Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
11/2001
11/27/2001US6323080 Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry
11/27/2001US6323079 Method for manufacturing a semiconductor device
11/27/2001US6323078 Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby
11/27/2001US6323077 Inverse source/drain process using disposable sidewall spacer
11/27/2001US6323076 Integrated circuit having temporary conductive path structure and method for forming the same
11/27/2001US6323075 Method of fabricating semiconductor device
11/27/2001US6323073 Method for forming doped regions on an SOI device
11/27/2001US6323072 Method for forming semiconductor thin film
11/27/2001US6323071 Method for forming a semiconductor device
11/27/2001US6323070 Semiconductor device and its manufacturing method
11/27/2001US6323069 Method of manufacturing a thin film transistor using light irradiation to form impurity regions
11/27/2001US6323068 Liquid crystal display device integrated with driving circuit and method for fabricating the same
11/27/2001US6323064 Method for fabricating a memory card
11/27/2001US6323062 Wafer coating method for flip chips
11/27/2001US6323061 Method for manufacturing a semiconductor device
11/27/2001US6323058 Semiconductor device, tab tape for semiconductor device, method of manufacturing the tab tape and method of manufacturing the semiconductor device
11/27/2001US6323057 Method of producing a thin-film capacitor
11/27/2001US6323053 Growth of GaN on Si substrate using GaSe buffer layer
11/27/2001US6323051 Method of manufacturing liquid crystal display
11/27/2001US6323047 Method for monitoring second gate over-etch in a semiconductor device
11/27/2001US6323046 Method and apparatus for endpointing a chemical-mechanical planarization process
11/27/2001US6323045 Method and structure for top-to-bottom I/O nets repair in a thin film transfer and join process
11/27/2001US6323044 Method of forming capacitor having the lower metal electrode for preventing undesired defects at the surface of the metal plug
11/27/2001US6323034 Amorphous TFT process
11/27/2001US6322957 Light exposure method
11/27/2001US6322954 Etching the exposed portion of the layer of csg polysilicon, hsg polysilicon, polysilicon, monocrystalline silicon, or amorphous silicon with a liquid inorganic ammonia etchant solution in a temperature range of 20-30 degrees c.
11/27/2001US6322953 Exposing the first layer to light having a predetermined energy, developing that layer wherein a portion of the first layer remains within the trenches, and providing a second layer of photoresist over the developed first layer.
11/27/2001US6322948 Interpolymers containing units of acetals of fused rings such as norbornane and units from maleic anhydride and, optionally, (meth)acrylic acid
11/27/2001US6322943 Photoconductive layer comprising a non-single crystal material containing silicon atoms as a matrix and a surface layer carbon containing at least fluorine
11/27/2001US6322934 Designing a reticle including pattern features having a critical dimension to form corresponding circuit features based upon overlap areas defined by a plurality of exposure steps.
11/27/2001US6322903 Package of integrated circuits and vertical integration
11/27/2001US6322854 Used in the assembly of printed circuit boards and integrated circuit chips; dispensing system having a first conveyor track, a second conveyor track, and independently controlled dispensing heads disposed over the conveyor tracks
11/27/2001US6322849 Forming an integrated circuit portion including a thin film of ferroelectric metal oxide material and conducting an inert-gas recovery anneal by locating the portion in an unreactive gas atomsphere
11/27/2001US6322736 Method for fabricating molded microstructures on substrates
11/27/2001US6322716 Method for conditioning a plasma etch chamber
11/27/2001US6322715 Gas composition for dry etching and process of dry etching
11/27/2001US6322714 Process for etching silicon-containing material on substrates
11/27/2001US6322713 Nanoscale conductive connectors and method for making same
11/27/2001US6322711 Method for fabrication of thin film resistor
11/27/2001US6322678 Electroplating reactor including back-side electrical contact apparatus
11/27/2001US6322677 Lift and rotate assembly for use in a workpiece processing station and a method of attaching the same
11/27/2001US6322672 Method and apparatus for milling copper interconnects in a charged particle beam system
11/27/2001US6322662 Plasma treatment system
11/27/2001US6322661 Method and apparatus for controlling the volume of a plasma
