| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 02/12/2002 | US6346479 Creating aperture in dielectric layer; electrodepositing copper from plating solution designed for non-conformal filling; conformal filling; planarization |
| 02/12/2002 | US6346478 Method of forming a copper wiring in a semiconductor device |
| 02/12/2002 | US6346477 Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt |
| 02/12/2002 | US6346476 Method for enhancing line-to-line capacitance uniformity of plasma enhanced chemical vapor deposited (PECVD) inter-metal dielectric (IMD) layers |
| 02/12/2002 | US6346475 Method of manufacturing semiconductor integrated circuit |
| 02/12/2002 | US6346474 Dual damascene process |
| 02/12/2002 | US6346473 Methods for fabricating microelectronic device interconnects with spun-on glass regions |
| 02/12/2002 | US6346472 Manufacturing method for semiconductor metalization barrier |
| 02/12/2002 | US6346471 Multilayer wiring structure and semiconductor device having the same, and manufacturing method therefor |
| 02/12/2002 | US6346470 Method for reducing electromigration in semiconductor interconnect lines |
| 02/12/2002 | US6346469 Semiconductor device and a process for forming the semiconductor device |
| 02/12/2002 | US6346468 Method for forming an L-shaped spacer using a disposable polysilicon spacer |
| 02/12/2002 | US6346467 Method of making tungsten gate MOS transistor and memory cell by encapsulating |
| 02/12/2002 | US6346466 Planarization of a polysilicon layer surface by chemical mechanical polish to improve lithography and silicide formation |
| 02/12/2002 | US6346465 Semiconductor device with silicide contact structure and fabrication method thereof |
| 02/12/2002 | US6346464 Manufacturing method of semiconductor device |
| 02/12/2002 | US6346463 Method for forming a semiconductor device with a tailored well profile |
| 02/12/2002 | US6346462 Method of fabricating a thin film transistor |
| 02/12/2002 | US6346461 Electroless epitaxial etching for semiconductor applications |
| 02/12/2002 | US6346460 Low cost silicon substrate with impurity gettering and latch up protection and method of manufacture |
| 02/12/2002 | US6346459 Process for lift off and transfer of semiconductor devices onto an alien substrate |
| 02/12/2002 | US6346458 Transposed split of ion cut materials |
| 02/12/2002 | US6346457 Process for manufacturing semiconductor device |
| 02/12/2002 | US6346456 Method of improving alignment for semiconductor fabrication |
| 02/12/2002 | US6346455 Method to form a corrugated structure for enhanced capacitance |
| 02/12/2002 | US6346454 Method of making dual damascene interconnect structure and metal electrode capacitor |
| 02/12/2002 | US6346453 Planarizing polycrystalline silicon layer to expose mesa; etching to expose |
| 02/12/2002 | US6346452 Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers |
| 02/12/2002 | US6346451 Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode |
| 02/12/2002 | US6346450 Process for manufacturing MIS transistor with self-aligned metal grid |
| 02/12/2002 | US6346449 Non-distort spacer profile during subsequent processing |
| 02/12/2002 | US6346448 Method of manufacturing a semiconductor device |
| 02/12/2002 | US6346447 Shallow-implant elevated source/drain doping from a sidewall dopant source |
| 02/12/2002 | US6346446 Methods of forming features of integrated circuits using modified buried layers |
| 02/12/2002 | US6346445 Method for fabricating semiconductor devices with dual gate oxides |
| 02/12/2002 | US6346444 Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof |
| 02/12/2002 | US6346443 Non-volatile semiconductor memory device |
| 02/12/2002 | US6346442 Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array |
| 02/12/2002 | US6346441 Method of fabricating flash memory cell using two tilt implantation steps |
| 02/12/2002 | US6346440 Semiconductor memory device and method for the manufacture thereof |
| 02/12/2002 | US6346439 Semiconductor transistor devices and methods for forming semiconductor transistor devices |
| 02/12/2002 | US6346438 Method of manufacturing a semiconductor device |
| 02/12/2002 | US6346437 Single crystal TFT from continuous transition metal delivery method |
| 02/12/2002 | US6346436 Quantum thin line producing method and semiconductor device |
| 02/12/2002 | US6346435 Laminated substrate fabricated from semiconductor wafers bonded to each other without contact between insulating layer and semiconductor layer and process of fabrication thereof |
| 02/12/2002 | US6346434 Semiconductor device and manufacturing method |
| 02/12/2002 | US6346433 Method of coating semiconductor wafer with resin and mold used therefor |
| 02/12/2002 | US6346432 Semiconductor element having external connection terminals, method of manufacturing the semiconductor element, and semiconductor device equipped with the semiconductor element |
| 02/12/2002 | US6346428 Method and apparatus for minimizing semiconductor wafer arcing during semiconductor wafer processing |
