Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2001
01/23/2001US6177730 Semiconductor bare chip, method of manufacturing semiconductor bare chip and mounting structure of semiconductor bare chip
01/23/2001US6177729 Rolling ball connector
01/23/2001US6177728 Integrated circuit chip device having balanced thermal expansion
01/23/2001US6177725 Semiconductor device having an improved structure for preventing cracks, improved small-sized semiconductor and method of manufacturing the same
01/23/2001US6177722 Leadless array package
01/23/2001US6177719 Chip scale package of semiconductor
01/23/2001US6177718 Resin-sealed semiconductor device
01/23/2001US6177717 Low-noise vertical bipolar transistor and corresponding fabrication process
01/23/2001US6177716 Low loss capacitor structure
01/23/2001US6177715 Integrated circuit having a level of metallization of variable thickness
01/23/2001US6177714 Semiconductor device having a fuse of the laser make-link programming type
01/23/2001US6177707 Semiconductor device comprising a glass supporting body onto which a substrate with semiconductor elements and a metalization is attached by means of an adhesive
01/23/2001US6177704 Semiconductor device containing a lateral MOS transistor
01/23/2001US6177703 Method and apparatus for producing a single polysilicon flash EEPROM having a select transistor and a floating gate transistor
01/23/2001US6177702 Semiconductor component with a split floating gate and tunnel region
01/23/2001US6177701 Semiconductor device with resistor and fabrication method therof
01/23/2001US6177700 Capacitor in a dynamic random access memory
01/23/2001US6177699 DRAM cell having a verticle transistor and a capacitor formed on the sidewalls of a trench isolation
01/23/2001US6177698 Formation of controlled trench top isolation layers for vertical transistors
01/23/2001US6177696 Integration scheme enhancing deep trench capacitance in semiconductor integrated circuit devices
01/23/2001US6177695 DRAM using oxide plug in bitline contacts during fabrication
01/23/2001US6177693 Semiconductor device
01/23/2001US6177692 Solid-state image sensor output MOSFET circuit
01/23/2001US6177691 Cell based array having compute drive ratios of N:1
01/23/2001US6177688 Low defect densities
01/23/2001US6177687 Semiconductor device having gate electrode shared between two sets of active regions and fabrication thereof
01/23/2001US6177685 Nitride-type III-V HEMT having an InN 2DEG channel layer
01/23/2001US6177681 Apparatus method for testing opening state for hole in semiconductor device
01/23/2001US6177679 Ion implanter with impurity interceptor which removes undesired impurities from the ion beam
01/23/2001US6177661 Heated stage for holding wafers during semiconductor device fabrication
01/23/2001US6177646 Method and device for plasma treatment
01/23/2001US6177499 Crosslinked polymethylmethacrylate (?pmma?), of the type usable in or designed for architectural uses
01/23/2001US6177364 Integration of low-K SiOF for damascene structure
01/23/2001US6177363 Providing an oxide layer on a semiconductor substrate, depositing nitride layer on oxide layer to introduce defects in nitride layer such that a defect density is sufficiently large to provide a low interfacial trap density
01/23/2001US6177362 Fabrication method for gate structure having gate dielectric layers of different thickness
01/23/2001US6177361 In-situ formation of metal oxide and ferroelectric oxide films
01/23/2001US6177360 Positioning a layer of a dielectric precursors selected from a silsesquioxane and a photosensitive amine generator selected from carbamates, benzyl sulfonamides etc, heating to generate amine, reacting with silsesquionxane to form dielectic
01/23/2001US6177359 Method for detaching an epitaxial layer from one substrate and transferring it to another substrate
01/23/2001US6177358 Photo-stimulated etching of CaF2
01/23/2001US6177357 Laminating a resist on a polymeric film, exposing a pattern into the resist, developing resist with a aqueous solution to form an image, etching portions of polymer film not covered by crosslinked resist with a base, then stripping the resist
01/23/2001US6177356 Semiconductor cleaning apparatus
01/23/2001US6177355 Pad etch process capable of thick titanium nitride arc removal
01/23/2001US6177354 Method of etching a substrate
01/23/2001US6177353 Metallization etching techniques for reducing post-etch corrosion of metal lines
01/23/2001US6177352 Method for producing semiconductor bodies with an MOVPE layer sequence
01/23/2001US6177351 Method and structure for etching a thin film perovskite layer
01/23/2001US6177350 Sputter etching the patterned dielectric surface, depositing a continuous wetting layer of titanim over the patterned dielectric surface using ion sputtering, covering the wetting layer with a layer of aluminum
01/23/2001US6177349 Chemically treating wafer surface with a solution of ammonium fluoride, diammonium hydrogen citrate, and triammonium citrate, a surfactant and water to remove a segment of dielectric material form the surface of open dielectric field
