| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 01/31/2001 | EP1071834A1 Method of passivating a cvd chamber |
| 01/31/2001 | EP1071833A2 Method and apparatus for modifying the profile of high-aspect-ratio gaps using differential plasma power |
| 01/31/2001 | EP0830732A4 Method for etching photolithographically produced quartz crystal blanks for singulation |
| 01/31/2001 | CN1282449A Reduced capacitance transistor with electron-static discharge protection structure and method for forming the same |
| 01/31/2001 | CN1282384A Magnetron sputtering source |
| 01/31/2001 | CN1282362A Abrasive, method of polishing wafer, and method of producing semiconductor device |
| 01/31/2001 | CN1282111A Semiconductor laminated substrate, crystal substrate and semiconductor device and manufacturing method thereof |
| 01/31/2001 | CN1282109A Optical receiving device integrated with circuit and manufacturing method thereof |
| 01/31/2001 | CN1282108A Semiconductor integrated circuit and checking method, crystal device and electronic device |
| 01/31/2001 | CN1282107A Wiring and its making method including the described wired semiconductor device and dry etching process |
| 01/31/2001 | CN1282104A Semiconductor device and its manufacturing method |
| 01/31/2001 | CN1282103A Technological process for making different gate medium thicknesses by using polysilicon mask and chemical mechanical process |
| 01/31/2001 | CN1282102A Bulk production process of thinned wafer separated from carrier and its equipment |
| 01/31/2001 | CN1282101A Reinforced semiconductor chip container |
| 01/31/2001 | CN1282100A Method for protecting additional structure of movable component in deep reaction ion etching process |
| 01/31/2001 | CN1282099A Processing device and method for semiconductor workpiece |
| 01/31/2001 | CN1282098A Method for forming semiconductor device |
| 01/31/2001 | CN1282005A Method for heating wafer and baking photoetch-resist film on wafer and its equipment |
| 01/31/2001 | CN1282004A Photoresist composition, its preparation method and method for forming pattern by using it |
| 01/31/2001 | CN1282003A Chip heating device and method for using heated chip |
| 01/31/2001 | CN1281991A Testing method for electronic component |
| 01/31/2001 | CN1061470C Method for manufacturing semiconductor chip bump |
| 01/31/2001 | CN1061469C Method of fabricating thin-film transistor having offset grid structure |
| 01/31/2001 | CN1061468C Method of fabricating MIS semiconductor device |
| 01/31/2001 | CN1061387C Method for forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cattodes |
| 01/31/2001 | CN1061386C 密封装置 Sealing device |
| 01/30/2001 | US6182271 Cell placement method and apparatus for integrated circuit and storage medium having cell placement program for integrated circuit stored thereon |
| 01/30/2001 | US6182254 Rambus ASIC having high speed testing function and testing method thereof |
| 01/30/2001 | US6182247 Embedded logic analyzer for a programmable logic device |
| 01/30/2001 | US6181977 Control for technique of attaching a stiffener to a flexible substrate |
| 01/30/2001 | US6181623 Semiconductor MOS/BIPOLAR composite transistor and semiconductor memory device using the same |
| 01/30/2001 | US6181610 Semiconductor device having current auxiliary circuit for output circuit |
| 01/30/2001 | US6181598 Data line disturbance free memory block divided flash memory and microcomputer having flash memory |
| 01/30/2001 | US6181584 Semiconductor device with internal power supply circuit, together with liquid crystal device and electronic equipment using the same |
| 01/30/2001 | US6181200 Radio frequency power device |
| 01/30/2001 | US6181196 Accurate bandgap circuit for a CMOS process without NPN devices |
| 01/30/2001 | US6181186 Power transistor with over-current protection controller |
| 01/30/2001 | US6181184 Variable delay circuit and semiconductor intergrated circuit device |
| 01/30/2001 | US6181160 Programmable logic device with hierarchical interconnection resources |
| 01/30/2001 | US6181147 Device evaluation circuit |
| 01/30/2001 | US6181143 Method for performing a high-temperature burn-in test on integrated circuits |
| 01/30/2001 | US6181069 High frequency discharging method and apparatus, and high frequency processing apparatus |
| 01/30/2001 | US6181018 Semiconductor device |
| 01/30/2001 | US6181014 Integrated circuit memory devices having highly integrated SOI memory cells therein |
| 01/30/2001 | US6181013 Conductor comprising copper incompletely filling the hole of a barrier layer-lined trench extending through a dielectric layer on an electroconductive substrate whereby a planarized covering of copper silicide or germanide completes the fill |
| 01/30/2001 | US6181012 Structure comprising a copper alloy layer laminated between copper conductor body and the interconnected electronic device; electromigration resistance, surface adhesion |
| 01/30/2001 | US6181009 Electronic component with a lead frame and insulating coating |
| 01/30/2001 | US6181005 Semiconductor device wiring structure |
