| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 02/15/2000 | US6025618 Two-parts ferroelectric RAM |
| 02/15/2000 | US6025617 Microelectronic devices having increased impurity concentration between a metal silicide contact surface |
| 02/15/2000 | US6025615 Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same |
| 02/15/2000 | US6025614 Amplifier semiconductor element, method for fabricating the same, and amplifier semiconductor device |
| 02/15/2000 | US6025613 Semiconductor device capable of reducing leak current and having excellent pinch-off characteristic and method of manufacturing the same |
| 02/15/2000 | US6025612 NAND or NOR compound semiconductor memory |
| 02/15/2000 | US6025609 Laser synthesized ceramic electronic devices and circuits and method for making |
| 02/15/2000 | US6025607 Thin-film transistor and liquid crystal display device |
| 02/15/2000 | US6025605 Aligned semiconductor structure |
| 02/15/2000 | US6025604 Fine projection structure and fabricating method thereof |
| 02/15/2000 | US6025602 Ion implantation system for implanting workpieces |
| 02/15/2000 | US6025596 Method for measuring epitaxial film thickness of multilayer epitaxial wafer |
| 02/15/2000 | US6025575 Heating apparatus for chemical vapor deposition equipment |
| 02/15/2000 | US6025281 Applying molecular, atomic, or isotopic species during oxide deposition in ultrahigh vacuum to reduce interface state density |
| 02/15/2000 | US6025280 Use of SiD4 for deposition of ultra thin and controllable oxides |
| 02/15/2000 | US6025279 Method of reducing nitride and oxide peeling after planarization using an anneal |
| 02/15/2000 | US6025278 Methods for manufacturing semiconductive wafers and semiconductive material stencil masks |
| 02/15/2000 | US6025277 Method and structure for preventing bonding pad peel back |
| 02/15/2000 | US6025276 Semiconductor processing methods of forming substrate features, including contact openings |
| 02/15/2000 | US6025275 Forming bonds directly on thick plated interconnect, eliminating high parasitic series resistance associated with bond pads |
| 02/15/2000 | US6025274 Providing substrate with gate, forming spacer having middle indented waistline on side wall of gate, forming metal layer having gap at indentation, transforming metal into silicide |
| 02/15/2000 | US6025273 Carbon atoms released from carbon doped polysilicon hard mask during contact hole etching reduce free oxygen and contamination buildup and increase etch rate of dielectric layer |
| 02/15/2000 | US6025272 Method of planarize and improve the effectiveness of the stop layer |
| 02/15/2000 | US6025271 Method of removing surface defects or other recesses during the formation of a semiconductor device |
| 02/15/2000 | US6025270 Planarization process using tailored etchback and CMP |
| 02/15/2000 | US6025269 Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer |
| 02/15/2000 | US6025268 Method of etching conductive lines through an etch resistant photoresist mask |
| 02/15/2000 | US6025267 Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices |
| 02/15/2000 | US6025266 Controlling formation of film on backside of wafer, using moveable cover shield |
| 02/15/2000 | US6025265 Method of forming a landing pad structure in an integrated circuit |
| 02/15/2000 | US6025264 Forming organic low-k dielectric layer over conductive layer on semiconductor substrate, forming opening, forming doped silicon barrier layer over sides, depositing second barrier layer and conductive layer, polishing to expose dielectric |
| 02/15/2000 | US6025263 Defining metal line pattern on semiconductor surface, depositing dielectric underlayer of silicon dioxide with constant refraction index, forming interlayer dielectric using ozone and tetraethyl orthosilicate |
| 02/15/2000 | US6025262 Patterning to produce conductive runners, applying passivation layer of silicon dioxide, planarizing by chemical mechanical polishing, applying overcoating layer of silicon nitride, etching to bonding pads associated with runners |
| 02/15/2000 | US6025261 Method for making high-Q inductive elements |
| 02/15/2000 | US6025260 Method for fabricating air gap with borderless contact |
| 02/15/2000 | US6025259 Dual damascene process using high selectivity boundary layers |
| 02/15/2000 | US6025258 Method for fabricating solder bumps by forming solder balls with a solder ball forming member |
| 02/15/2000 | US6025257 Forming metal film and dielectric film which contains perovskite type oxide on substrate, annealing so metal oxidizes and diffuses into crystal structure of dielectric |
| 02/15/2000 | US6025256 Laser based method and system for integrated circuit repair or reconfiguration |
| 02/15/2000 | US6025255 Initially etching contact opening at high selectivity, then, as contact channel narrows, reducing polymer formation rate to prevent polymer pinch off and assure insulator clearance |
| 02/15/2000 | US6025254 Low resistance gate electrode layer and method of making same |
| 02/15/2000 | US6025253 Differential poly-edge oxidation for stable SRAM cells |
| 02/15/2000 | US6025251 Method for producing a plurality of semiconductor components |
| 02/15/2000 | US6025250 Methods including wafer grooves for reducing semiconductor wafer warping and related structure |
| 02/15/2000 | US6025249 Method for manufacturing shallow trench isolation structure |
| 02/15/2000 | US6025248 Methods of forming capacitor electrodes including a capacitor electrode etch |
| 02/15/2000 | US6025247 Method for manufacturing capacitor structure of dynamic memory cell |
| 02/15/2000 | US6025246 Methods for fabricating microelectronic capacitor structures |