01/23/2001US6177348 Low temperature via fill using liquid phase transport
01/23/2001US6177347 Silicon nitride layer within via is removed wherein copper line underlying the silicon nitride layer is exposed within the via, exposed copper line is oxidized forming opper oxide, cleaning the via and reducing oxide to form copper
01/23/2001US6177346 Integrated circuitry and method of forming a field effect transistor
01/23/2001US6177345 Method of silicide film formation onto a semiconductor substrate
01/23/2001US6177344 BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambient
01/23/2001US6177343 Process for producing semiconductor devices including an insulating layer with an impurity
01/23/2001US6177342 Method of forming dual damascene interconnects using glue material as plug material
01/23/2001US6177341 Method for forming interconnections in semiconductor devices
01/23/2001US6177340 Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structure
01/23/2001US6177339 Semiconductor processing methods of forming integrated circuitry and semiconductor processing methods of forming dynamic random access memory (DRAM) circuitry
01/23/2001US6177338 Two step barrier process
01/23/2001US6177337 Method of reducing metal voids in semiconductor device interconnection
01/23/2001US6177336 Method for fabricating a metal-oxide semiconductor device
01/23/2001US6177335 Method of forming polycide
01/23/2001US6177334 Manufacturing method capable of preventing corrosion of metal oxide semiconductor
01/23/2001US6177333 Method for making a trench isolation for semiconductor devices
01/23/2001US6177332 Method of manufacturing shallow trench isolation
01/23/2001US6177331 Method for manufacturing semiconductor device
01/23/2001US6177330 Method for correcting alignment, method for manufacturing a semiconductor device and a semiconductor device
01/23/2001US6177329 Integrated circuit structures having gas pockets and method for forming integrated circuit structures having gas pockets
01/23/2001US6177328 Methods of forming capacitors methods of forming DRAM cells, and integrated circuits incorporating structures and DRAM cell structures
01/23/2001US6177327 Method of manufacturing capacitor for mixed-moded circuit device
01/23/2001US6177326 Method to form bottom electrode of capacitor
01/23/2001US6177325 Self-aligned emitter and base BJT process and structure
01/23/2001US6177324 ESD protection device for STI deep submicron technology
01/23/2001US6177323 Method to form MOSFET with an elevated source/drain for PMOSFET
01/23/2001US6177322 High voltage transistor with high gated diode breakdown voltage
01/23/2001US6177321 Semiconductor device and fabrication method thereof
01/23/2001US6177320 Method for forming a self aligned contact in a semiconductor device
01/23/2001US6177319 Method of manufacturing salicide layer
01/23/2001US6177318 Integration method for sidewall split gate monos transistor
01/23/2001US6177317 Method of making nonvolatile memory devices having reduced resistance diffusion regions
01/23/2001US6177316 Post barrier metal contact implantation to minimize out diffusion for NAND device
01/23/2001US6177315 Method of fabricating a high density EEPROM array
01/23/2001US6177314 Method of manufacturing a semiconductor device comprising a field effect transistor
01/23/2001US6177313 Method for forming a muti-level ROM memory in a dual gate CMOS process, and corresponding ROM memory cell
01/23/2001US6177312 Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device
01/23/2001US6177311 Method for making a floating gate memory with improved interpoly dielectric
01/23/2001US6177310 Method for forming capacitor of memory cell
01/23/2001US6177309 Methods of forming integrated circuit capacitors having merged annular storage electrodes therein
01/23/2001US6177308 Method for manufacturing stacked capacitor
01/23/2001US6177307 Process of planarizing crown capacitor for integrated circuit
01/23/2001US6177306 Method for forming a silicide in a dynamic random access memory device
01/23/2001US6177305 Fabrication of metal-insulator-metal capacitive structures
01/23/2001US6177304 Self-aligned contact process using a poly-cap mask
01/23/2001US6177303 Method of manufacturing a semiconductor device with a field effect transistor
01/23/2001US6177302 Method of manufacturing a thin film transistor using multiple sputtering chambers
01/23/2001US6177301 Method of fabricating thin film transistors for a liquid crystal display
01/23/2001US6177300 Memory with storage cells having SOI drive and access transistors with tied floating body connections
01/23/2001US6177299 Transistor having substantially isolated body and method of making the same
01/23/2001US6177297 Method of forming metallic fuse demanding lower laser power for circuit repair
01/23/2001US6177296 Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform