| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 03/06/2001 | US6198159 Bonded wafer, process for producing same and substrate |
| 03/06/2001 | US6198158 Memory circuit including a semiconductor structure having more usable substrate area |
| 03/06/2001 | US6198157 Semiconductor device having buried boron and carbon regions |
| 03/06/2001 | US6198156 Bipolar power transistors and manufacturing method |
| 03/06/2001 | US6198155 Semiconductor device comprising an integrated circuit provided with a ceramic security coating and method of manufacturing such a device |
| 03/06/2001 | US6198153 Capacitors with silicized polysilicon shielding in digital CMOS process |
| 03/06/2001 | US6198152 Semiconductor device |
| 03/06/2001 | US6198150 Integrated circuit with deep trench having multiple slopes |
| 03/06/2001 | US6198149 Semiconductor device having novel insulating film structure |
| 03/06/2001 | US6198144 Passivation of sidewalls of a word line stack |
| 03/06/2001 | US6198143 Semiconductor device including a layer of thermally stable titanium silicide |
| 03/06/2001 | US6198142 Transistor with minimal junction capacitance and method of fabrication |
| 03/06/2001 | US6198141 Insulated gate semiconductor device and method of manufacturing the same |
| 03/06/2001 | US6198140 Semiconductor device including several transistors and method of manufacturing the same |
| 03/06/2001 | US6198139 Complementary MOS device |
| 03/06/2001 | US6198138 Analogue misfet with threshold voltage adjuster |
| 03/06/2001 | US6198137 Semiconductor device |
| 03/06/2001 | US6198135 Semiconductor device having electrostatic discharge protection element and manufacturing method thereof |
| 03/06/2001 | US6198134 Semiconductor device having a common substrate bias |
| 03/06/2001 | US6198133 Electro-optical device having silicon nitride interlayer insulating film |
| 03/06/2001 | US6198132 Thin-film device with annular shaped insulation on its gate electrode |
| 03/06/2001 | US6198131 High-voltage metal-oxide semiconductor |
| 03/06/2001 | US6198128 Method of manufacturing a semiconductor device, and semiconductor device |
| 03/06/2001 | US6198127 MOS-gated power device having extended trench and doping zone and process for forming same |
| 03/06/2001 | US6198125 Semiconductor device and method of fabricating same |
| 03/06/2001 | US6198124 Capacitor comprising a dielectric layer comprising tantalum oxide (ta2o5) between first and second capacitor plates; and an amorphous diffusion barrier layer such as titanium carbonitride between the dielectric layer and a plate |
| 03/06/2001 | US6198123 Shielded integrated circuit capacitor connected to a lateral transistor |
| 03/06/2001 | US6198122 Semiconductor memory and method of fabricating the same |
| 03/06/2001 | US6198121 Method fabricating a DRAM cell with an area equal to four times the used minimum feature |
| 03/06/2001 | US6198120 Comprising a silicon substrate, an epitaxial thin film of titanium aluminum nitride having low oxygen content, a metal thin film, an oriented ferroelectric thin film composed of an oxide having perovskite structure |
| 03/06/2001 | US6198119 Ferroelectric element and method of producing the same |
| 03/06/2001 | US6198117 Transistor having main cell and sub-cells |
| 03/06/2001 | US6198116 Using selective ion implantations, and a combined optical and electron beam lithographic process, the latter in small dimension gate areas; low energy requirements, low fabrication cost, accuracy and performance |
| 03/06/2001 | US6198115 IGBT with reduced forward voltage drop and reduced switching loss |
| 03/06/2001 | US6198114 Field effect transistor having dielectrically isolated sources and drains and method for making same |
| 03/06/2001 | US6198112 III-V compound semiconductor luminescent device |
| 03/06/2001 | US6198109 Aperture apparatus used for photolithography and method of fabricating the same |
| 03/06/2001 | US6198075 Rapid heating and cooling vacuum oven |
| 03/06/2001 | US6198074 System and method for rapid thermal processing with transitional heater |
| 03/06/2001 | US6198067 Plasma processing device for circuit supports |
| 03/06/2001 | US6198052 Circuit board with terminal accommodating level differences |
| 03/06/2001 | US6197983 Catalytic production of bisamidegermanes from bisamidegermylene compounds in the presence of hydrogen; purity |
| 03/06/2001 | US6197706 Low temperature method to form low k dielectric |
| 03/06/2001 | US6197705 Placing substrate in parallel plate type reactor chamber; inducing reaction in gaseous mixture comprising tetraethoxysilane, ozone and fluorotriethoxysilane in presence of plasma to produce deposition of silicon oxide film |
| 03/06/2001 | US6197704 Method of fabricating semiconductor device |
| 03/06/2001 | US6197703 Apparatus and method for manufacturing semiconductors using low dielectric constant materials |
| 03/06/2001 | US6197702 Fabrication process of a semiconductor integrated circuit device |
| 03/06/2001 | US6197701 Lightly nitridation surface for preparing thin-gate oxides |
| 03/06/2001 | US6197700 Fabrication method for bottom electrode of capacitor |
| 03/06/2001 | US6197699 In situ dry cleaning process for poly gate etch |
