Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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03/28/2000 | US6043000 Method for manufacturing a semiconductor device |
03/28/2000 | US6042999 Protecting substrate substructure from etching damage in a damascene process by filling a hole opening with protective coating prior to forming conductive line opening of damascene structure having an etch-stop layer separating dielectrics |
03/28/2000 | US6042997 Copolymers and photoresist compositions comprising copolymer resin binder component |
03/28/2000 | US6042996 Photoresist layer is formed on the dielectric layer; exposure using a mask that has a region light completely passes over, a transmissive region and a opaque region; method uses one photolithography step, decreases cost |
03/28/2000 | US6042995 Multilayer film has thickness such that a portion of the ultraviolet radiation is transmitted through the inspection film, reflected from the multilayer film and back into the inspection film; the inspection film is developed, analyzed |
03/28/2000 | US6042994 Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content |
03/28/2000 | US6042993 Photolithographic structure generation process |
03/28/2000 | US6042992 Use of a suitably selected monomeric and/or polymeric dye which brings the real part of the refractive index into a range which is optimal for the suppression of reflection-related effects |
03/28/2000 | US6042975 Multiple exposures at different thickness levels are made using photomasks aligned with a latent image of alignment marks formed during the first exposure; latent image is visible to the alignment system of commercial steppers |
03/28/2000 | US6042972 Opaque material on substrate surface, reflective material configured to provide first alignment detection indication on portion of surface, second alignment detection indication is distributed among spaced regions on a second surface |
03/28/2000 | US6042971 Extracting patterns for forming mask from design data stored; calculating an aperture area of an aperture section requested in an eb mask using the data; generating cell data for aperture creation using the value and forming the pattern |
03/28/2000 | US6042953 Substrate on which bumps are formed and method of forming the same |
03/28/2000 | US6042922 Adhesive sheet for wafer setting and process for producing electronic component |
03/28/2000 | US6042901 Suppling reactant gases of silicon tetrafluoride and silicon hydride in a temperature-controlled gas flow ratio, e,g, temperature of the growing film controlled as a function of the reactant gases ratio; stable moisture-resistant films |
03/28/2000 | US6042887 Chemical vapor deposition using tetraethoxysilane (teos) to form sub-atmospheric undoped silicon glass (sausg) dielectric over semiconductor structure, then etching aperture through dielectric with greater uniformity |
03/28/2000 | US6042741 Water, abrasive particles, surfactant and compound which complexes with silica and silicon nitride containing functional groups having dissociable protons |
03/28/2000 | US6042738 Pattern film repair using a focused particle beam system |
03/28/2000 | US6042712 Apparatus for controlling plating over a face of a substrate |
03/28/2000 | US6042706 Ionized PVD source to produce uniform low-particle deposition |
03/28/2000 | US6042700 In first interval, sputtering material primarily from first disk-shaped target onto workpiece, in second interval sputtering from second ring-shaped target which is coil coupling radio frequency energy |
03/28/2000 | US6042686 Power segmented electrode |
03/28/2000 | US6042682 Method of thermocompression bonding a supporting substrate to a semiconductor bare chip |
03/28/2000 | US6042654 Thermally decomposing chlorine gas to form free radicals; reacting free radicals with said deposits formed inside process chamber on internal components made of quartz, silicon carbide coated graphite, stainless steel; removing by products |
03/28/2000 | US6042653 Susceptor for bearing an object to be processed thereon |
03/28/2000 | US6042652 Atomic layer deposition apparatus for depositing atomic layer on multiple substrates |
03/28/2000 | US6042651 Molecular contamination control system |
03/28/2000 | US6042650 Processing apparatus for fabricating LSI with protected beam damper |
03/28/2000 | US6042649 Polyimide coating device having a polyimide supply status sensing device |
03/28/2000 | US6042647 Nozzle system for feeding treatment liquid such as a liquid developer on a workpiece |
03/28/2000 | US6042623 Positioning multi-wafer carrier, transferring wafers into loadlock with robot device, sealing loadlock, removing wafers from loadlock, sealing and venting outbound loadlock, opening and transferring wafers to carrier |
03/28/2000 | US6042613 LSI design aiding apparatus |
03/28/2000 | US6042455 Polishing apparatus |
03/28/2000 | US6042454 System for detecting the endpoint of the polishing of a semiconductor wafer by a semiconductor wafer polisher |
03/28/2000 | US6042391 High density electrical connectors |
03/28/2000 | US6042372 Heat treatment apparatus |
03/28/2000 | US6042324 Multi-stage single-drive FOUP door system |
03/28/2000 | US6042257 Correction method and correction apparatus of mask pattern |
03/28/2000 | US6041995 Wire bonding method |
03/28/2000 | US6041994 Rapid and selective heating method in integrated circuit package assembly by means of tungsten halogen light source |
03/28/2000 | US6041938 Compliant process cassette |
03/28/2000 | US6041937 Wafer cassette retainer in a wafer container |
03/28/2000 | US6041799 Microwave-excitation cleaning and rinsing apparatus |
03/28/2000 | US6041796 Apparatus for drying objects with fluids |
