Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2002
01/31/2002US20020011598 Semiconductor device using a semiconductor film having substantially no grain boundary
01/31/2002US20020011597 Light emitting device
01/31/2002US20020011574 Charged beam exposure apparatus having blanking aperture and basic figure aperture
01/31/2002US20020011573 Lithographic apparatus, device manufacturing method, and device manufactured thereby
01/31/2002US20020011553 Active matrix display device and method of manufacturing the same
01/31/2002US20020011479 Heating apparatus for bump bonding, bump bonding method and bump forming apparatus, and semiconductor wafer
01/31/2002US20020011478 Hot wall rapid thermal processor
01/31/2002US20020011465 Etching metal oxide film by supplying first etching gas to film to remove metallic element from film, supplying second etching gas to film to remove secong metallic element
01/31/2002US20020011464 Method of plasma etching
01/31/2002US20020011463 Isotropic dry cleaning process for noble metal integrated circuit structures
01/31/2002US20020011462 Anisotropically dry etching organic antireflection layer with etching gas containing hydrogen and nitrogen
01/31/2002US20020011461 Method of structuring a metal-containing layer
01/31/2002US20020011421 Reactive ion etching of an article having polymeric surface layer and metallic features by exposing to plasma reactive with the polymer while applying voltage adjacent to metallic features; semiconductors
01/31/2002US20020011417 Method and apparatus for plating and polishing a semiconductor substrate
01/31/2002US20020011416 Plating solution is mixture od copper salt and polyether
01/31/2002US20020011415 Positioning electroconductive substrate in a chamber containing electrochemical bath, applying a plating bias to the substrate while immersing into bath, and depositing third conductive material in situ to fill; pulsation
01/31/2002US20020011407 Inactive gas is passed in a chamber that is under a reduced pressure; after the chamber is set to a specified pressure, the inactive gas is switched to an active gas and plasma is generated in the active gas; etching of semiconductor wafers
01/31/2002US20020011351 Printed-wiring substrate and method for fabricating the same
01/31/2002US20020011348 Flexible wiring boards and processes for producing flexible wiring board
01/31/2002US20020011313 Single-point bonding apparatus
01/31/2002US20020011310 Downstream sapphire elbow joint for remote plasma generator
01/31/2002US20020011257 Holding the substrate in tank; and filling said tank with a gas mixture comprising water, ozone and an additive acting as a scavenger; useful cleaning sequences or cleaning after VIA etching and other etch processes.
01/31/2002US20020011256 Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid.
01/31/2002US20020011255 Method for post chemical-mechanical planarization cleaning of semiconductor wafers
01/31/2002US20020011254 Methods for cleaning microelectronic substrates using ultradilute cleaning liquids
01/31/2002US20020011253 Methods for cleaning microelectronic substrates using ultradilute cleaning liquids
01/31/2002US20020011216 Integral susceptor-wall reactor system and method
01/31/2002US20020011214 Remote plasma mixer
01/31/2002US20020011211 Barrier coating for vitreous materials
01/31/2002US20020011210 Semiconductor-processing device provided with a remote plasma source for self-cleaning
01/31/2002US20020011208 Substrate processing apparatus
01/31/2002US20020011207 Exposure apparatus, coating/developing system, device manufacturing system, device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
01/31/2002US20020011203 Multi wafer introduction/single wafer conveyor mode processing system and method of processing wafers using the same
01/31/2002US20020011031 Inorganic abrasive and organic particles with anionic group, wherein the removal rate for silicon oxide film is at least 5 times the removal rate for silicon nitride film; used for a shallow trench isolation in semiconductor manufacturing
01/31/2002DE10134163A1 New copolymers, used in photoresist composition for producing resist image, contain recurring units derived from unsaturated carboxylic anhydride, allyltrimethylsilane and 2-alkyl-adamant-2-yl (meth)acrylate
01/31/2002DE10130626A1 Semiconductor storage element comprises semiconductor substrate, intermediate insulating layer, connection formed in insulating layer, lower electrode, dielectric layer formed on lower electrode, and upper electrode
01/31/2002DE10130129A1 Zerstäubungsvorrichtung Sputtering
01/31/2002DE10122678A1 Mask data correction device with graphic correction stage generates transfer mask pattern shape for use in manufacturing process so as to prevent faults anticipated during manufacture
01/31/2002DE10109199A1 Verkleinerung eines Chipmontagesystems Reduction of a chip assembly system
01/31/2002DE10104780A1 Verfahren zur Herstellung eines Steckkontakts in einem Halbleiterbauelement A process for the preparation of a plug contact in a semiconductor device
01/31/2002DE10063622A1 Verfahren zur Herstellung von Halbleitervorrichtungen und Halbleitervorrichtung A process for the production of semiconductor devices and the semiconductor device
01/31/2002DE10060628A1 Rapid thermal process reactor used in production of integrated circuits comprises heat sources arranged in reactor block, chamber for substrate between the heat sources, and upper exchange plate
01/31/2002DE10057647A1 Gehäusestruktur für CCD-Chip Housing structure for CCD chip
01/31/2002DE10046893A1 Double-sided polishing involves flattening upper and lower polishing pads using plates with grinding bodies or grinding paper at least once after pads are stuck to polishing plates
01/31/2002DE10044540C1 Forming conducting coatings on substrate through hole walls involves applying covering coating on one side, coating with electrically conducting material, removing covering coating