11/27/2001US6322659 System and method for dual head bonding
11/27/2001US6322634 Shallow trench isolation structure without corner exposure
11/27/2001US6322633 Wafer container cleaning system
11/27/2001US6322631 Heat treatment method and its apparatus
11/27/2001US6322626 Apparatus for controlling a temperature of a microelectronics substrate
11/27/2001US6322625 Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
11/27/2001US6322600 Planarization compositions and methods for removing interlayer dielectric films
11/27/2001US6322598 Semiconductor processing system for processing discrete pieces of substrate to form electronic devices
11/27/2001US6322597 Semiconductor fabrication line with contamination preventing function
11/27/2001US6322434 Polishing apparatus including attitude controller for dressing apparatus
11/27/2001US6322427 Conditioning fixed abrasive articles
11/27/2001US6322425 Colloidal polishing of fused silica
11/27/2001US6322313 Apparatus and method for inserting a wafer, substrate or other article into a process module
11/27/2001US6322312 Mechanical gripper for wafer handling robots
11/27/2001US6322119 Robots for microelectronic workpiece handling
11/27/2001US6322116 Non-contact end effector
11/27/2001US6322060 Anti-vibration apparatus, exposure apparatus using the same, device manufacturing method, and anti-vibration method
11/27/2001US6322009 Common nozzle for resist development
11/27/2001US6321976 Method of wire bonding for small clearance
11/27/2001US6321973 Bump joining method
11/27/2001US6321972 Apparatus and method for filling a ball grid array
11/27/2001US6321971 Die collet for a semiconductor chip and apparatus for bonding semiconductor chip to a lead frame
11/27/2001US6321970 Wire bonding machine
11/27/2001US6321969 Efficient energy transfer capillary
11/27/2001US6321898 Display panel transporting apparatus and a display panel transporting unit
11/27/2001US6321739 Film frame substrate fixture
11/27/2001US6321734 Resin sealed electronic device and method of fabricating the same and ignition coil for internal combustion engine using the same
11/27/2001US6321681 Method and apparatus to produce large inductive plasma for plasma processing
11/27/2001US6321680 Vertical plasma enhanced process apparatus and method
11/27/2001US6321463 Substrate treating apparatus and method of operating the same
11/27/2001US6321452 Method for manufacturing the heat pipe integrated into the heat sink
11/27/2001CA2249079C Reactor for generation of moisture
11/27/2001CA2201083C Hollow package manufacturing method and apparatus
11/27/2001CA2171458C Multi-chip module
11/25/2001CA2349156A1 Electroplating method using combination of vibrational flow in plating bath and plating current of pulse
11/22/2001WO2001089268A1 Method and structure for producing flat wafer chucks
11/22/2001WO2001089091A2 Method and apparatus for incorporating a multiplier into an fpga
11/22/2001WO2001089006A1 Encapsulated microelectronic devices
11/22/2001WO2001088999A1 Method for manufacturing high efficiency photovoltaic devices at enhanced deposition rates
11/22/2001WO2001088998A2 Etching process for making electrodes
11/22/2001WO2001088997A2 Trench-gate semiconductor device and method of making the same
11/22/2001WO2001088996A1 Field effect transistor and method for producing a field effect transistor
11/22/2001WO2001088995A1 Charge carrier extracting transistor
11/22/2001WO2001088994A1 Semiconductor device and method of manufacture thereof
11/22/2001WO2001088993A2 A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES
11/22/2001WO2001088992A2 Semiconductor power component
11/22/2001WO2001088991A2 Polysilicon sidewall with silicide formation to produce high performance mosfets
11/22/2001WO2001088987A2 Staggered bitline strapping of a non-volatile memory cell
11/22/2001WO2001088986A2 Staggered bitline strapping of a non-volatile memory cell
11/22/2001WO2001088985A2 Uniform bitline strapping of a non-volatile memory cell
11/22/2001WO2001088984A1 Vertical transistor
11/22/2001WO2001088981A1 Planarised semiconductor structure including a conductive fuse and process for fabrication thereof
11/22/2001WO2001088977A2 Method and device for array threshold voltage control by trapped charge in trench isolation
11/22/2001WO2001088976A2 Wireless radio frequency testing methode of integrated circuits and wafers
11/22/2001WO2001088975A2 Method for producing a component
11/22/2001WO2001088974A1 Adjusting defect profiles in crystal or crystalline structures
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