| 01/30/2001 | US6181003 Semiconductor device packaged in plastic package |
| 01/30/2001 | US6180998 DRAM with built-in noise protection |
| 01/30/2001 | US6180997 Structure for a multi-layered dielectric layer and manufacturing method thereof |
| 01/30/2001 | US6180996 Semiconductor device comprising a polydiode element |
| 01/30/2001 | US6180995 Integrated passive devices with reduced parasitic substrate capacitance |
| 01/30/2001 | US6180993 Ion repulsion structure for fuse window |
| 01/30/2001 | US6180992 Fuse configuration for a semiconductor storage device |
| 01/30/2001 | US6180988 Self-aligned silicided MOSFETS with a graded S/D junction and gate-side air-gap structure |
| 01/30/2001 | US6180987 Integrated circuit transistor with low-resistivity source/drain structures at least partially recessed within a dielectric base layer |
| 01/30/2001 | US6180986 Semiconductor device and method of manufacturing the same |
| 01/30/2001 | US6180985 SOI device and method for fabricating the same |
| 01/30/2001 | US6180984 Integrated circuit impedance device and method of manufacture therefor |
| 01/30/2001 | US6180982 Semiconductor device and method of making thereof |
| 01/30/2001 | US6180981 Termination structure for semiconductor devices and process for manufacture thereof |
| 01/30/2001 | US6180980 Trench non-volatile memory cell |
| 01/30/2001 | US6180979 Memory cell arrangement with vertical MOS transistors and the production process thereof |
| 01/30/2001 | US6180978 Disposable gate/replacement gate MOSFETs for sub-0.1 micron gate length and ultra-shallow junctions |
| 01/30/2001 | US6180977 Self-aligned edge implanted cell to reduce leakage current and improve program speed in split-gate flash |
| 01/30/2001 | US6180976 Thin-film capacitors and methods for forming the same |
| 01/30/2001 | US6180975 Depletion strap semiconductor memory device |
| 01/30/2001 | US6180974 Semiconductor storage device having a capacitor electrode formed of at least a platinum-rhodium oxide |
| 01/30/2001 | US6180973 Semiconductor memory device and method for manufacturing the same |
| 01/30/2001 | US6180972 Buried, implanted plate for DRAM trench storage capacitors |
| 01/30/2001 | US6180971 Capacitor and method of manufacturing the same |
| 01/30/2001 | US6180970 Microelectronic devices including ferroelectric capacitors with lower electrodes extending into contact holes |
| 01/30/2001 | US6180968 Compound semiconductor device and method of manufacturing the same |
| 01/30/2001 | US6180965 Semiconductor device having a static induction in a recessed portion |
| 01/30/2001 | US6180959 Static induction semiconductor device, and driving method and drive circuit thereof |
| 01/30/2001 | US6180957 Thin-film semiconductor device, and display system using the same |
| 01/30/2001 | US6180956 Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
| 01/30/2001 | US6180954 Dual-walled exhaust tubing for vacuum pump |
| 01/30/2001 | US6180947 Multi-element deflection aberration correction for electron beam lithography |
| 01/30/2001 | US6180944 Large area X-ray imager with vented seam and method of fabrication |
| 01/30/2001 | US6180931 Heater unit for semiconductor processing |
| 01/30/2001 | US6180926 Heat exchanger apparatus for a semiconductor wafer support and method of fabricating same |
| 01/30/2001 | US6180891 Control of size and heat affected zone for fine pitch wire bonding |
| 01/30/2001 | US6180869 Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| 01/30/2001 | US6180742 Carboxy copolymer, neutralizer and crosslinker |
| 01/30/2001 | US6180696 A cured epoxy materials has high glass transition temperature as well as excellent electrical and mechanical properties; soldering interconnected structures for jointing semiconductor devices to substrates |
| 01/30/2001 | US6180543 Method of generating two nitrogen concentration peak profiles in gate oxide |
| 01/30/2001 | US6180542 Nitriding and oxidation of tantalum compound to tantalum oxynitride; heat and plasma treatment |
| 01/30/2001 | US6180541 Preheating carrier gas; vaporizing organometallic compound; forming thin film on semiconductor |
| 01/30/2001 | US6180540 Method for forming a stabilized fluorosilicate glass layer |
| 01/30/2001 | US6180539 Method of forming an inter-poly oxide layer |
| 01/30/2001 | US6180538 Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition |
| 01/30/2001 | US6180537 Method of fabricating dielectric layer in alignment marker area |
| 01/30/2001 | US6180535 Approach to the spacer etch process for CMOS image sensor |
| 01/30/2001 | US6180534 Borderless vias without degradation of HSQ gap fill layers |
| 01/30/2001 | US6180533 Plasma etching through hard masking layer on semiconductor; polymerization inhibition |
| 01/30/2001 | US6180532 Etching with high oxide-to-nitride selectivity to form vertical profile |
| 01/30/2001 | US6180531 Etching amorphous carbon fluoride film using resist as mask;applying negative bias |
| 01/30/2001 | US6180530 Self-aligned contact structure |