Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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12/04/2001 | US6326693 Semiconductor integrated circuit device |
12/04/2001 | US6326692 Insulating and capping structure with preservation of the low dielectric constant of the insulating layer |
12/04/2001 | US6326690 Method of titanium/titanium nitride integration |
12/04/2001 | US6326681 Semiconductor device |
12/04/2001 | US6326676 Semiconductor device |
12/04/2001 | US6326675 Semiconductor device with transparent link area for silicide applications and fabrication thereof |
12/04/2001 | US6326674 Integrated injection logic devices including injection regions and tub or sink regions |
12/04/2001 | US6326673 Method and structure of manufacturing a high-Q inductor with an air trench |
12/04/2001 | US6326672 LOCOS fabrication processes and semiconductive material structures |
12/04/2001 | US6326671 Semiconductor memory device and method for manufacturing the same |
12/04/2001 | US6326670 Semiconductor device and method for manufacturing the same |
12/04/2001 | US6326669 Semiconductor device and method of making the same |
12/04/2001 | US6326668 Semiconductor structure including metal nitride and metal silicide |
12/04/2001 | US6326667 Semiconductor devices and methods for producing semiconductor devices |
12/04/2001 | US6326665 Semiconductor device with insulating films |
12/04/2001 | US6326664 Transistor with ultra shallow tip and method of fabrication |
12/04/2001 | US6326663 Avalanche injection EEPROM memory cell with P-type control gate |
12/04/2001 | US6326662 Split gate flash memory device with source line |
12/04/2001 | US6326661 Semiconductor device |
12/04/2001 | US6326660 Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flash |
12/04/2001 | US6326659 Semiconductor memory and method of manufacturing same |
12/04/2001 | US6326658 Semiconductor device including an interface layer containing chlorine |
12/04/2001 | US6326657 Semiconductor device having both memory and logic circuit and its manufacture |
12/04/2001 | US6326651 Field-programmable gate array with ferroelectric thin film |
12/04/2001 | US6326642 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
12/04/2001 | US6326637 Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device |
12/04/2001 | US6326635 Minimization of electron fogging in electron beam lithography |
12/04/2001 | US6326632 Particle-optical imaging system for lithography purposes |
12/04/2001 | US6326631 Ion implantation device arranged to select neutral ions from the ion beam |
12/04/2001 | US6326630 Ion implanter |
12/04/2001 | US6326629 Projection lithography device utilizing charged particles |
12/04/2001 | US6326614 SMIF box cover hold down latch and box door latch actuating mechanism |
12/04/2001 | US6326601 Optical barrier |
12/04/2001 | US6326597 Temperature control system for process chamber |
12/04/2001 | US6326574 Sleeve for an adapter flange of the gasonics L3510 etcher |
12/04/2001 | US6326561 Thin-film multilayer wiring board with wiring and via holes in a thickness of an insulating layer |
12/04/2001 | US6326544 Polymer based circuit |
12/04/2001 | US6326505 Methods, complexes, and system for forming metal-containing films |
12/04/2001 | US6326322 Method for depositing a silicon nitride layer |
12/04/2001 | US6326321 Methods of forming a layer of silicon nitride in semiconductor fabrication processes |
12/04/2001 | US6326320 Method for forming oxide layer on conductor plug of trench structure |
12/04/2001 | US6326319 Method for coating ultra-thin resist films |
12/04/2001 | US6326318 Process for producing semiconductor devices including an insulating layer with an impurity |
12/04/2001 | US6326317 Method for fabricating metal oxide semiconductor field effect transistor (MOSFET) |
12/04/2001 | US6326316 Method of manufacturing semiconductor devices |
12/04/2001 | US6326315 Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same |
12/04/2001 | US6326314 Integrated inductor with filled etch |
12/04/2001 | US6326313 Method and apparatus for partial drain during a nitride strip process step |
12/04/2001 | US6326312 Contact hole of semiconductor and its forming method |
12/04/2001 | US6326311 Microstructure producing method capable of controlling growth position of minute particle or thin and semiconductor device employing the microstructure |
12/04/2001 | US6326310 Method and system for providing shallow trench profile shaping through spacer and etching |