| 02/15/2000 | US6025245 Method of forming a trench capacitor with a sacrificial silicon nitrate sidewall |
| 02/15/2000 | US6025244 Self-aligned patterns by chemical-mechanical polishing particularly suited to the formation of MCM capacitors |
| 02/15/2000 | US6025243 Feeding gas of hexamethylmolybdenum and hydrogen gas onto substrate to deposit molybdenum in opening forming barrier metal, forming aluminum film thereon for electrical wiring |
| 02/15/2000 | US6025242 Fabrication of semiconductor device having shallow junctions including an insulating spacer by thermal oxidation creating taper-shaped isolation |
| 02/15/2000 | US6025241 Method of fabricating semiconductor devices with self-aligned silicide |
| 02/15/2000 | US6025240 Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices |
| 02/15/2000 | US6025238 Using nitrogen-rich punchthrough region to inhibit diffusion of dopants used in forming channel region |
| 02/15/2000 | US6025237 Methods of forming field effect transistors having graded drain region doping profiles therein |
| 02/15/2000 | US6025236 Methods of forming field oxide and active area regions on a semiconductive substrate |
| 02/15/2000 | US6025235 Short channel transistor having resistive gate extensions |
| 02/15/2000 | US6025234 Method for manufacturing thick gate oxide device |
| 02/15/2000 | US6025233 Method of manufacturing a semiconductor device |
| 02/15/2000 | US6025232 Methods of forming field effect transistors and related field effect transistor constructions |
| 02/15/2000 | US6025230 High speed MOSFET power device with enhanced ruggedness fabricated by simplified processes |
| 02/15/2000 | US6025229 Method of fabricating split-gate source side injection flash memory array |
| 02/15/2000 | US6025228 Providing a first polysilicon layer, providing high dielectric constant layer, forming oxynitride layer |
| 02/15/2000 | US6025227 Capacitor over bit line structure using a straight bit line shape |
| 02/15/2000 | US6025226 Method of forming a capacitor and a capacitor formed using the method |
| 02/15/2000 | US6025225 Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same |
| 02/15/2000 | US6025224 Device with asymmetrical channel dopant profile |
| 02/15/2000 | US6025223 Methods of forming high dielectric capacitors |
| 02/15/2000 | US6025222 Vapor phase growth of a dielectric film and a fabrication process of a semiconductor device having such a dielectric film |
| 02/15/2000 | US6025221 Processing methods of forming integrated circuitry memory devices, methods of forming DRAM arrays, and related semiconductor masks |
| 02/15/2000 | US6025220 Method of forming a polysilicon diode and devices incorporating such diode |
| 02/15/2000 | US6025219 Method of manufacturing a semiconductor device having MOS transistor and bipolar transistor in mixture on the same substrate |
| 02/15/2000 | US6025218 Method of manufacturing a thin-film electronic device with a laminated conductor |
| 02/15/2000 | US6025217 Forming uniform polycrystalline semiconductor thin film by laser annealing amorphous film |
| 02/15/2000 | US6025216 TET-LCD method for manufacturing the same |
| 02/15/2000 | US6025215 Method of making field effect transistors |
| 02/15/2000 | US6025211 Setting surface other than element forming region to be non-hydrogen-terminated insulating region, isolating elements formed thereon |
| 02/15/2000 | US6025206 Method for detecting defects |
| 02/15/2000 | US6025205 Apparatus and methods of forming preferred orientation-controlled platinum films using nitrogen |
| 02/15/2000 | US6025116 Etching of contact holes |
| 02/15/2000 | US6025115 Selectively irradiating surface of substrate with light in gas atmosphere to form surface-modified layer, annealing to stabilize and make more etch resistant, dry etching non-modified portion |
| 02/15/2000 | US6025113 Photosensitve polymide precursor and its use for pattern formation |
| 02/15/2000 | US6025099 Exposure of photoresists on substrates to form images |
| 02/15/2000 | US6024888 Etching at room temperature silicon oxide layers formed on a wafer in a gaseous etching atmosphere consisting essentially of a mixture of hydrogen fluoride and water vapor |
| 02/15/2000 | US6024887 Useful for stripping from semiconductor substrates ion implanted patterned photoresist layers |
| 02/15/2000 | US6024885 Process for patterning magnetic films |
| 02/15/2000 | US6024856 Copper metallization of silicon wafers using insoluble anodes |
| 02/15/2000 | US6024844 Enhanced reactive DC sputtering system |
| 02/15/2000 | US6024829 Eliminating agglomerate particles in a polishing slurry used for polishing a semiconductor wafer |
| 02/15/2000 | US6024828 Spin-on-glass etchback uniformity improvement using hot backside helium |
| 02/15/2000 | US6024826 Plasma reactor with heated source of a polymer-hardening precursor material |
| 02/15/2000 | US6024802 Vapor treatment process for reducing oxide depletion |
| 02/15/2000 | US6024801 Exposing device surface in an enclosure to supercritical fluid cleaning medium, purging of libeated substances, depositing lubrication passivant, removing device |
| 02/15/2000 | US6024800 Plasma processing apparatus |
| 02/15/2000 | US6024794 Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination |
| 02/15/2000 | US6024631 Method and apparatus to hold integrated circuit chips onto a chuck and to simultaneously remove multiple integrated circuit chips from a cutting chuck |
| 02/15/2000 | US6024630 Fluid-pressure regulated wafer polishing head |
| 02/15/2000 | US6024629 Probe apparatus and a method for polishing a probe |
| 02/15/2000 | US6024620 Field emission displays with reduced light leakage |