Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2000
03/02/2000WO2000011711A1 Device comprising electronic components in mutually insulated regions of a semiconductor material layer and method for making same
03/02/2000WO2000011710A1 Method and device for applying ic sealant with bump
03/02/2000WO2000011709A1 Thin film transistors and their manufacture
03/02/2000WO2000011708A1 Semiconductor device having oxide-nitride gate insulating layer and method of manufacture thereof
03/02/2000WO2000011705A2 Continuous, non-metallic, media sensors for corrosive environments
03/02/2000WO2000011677A1 Electrically erasable nonvolatile memory
03/02/2000WO2000011566A1 Automatic generation of user definable memory bist circuitry
03/02/2000WO2000011520A1 Polymers having silicon-containing acetal or ketal functional groups
03/02/2000WO2000011519A1 Low thermal distortion extreme-uv lithography reticle
03/02/2000WO2000011237A1 Drive mechanism for vacuum device and vacuum device
03/02/2000WO2000011107A1 Ito etching composition
03/02/2000WO2000011091A1 Non-corrosive stripping and cleaning composition
03/02/2000WO2000010920A1 Aluminum oxide particles
03/02/2000WO2000010736A1 Printing of electronic circuits and components
03/02/2000WO1999067825A3 Methods of fabricating silicon carbide power devices by controlled annealing
03/02/2000WO1999062106A3 Method of producing a structured surface
03/02/2000WO1999060605A3 A method of forming a thin layer of semiconductor material
03/02/2000WO1999054919A3 Manufacture of field-effect semiconductor devices
03/02/2000WO1999044232A8 Method of increasing alignment tolerances for interconnect structures
03/02/2000WO1999006996B1 Method for nano-structuring amorphous carbon layers
03/02/2000DE19939244A1 Source-drain regions for sub-micron CMOS devices are formed using a reduced number of masking steps for forming a lightly p-doped drain region for a PMOS and a halo region for an NMOS
03/02/2000DE19936560A1 Berührungssignalführer Touch signal Guides
03/02/2000DE19936405A1 Electrostatic clamping device, used e.g. for clamping wafers for further processing, has a ceramic layer attached to a metal substrate by an elastic insulating layer containing rubber and phenolic antioxidant
03/02/2000DE19935495A1 Electronic device production, e.g. IC, semiconductor device or SAW device production, comprises thin film reactive ion etching to leave a residue which is removed by physical etching using an inert gas
03/02/2000DE19920757A1 Nonlinear circuit element or interconnection structure, e.g. a copper oxide rectifier, is formed on an integrated circuit by successive formation of a diffusion barrier layer, a copper layer and a copper oxide layer
03/02/2000DE19843979C1 Memory cell array, for a FeRAM or DRAM, has trench bottom and ridge crest planar transistors with source regions connected by bit lines angled to word lines
03/02/2000DE19840866A1 Verfahren zur Dotierung der externen Basisanschlußgebiete von Si-basierten Einfach-Polysilizium-npn-Bipolartransistoren Method for doping the external base terminal regions of Si-based single polysilicon npn bipolar transistors
03/02/2000DE19839760A1 Verfahren zur Verbindung von elektronischen Bauelementen mit einem Trägersubstrat sowie Verfahren zur Überprüfung einer derartigen Verbindung A method for connection of electronic components comprising a carrier substrate and to methods for checking of such a compound
03/02/2000DE19839718A1 Laser crystallization or crystal structure alteration of amorphous or polycrystalline semiconductor layers comprises paired laser pulse irradiation for extended melt time while maintaining a low substrate temperature
03/02/2000DE19837395A1 Verfahren zur Herstellung einer Halbleiter-Isolationsschicht und eines diese Halbleiter-Isolationsschicht enthaltenden Halbleiterbauelements A process for producing a semiconductor insulation layer and a semiconductor insulation layer containing this semiconductor device
03/02/2000DE19821237C1 Verfahren und Vorrichtung zur Trocknung von Photoresistschichten Method and apparatus for drying of photoresist layers
03/02/2000CA2341102A1 Electrically erasable nonvolatile memory
03/02/2000CA2338523A1 Polymers having silicon-containing acetal or ketal functional groups
03/01/2000EP0982779A2 Memory structure in ferroelectric nonvolatile memory and readout method therefor
03/01/2000EP0982778A1 A semiconductor device having nonvolatile memory cells each of which comprises a memory transistor and a selection transistor
03/01/2000EP0982777A1 Wordline driver circuit using ring-shaped devices
03/01/2000EP0982776A2 ESD protection thyristor with trigger diode
03/01/2000EP0982775A2 Semiconductor device with conductive lines thereon and barriers against parasitic current
03/01/2000EP0982773A2 System and method for bonding and sealing microfabricated wafers to form a single structure having a vacuum chamber therein