12/04/2001 | US6326309 Semiconductor device manufacturing method |
12/04/2001 | US6326308 Method for manufacturing semiconductor storage element |
12/04/2001 | US6326307 Plasma pretreatment of photoresist in an oxide etch process |
12/04/2001 | US6326306 Method of forming copper dual damascene structure |
12/04/2001 | US6326305 Controlling candida, cryptococcus, aspergillus infections |
12/04/2001 | US6326303 Copper electroless deposition on a titanium-containing surface |
12/04/2001 | US6326302 Process for the anisotropic etching of an organic dielectric polymer material by a plasma gas and application in microelectronics |
12/04/2001 | US6326301 Method for forming a dual inlaid copper interconnect structure |
12/04/2001 | US6326300 Dual damascene patterned conductor layer formation method |
12/04/2001 | US6326299 Method for manufacturing a semiconductor device |
12/04/2001 | US6326297 Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer |
12/04/2001 | US6326296 Method of forming dual damascene structure with improved contact/via edge integrity |
12/04/2001 | US6326295 Method and structure for improved alignment tolerance in multiple, singulated plugs and interconnection |
12/04/2001 | US6326294 Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices |
12/04/2001 | US6326293 Formation of recessed polysilicon plugs using chemical-mechanical-polishing (CMP) and selective oxidation |
12/04/2001 | US6326292 Semiconductor component and manufacturing method for semiconductor component |
12/04/2001 | US6326291 Fabrication of a wide metal silicide on a narrow polysilicon gate structure |
12/04/2001 | US6326290 Low resistance self aligned extended gate structure utilizing A T or Y shaped gate structure for high performance deep submicron FET |
12/04/2001 | US6326289 Method of forming a silicide layer using a pre-amorphization implant which is blocked from source/drain regions by a layer of photoresist |
12/04/2001 | US6326288 CMOS compatible SOI process |
12/04/2001 | US6326287 Semiconductor device and method of fabricating the same |
12/04/2001 | US6326286 Method for crystallizing amorphous silicon layer |
12/04/2001 | US6326285 Simultaneous multiple silicon on insulator (SOI) wafer production |
12/04/2001 | US6326284 Semiconductor device and production thereof |
12/04/2001 | US6326283 Trench-diffusion corner rounding in a shallow-trench (STI) process |
12/04/2001 | US6326282 Method of forming trench isolation in a semiconductor device and structure formed thereby |
12/04/2001 | US6326281 Integrated circuit isolation |
12/04/2001 | US6326280 Thin film semiconductor and method for making thin film semiconductor |
12/04/2001 | US6326279 Process for producing semiconductor article |
12/04/2001 | US6326278 Method of protecting an alignment mark when manufacturing a semiconductor device |
12/04/2001 | US6326277 Methods of forming recessed hemispherical grain silicon capacitor structures |
12/04/2001 | US6326276 Method for forming a capacitor in dram |
12/04/2001 | US6326275 DRAM cell with vertical CMOS transistor |
12/04/2001 | US6326274 Method for improving performance and reliability of MOS technologies and data retention characteristics of flash memory cells |
12/04/2001 | US6326273 Method of fabricating a field effect transistor with trapezoidal shaped gate dielectric and/or gate electrode |
12/04/2001 | US6326272 Method for forming self-aligned elevated transistor |
12/04/2001 | US6326271 Asymmetric MOS technology power device |
12/04/2001 | US6326270 Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines |
12/04/2001 | US6326269 Method of fabricating self-aligned multilevel mask ROM |
12/04/2001 | US6326268 Method of fabricating a MONOS flash cell using shallow trench isolation |
12/04/2001 | US6326267 Method of forming non-volatile semiconductor memory |
12/04/2001 | US6326266 Method of manufacturing an EPROM memory device having memory cells organized in a tablecloth matrix |
12/04/2001 | US6326265 Device with embedded flash and EEPROM memories |
12/04/2001 | US6326264 Semiconductor device and method for manufacturing same |
12/04/2001 | US6326263 Method of fabricating a flash memory cell |
12/04/2001 | US6326262 Method for fabricating epitaxy layer |
12/04/2001 | US6326261 Method of fabricating a deep trench capacitor |
12/04/2001 | US6326260 Gate prespacers for high density, high performance DRAMs |
12/04/2001 | US6326259 Method of manufacturing a capacitor in a semiconductor device |