist comprising an alkali soluble resin substituted with an acid labile blocking group to generate halogenated sulfonic acid by photolysis |
| 03/14/2000 | US6037097 E-beam application to mask making using new improved KRS resist system |
| 03/14/2000 | US6037043 UV-hardenable and thermally hardenable epoxy resins for underfilling electrical and electronic components |
| 03/14/2000 | US6037018 Forming shallow trench isolation regions having protective oxide liner layers on the trench walls |
| 03/14/2000 | US6037017 Method for formation of multilayer film |
| 03/14/2000 | US6037013 Barrier/liner with a SiNx-enriched surface layer on MOCVD prepared films |
| 03/14/2000 | US6037001 Method for the chemical vapor deposition of copper-based films |
| 03/14/2000 | US6036889 Efficiently consolidated to solid metal and bonded firmly to circuit board substrates at low temperature |
| 03/14/2000 | US6036878 Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| 03/14/2000 | US6036877 Plasma reactor with heated source of a polymer-hardening precursor material |
| 03/14/2000 | US6036876 Reactive gas including a halogen compound and an oxygen-containing compound is supplied and an electric field is applied to react the gas with the material layer forming volatile byproducts of the reactive gas and material layer |
| 03/14/2000 | US6036875 Method for manufacturing a semiconductor device with ultra-fine line geometry |
| 03/14/2000 | US6036836 Forming studs to connect spaced high density chips to the board by covering first copper layer with photoresist, then etching pattern and repeating, finally plating with copper so that first and last copper layers are separated |
| 03/14/2000 | US6036834 Selective electroplating of supported electrodes, then charging yields miniaturized biosensors |
| 03/14/2000 | US6036816 Apparatus for processing a sample having a metal laminate |
| 03/14/2000 | US6036809 Laser ablation of interface or cutting to remove film containing dielectrics and metal connectors from carrier for use in microelectronics, semiconductors |
| 03/14/2000 | US6036798 Process for producing electronic part with laminated substrates |
| 03/14/2000 | US6036793 Method of heat treating oxygen-sensitive products |
| 03/14/2000 | US6036785 Directing a slurry including scrubber particles of specified size ranges against exposed surface of object, immersing in rinse liquid which is subjected tio ultrosonic waves of selected wavelength |
| 03/14/2000 | US6036782 Shower head |
| 03/14/2000 | US6036781 Apparatus for guiding air current in a wafer loading chamber for chemical vapor deposition equipment |
| 03/14/2000 | US6036776 Method and device for manufacturing single crystals |
| 03/14/2000 | US6036773 Configurating substrate to have fast and slow growth surfacesand allowing excess group 3 atoms on fast growth surface tomigrate to slow growth surface, thus achieving monolayer on the fast growth surface |
| 03/14/2000 | US6036772 Method for making semiconductor device |
| 03/14/2000 | US6036771 Method of manufacturing optical semiconductor device |
| 03/14/2000 | US6036769 Preparation of semiconductor substrates |
| 03/14/2000 | US6036741 Process for producing high-purity ruthenium |
| 03/14/2000 | US6036583 Conditioner head in a substrate polisher and method |
| 03/14/2000 | US6036581 Substrate cleaning method and apparatus |
| 03/14/2000 | US6036579 Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto |
| 03/14/2000 | US6036482 Heat treatment method |
| 03/14/2000 | US6036426 Wafer handling method and apparatus |
| 03/14/2000 | US6036356 In-situ slurry mixing apparatus |
| 03/14/2000 | US6036196 Collet arrangement for integrated circuit structures |
| 03/14/2000 | US6036162 Vibration isolator and method of isolating vibration |
| 03/14/2000 | US6036080 Wire bonding method |
| 03/14/2000 | US6036031 Substrate cassette and side rail therefor |
| 03/14/2000 | US6036023 Heat-transfer enhancing features for semiconductor carriers and devices |
| 03/14/2000 | US6035871 Apparatus for producing semiconductors and other devices and cleaning apparatus |
| 03/14/2000 | US6035868 Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber |
| 03/14/2000 | US6035845 Saw strip for fixing a crystal and process for cutting off wafers |