03/01/2000EP0982772A1 A semiconductor non-planar storage capacitor
03/01/2000EP0982771A1 Process for semiconductor device fabrication having copper interconnects
03/01/2000EP0982770A2 Physical isolation of regions of a semiconductor substrate
03/01/2000EP0982769A2 Microdevice and structural components of the same
03/01/2000EP0982768A1 Process for adjusting the carrier lifetime in a semiconductor device
03/01/2000EP0982767A1 Gettering method using a plasma ion introducing step and system for carrying out the same
03/01/2000EP0982766A1 Process for chemo-mechanical polishing of a copper-based material layer
03/01/2000EP0982765A2 Cleaning method of semiconductor substrate
03/01/2000EP0982764A2 Method of forming a gate oxide layer for transistors
03/01/2000EP0982763A1 MOVPE growth of III-V compound semiconductor layers
03/01/2000EP0982762A2 Wafer transfer apparatus
03/01/2000EP0982761A1 Process and apparatus for thermal treatment of semicondutor wafers
03/01/2000EP0982736A2 Magnetic memory
03/01/2000EP0982666A2 System on chip (soc) four-way crossbar system and method
03/01/2000EP0982630A2 Semiconductor-device manufacturing method having resist-film developing process according to wet treatment
03/01/2000EP0982576A1 Sensor and method of producing the same
03/01/2000EP0982385A1 Adhesive, method for bonding, and assemblies of mounted boards
03/01/2000EP0982320A1 Light-absorbing polymers and application thereof to antireflection film
03/01/2000EP0982098A2 Polishing apparatus
03/01/2000EP0981936A1 Plasma focus high energy photon source
03/01/2000EP0981833A2 Integrated cmos circuit configuration, and production of same
03/01/2000EP0981832A1 Reliability barrier integration for cu metallisation
03/01/2000EP0981830A1 Charged particle beam illumination of blanking aperture array
03/01/2000EP0981779A1 Composition and method for removing resist and etching residues using hydroxylammonium carboxylates
03/01/2000EP0981656A1 Low resistivity w using b 2?h 6?
03/01/2000EP0981655A2 Chemical vapour deposition precursors
03/01/2000EP0981435A1 Bonded joint
03/01/2000EP0981413A1 A method of producing a heat transfer device
03/01/2000EP0784713A4 Conformal titanium-based films and method for their preparation
03/01/2000EP0781455A4 Integrated circuit contacts with secured stringers
03/01/2000EP0728531B1 Method for forming a particle layer on a substrate, method for flattening an irregular substrate surface, and particle-layered substrate
03/01/2000EP0696345B1 Self aligning in-situ ellipsometer and method of using for process monitoring
03/01/2000CN1246202A Flip-chip type connection with elastic contacts
03/01/2000CN1245978A Method for making silicon solar cell p-n junction
03/01/2000CN1245976A 半导体器件 Semiconductor devices
03/01/2000CN1245975A Method for making dynamic random access memory capacitor
03/01/2000CN1245974A Method for manufacturing semiconductor element
03/01/2000CN1245973A Improved critical dimension control
03/01/2000CN1245972A Method for making film semiconductor device
03/01/2000CN1245971A Semiconductor substrate and its preparation method
03/01/2000CN1245899A Test method of electronic element and its testing equipment
03/01/2000CN1245819A Double side coated pressure sensitive adhesive sheet and its application
03/01/2000CN1050006C Semiconductor device and method of mfg. the same
03/01/2000CN1050005C Method for making integrated circuit with interconnected capacitor
02/2000
02/29/2000US6032083 Substrate transfer apparatus and heat treatment system using the same
02/29/2000US6032082 Method and CAD system for calculating semiconductor circuit resistance
02/29/2000US6031986 Thin-film passive circuit simulation on basis of reduced equivalent circuits
02/29/2000US6031985 Method, apparatus and system for analyzing failure of measured device
02/29/2000US6031980 Layout apparatus for LSI using cell library and method therefor
02/29/2000US6031979 Circuit partitioning apparatus for executing parallel circuit simulation and method therefor
02/29/2000US6031779 Dynamic memory
02/29/2000US6031778 Semiconductor integrated circuit
02/29/2000US6031774 Internal power supply voltage generating ciruit and the method for controlling thereof
02/29/2000US6031764 Nonvolatile semiconductor memory device
02/29/2000US6031614 Measurement system and method for measuring critical dimensions using ellipsometry
02/29/2000US6031607 System and method for inspecting pattern defect
02/29/2000US6031590 Structure and method of mounting driver IC using anisotropic conductive film in liquid crystal display device
02/29/2000US6031589 Liquid crystal display device and the fabrication method thereof
02/29/2000US6031571 Solid-state imaging device
02/29/2000US6031512 Color filter structure for color display device
02/29/2000US6031445 Transformer for integrated circuits
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