Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2000
03/21/2000US6040909 Surface position detecting system and device manufacturing method using the same
03/21/2000US6040894 Projection exposure apparatus and device manufacturing method
03/21/2000US6040893 Scanning exposure method and apparatus for controlling acceleration and deceleration of a masking device
03/21/2000US6040892 Multiple image reticle for forming layers
03/21/2000US6040810 Display device having display and imaging pixels sandwiched between same substrates
03/21/2000US6040735 Reference voltage generators including first and second transistors of same conductivity type
03/21/2000US6040712 Apparatus and method for protecting a circuit during a hot socket condition
03/21/2000US6040704 Probe unit and inspection head
03/21/2000US6040675 Supporting apparatus using magnetic power
03/21/2000US6040633 Oxide wire bond insulation in semiconductor assemblies
03/21/2000US6040631 Method of improved cavity BGA circuit package
03/21/2000US6040630 Integrated circuit package for flip chip with alignment preform feature and method of forming same
03/21/2000US6040629 Semiconductor integrated circuit having silicided elements of short length
03/21/2000US6040627 Semiconductor device and method of manufacturing semiconductor device
03/21/2000US6040626 Semiconductor package
03/21/2000US6040622 Semiconductor package using terminals formed on a conductive layer of a circuit board
03/21/2000US6040619 Semiconductor device including antireflective etch stop layer
03/21/2000US6040618 Multi-chip module employing a carrier substrate with micromachined alignment structures and method of forming
03/21/2000US6040617 Structure to provide junction breakdown stability for deep trench devices
03/21/2000US6040616 Device and method of forming a metal to metal capacitor within an integrated circuit
03/21/2000US6040615 Semiconductor device with moisture resistant fuse portion
03/21/2000US6040614 Semiconductor integrated circuit including a capacitor and a fuse element
03/21/2000US6040613 Antireflective coating and wiring line stack
03/21/2000US6040610 Semiconductor device
03/21/2000US6040609 Process for integrating, in a single semiconductor chip, MOS technology devices with different threshold voltages
03/21/2000US6040607 Self aligned method for differential oxidation rate at shallow trench isolation edge
03/21/2000US6040606 Integrated circuit structure with dual thickness cobalt silicide layers and method for its manufacture
03/21/2000US6040605 Semiconductor memory device
03/21/2000US6040604 Semiconductor component comprising an electrostatic-discharge protection device
03/21/2000US6040602 Formation of lightly doped regions under a gate
03/21/2000US6040601 High voltage device
03/21/2000US6040600 Trenched high breakdown voltage semiconductor device
03/21/2000US6040599 Insulated trench semiconductor device with particular layer structure
03/21/2000US6040598 High-breakdown-voltage semiconductor apparatus
03/21/2000US6040597 Isolation boundaries in flash memory cores
03/21/2000US6040596 Dynamic random access memory devices having improved peripheral circuit resistors therein
03/21/2000US6040595 Structure of a non-destructive readout dynamic random access memory
03/21/2000US6040594 High permittivity ST thin film and a capacitor for a semiconductor integrated circuit having such a thin film
03/21/2000US6040589 Semiconductor device having larger contact hole area than an area covered by contact electrode in the hole
03/21/2000US6040585 Method for detecting wafer orientation during transport
03/21/2000US6040583 Electron beam exposure method using a moving stage
03/21/2000US6040582 Ion beam focuser for an ion implanter analyzer
03/21/2000US6040518 Wafer temperature monitoring device utilizing flexible thermocouple
03/21/2000US6040418 Fluorinated polyimides, laminated substrates and polyamic acid solutions
03/21/2000US6040249 Method of improving diffusion barrier properties of gate oxides by applying ions or free radicals of nitrogen in low energy
03/21/2000US6040248 Anisotropically etching contact/via openings in the layer with an etchant containing o2 and cl2. cl2 permits the achievement of essentially vertical sidewalls on the openings etched in the organic polymeric dielectric
03/21/2000US6040247 Controlling a flow rate of carrier gas at an etcher having a mixture of gases, the mixture including cf4, a polymer forming gas and a carrier gas
03/21/2000US6040245 IC mechanical planarization process incorporating two slurry compositions for faster material removal times
03/21/2000US6040243 Into dielectric layers in the fabrication of dual damascene interconnects in the manufacture of an integrated circuit device.
03/21/2000US6040242 Method of manufacturing a contact plug
03/21/2000US6040241 Method of avoiding sidewall residue in forming connections
03/21/2000US6040240 Substrate having the copper interconnect is exposed to atmosphere after the substrate is cooled to a temperature below 160.degree. c. under a non-oxidizable atmosphere.
