Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
01/2002
01/31/2002WO2001047009A3 Method and apparatus for detecting the endpoint of a photoresist stripping process
01/31/2002WO2001047003A3 Methods and apparatus for forming submicron patterns on films
01/31/2002WO2001043198A3 Source/drain-on-insulator (s/doi) field effect transistor using silicon nitride and silicon oxide and method of fabrication
01/31/2002WO2001041544B1 Deposition of gate stacks including silicon germanium layers
01/31/2002WO2001033630A3 Methods and compositions for detection and treatment of breast cancer, based on breast cancer-associated polypeptides
01/31/2002WO2001020656A3 Dmos transistor having a trench gate electrode and method of making the same
01/31/2002WO2000074117A9 Rapid heating and cooling of workpiece chucks
01/31/2002WO2000074114A9 Disk cascade scrubber
01/31/2002WO2000019481A9 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate
01/31/2002WO2000008691A9 Zinc oxide films containing p-type dopant and process for preparing same
01/31/2002WO1999066545A9 Process for removing oxide using hydrogen fluoride vapor
01/31/2002US20020013930 Method and system for producing semiconductor devices
01/31/2002US20020013913 Placement and routing method for clock distribution circuit, clock distribution circuit manufacturing method, semiconductor device manufacturing method, clock distribution circuit and semiconductor device
01/31/2002US20020013908 Remote diagnostic system for facilities and remote diagnostic method
01/31/2002US20020013688 Back annotation apparatus for carrying out a simulation based on the extraction result in regard to parasitic elements
01/31/2002US20020013682 Method and system for improving a transistor model
01/31/2002US20020013665 Method and system for calculating kill ratio, degree of contribution to yield by defect specie, and yield of final products, and computer program for implementing calculation of kill ratio
01/31/2002US20020013637 Method and apparatus for monitoring and/or end point detecting a process
01/31/2002US20020013632 Production system for manufacturing semiconductor devices by lot
01/31/2002US20020013487 Using organometallic compound; vapor deposition
01/31/2002US20020013448 Novel monomers, polymers, methods of synthesis thereof and photoresist compositions
01/31/2002US20020013443 Polybenzoxazole and crosslinking agent
01/31/2002US20020013420 Polyepoxides; electronic packages
01/31/2002US20020013240 Composition and method for removing resist and etching residues using hydroxylammonium carboxylates
01/31/2002US20020013239 Polymer remover
01/31/2002US20020013238 A semiconductor wafer cleaning formulation, including organic amine, water, 1,3-dicarbonyl compound chelating agent, nitrogen containing carboxylic acid or an imine, and 2-98% wt polar organic solvent; used in removing the inorganic residue
01/31/2002US20020013120 Method and apparatus for optical monitoring in chemical mechanical polishing
01/31/2002US20020013114 Semiconductor device and method of manufacturing the same
01/31/2002US20020013071 Final testing of IC die in wafer form
01/31/2002US20020013069 Reticle chuck in exposure apparatus and semiconductor device manufacturing method using the same
01/31/2002US20020013068 Vapor deposition using diluent gas
01/31/2002US20020013067 Semiconductor device manufacturing method
01/31/2002US20020013066 Semiconductor device and semiconductor device manufacturing method
01/31/2002US20020013065 Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
01/31/2002US20020013063 Wet treatment, dry treatment
01/31/2002US20020013062 Etching silicon oxide doped with fluorine with hydrogen fluoride; forming hollow structures in semiconductor
01/31/2002US20020013061 Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
01/31/2002US20020013060 Semiconductor device and method of manufacturing the same
01/31/2002US20020013059 Pattern formation material and pattern formation method
01/31/2002US20020013057 Method of embedding contact hole by damascene method
01/31/2002US20020013055 Method of manufacturing semiconductor device
01/31/2002US20020013052 Methods for preparing ruthenium metal films
01/31/2002US20020013051 CVD of tantalum and tantalum nitride films from tantalum halide precursors
01/31/2002US20020013050 Chemistry for chemical vapor deposition of titanium containing films
01/31/2002US20020013049 Process for forming a conducting structure layer that can reduce metal etching residue
01/31/2002US20020013047 Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry
01/31/2002US20020013046 Multilayer dielectric
01/31/2002US20020013045 Multilayer connector
01/31/2002US20020013044 HDP liner layer prior to HSQ/SOG deposition to reduce the amount of HSQ/SOG over the metal lead
01/31/2002US20020013043 Semiconductor integrated circuit device and manufacturing method of that
01/31/2002US20020013042 Defect filter layer
01/31/2002US20020013041 Process control; controlling temperature
01/31/2002US20020013039 Method of fabrication of semiconductor structures by ion implantation
01/31/2002US20020013038 Semiconductor device and production thereof
01/31/2002US20020013037 Two-dimensionally arrayed quantum device
01/31/2002US20020013036 Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby
01/31/2002US20020013035 Method of manufacturing a semiconductor device
01/31/2002US20020013034 Multilayer; dielectric layer on semiconductor substrate; coils air gap
01/31/2002US20020013033 Semiconductor integrated circuit having an integrated resistance region
01/31/2002US20020013032 Process to fabricate a novel source-drain extension
01/31/2002US20020013031 Method of improving the reliability of gate oxide layer
01/31/2002US20020013029 High voltage device having polysilicon region in trench and fabricating method thereof
01/31/2002US20020013028 Method of forming flash memory, method of forming flash memory and sram circuitry, and etching methods
01/31/2002US20020013027 Semiconductor memory device having a plug contacted to a capacitor electrode and method for fabricating the capacitor
01/31/2002US20020013026 Semiconductor device and method for manufacturing the same
01/31/2002US20020013025 Method for fabricating bipolar transistors
01/31/2002US20020013024 Multilayer damascene structure
01/31/2002US20020013022 Method of manufacturing a semiconductor device
01/31/2002US20020013021 Composition for wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
01/31/2002US20020013020 Thin film transistor array substrate for liquid crystal display and method of fabricating the same
01/31/2002US20020013016 Method for fabricating semiconductor device
01/31/2002US20020013015 Method of manufacturing a semiconductor device
01/31/2002US20020013014 Method and structure for manufacturing improved yield semiconductor packaged devices
01/31/2002US20020013012 Semiconductor chip, semiconductor wafer, semiconductor device and method of manufacturing the semiconductor device
01/31/2002US20020013011 Methods for making electrooptical device and driving substrate therefor
01/31/2002US20020013010 Contactor having conductive particles in a hole as a contact electrode
01/31/2002US20020013009 Failure analysis method for chip of ball grid array type semiconductor
01/31/2002US20020013008 Method of mounting chips
01/31/2002US20020013007 Semiconductor wafer polishing end point detection method and apparatus
01/31/2002US20020013006 Semiconductor memory and method of manufacturing the same
01/31/2002US20020013005 Inductor for semiconductor device and method of making the same
01/31/2002US20020012883 Overcoating polysilicon layer with photoresist and gate electrode
01/31/2002US20020012882 Method of manufacturing semiconductor device with improved removal of resist residues
01/31/2002US20020012876 Lithography structure
01/31/2002US20020012875 Antireflective coating compositions comprising photoacid generators
01/31/2002US20020012874 Photoresist composition
01/31/2002US20020012873 Photoresist composition containing photo radical generator with photoacid generator
01/31/2002US20020012872 Photopolymerization
01/31/2002US20020012870 Pattern formation material and pattern formation method
01/31/2002US20020012869 Lithography; amplification
01/31/2002US20020012867 Forming pattern; exposure to light
01/31/2002US20020012865 Mixture of alkali soluble polymer and photosensitizers
01/31/2002US20020012860 Method and apparatus for emission lithography using patterned emitter
01/31/2002US20020012859 Using both light beam exposure pattern and electron beam pattern
01/31/2002US20020012853 Electron beam writing pattern; transfer pattern high resolution
01/31/2002US20020012852 Stencil mask for electron beam projection lithography and fabrication method
01/31/2002US20020012851 Exposure of a photoresist coated semiconductor to three different intensity of light
01/31/2002US20020012809 Smokeless
01/31/2002US20020012745 Flash memory and methods of writing and erasing the same as well as a method of forming the same
01/31/2002US20020012744 Re-coating MEMS devices using dissolved resins