Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2001
02/20/2001US6189570 Gas panel
02/20/2001US6189552 Substrate processing device
02/20/2001US6189547 Ultrasonic washing apparatus
02/20/2001US6189546 Polishing process for manufacturing dopant-striation-free polished silicon wafers
02/20/2001US6189485 Plasma CVD apparatus suitable for manufacturing solar cell and the like
02/20/2001US6189483 Process kit
02/20/2001US6189481 Microwave plasma processing apparatus
02/20/2001US6189404 Robot for handling
02/20/2001US6189363 Structure of molding tool for manufacturing cooling fins
02/20/2001US6189339 Method for producing silica glass used for photolithography
02/20/2001US6189238 Portable purge system for transporting materials
02/20/2001US6189208 Flip chip mounting technique
02/20/2001CA2223624C Tricyclic 5,6-dihydro-9h-pyrazolo[3,4-c]-1,2,4-triazolo[4,3-.alpha.]pyridines
02/20/2001CA2202003C Method for production of soi substrate by pasting and soi substrate
02/20/2001CA2193098C Preparation of semiconductor substrates
02/15/2001WO2001011930A2 A cleaving process to fabricate multilayered substrates using low implantation doses
02/15/2001WO2001011923A1 Ceramic heater
02/15/2001WO2001011922A1 Ceramic heater
02/15/2001WO2001011921A1 Ceramic heater
02/15/2001WO2001011919A1 Ceramic heater
02/15/2001WO2001011778A1 Circuit configuration for supplying power to an integrated circuit via a pad
02/15/2001WO2001011777A1 An integrated circuit provided with a fail-safe mode
02/15/2001WO2001011773A1 Electronic circuit for imitating a capacitor with variable capacitance
02/15/2001WO2001011750A1 Circuits for dynamic turn off of nmos output drivers during eos/esd stress
02/15/2001WO2001011730A1 Improved connectors for an electrostatic chuck
02/15/2001WO2001011700A1 System comprising a transistor function
02/15/2001WO2001011695A1 Double recessed transistor
02/15/2001WO2001011691A1 Memory cell with self-aligned floating gate and separate select gate, and fabrication process
02/15/2001WO2001011690A1 Unipolar field-effect transistor
02/15/2001WO2001011688A1 Integrated circuit power and ground routing
02/15/2001WO2001011687A1 Gate isolated triple-well non-volatile cell
02/15/2001WO2001011685A1 Double triggering mechanism for achieving faster turn-on
02/15/2001WO2001011683A1 Method for providing a dopant level for polysilicon for flash memory devices
02/15/2001WO2001011682A1 Method for producing an insulation
02/15/2001WO2001011681A1 Mosfet device having recessed gate-drain shield and method
02/15/2001WO2001011680A1 Method and apparatus for characterizing a semiconductor device
02/15/2001WO2001011679A1 Method and apparatus for performing run-to-run control in a batch manufacturing environment
02/15/2001WO2001011678A1 Method and apparatus for run-to-run controlling of overlay registration
02/15/2001WO2001011677A1 Method for manufacturing semiconductor device
02/15/2001WO2001011675A1 Method to form narrow structures using double-damascene process
02/15/2001WO2001011674A1 Etching process for dual layer metallisation
02/15/2001WO2001011673A2 Method for etching oxide films containing bismuth
02/15/2001WO2001011672A1 Method of etching a layer using sacrificial elements
02/15/2001WO2001011671A1 Process for reducing waviness in semiconductor wafers
02/15/2001WO2001011670A1 Method for fabricating single crystal materials over cmos devices
02/15/2001WO2001011669A1 Salicide process for mosfet integrated circuit
02/15/2001WO2001011668A1 Method of manufacturing semiconductor device
02/15/2001WO2001011667A1 Method for transferring a thin layer comprising a step of excess fragilization
02/15/2001WO2001011666A2 Method of etching a wafer layer using multiple layers of the same photoresistant material and structure formed thereby
02/15/2001WO2001011664A1 Support container and semiconductor manufacturing/inspecting device
02/15/2001WO2001011663A1 Hot plate unit
02/15/2001WO2001011662A2 Vapor phase connection techniques
02/15/2001WO2001011659A1 System and method for providing implant dose uniformity across the surface of a substrate
02/15/2001WO2001011658A1 Plasma reactor for treating substrates having large surfaces
02/15/2001WO2001011656A1 Calibration of a scanning electron microscope
02/15/2001WO2001011650A1 Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof
02/15/2001WO2001011431A2 Method and apparatus of holding semiconductor wafers for lithography and other wafer processes
02/15/2001WO2001011429A1 Antireflective coating for photoresist compositions
02/15/2001WO2001011426A1 Method of forming a masking pattern on a surface