| 03/14/2000 | US6035805 Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment |
| 03/14/2000 | US6035804 Process chamber apparatus |
| 03/14/2000 | US6035803 Method and apparatus for controlling the deposition of a fluorinated carbon film |
| 03/14/2000 | US6035609 Ultra high purity gas distribution component with integral valved coupling and methods for its use |
| 03/14/2000 | US6035530 Method of manufacturing interconnect |
| 03/14/2000 | US6035528 Method of manufacturing electronic components |
| 03/09/2000 | WO2000013299A1 A coupling for active semi-conductor components |
| 03/09/2000 | WO2000013236A2 Layered dielectric on silicon carbide semiconductor structures |
| 03/09/2000 | WO2000013235A1 Ternary nitride-carbide barrier layers |
| 03/09/2000 | WO2000013234A1 Integrated circuits |
| 03/09/2000 | WO2000013231A1 Isolated interconnect studs and method for forming the same |
| 03/09/2000 | WO2000013230A1 Techniques for forming contact holes through to a silicon layer of a substrate |
| 03/09/2000 | WO2000013229A1 Bump joining judging device and method, and semiconductor component production device and method |
| 03/09/2000 | WO2000013228A1 Method for connecting electronic components to a substrate, and a method for checking such a connection |
| 03/09/2000 | WO2000013227A2 Method of manufacturing a semiconductor device with a bipolar transistor |
| 03/09/2000 | WO2000013226A1 Process for preparing an ideal oxygen precipitating silicon wafer |
| 03/09/2000 | WO2000013225A1 A process for back-etching polysilicon and application to the fabrication of a trench capacitor |
| 03/09/2000 | WO2000013224A1 Microelectronic structure, production method and utilization of the same |
| 03/09/2000 | WO2000013223A1 Nanoporous dielectric thin films |
| 03/09/2000 | WO2000013222A1 Silane-based nanoporous silica thin films |
| 03/09/2000 | WO2000013221A1 Process for optimizing mechanical strength of nanoporous silica |
| 03/09/2000 | WO2000013220A1 Nanoporous silica via combined stream deposition |
| 03/09/2000 | WO2000013219A1 Apparatus for plasma processing |
| 03/09/2000 | WO2000013218A1 Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
| 03/09/2000 | WO2000013217A1 Abrasive liquid for metal and method for polishing |
| 03/09/2000 | WO2000013216A1 Capacitors comprising roughened platinum layers, methods of forming roughened layers of platinum and methods of forming capacitors |
| 03/09/2000 | WO2000013215A1 Ruthenium silicide diffusion barrier layers and methods of forming same |
| 03/09/2000 | WO2000013214A1 Soi substrate and method for manufacturing the same |
| 03/09/2000 | WO2000013213A1 Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits |
| 03/09/2000 | WO2000013212A1 Voltage-cycling recovery of process-damaged ferroelectric films |
| 03/09/2000 | WO2000013211A2 Silicon on insulator structure from low defect density single crystal silicon |
| 03/09/2000 | WO2000013209A2 Thermally annealed silicon wafers having improved intrinsic gettering |
| 03/09/2000 | WO2000013208A2 Selectively doped trench device isolation |
| 03/09/2000 | WO2000013207A2 Method for forming a metal film |
| 03/09/2000 | WO2000013206A2 METHOD FOR DOPING EXTERNAL BASE CONNECTION AREAS OF Si-BASED SINGLE POLYSILICON NPN BI-POLAR TRANSISTORS |
| 03/09/2000 | WO2000013203A1 Plasma reactor with electrode arrangement for providing a grounding path for the plasma, and method of manufacturing the same |
| 03/09/2000 | WO2000013190A1 Conductive paste, conductive structure using the same, electronic part, module, circuit board, method for electrical connection, method for manufacturing circuit board, and method for manufacturing ceramic electronic part |
| 03/09/2000 | WO2000013151A1 Security system |
| 03/09/2000 | WO2000013030A1 High resolution analytical probe station |
| 03/09/2000 | WO2000012958A1 Methods and apparatus for measuring the thickness of a film, particularly of a photoresist film on a semiconductor substrate |
| 03/09/2000 | WO2000012945A1 Method and apparatus for thermal processing of semiconductor substrates |
| 03/09/2000 | WO2000012787A1 Silicon single crystal wafer, epitaxial silicon wafer, and method for producing them |