| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 04/04/2000 | US6045672 Sputtering apparatus |
| 04/04/2000 | US6045670 Back sputtering shield |
| 04/04/2000 | US6045667 Process and system for the treatment of substrates using ions from a low-voltage arc discharge |
| 04/04/2000 | US6045666 Hole is first filled with a barrier film comprising a layer of titanium nitride, conductive aluminum is coated into the hole with an ionized metal process in presence of high density plasma, then filled the hole using low density plasma |
| 04/04/2000 | US6045665 Efficiently prevents peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and suppresses particle production without contaminating the inside of the thin-film forming device |
| 04/04/2000 | US6045655 Method of mounting a connection component on a semiconductor chip with adhesives |
| 04/04/2000 | US6045634 High purity titanium sputtering target and method of making |
| 04/04/2000 | US6045626 Substrate structures for electronic devices |
| 04/04/2000 | US6045625 Buried oxide with a thermal expansion matching layer for SOI |
| 04/04/2000 | US6045624 Cleaning apparatus for preventing occurence of water marks is constructed to dry the wafers, which have been rinsed, in a drying chamber in a cooling system; prevents oxidation of surfaces of silicon wafers, for example |
| 04/04/2000 | US6045621 Method for cleaning objects using a fluid charge |
| 04/04/2000 | US6045620 Two-piece slit valve insert for vacuum processing system |
| 04/04/2000 | US6045618 Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
| 04/04/2000 | US6045614 Method for epitaxial growth of twin-free, (111)-oriented II-VI alloy films on silicon substrates |
| 04/04/2000 | US6045605 Abrasive material for polishing a semiconductor wafer, and methods for manufacturing and using the abrasive material |
| 04/04/2000 | US6045439 Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| 04/04/2000 | US6045436 Process for the material-abrading machining of the edge of a semiconductor wafer |
| 04/04/2000 | US6045435 Low selectivity chemical mechanical polishing (CMP) process for use on integrated circuit metal interconnects |
| 04/04/2000 | US6045433 Apparatus for optical inspection of wafers during polishing |
| 04/04/2000 | US6045369 Device for mounting semiconductor package and method of fabricating same |
| 04/04/2000 | US6045318 Lead frame supplying method and apparatus |
| 04/04/2000 | US6045315 Robot apparatus and treating apparatus |
| 04/04/2000 | US6045299 Unidirectional gate between interconnecting fluid transport regions |
| 04/04/2000 | US6045030 Sealing electronic packages containing bumped hybrids |
| 04/04/2000 | US6044874 Sealed container and sealed container ambient gas substitution apparatus and method |
| 04/04/2000 | US6044851 Removal residues |
| 04/04/2000 | US6044850 Forming photoresist ad wiring |
| 04/04/2000 | US6044576 Vacuum processing and operating method using a vacuum chamber |
| 04/04/2000 | US6044548 Methods of making connections to a microelectronic unit |
| 04/04/2000 | US6044534 Semiconductor device manufacturing machine and method for manufacturing a semiconductor device by using the same manufacturing machine |
| 04/04/2000 | CA2118619C Wafer release method and apparatus |
| 04/04/2000 | CA2115605C Differential virtual ground beam blanker |
| 04/04/2000 | CA2061160C Low aberration field emission electron gun |
| 03/30/2000 | WO2000017972A1 Process for producing nitride semiconductor device |
| 03/30/2000 | WO2000017939A1 Semiconductor device and its manufacturing method |
| 03/30/2000 | WO2000017938A1 Semiconductor device |
| 03/30/2000 | WO2000017937A2 Method for producing a semiconductor component |
| 03/30/2000 | WO2000017936A1 Ferroelectric thin films of reduced tetragonality |
| 03/30/2000 | WO2000017935A1 Semiconductor device |
| 03/30/2000 | WO2000017934A1 Bipolar transistor and method for producing same |
| 03/30/2000 | WO2000017933A1 Bipolar transistor and method for producing same |
| 03/30/2000 | WO2000017932A1 Bipolar transistor and method for producing same |
| 03/30/2000 | WO2000017930A1 High-speed imaging device |
| 03/30/2000 | WO2000017929A1 Ferroelectric device and semiconductor device |
| 03/30/2000 | WO2000017928A1 Integrated circuit and method for producing the same |
| 03/30/2000 | WO2000017925A1 Vacuum processing device |
| 03/30/2000 | WO2000017923A1 Bump forming method, soldering preprocessing method, soldering method, soldering preprocessing apparatus and soldering apparatus |
| 03/30/2000 | WO2000017922A1 METHOD FOR THE WET-CHEMICAL THINNING OF Si-LAYERS IN THE ACTIVE EMITTER REGION OF A BIPOLAR TRANSISTOR |
| 03/30/2000 | WO2000017919A2 Method for producing an ohmic contact |
| 03/30/2000 | WO2000017918A1 Metal-contact induced crystallization in semiconductor devices |
| 03/30/2000 | WO2000017917A1 Plasma film forming method |
| 03/30/2000 | WO2000017915A1 Method of manufacturing a semiconductor device comprising a semiconductor body having a surface provided with a coil having a magnetic core |
| 03/30/2000 | WO2000017914A2 Method for forming silicide regions on an integrated device |
| 03/30/2000 | WO2000017913A2 Method for forming a silicide region on a silicon body |
| 03/30/2000 | WO2000017907A1 Apparatus and method for endpoint detection in non-ionizing gaseous reactor environments |
| 03/30/2000 | WO2000017906A2 Rf plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
| 03/30/2000 | WO2000017905A1 Ion implantation device arranged to select neutral ions from the ion beam |
