Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2000
04/04/2000US6046792 Differential interferometer system and lithographic step-and-scan apparatus provided with such a system
04/04/2000US6046627 Semiconductor device capable of operating stably with reduced power consumption
04/04/2000US6046546 Stabilizer for switch-mode powered RF plasma
04/04/2000US6046524 Elastic surface wave functional device and electronic circuit using the element
04/04/2000US6046507 Electrophoretic coating methodology to improve internal package delamination and wire bond reliability
04/04/2000US6046506 Semiconductor device with package
04/04/2000US6046505 Method for forming a contact during the formation of a semiconductor device
04/04/2000US6046503 Metalization system having an enhanced thermal conductivity
04/04/2000US6046502 Semiconductor device with improved adhesion between titanium-based metal layer and insulation film
04/04/2000US6046500 Method of controlling the spread of an adhesive on a circuitized organic substrate
04/04/2000US6046495 Semiconductor device having a tab tape and a ground layer
04/04/2000US6046494 High tensile nitride layer
04/04/2000US6046493 Semiconductor device with special emitter connection
04/04/2000US6046492 Semiconductor temperature sensor and the method of producing the same
04/04/2000US6046491 Semiconductor resistor element having improved resistance tolerance and semiconductor device therefor
04/04/2000US6046490 Semiconductor device having a capacitor dielectric element and wiring layers
04/04/2000US6046489 Capacitor with high-dielectric-constant dielectric and thick electrode and fabrication method thereof
04/04/2000US6046488 Semiconductor device having conductive layer and manufacturing method thereof
04/04/2000US6046487 Shallow trench isolation with oxide-nitride/oxynitride liner
04/04/2000US6046484 Gate structure of semiconductor memory
04/04/2000US6046483 Planar isolation structure in an integrated circuit
04/04/2000US6046482 Cell structure for mask ROM
04/04/2000US6046479 Electronic devices comprising thin-film transistors
04/04/2000US6046478 P-channel thin film transistor having a gate on the drain region of a field effect transistor
04/04/2000US6046477 Dense SOI programmable logic array structure
04/04/2000US6046476 SOI input protection circuit
04/04/2000US6046474 Field effect transistors having tapered gate electrodes for providing high breakdown voltage capability and methods of forming same
04/04/2000US6046473 Structure and process for reducing the on-resistance of MOS-gated power devices
04/04/2000US6046472 Graded LDD implant process for sub-half-micron MOS devices
04/04/2000US6046471 Ultra shallow junction depth transistors
04/04/2000US6046469 Semiconductor storage device having a capacitor and a MOS transistor
04/04/2000US6046468 Dynamic random access memory device and method for producing the same
04/04/2000US6046467 Semiconductor device having capacitor
04/04/2000US6046457 Charged particle beam apparatus having anticontamination means
04/04/2000US6046439 System and method for thermal processing of a semiconductor substrate
04/04/2000US6046435 Method of heating a substrate with multiple selectively deactuated heaters
04/04/2000US6046429 Laser repair process for printed wiring boards
04/04/2000US6046410 Interface structures for electronic devices
04/04/2000US6046364 Regeneration of metal CVD precursors
04/04/2000US6046117 Immersing wafer in etchant mixture of concentrated nitric and hydrofluoric acids to minimize loss of substrate material and extend etching bath life
04/04/2000US6046116 Method for minimizing the critical dimension growth of a feature on a semiconductor wafer
04/04/2000US6046115 Method for removing etching residues and contaminants
04/04/2000US6046114 Method for producing a semiconductor device
04/04/2000US6046113 Combined dry and wet etch for improved silicide formation
04/04/2000US6046111 Method and apparatus for endpointing mechanical and chemical-mechanical planarization of microelectronic substrates
04/04/2000US6046110 Copper-based metal polishing solution and method for manufacturing a semiconductor device
04/04/2000US6046109 Creation of local semi-insulating regions on semiconductor substrates
04/04/2000US6046108 Coating top dielectric layer and trench surfaces with barrier layer, overfilling trench with copper, thinning copper layer and passivating with silicon or germanium, polishing surface down to dielectric and leaving passivated copper in trench
04/04/2000US6046107 Electroless copper employing hypophosphite as a reducing agent
04/04/2000US6046106 High density plasma oxide gap filled patterned metal layers with improved electromigration resistance
04/04/2000US6046105 Preferential lateral silicidation of gate with low source and drain silicon consumption
04/04/2000US6046104 Low pressure baked HSQ gap fill layer following barrier layer deposition for high integrity borderless vias
