Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2000
03/21/2000US6040093 Method and transferring conductor patterns to a film carrier, and masks and film carriers to be used therefor
03/21/2000US6040048 Energy beam curable hydrophilic pressure sensitive adhesive composition and use thereof
03/21/2000US6040039 Printed circuits with thermal conductivity, oxide layer on silicon nitride substrate with metal circuits
03/21/2000US6040021 Vapor deposition process for metal films on substrates with metal halide gas, hydrogen and noble gas with metal halide reduction with hydrogen
03/21/2000US6040020 Method of forming a film having enhanced reflow characteristics at low thermal budget
03/21/2000US6040019 Method of selectively annealing damaged doped regions
03/21/2000US6040011 Vapor deposition of a coating on a substrate, purging
03/21/2000US6040010 Vapor deposition of film on a semiconductor wafers, gas chambers, active gases and delivery
03/21/2000US6039888 Multilayer element with etch layer on semiconductor, patterns, photoresists with exposure and development, selective removal of organic antireflective coating
03/21/2000US6039857 Method for forming a polyoxide film on doped polysilicon by anodization
03/21/2000US6039854 Substrate clamp design for minimizing substrate to clamp sticking during thermal processing of thermally flowable layers
03/21/2000US6039851 Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
03/21/2000US6039836 Focus rings
03/21/2000US6039835 Etching apparatus and method of etching a substrate
03/21/2000US6039834 Apparatus and methods for upgraded substrate processing system with microwave plasma source
03/21/2000US6039833 Method and apparatus for component pickup
03/21/2000US6039830 Method of and apparatus for laminating a semiconductor wafer with protective tape
03/21/2000US6039815 Cleaning method and apparatus for the same
03/21/2000US6039814 Degassing gas dissolved in a surface-active agent-containing cleaning liquid to a value not more than 5ppm, applying ultrasonic waves with a frequency of 1 mhz., cleaing the silicon or liquid crystal surface with cleaning liquid
03/21/2000US6039811 Apparatus for fabricating polysilicon film for semiconductor device
03/21/2000US6039808 CVD apparatus for Cu formation
03/21/2000US6039807 Apparatus for moving exhaust tube of barrel reactor
03/21/2000US6039803 Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon
03/21/2000US6039770 Semiconductor device manufacturing system having means for reducing a pressure difference between loadlock and processing chambers
03/21/2000US6039638 Work planarizing method and apparatus
03/21/2000US6039577 Method of forming diodes
03/21/2000US6039511 Carrying apparatus for spherical objects
03/21/2000US6039234 Missing wire detector
03/21/2000US6039187 Off center three point carrier for wet processing semiconductor substrates
03/21/2000US6039186 Composite transport carrier
03/21/2000US6039059 Wafer cleaning system
03/21/2000US6039057 Automated washing system and method
03/21/2000US6039055 Wafer cleaning with dissolved gas concentration control
03/21/2000US6039000 Focused particle beam systems and methods using a tilt column
03/21/2000US6038788 Chuck assembly with a contamination prevention device for a semiconductor wafer transfer apparatus
03/16/2000WO2000014810A1 Silicon carbide junction field effect transistor
03/16/2000WO2000014808A1 Ferroelectric transistor, its use in a storage cell system and its method of production
03/16/2000WO2000014807A1 High-voltage semiconductor component
03/16/2000WO2000014806A1 Vertical bipolar transistor and method for the production thereof
03/16/2000WO2000014805A1 Semiconductor device having ohmic contact and a method for providing ohmic contact with such a device
03/16/2000WO2000014804A1 Dielectric element and production method thereof and semiconductor device
03/16/2000WO2000014803A1 Low trigger and holding voltage scr device for esd protection
03/16/2000WO2000014802A1 Semiconductor device, method of manufacture thereof, circuit board, and electronic device
03/16/2000WO2000014801A1 High voltage shield
03/16/2000WO2000014799A1 Semiconductor component in a chip format and method for the production thereof
03/16/2000WO2000014797A2 Isolation region forming methods
03/16/2000WO2000014796A1 Method of forming a silicon contact interface
03/16/2000WO2000014795A1 Complementary bipolar/cmos epitaxial structure and process
03/16/2000WO2000014793A2 In-situ integrated oxide etch process particularly useful for copper dual damascene
03/16/2000WO2000014792A1 Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
03/16/2000WO2000014791A1 Method of fabricating a high power rf field effect transistor with reduced hot electron injection and resulting structure
03/16/2000WO2000014790A1 Inspection system and method for producing electronic device by using the same
03/16/2000WO2000014789A1 Method for applying a circuit chip onto a support
03/16/2000WO2000014787A1 Process for making high performance mosfet with an inverted t-shaped gate electrode
03/16/2000WO2000014786A1 Method of manufacturing semiconductor device