| 03/06/2001 | US6197698 Method for etching a poly-silicon layer of a semiconductor wafer |
| 03/06/2001 | US6197697 Method of patterning semiconductor materials and other brittle materials |
| 03/06/2001 | US6197696 Method for forming interconnection structure |
| 03/06/2001 | US6197695 Process for the manufacture of passive and active components on the same insulating substrate |
| 03/06/2001 | US6197694 In situ method for cleaning silicon surface and forming layer thereon in same chamber |
| 03/06/2001 | US6197693 Methods for forming gate electrodes of semiconductor devices |
| 03/06/2001 | US6197692 Semiconductor wafer planarizing device and method for planarizing a surface of semiconductor wafer by polishing it |
| 03/06/2001 | US6197691 Shallow trench isolation process |
| 03/06/2001 | US6197690 Forming copper (cu) or cu alloy interconnection pattern comprising dense array of spaced apart cu or cu alloy lines bordering open dielectric filed on surface of wafer; chemically treating surface by double sided brush scrubbling |
| 03/06/2001 | US6197689 Semiconductor manufacture method with aluminum wiring layer patterning process |
| 03/06/2001 | US6197688 Interconnect structure in a semiconductor device and method of formation |
| 03/06/2001 | US6197687 Method of patterning field dielectric regions in a semiconductor device |
| 03/06/2001 | US6197686 Aluminum metallization by a barrier metal process |
| 03/06/2001 | US6197685 Method of producing multilayer wiring device with offset axises of upper and lower plugs |
| 03/06/2001 | US6197684 Method for forming metal/metal nitride layer |
| 03/06/2001 | US6197683 Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same |
| 03/06/2001 | US6197682 Structure of a contact hole in a semiconductor device and method of manufacturing the same |
| 03/06/2001 | US6197681 Forming copper interconnects in dielectric materials with low constant dielectrics |
| 03/06/2001 | US6197680 Method for forming conductive line |
| 03/06/2001 | US6197679 Semiconductor device and manufacturing method therefor |
| 03/06/2001 | US6197678 Damascene process |
| 03/06/2001 | US6197677 Method of depositing a silicon oxide layer on a semiconductor wafer |
| 03/06/2001 | US6197676 Method of forming metal lines |
| 03/06/2001 | US6197675 Manufacturing method for semiconductor device having contact holes of different structure |
| 03/06/2001 | US6197674 Loading silicon wafer into chamber, setting chamber at predetermined reduced-pressure atmosphere; introducing titanium chloride (ticl4), hydrogen, and argon gases into chamber; generating plasma to form titanium film in hole |
| 03/06/2001 | US6197673 Method of fabricating passivation of gate electrode |
| 03/06/2001 | US6197672 Method for forming polycide dual gate |
| 03/06/2001 | US6197671 Multiple finger polysilicon gate structure and method of making |
| 03/06/2001 | US6197670 Method for forming self-aligned contact |
| 03/06/2001 | US6197669 Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process |
| 03/06/2001 | US6197668 Ferroelectric-enhanced tantalum pentoxide for dielectric material applications in CMOS devices |
| 03/06/2001 | US6197667 Dipping composite semiconductor substrate into solution containing phosphorus pentasulphide/ammonia sulphide and drying with nitrogen; performing fluoride treatment and repeating procedure; performing ultraviolet ray treatment |
| 03/06/2001 | US6197666 Method for the fabrication of a doped silicon layer |
| 03/06/2001 | US6197665 Lamination machine and method to laminate a coverlay to a microelectronic package |
| 03/06/2001 | US6197663 Process for fabricating integrated circuit devices having thin film transistors |
| 03/06/2001 | US6197662 Semiconductor processing method of forming field isolation oxide using a polybuffered mask which includes a base nitride layer on the substrate, and other semiconductor processing methods |
| 03/06/2001 | US6197661 Semiconductor device with trench isolation structure and fabrication method thereof |
| 03/06/2001 | US6197660 Integration of CMP and wet or dry etching for STI |
| 03/06/2001 | US6197659 Divot free shallow trench isolation process |
| 03/06/2001 | US6197658 Providing silicon substrate having trench; filling trench by silicon oxide layer by ozone assisted thermal chemical vapor deposition; densifying gap filling silicon oxide by annealing in oxidizing atomsphere |
| 03/06/2001 | US6197657 Method for producing a semiconductor device |
| 03/06/2001 | US6197656 Method of forming planar isolation and substrate contacts in SIMOX-SOI. |
| 03/06/2001 | US6197655 Method for manufacturing integrated structures including removing a sacrificial region |
| 03/06/2001 | US6197654 Lightly positively doped silicon wafer anodization process |
| 03/06/2001 | US6197653 Capacitor and memory structure and method |
| 03/06/2001 | US6197652 Fabrication method of a twin-tub capacitor |
| 03/06/2001 | US6197651 Structure and method for forming a capacitor dielectric using yttrium barium copper oxide |
| 03/06/2001 | US6197650 Method for forming capacitor |
| 03/06/2001 | US6197649 Process for manufacturing planar fast recovery diode using reduced number of masking steps |
| 03/06/2001 | US6197648 Manufacturing method of MOSFET having salicide structure |