03/21/2000US6040239 Non-oxidizing touch contact interconnect for semiconductor test systems and method of fabrication
03/21/2000US6040238 Thermal annealing for preventing polycide void
03/21/2000US6040237 Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge
03/21/2000US6040236 Method for manufacturing silicon thin film conductive element
03/21/2000US6040235 Methods and apparatus for producing integrated circuit devices
03/21/2000US6040234 Method of manufacturing semiconductor device without bird beak effect
03/21/2000US6040233 Method of making a shallow trench isolation with thin nitride as gate dielectric
03/21/2000US6040232 Method of manufacturing shallow trench isolation
03/21/2000US6040231 Method of fabricating a shallow trench isolation structure which includes using a salicide process to form an aslope periphery at the top corner of the substrate
03/21/2000US6040230 Method of forming a nano-rugged silicon-containing layer
03/21/2000US6040229 Method for manufacturing a solid electrolytic capacitor array
03/21/2000US6040228 Capacitance-forming method
03/21/2000US6040227 IPO deposited with low pressure O3 -TEOS for planarization in multi-poly memory technology
03/21/2000US6040226 Method for fabricating a thin film inductor
03/21/2000US6040225 Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices
03/21/2000US6040224 Method of manufacturing semiconductor devices
03/21/2000US6040223 Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits
03/21/2000US6040222 Method for fabricating an electrostatistic discharge protection device to protect an integrated circuit
03/21/2000US6040221 Semiconductor processing methods of forming a buried contact, a conductive line, an electrical connection to a buried contact area, and a field effect transistor gate
03/21/2000US6040220 Asymmetrical transistor formed from a gate conductor of unequal thickness
03/21/2000US6040219 Method of fabricating power semiconductor device using semi-insulating polycrystalline silicon (SIPOS) film
03/21/2000US6040218 Two square NVRAM cell
03/21/2000US6040217 Fabricating method of an ultra-fast pseudo-dynamic nonvolatile flash memory
03/21/2000US6040216 Method (and device) for producing tunnel silicon oxynitride layer
03/21/2000US6040215 Method of manufacturing semiconductor device including memory cell having transistor
03/21/2000US6040214 Method for making field effect transistors having sub-lithographic gates with vertical side walls
03/21/2000US6040213 Polysilicon mini spacer for trench buried strap formation
03/21/2000US6040212 Methods of forming trench-gate semiconductor devices using sidewall implantation techniques to control threshold voltage
03/21/2000US6040211 Semiconductors having defect denuded zones
03/21/2000US6040210 2F-square memory cell for gigabit memory applications
03/21/2000US6040209 Semiconductor memory device and method of forming transistors in a peripheral circuit of the semiconductor memory device
03/21/2000US6040208 Angled ion implantation for selective doping
03/21/2000US6040207 Oxide formation technique using thin film silicon deposition
03/21/2000US6040206 The conductive layer has a layered structure of an al-containing metal film and an n-containing mo film.
03/21/2000US6040205 Apparatus and method for controlling the depth of immersion of a semiconductor element in an exposed surface of a viscous fluid
03/21/2000US6040204 Method of stacking chips with a removable connecting layer
03/21/2000US6040203 Clock skew minimization and method for integrated circuits
03/21/2000US6040202 Color linear charge coupled device and method for driving the same
03/21/2000US6040201 Titanium nitride, titanium oxide
03/21/2000US6040200 Method of fabricating semiconductor device having stacked-layered substrate
03/21/2000US6040199 Semiconductor test structure for estimating defects at isolation edge and test method using the same
03/21/2000US6040120 Thermal processing apparatus
03/21/2000US6040119 Exposing through a mask a dried photoresist coated onto substrate to actinic radiation, then baking for a time at a low temperature prior to final development of photoresist to provide accurate image
03/21/2000US6040114 Exposing photosensitive film coated on substrate with a radiation beam to form a pattern of successive butting unit regions and resulting butting portions therebetween overlying isolation regions of integrated circuit, developing, etching
03/21/2000US6040112 Photoresist composition
03/21/2000US6040110 Process and apparatus for the removal of resist
03/21/2000US6040096 Measuring thermal expansion of mask substrate loosely supported to allow free thermal expansion, adjusting alignment of the mask substrate and the photosensitive substrate in response to the expansion amount
03/21/2000US6040095 Mask having measurement marks throughout the area of an e-beam projection mask on a grid of struts extending between sub-field membrane mask areas, the marks having been applied concurrently with patterning sub-field membrane mask areas