Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2001
01/30/2001US6180292 Structure and manufacture of X-ray mask pellicle with washer-shaped member
01/30/2001US6180270 Heating gallium nitride bearing substrate layer according to predetermined time-temperature profile
01/30/2001US6180269 GaAs single crystal substrate and epitaxial wafer using the same
01/30/2001US6180265 Aluminum wire bond pad, dielectric layer, nickel layer, solder bump pad, spherical solder bump
01/30/2001US6180239 Microcontact printing on surfaces and derivative articles
01/30/2001US6180220 Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
01/30/2001US6180187 Method of making an electronic component using reworkable underfill encapsulants
01/30/2001US6180067 Improved reactor for generation of moisture (i.e., water) intended chiefly for use in semi-conductor manufacturing facilities
01/30/2001US6180029 Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same
01/30/2001US6180020 Polishing method and apparatus
01/30/2001US6179982 Introducing and reclaiming liquid in a wafer processing chamber
01/30/2001US6179955 Dry etching apparatus for manufacturing semiconductor devices
01/30/2001US6179951 Method of protecting a non-planar feature using compressive pads and apparatus thereof
01/30/2001US6179950 Polishing pad and process for forming same
01/30/2001US6179938 Method and apparatus for aligning the bonding head of a bonder, in particular a die bonder
01/30/2001US6179930 Pull-up drying method and apparatus
01/30/2001US6179925 Method and apparatus for improved control of process and purge material in substrate processing system
01/30/2001US6179924 Heater for use in substrate processing apparatus to deposit tungsten
01/30/2001US6179921 Backside gas delivery system for a semiconductor wafer processing system
01/30/2001US6179920 CVD apparatus for forming thin film having high dielectric constant
01/30/2001US6179915 On track coater unit cup set
01/30/2001US6179910 Pulling
01/30/2001US6179909 Work crystal orientation adjusting method and apparatus
01/30/2001US6179709 In-situ monitoring of linear substrate polishing operations
01/30/2001US6179609 Compact external torch assembly for semiconductor processing
01/30/2001US6179598 Apparatus for filling a gap between spaced layers of a semiconductor
01/30/2001US6179466 Method and apparatus for measuring substrate temperatures
01/30/2001US6179277 Liquid vaporizer systems and methods for their use
01/30/2001US6179200 Method for forming solder bumps of improved height and devices formed
01/30/2001US6179197 Missing wire detector
01/30/2001US6178975 Waste water classifying recovery apparatus in wafer cleaning system
01/30/2001US6178974 Minutely oscillating in two different directions an object immersed in cleaning fluid during ultrasonic vibration of cleaning fluid
01/30/2001US6178973 Generating ozone in a chamber by using a focused optical source and transporting the ozone to a treatment chamber containing the substrate to be cleaned of surface residue by oxidation
01/30/2001US6178972 Washing semiconductor integrated circuit with a neutral solution containing an oxidant to selectively remove debris/residue from wiring elements during their manufacturing step
01/30/2001US6178961 Wire saw control method and wire saw
01/30/2001US6178920 Plasma reactor with internal inductive antenna capable of generating helicon wave
01/30/2001US6178919 Perforated plasma confinement ring in plasma reactors
01/30/2001US6178918 Plasma enhanced chemical processing reactor
01/30/2001US6178861 Single station cutting apparatus for separating semiconductor packages
01/30/2001US6178833 Electronic parts loading device
01/30/2001US6178823 Apparatus and method for testing bond strength of electrical connection
01/30/2001US6178660 Pass-through semiconductor wafer processing tool and process for gas treating a moving semiconductor wafer
01/30/2001US6178654 Method and system for aligning spherical-shaped objects
01/30/2001US6178585 Slurries for chemical mechanical polishing
01/30/2001US6178580 Processing apparatus
01/30/2001CA2222158C Self accelerating and replenishing non-formaldehyde immersion coating method and composition
01/30/2001CA2119652C Silicon or silica substrate with a modified surface, process for producing the same, new orthoesters and process for producing the same
01/30/2001CA2013349C Fet, igbt and mct structures to enhance operating characteristics
01/25/2001WO2001006765A1 E-film cartridge with sensor avoidance feature
01/25/2001WO2001006657A1 Very fine grain field programmable gate array architecture and circuitry
01/25/2001WO2001006570A1 Non-volatile semiconductor memory cell and method for producing the same
01/25/2001WO2001006568A2 Trench-gate field-effect transistors and their manufacture
01/25/2001WO2001006567A1 Bi-directional semiconductor component
01/25/2001WO2001006564A1 Method for producing bonded wafer and bonded wafer
01/25/2001WO2001006563A1 High-density packaging of integrated circuits
01/25/2001WO2001006561A2 Ferroelectric memory capacitor
01/25/2001WO2001006560A1 Open/close device for open/close lid of untreated object storing box and treating system for untreated object
01/25/2001WO2001006559A1 Wafer prober
01/25/2001WO2001006558A1 Package of semiconductor device and method of manufacture thereof
01/25/2001WO2001006557A1 Method of making a charge compensation semiconductor device using neutron transmutation
01/25/2001WO2001006556A1 Process for fabricating semiconductor wafers with backside gettering
01/25/2001WO2001006555A1 Compositions and processes for spin etch planarization
01/25/2001WO2001006554A1 Method for producing siliconized polysilicon contacts in integrated semiconductor structures
01/25/2001WO2001006553A1 Polishing mixture and process for reducing the incorporation of copper into silicon wafers
01/25/2001WO2001006552A1 Conductivity reduction method for doped compound semiconductors
01/25/2001WO2001006551A1 Method for producing two differently doped adjacent regions in an integrated semiconductor
01/25/2001WO2001006550A1 Method of making a charge compensation semiconductor device using direct bonding and corresponding device
01/25/2001WO2001006547A1 A thin film resistor device and a method of manufacture therefor
01/25/2001WO2001006546A2 Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration
01/25/2001WO2001006545A2 ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME
01/25/2001WO2001006542A2 Method for producing a vertical semiconductor transistor component element and a vertical semiconductor transistor component
01/25/2001WO2001006540A1 Device and method for etching a substrate using an inductively coupled plasma
01/25/2001WO2001006539A1 Device and method for etching a substrate by means of an inductively coupled plasma
01/25/2001WO2001006538A1 Adaptive gcib for smoothing surfaces
01/25/2001WO2001006496A1 Inorganic permeation layer for micro-electric device
01/25/2001WO2001006442A2 Carrier tray for integrated circuits such as microprocessors
01/25/2001WO2001006318A1 Phase shifter film and production method therefor
01/25/2001WO2001006294A1 Optical system
01/25/2001WO2001006268A1 Electron density measurement and control system using plasma-induced changes in the frequency of a microwave oscillator
01/25/2001WO2001006044A1 Growth of epitaxial semiconductor material with improved crystallographic properties
01/25/2001WO2001006032A1 Method for forming metallic tungsten film
01/25/2001WO2001006031A1 Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
01/25/2001WO2001005726A2 METHOD FOR IMPROVING THE SURFACE SMOOTHNESS, THE CRYSTAL STRUCTURE AND THE MICROWAVE SURFACE RESISTANCE OF YBa2Cu3O7-δ HIGH-TEMPERATURE SUPERCONDUCTOR FILMS GROWN ON CeO2-BUFFERED r-CUT SAPPHIRE SUBSTRATES
01/25/2001WO2001005702A1 An acidic ozone solution having a high ozone content, a method for preparing the solution, and a cleaning method using the solution
01/25/2001WO2001005555A1 Methods and apparatuses for planarizing microelectronic substrate assemblies
01/25/2001WO2001005524A1 Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
01/25/2001WO2001005504A1 Analysing device with biochip
01/25/2001WO2001005487A1 Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels
01/25/2001WO2000065636A3 A bipolar transistor
01/25/2001WO2000060632A3 Electrostatically focused addressable field emission arraychips (afea's) for high-speed maskless digital e-beam direct write lithography and scanning electron microscopy
01/25/2001WO2000058995A3 Apparatus for improving plasma distribution and performance in an inductively coupled plasma
01/25/2001WO2000054933A3 Chemical mechanical polishing head having floating wafer retaining ring and wafer carrier with multi-zone polishing pressure control
01/25/2001DE19936862C1 Kontaktierung von Metalleiterbahnen eines integrierten Halbleiterchips Contacting of metal leads of an integrated semiconductor chip
01/25/2001DE19934554A1 Heat exchanger has cooling body with channel structure for introducing the cooling medium
01/25/2001DE19934114A1 Substrate carrier used to holding thin layer substrates during the manufacture of high pressure sensor elements comprises a base element for receiving the substrate arranged on a handling element having covering elements
01/25/2001DE19934089A1 Raising electrical conductivity in multi-component materials e.g. semiconductors and insulators comprises withdrawing a material component from the starting material by particle radiation
01/25/2001DE19933969A1 Bidirektionales Halbleiterbauelement Bidirectional semiconductor component
01/25/2001DE19933564C1 Verfahren zur Herstellung eines Vertikal-Halbleitertransistorbauelements und Vertikal-Halbleitertransistorbauelement A method for producing a vertical semiconductor transistor device and vertical semiconductor transistor device
01/25/2001DE19932844A1 Speicherkondensator Storage capacitor
01/25/2001DE19932829A1 Two step chemical mechanical polishing method for e.g. semiconductor wafer, involves providing two different slurries containing different lapping powder in two step polishing