04/04/2000US6046103 Borderless contact process for a salicide devices
04/04/2000US6046101 Passivation technology combining improved adhesion in passivation and a scribe street without passivation
04/04/2000US6046100 Method of fabricating a fabricating plug and near-zero overlap interconnect line
04/04/2000US6046099 Plug or via formation using novel slurries for chemical mechanical polishing
04/04/2000US6046098 Process of forming metal silicide interconnects
04/04/2000US6046097 Deposition method with improved step coverage
04/04/2000US6046096 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure
04/04/2000US6046095 Semiconductor substrate having polysilicon layers and fabrication process of semiconductor device using the same
04/04/2000US6046094 Method of forming wafer alignment patterns
04/04/2000US6046093 Method of forming capacitors and related integrated circuitry
04/04/2000US6046092 Method for manufacturing a capacitor
04/04/2000US6046090 Process to fabricate ultra-short channel MOSFETS with self-aligned silicide contact
04/04/2000US6046089 Selectively sized spacers
04/04/2000US6046088 Method for self-aligning polysilicon gates with field isolation and the resultant structure
04/04/2000US6046086 Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flash
04/04/2000US6046085 Elimination of poly stringers with straight poly profile
04/04/2000US6046084 Isotropic etching of a hemispherical grain silicon layer to improve the quality of an overlying dielectric layer
04/04/2000US6046083 Growth enhancement of hemispherical grain silicon on a doped polysilicon storage node capacitor structure, for dynamic random access memory applications
04/04/2000US6046082 Method for manufacturing semiconductor device
04/04/2000US6046081 Method for forming dielectric layer of capacitor
04/04/2000US6046080 Overcoating polysilicon layer on a dielectric layer with silicon oxynitride, forming layout for load resistor by photolithography, etching to remove silicon oxynitride and polysilicon layers from areas other than load resistor layout
04/04/2000US6046079 Method for prevention of latch-up of CMOS devices
04/04/2000US6046078 Semiconductor device fabrication with reduced masking steps
04/04/2000US6046077 Semiconductor device assembly method and semiconductor device produced by the method
04/04/2000US6046076 Vacuum dispense method for dispensing an encapsulant and machine therefor
04/04/2000US6046075 Oxide wire bond insulation in semiconductor assemblies
04/04/2000US6046073 Process for producing very thin semiconductor chips
04/04/2000US6046071 Plastic molded semiconductor package and method of manufacturing the same
04/04/2000US6046070 Method of post-processing solid-state imaging device
04/04/2000US6046068 Coating substrate surface with aluminum nitride passivating layer having pattern of openings, overcoating with metal, etching metal overlying passivating layer while leaving metal in openings to remain as separate contacts
04/04/2000US6046067 Micromechanical device and method for its production
04/04/2000US6046065 Crystal beam epitaxy to deposit a metamorphic semiconductor mirror layer material that can be crystallized lattice matched to gallium arsenide onto a laser structure wafer surface lattice matched to indium phosphide
04/04/2000US6046064 Method for fabricating chemical semiconductor device
04/04/2000US6046063 Simplification; increasing aperture ratio
04/04/2000US6046062 Method to monitor the kink effect
04/04/2000US6046061 Method of inspecting wafer water mark
04/04/2000US6046060 Method of making a high planarity, low CTE base for semiconductor reliability screening
04/04/2000US6046059 Bombarding the oxide present between plug and electrode with ions and mixing the oxide with materials of the electrode and the plug to increase electroconductivity between the electrode and the plug
04/04/2000US6045981 Method of manufacturing semiconductor device
04/04/2000US6045979 Method of photolithographically metallizing at least the inside of holes arranged in accordance with a pattern in a plate of an electrically insulating material
04/04/2000US6045978 Chemically treated photoresist for withstanding ion bombarded processing
04/04/2000US6045972 Coating method using aqueous photopolymerizable compositions
04/04/2000US6045968 Photosensitive composition
04/04/2000US6045967 Method and device using ArF photoresist
04/04/2000US6045892 Metal wiring structures for integrated circuits including seed layer
04/04/2000US6045862 CVD film forming method in which a film formation preventing gas is supplied in a direction from a rear surface of an object to be processed
04/04/2000US6045767 Charge for vertical boat growth process and use thereof
04/04/2000US6045743 Enclosing resin-used electronic parts together with both an oxygen absorbent requiring no moisture for absorption of oxygen and a drying agent in a container having a gas barrier property and then sealing the container and removing oxygen