| 03/30/2000 | WO2000017902A1 Fuse circuit having zero power draw for partially blown condition |
| 03/30/2000 | WO2000017882A1 Method of making flexibly partitioned metal line segments for a simultaneous operation flash memory device with a flexible bank partition architecture |
| 03/30/2000 | WO2000017724A1 High-speed precision positioning apparatus |
| 03/30/2000 | WO2000017712A1 Photoresists, polymers and processes for microlithography |
| 03/30/2000 | WO2000017710A1 Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
| 03/30/2000 | WO2000017660A1 Electronic component |
| 03/30/2000 | WO2000017423A2 Method for producing an amorphous or polycrystalline layer on an insulating region |
| 03/30/2000 | WO2000017414A1 Tantalum films and methods for their deposition |
| 03/30/2000 | WO2000017284A1 Workpiece retainer and method for attaching/detaching workpiece by using the same |
| 03/30/2000 | WO2000017283A1 Oxidizing polishing slurries for low dielectric constant materials |
| 03/30/2000 | WO2000017282A1 Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing |
| 03/30/2000 | WO2000017281A1 Polishing liquid for polishing components, preferably wafers, especially for chemically-mechanically polishing components of this type |
| 03/30/2000 | WO2000017278A1 Method for the chemical vapor deposition of copper-based films and copper source precursors for the same |
| 03/30/2000 | WO2000017254A1 PREPARATION OF CROSS-LINKED 2-DIMENSIONAL POLYMERS WITH SIDEDNESS FROM α,β-LACTONES |
| 03/30/2000 | WO2000017108A1 High temperature ultra-pure water production apparatus and liquid medicine preparation apparatus equipped with the production apparatus |
| 03/30/2000 | WO2000017095A1 Control structure for producing hollow spaces and/or undercut zones in micromechanical and/or microelectronic components |
| 03/30/2000 | WO2000017094A1 Method for producing nanometer structures on semiconductor surfaces |
| 03/30/2000 | WO2000005745A8 Physical vapor processing of a surface with non-uniformity compensation |
| 03/30/2000 | WO2000004575A3 Collimated sputtering of semiconductor and other films |
| 03/30/2000 | WO2000001008A9 Ulsi mos with high dielectric constant gate insulator |
| 03/30/2000 | WO1999067440A3 Substrate support member with a purge gas channel and pumping system |
| 03/30/2000 | DE19943785A1 Electronic cascade circuit, e.g. with a silicon MOSFET and a silicon carbide JFET, has a first component grid control voltage partially applied to a second component grid connection at a level below its p-n junction diffusion voltage |
| 03/30/2000 | DE19943053A1 Plasma device for semiconductor component manufacture has capacitance compensator for maintaining constant overall chuck capacitance between chuck and earth terminal |
| 03/30/2000 | DE19939107A1 Silicon carbide component, especially a Schottky diode, is produced by forming an ohmic contact before high temperature growth of an epitaxial layer |
| 03/30/2000 | DE19938210A1 Suck back valve for use during semiconductor wafer processing controls pilot pressure fluid, flowing through ON/OFF valve based on comparison of detected amount variation and preset amount of variation |
| 03/30/2000 | DE19932880A1 Verfahren zur Herstellung von Nanometerstrukturen auf Halbleiteroberflächen A process for producing nanometer structures on semiconductor surfaces |
| 03/30/2000 | DE19906292C1 Test structure, especially for checking etch attack of gate polysilicon in a DRAM circuit during surface strap etching, has MOS transistors with external connections connected to the first and last of series-connected source-drain regions |
| 03/30/2000 | DE19844010A1 Bottom gate-type thin film transistor, useful for active matrix applications, has a doped semiconductor layer for forming an ohmic junction between a channel region and source-drain contacts |
| 03/30/2000 | DE19843984A1 IR sensor array production comprises etching a recess in a semiconductor substrate after depositing a membrane on the substrate surface |
| 03/30/2000 | DE19842883A1 Elektrisch programmierbare, nichtflüchtige Speicherzellenanordnung Electrically programmable, non-volatile memory cell arrangement |
| 03/30/2000 | DE19842882A1 Verfahren zum Herstellen eines Dotierungsgebiets A method of producing a doped region |
| 03/30/2000 | DE19842709A1 Polierflüssigkeit zum Polieren von Bauelementen, vorzugsweise Wafern, insbesondere zum Chemisch-Mechanischen Polieren derartiger Bauelemente Polishing liquid for polishing devices, preferably wafers, in particular for mechanical chemical polishing of such devices |
| 03/30/2000 | DE19841754A1 Schalttransistor mit reduzierten Schaltverlusten Switching transistor with reduced switching losses |
| 03/30/2000 | DE19832095C1 Stapelkondensator-Herstellungsverfahren Stacked capacitor manufacturing method |
| 03/30/2000 | CA2343129A1 Ferroelectric thin films of reduced tetragonality |
| 03/30/2000 | CA2342195A1 Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography |
| 03/30/2000 | CA2316977A1 Fuse circuit having zero power draw for partially blown condition |
| 03/29/2000 | EP0989615A2 Semiconductor device with capacitor and manufacturing method thereof |
| 03/29/2000 | EP0989614A2 TFT with an LDD structure and its manufacturing method |
| 03/29/2000 | EP0989613A1 SOI transistor with body contact and method of forming same |
| 03/29/2000 | EP0989612A1 Memory cell array and corresponding fabrication process |
| 03/29/2000 | EP0989611A2 Short-circuit resistant IGBT module |
| 03/29/2000 | EP0989610A2 Multilayered wiring structure and method of manufacturing the same |