03/16/2000WO2000014785A1 A method for cleaning organic dielectric film containing semiconductor wafers
03/16/2000WO2000014784A1 Double-pulse laser crystallisation of thin semiconductor films
03/16/2000WO2000014781A1 Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
03/16/2000WO2000014780A1 Semiconductor processing method, semiconductor circuitry, and gate stacks
03/16/2000WO2000014778A1 Diffusion barrier layers and methods of forming same
03/16/2000WO2000014776A2 Non-oxygen precipitating czochralski silicon wafers
03/16/2000WO2000014775A2 Multi-lamp cone reflector for semiconductor wafer heating
03/16/2000WO2000014774A1 Method and device for automatically counting chips on semiconductor wafers
03/16/2000WO2000014773A1 Method for handling a plurality of circuit chips
03/16/2000WO2000014772A1 Device and method for handling individual wafers
03/16/2000WO2000014767A1 Quadrupole device for projection lithography by means of charged particles
03/16/2000WO2000014766A1 Projection lithography device utilizing charged particles
03/16/2000WO2000014765A1 Scanning electron beam microscope
03/16/2000WO2000014750A1 Apparatus for generating focused electromagnetic radiation
03/16/2000WO2000014748A1 Magnetoresistive element and use of same as storage element in a storage system
03/16/2000WO2000014679A1 Method for contacting a circuit chip
03/16/2000WO2000014616A1 Component heater for use in semiconductor manufacturing equipment
03/16/2000WO2000014600A1 Active matrix liquid crystal device and method for producing the same
03/16/2000WO2000014310A1 Device for producing and processing semiconductor substrates
03/16/2000WO2000014306A1 Method for plating substrate and apparatus
03/16/2000WO2000013875A1 Method for producing a hybrid frame or hybrid housing and corresponding hybrid frame or hybrid housing
03/16/2000WO2000013852A1 Apparatuses and methods for polishing semiconductor wafers
03/16/2000WO2000013851A1 A carrier head for chemical mechanical polishing a substrate
03/16/2000WO2000003301A3 Exposure device having a planar motor
03/16/2000WO2000002249A3 Integrated circuit with p-n junctions with reduced defects
03/16/2000WO1999065063A3 Dram storage capacitor
03/16/2000WO1999056509A9 Flip chip devices with flexible conductive adhesive
03/16/2000WO1999040611A3 Wafer cleaning method and system
03/16/2000DE19943175A1 Etching process, especially for forming a tungsten wiring structure or barrier metal for a thin film resistor, comprises oxidizing and then removing a tungsten thin film region with an alkaline solution
03/16/2000DE19940390A1 Pressure sensitive adhesive sheet to fix semiconductor wafers temporarily to support plates comprises a radiation curable adhesive layer
03/16/2000DE19938072A1 Self-aligned structure, especially for semiconductor, micro-optical or micromechanical devices, is produced using an existing substrate structure as mask for back face resist layer exposure
03/16/2000DE19931916A1 Single chip semiconductor component with different gate oxide thicknesses, useful for multimedia systems, has vertical channel regions, impurity regions overlapping at a trench bottom and transistor gates buried in trenches
03/16/2000DE19845296A1 Verfahren zur Kontaktierung eines Schaltungschips Method for contacting a circuit chip
03/16/2000DE19842014C1 Herstellungsverfahren für einen Kondensator Manufacturing method of a capacitor
03/16/2000DE19841996A1 Halbleiterbauelement im Chip-Format und Verfahren zu seiner Herstellung A semiconductor device in chip format and process for its preparation
03/16/2000DE19841911A1 Heat sink device for semiconductor elements or electric motor has extruded lightweight metal base profile provided with projecting spaced cooling ribs
03/16/2000DE19841583A1 Heat sink device for semiconductor elements or electric motor has extruded lightweight metal base profile provided with projecting spaced cooling ribs
03/16/2000DE19841445A1 Three-level word line decoder circuit for EEPROM
03/16/2000DE19840238C1 Doped silicon layer, e.g. a metal oxide semiconductor transistor gate electrode or a bipolar transistor connection is produced using a chemical vapor deposition gas containing disilane in addition to monosilane and dopant gas
03/16/2000DE19840226A1 Verfahren zum Aufbringen eines Schaltungschips auf einen Träger Method for applying a circuit chips on a carrier
03/16/2000DE19840031A1 Semiconductor component, e.g. containing double-diffused metal-oxide semiconductor transistors, has a region for creating a double drift field from an underlying substrate and from an overlying semiconductor layer towards the region
03/16/2000DE19839969A1 Siliziumcarbid-Junction-Feldeffekttransistor Silicon carbide junction field effect transistor
03/16/2000DE19838482C1 Method and device for heating up carrier element fitted with electronic components to preset temperatures within casing has casing with in- and out-openings for chip carrier guided on preset path
03/16/2000DE19834649C1 Verfahren zum Herstellen einer Speicherzelle A method for fabricating a memory cell
03/16/2000CA2342904A1 High voltage shield
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