02/15/2001WO2001011104A1 Ion beam processing of a substrate
02/15/2001WO2001011098A2 Copper deposit process
02/15/2001WO2001010756A1 Load lock system for foups
02/15/2001WO2001010733A1 Inverted pressure vessel with horizontal through loading
02/15/2001WO2001010644A1 Method and apparatus for cleaving a substrate
02/15/2001WO2001010617A1 A homogenization enhancing thermoplastic foam extrusion screw
02/15/2001WO2001010609A1 Method and apparatus for contactless capturing and handling of spherical-shaped objects
02/15/2001WO2001010608A1 Work transfer device
02/15/2001WO2001010548A1 Rejuvenable ambient temperature purifier
02/15/2001WO2001004022B1 Transport module with latching door
02/15/2001WO2000065631A3 Apparatus and method for exposing a substrate to plasma radicals
02/15/2001WO2000063961B1 Dual process semiconductor heterostructures and methods
02/15/2001WO2000062324A3 System and method to correct for distortion caused by bulk heating in a substrate
02/15/2001WO2000059029A3 Method and apparatus for enabling conventional wire bonding to copper-based bond pad features
02/15/2001WO2000059008A3 Method and apparatus for forming an electrical contact with a semiconductor substrate
02/15/2001WO2000057235A3 Multi-beam scanner including a dove prism array
02/15/2001WO2000049643A3 Gate insulator comprising high and low dielectric constant parts
02/15/2001WO2000046838A3 Hf vapor phase wafer cleaning and oxide etching
02/15/2001WO2000038238A8 Reduced diffusion of a mobile ion from a metal oxide ceramic into the substrate
02/15/2001WO2000033140A8 Composition and method for removing probing ink and negative photoresist from silicon wafers
02/15/2001DE19953152C1 Process for wet-chemical treatment of semiconductor wafer after mechanical treatment in lapping machine comprises subjecting to ultrasound in an alkaline cleaning solution before etching and rinsing steps
02/15/2001DE19938340C1 Production of semiconductor wafer comprises simultaneously polishing the front and rear sides of wafer between rotating polishing plates using an alkaline polishing sol and then an alcohol, cleaning, drying and applying an epitaxial layer
02/15/2001DE19938209A1 Halbleiteranordnung und Verfahren zur Herstellung A semiconductor device and method for producing
02/15/2001DE19936834A1 Sägedraht und Verfahren zum Trennläppen von sprödharten Werkstücken Saw wire and method for Trennläppen of hard brittle workpieces
02/15/2001DE19934605A1 Device, such as a rotating table, for rotational positioning of components has coarse and fine adjusters, of compact design, to enable a component to be moved quickly and accurately into position
02/15/2001DE19933248A1 Athermalisiertes Teleskop Athermalized telescope
02/15/2001DE19931124C1 Speicherzellenanordnung mit einem ferroelektrischen Transistor Memory cell arrangement with a ferroelectric transistor
02/15/2001DE19930104C1 Verfahren zur Herstellung einer Elektrodenanordnung A process for producing an electrode assembly
02/15/2001DE19738118C2 Montageverfahren für ein Halbleiterbauelement A mounting method of a semiconductor device
02/15/2001DE10037216A1 Connecting structure for forming an electrical connection which can be mounted on a testing card for testing semiconductor wafers comprises a connecting substrate with a connecting element
02/15/2001DE10036672A1 Gallium arsenide single crystal wafer has surfaces formed as a substrate for growing an n-type layer and a p-type layer by means of liquid phase epitaxy using silicon as amphoteric dopant
02/15/2001DE10030472A1 Semiconductor manufacturing process and system to monitor a system server in real time
02/15/2001DE10024297A1 Semiconducting memory device has replacement word lines with minimum distance between replacement word lines greater than minimum distance between normal word lines
02/15/2001DE10020523A1 Processing device consists of several moving containers arranged so that they are in an ambience position to surround the objects to be treated as well as in a stand-by position in which they do not surround the object
02/15/2001CA2479400A1 Apparatus and reactor for generating and feeding high purity moisture
02/15/2001CA2381503A1 Copper deposit process
02/15/2001CA2375365A1 Method of forming a masking pattern on a surface
02/14/2001EP1076414A2 Surface-acoustic-wave device for flip-chip mounting
02/14/2001EP1076361A2 Chip assembly module of bump connection type using a multi-layer printed circuit substrate
02/14/2001EP1076360A2 Process for mounting semiconductor device and mounting apparatus
02/14/2001EP1076359A2 Laser irradiation device