Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2001
01/09/2001US6172380 Semiconductor material
01/09/2001US6172376 Method and system for measuring particles in a liquid sample
01/09/2001US6172370 Lateral PN arrayed digital x-ray image sensor
01/09/2001US6172365 Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
01/09/2001US6172364 Charged particle beam irradiation apparatus
01/09/2001US6172337 System and method for thermal processing of a semiconductor substrate
01/09/2001US6172330 Method and apparatus for forming a through hole in a ceramic green sheet
01/09/2001US6172322 Annealing an amorphous film using microwave energy
01/09/2001US6172318 Base for wire bond checking
01/09/2001US6172008 Process for preparing high crystallinity oxide thin film
01/09/2001US6171982 Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
01/09/2001US6171981 Electrode passivation layer of semiconductor device and method for forming the same
01/09/2001US6171980 Polyimide coating process with dilute TMAH and DI-water backrinse
01/09/2001US6171979 Semiconductor device and method of producing the same
01/09/2001US6171978 Method of manufacturing capacitor dielectric
01/09/2001US6171977 Semiconductor device applied to composite insulative film manufacturing method thereof
01/09/2001US6171976 Method of chemical-mechanical polishing
01/09/2001US6171975 Wet-chemical treatment method, treatment method of semiconductor substrate, and manufacturing method of semiconductor device
01/09/2001US6171974 High selectivity oxide etch process for integrated circuit structures
01/09/2001US6171973 Process for etching the gate in MOS technology using a SiON-based hard mask
01/09/2001US6171971 Freestanding multilayer wiring structure
01/09/2001US6171970 Method for forming high-density integrated circuit capacitors
01/09/2001US6171969 Uniform dopant distribution for mesas of semiconductors
01/09/2001US6171968 Method of forming damascene structure having borderless via design
01/09/2001US6171967 Method for forming a self-aligned metal wire of a semiconductor device
01/09/2001US6171966 Delineation pattern for epitaxial depositions
01/09/2001US6171965 Treatment method of cleaved film for the manufacture of substrates
01/09/2001US6171964 Method of forming a conductive spacer in a via
01/09/2001US6171963 Method for forming a planar intermetal dielectric using a barrier layer
01/09/2001US6171962 Shallow trench isolation formation without planarization mask
01/09/2001US6171961 Fabrication method of a semiconductor device
01/09/2001US6171960 Method of fabricating copper interconnection
01/09/2001US6171959 Method for making a semiconductor device
01/09/2001US6171958 Process for preparation of diffusion barrier for semiconductor
01/09/2001US6171957 Manufacturing method of semiconductor device having high pressure reflow process
01/09/2001US6171956 Method for improving the thermal conductivity of metal lines in integrated circuits
01/09/2001US6171955 Semiconductor fabricating method
01/09/2001US6171954 Method of manufacturing self-aligned contact
01/09/2001US6171953 Processes for making electronic devices with rubidum barrier film
01/09/2001US6171952 Methods of forming metallization layers and integrated circuits containing such
01/09/2001US6171951 Dual damascene method comprising ion implanting to densify dielectric layer and forming a hard mask layer with a tapered opening
01/09/2001US6171950 Method for forming a multilevel interconnection with low contact resistance in a semiconductor device
01/09/2001US6171949 Low energy passivation of conductive material in damascene process for semiconductors
01/09/2001US6171948 Method for filling structural gaps and intergrated circuitry
01/09/2001US6171947 Method of reducing incidence of stress-induced voiding in semiconductor interconnect lines
01/09/2001US6171946 Pattern formation method for multi-layered electronic components
01/09/2001US6171945 CVD nanoporous silica low dielectric constant films
01/09/2001US6171944 Method for bringing up lower level metal nodes of multi-layered integrated circuits for signal acquisition
01/09/2001US6171943 Forming a contact in an integrated circuit by chemical vapor deposition
01/09/2001US6171942 Methods of forming electrically conductive lines in integrated circuit memories using self-aligned silicide blocking layers
01/09/2001US6171941 Capacitor having platinum electrodes
01/09/2001US6171940 Method for fabricating semiconductor devices having small dimension gate structures
01/09/2001US6171939 Method for forming polysilicon gate electrode
01/09/2001US6171938 Method for fabricating semiconductor device capable of minimizing damage of lower layer using insulating layer resided in opening
01/09/2001US6171937 Process for producing an MOS transistor
01/09/2001US6171936 Method of producing co-planar Si and Ge composite substrate
01/09/2001US6171935 Process for producing an epitaxial layer with laterally varying doping
01/09/2001US6171934 Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling
01/09/2001US6171933 Semiconductor wafer cleaving method and apparatus
01/09/2001US6171932 Semiconductor substrate and production method thereof
01/09/2001US6171931 Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication
01/09/2001US6171930 Device isolation structure and device isolation method for a semiconductor power integrated circuit
01/09/2001US6171929 Shallow trench isolator via non-critical chemical mechanical polishing
01/09/2001US6171928 Method of fabricating shallow trench insolation
01/09/2001US6171927 Semiconductor device structure with differential field oxide thicknesses
01/09/2001US6171926 Methods for fabricating integrated circuit capacitor electrodes using first and second insulating layers and a buffer layer
01/09/2001US6171925 Capacitor, and methods for forming a capacitor
01/09/2001US6171924 Method of fabricating a dynamic random access memory capacitor
01/09/2001US6171923 Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitor
01/09/2001US6171922 SiCr thin film resistors having improved temperature coefficients of resistance and sheet resistance
01/09/2001US6171920 Method of forming heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction
01/09/2001US6171919 MOS Transistor formation process including post-spacer etch surface treatment for improved silicide formation
01/09/2001US6171918 Depleted poly mosfet structure and method
01/09/2001US6171917 Transistor sidewall spacers composed of silicon nitride CVD deposited from a high density plasma source
01/09/2001US6171916 Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof
01/09/2001US6171915 Method of fabricating a MOS-type transistor
01/09/2001US6171914 Synchronized implant process to simplify NLDD/PLDD stage and N+/P+stage into one implant
01/09/2001US6171913 Process for manufacturing a single asymmetric pocket implant
01/09/2001US6171912 Method of manufacturing a semiconductor device comprising a field effect transistor
01/09/2001US6171911 Method for forming dual gate oxides on integrated circuits with advanced logic devices
01/09/2001US6171910 Method for forming a semiconductor device
01/09/2001US6171909 Method for forming a stacked gate
01/09/2001US6171908 Method of fabricating self-aligned split gate flash memory cell
01/09/2001US6171907 Method for fabricating tunnel window in EEPROM cell with reduced cell pitch
01/09/2001US6171906 Method of forming sharp beak of poly to improve erase speed in split gate flash
01/09/2001US6171905 Semiconductor device and method of manufacturing the same
01/09/2001US6171904 Method for forming rugged polysilicon capacitor
01/09/2001US6171903 Method for forming a cylinder-shaped capacitor using a dielectric mask
01/09/2001US6171902 Method of forming a DRAM cylinder shaped capacitor
01/09/2001US6171901 Process for forming a capacitor structure
01/09/2001US6171900 CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFET
01/09/2001US6171899 Method for fabricating a capacitor
01/09/2001US6171898 Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing
01/09/2001US6171897 Method for manufacturing CMOS semiconductor device
01/09/2001US6171896 Method of forming shallow trench isolation by HDPCVD oxide
01/09/2001US6171895 Fabrication of buried channel devices with shallow junction depth
01/09/2001US6171894 Method of manufacturing BICMOS integrated circuits on a conventional CMOS substrate
01/09/2001US6171893 Method for forming self-aligned silicided MOS transistors with ESD protection improvement
01/09/2001US6171892 Method of manufacturing a semiconductor integrated circuit device
01/09/2001US6171891 Method of manufacture of CMOS device using additional implant regions to enhance ESD performance