03/28/2000 | US6041735 Inductively coupled plasma powder vaporization for fabricating integrated circuits |
03/28/2000 | US6041734 Use of an asymmetric waveform to control ion bombardment during substrate processing |
03/28/2000 | US6041733 Plasma processing apparatus protected from discharges in association with secondary potentials |
03/28/2000 | US6041496 Method of making ceramic substrate |
03/28/2000 | US6041495 Filling holes in a photoresist-coated polyimide film with metal, removing photoresist leaving metal bumps projecting from film; electroplating bumps forms connections on circuit board surface opposite from where semiconductor chip attaches |
03/28/2000 | US6041465 Cleaning apparatus |
03/28/2000 | CA2117426C Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
03/28/2000 | CA2109198C Primary flow cvd apparatus and method |
03/28/2000 | CA2021993C Impurity doping method with diffusion source |
03/25/2000 | CA2283532A1 An epitaxial wafer, a manufacturing method of the epitaxial wafer, and a surface cleaning method for a compound semiconductor substrate used in the epitaxial wafer |
03/23/2000 | WO2000016411A1 Semiconductor light-emitting device and method for manufacturing the same |
03/23/2000 | WO2000016407A2 Switching transistor with reduced switching losses |
03/23/2000 | WO2000016404A1 Lateral bipolar transistor and method of making same. |
03/23/2000 | WO2000016399A1 Semiconductor circuit |
03/23/2000 | WO2000016396A1 Simox substrate and method for production thereof |
03/23/2000 | WO2000016395A1 Flip chip mounting technique |
03/23/2000 | WO2000016393A1 Method of forming interconnects using selective deposition |
03/23/2000 | WO2000016392A1 Method of manufacturing a semiconductor device with a bipolar transistor |
03/23/2000 | WO2000016391A1 Method for producing semiconductor device |
03/23/2000 | WO2000016390A1 Method for producing a step on the surface of a substrate consisting of semiconductor material, use of said method and substrate with a step |
03/23/2000 | WO2000016389A1 Device and method for etching spacers formed upon an integrated circuit gate conductor |
03/23/2000 | WO2000016388A1 High rate silicon dioxide deposition at low pressures |
03/23/2000 | WO2000016387A1 High rate silicon nitride deposition method at low pressures |
03/23/2000 | WO2000016386A1 Method for heat-treating silicon wafer and silicon wafer |
03/23/2000 | WO2000016385A1 Plasma reactor |
03/23/2000 | WO2000016384A1 Apparatus for manufacturing semiconductor device and its manufacturing method |
03/23/2000 | WO2000016383A1 Method for forming compound semiconductor layer and compound semiconductor device |
03/23/2000 | WO2000016382A1 Low temperature formation of backside ohmic contacts for vertical devices |
03/23/2000 | WO2000016380A1 Method and apparatus for cooling substrates |
03/23/2000 | WO2000016378A2 Method of fabricating group-iii nitride-based semiconductor device |
03/23/2000 | WO2000016377A2 Method for forming a three-component nitride film containing metal and silicon |
03/23/2000 | WO2000016370A1 Electron beam aperture element with beam shielding |
03/23/2000 | WO2000016163A2 Method and apparatus for developing photoresist patterns |
03/23/2000 | WO2000016162A1 Method of using a modulated exposure mask |
03/23/2000 | WO2000016161A1 Environment exchange control for material on a wafer surface |
03/23/2000 | WO2000016076A1 Electronic component lead inspection device |
03/23/2000 | WO2000015885A1 Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
03/23/2000 | WO2000015881A2 Gas feeding system for chemical vapor deposition reactor and method of controlling the same |
03/23/2000 | WO2000015870A1 Wafer processing reactor system with programmable processing parameters and method |
03/23/2000 | WO2000015868A1 High rate silicon deposition method at low pressures |
03/23/2000 | WO2000015866A1 Chemical deposition method using catalyst on surface |
03/23/2000 | WO2000015865A1 Method for growing oxide thin films containing barium and strontium |
03/23/2000 | WO2000015858A1 Wire-bonding alloy composites |
03/23/2000 | WO2000015544A1 Aperture in a semiconductor material, and the production and use thereof |
03/23/2000 | WO2000015429A1 Composite wire with noble metal cladding |
03/23/2000 | WO2000015387A1 Oscillating orbital polisher and method |
03/23/2000 | WO2000015352A1 Electroless metal deposition of electronic components in an enclosable vessel |
03/23/2000 | WO2000003357A8 Identifying and handling device tilt in a three-dimensional machine-vision image |
03/23/2000 | WO2000003198A8 Machine vision and semiconductor handling |
03/23/2000 | WO2000003064A9 Gas distributor plate for a processing apparatus |
03/23/2000 | WO1999065803A9 Automated opening and closing of ultra clean storage containers |
03/23/2000 | WO1999064940A9 Distributed control system for a semiconductor wafer processing machine |
03/23/2000 | WO1999064647A9 Method and apparatus for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipolar electrode assembly |
03/23/2000 | WO1999063542A8 Radiation hardened six transistor random access memory and memory device |
03/23/2000 | DE19944980A1 Encased electrical connection for a connecting structure used for testing, e.g., semiconductor wafer has a holding structure arranged between an elastomeric element and PCB substrate |
03/23/2000 | DE19944729A1 A resist composition containing a binder and a radiation-sensitive component for use in a fine working of semiconductors |
03/23/2000 | DE19926599A1 Aqueous alkaline solution, especially for anisotropic etching of semiconductor materials e.g. silicon, contains a group five element or compound addition to achieve low surface roughness |