01/31/2002DE10036690A1 Double-sided polishing method for semiconductor wafers by simultaneously polishing at least twelve wafers
01/31/2002DE10034942A1 Verfahren zur Erzeugung eines dotierten Halbleitersubstrats A method for producing a doped semiconductor substrate
01/31/2002DE10034263A1 Production of a quasi substrate used in the production of a laser diode comprises forming an intermediate layer made of a group III nitride doped with oxygen between a utilizing layer based on gallium nitride and a sapphire base substrate
01/31/2002DE10034085A1 Verfahren zur Erzeugung analog zueinander aufgebauter Chips, die jeweils ein erstes Halbleiterbauelement, das eine Schicht mit einer definierten elektrischen Polarisation aufweist, aufweisen A method of generating analog to each other constructed chips, each having a first semiconductor component having a layer with a defined electrical polarization,
01/31/2002DE10032465A1 Verfahren und Vorrichtung zum thermischen Behandeln von Objekten Method and apparatus for thermal treatment of objects
01/31/2002DE10010016C1 Vorrichtung und Verfahren zur plasmagestützten Oberflächenbehandlung von Substraten im Vakuum Apparatus and method for plasma-enhanced surface treatment of substrates in vacuum
01/30/2002EP1176647A2 Method of depositing aluminium-lithium alloy cathode in organic light emitting devices
01/30/2002EP1176644A1 Method to activate CdTe thin film solar cells
01/30/2002EP1176643A2 MOS power semiconductor device having a trench gate and method of making the same
01/30/2002EP1176641A2 Front-and-back electrically conductive substrate and method for manufacturing same
01/30/2002EP1176640A2 Contact structure of an integrated power circuit
01/30/2002EP1176639A1 Method for contacting a semiconductor chip
01/30/2002EP1176638A2 Semiconductor device and packaging method thereof
01/30/2002EP1176636A2 System for manufacturing a thin-film transistor, method of manufacturing a thin-film transistor, method of evaluationg polysilicon, and apparatus for inspecting polysilicon
01/30/2002EP1176634A2 Method of anisotropic dry etching organic antireflection layers
01/30/2002EP1176633A2 Surface treatment solution for polysilicon film and method of treating the surface of polysilicon film using the same
01/30/2002EP1176632A1 Process for chemical treatment of semiconductor wafers
01/30/2002EP1176631A1 Method and apparatus for monitoring polishing state, polishing device, process wafer, semiconductor device, and method of manufacturing semiconductor device
01/30/2002EP1176629A2 Method of and apparatus for heating a substrate
01/30/2002EP1176628A2 On-the-fly center finding and notch aligning for wafer
01/30/2002EP1176625A2 Sputtering apparatus
01/30/2002EP1176624A2 Method and system for microwave excitation of plasma in an ion beam guide
01/30/2002EP1176623A2 Waveguide for microwave excitation of plasma in an ion beam guide
01/30/2002EP1176608A2 Nonvolatile semiconductor storage device and test method therefor
01/30/2002EP1176605A2 Integrated memory with magnetoresistive memory cells
01/30/2002EP1176602A1 Flash EPROM integrated circuit architecture
01/30/2002EP1176600A1 Method and device for noiselesss reading of memory cells of a MRAM memory
01/30/2002EP1176466A1 Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it
01/30/2002EP1176231A2 A boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same
01/30/2002EP1176226A1 Method of deposition of silicon carbide film in integrated circuit fabrication
01/30/2002EP1175970A2 Method and apparatus for calibrating a robot
01/30/2002EP1175965A2 Polishing tool, manufacturing method therefor, polishing apparatus for polishing a semiconductor wafer and method of polishing a substrate
01/30/2002EP1175964A2 Polishing surface temperature conditioning system for a chemical mechanical planarization process
01/30/2002EP1175933A1 Gas separation apparatus
01/30/2002EP1175701A1 Memory cell arrangement and method for producing same
01/30/2002EP1175699A1 An integrated circuit with shallow trench isolation and fabrication process
01/30/2002EP1175698A1 Uv-supported activation of a doping agent in compound semiconductors by means of rtp systems
01/30/2002EP1175697A1 Contact bump with support metallization and method of producing said support metallization
01/30/2002EP1175696A2 Method for generating defects in a grid support of a semiconductor material
01/30/2002EP1175694A2 Semiconductor devices with selectively doped iii-v nitride layers
01/30/2002EP1175680A1 Ramped or stepped gate channel erase for flash memory application
01/30/2002EP1175628A1 Accelerometer transducer used for seismic recording
01/30/2002EP1175624A1 Integrated circuit with test interface
01/30/2002EP1175604A1 System and process for calibrating pyrometers in thermal processing chambers
01/30/2002EP1175290A1 Method for manufacturing encapsulated electronical components
01/30/2002EP1175275A1 Method for producing weld points on a substrate and guide for implementing said method
01/30/2002EP1151365A4 Rapid on chip voltage generation for low power integrated circuits
01/30/2002EP1149385A4 Ic test software system for mapping logical functional test data of logic integrated circuits to physical representation
01/30/2002EP1091811A4 Selective treatment of the surface of a microelectronic workpiece
01/30/2002EP0898787A4 Current controlled oscillator with voltage independent capacitance
01/30/2002EP0895607B1 Anti-vibration stabilizer for a portable emission microscope
01/30/2002EP0648373B1 Microwave energized deposition process with substrate temperature control
01/30/2002EP0627631B1 Analog autonomous test bus framework for testing integrated circuits on a printed circuit board
01/30/2002EP0616334B1 Non-volatile semiconductor memory device having floating gate
01/30/2002CN1333923A Field effect-controlled transistor and method for producing the same