| 02/12/2002 | US6346427 Parameter adjustment in a MOS integrated circuit |
| 02/12/2002 | US6346426 Method and apparatus for characterizing semiconductor device performance variations based on independent critical dimension measurements |
| 02/12/2002 | US6346425 Vapor-phase processing method capable of eliminating particle formation |
| 02/12/2002 | US6346424 Process for producing high-epsilon dielectric layer or ferroelectric layer |
| 02/12/2002 | US6346366 Method for making an advanced guard ring for stacked film using a novel mask design |
| 02/12/2002 | US6346362 Grafted with organosilicon,-germanium, or -tin compound and having protective group; resistance to reactive ion etching; photoresists |
| 02/12/2002 | US6346354 Dividing a region to-be-exposed into smaller regions; shifting coordinates; computing optimum dose; accurate correction |
| 02/12/2002 | US6346352 Quartz defect removal utilizing gallium staining and femtosecond ablation |
| 02/12/2002 | US6346317 Substrate for ceramic sheets |
| 02/12/2002 | US6346302 Silica film on silicon |
| 02/12/2002 | US6346202 Finishing with partial organic boundary layer |
| 02/12/2002 | US6346152 Method and apparatus for applying adhesives to a lead frame |
| 02/12/2002 | US6346151 Method and apparatus for electroless plating a contact pad |
| 02/12/2002 | US6346144 Slurry for chemically mechanically polishing tungsten film comprising ferrocenium salt reducible to ferrocene and identifiable by color change of slurry to red or blue, silica abrasive, acetic acid to impart desired ph |
| 02/12/2002 | US6346038 Wafer loading/unloading device and method for producing wafers |
| 02/12/2002 | US6346037 Wafer polishing machine |
| 02/12/2002 | US6346034 Cutting method |
| 02/12/2002 | US6346033 Method for polishing disk shaped workpieces and device for carrying out the method |
| 02/12/2002 | US6346032 Fluid dispensing fixed abrasive polishing pad |
| 02/12/2002 | US6345947 Substrate arranging apparatus and method |
| 02/12/2002 | US6345909 Apparatus for infrared pyrometer calibration in a thermal processing system |
| 02/12/2002 | US6345851 Robotic gripping device for gripping an object having a handle on an upper surface |
| 02/12/2002 | US6345718 Method and apparatus for immobilizing solder spheres |
| 02/12/2002 | US6345642 Method and apparatus for removing processing liquid from a processing liquid path |
| 02/12/2002 | US6345630 Sonic nozzle is radially spaced from the edge of the thin disk, and so that the jet of sonicated liquid strikes the edge of the thin disk at an angle approximately between 30 and 50 degrees from tangent to the edge, scanning the disc |
| 02/12/2002 | US6345616 Cutting machine |
| 02/12/2002 | US6345437 Placing an oxidized copper foil one surface side of the ceramic plate and fixing said oxidized copper foil to the plate by heating the plate and the foil; and heating to 1065-108 degrees c. and then cooling to room temperature. |
| 02/12/2002 | US6345404 Wafer cleaning apparatus |
| 02/12/2002 | US6345399 Hard mask process to prevent surface roughness for selective dielectric etching |
| 02/12/2002 | CA2261639C Programmable metallization cell structure and method of making same |
| 02/12/2002 | CA2220600C Method of manufacturing semiconductor article |
| 02/12/2002 | CA2203904C In situ getter pump system and method |
| 02/12/2002 | CA2126649C Method and circuit arrangement for measuring the depletion layer temperature of a gto (gate turn-off) thyristor |
| 02/07/2002 | WO2002011499A1 Method and apparatus for generating x-ray or euv radiation |
| 02/07/2002 | WO2002011216A1 Field effect transistor, circuit arrangement and method for production of a field effect transistor |
| 02/07/2002 | WO2002011212A1 W/wc/tac ohmic and rectifying contacts on sic |
| 02/07/2002 | WO2002011210A1 Inverter |
| 02/07/2002 | WO2002011208A2 Method for fabrication of on-chip inductors and related structure |
| 02/07/2002 | WO2002011205A1 Method for contacting a semiconductor component |
| 02/07/2002 | WO2002011204A1 Multiphase low dielectric constant material and method of deposition |
| 02/07/2002 | WO2002011203A2 Plastic encapsulated semiconductor devices with improved corrosion resistance |
| 02/07/2002 | WO2002011202A2 Method and device for producing connection substrates for electronic components |
| 02/07/2002 | WO2002011201A2 Method and device for producing connection substrates for electronic components |
| 02/07/2002 | WO2002011200A1 Semiconductor memory cell arrangement and method for producing the same |
| 02/07/2002 | WO2002011199A2 Compensation circuit |
| 02/07/2002 | WO2002011196A1 Method for manufacturing single-crystal silicon wafers |
| 02/07/2002 | WO2002011194A1 Single crystal cutting method |
| 02/07/2002 | WO2002011193A2 Process for photoresist descumming and stripping in semiconductor applications by nh3 plasma |
| 02/07/2002 | WO2002011192A1 Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer |
| 02/07/2002 | WO2002011191A2 Near critical and supercritical ozone substrate treatment and apparatus for same |
| 02/07/2002 | WO2002011190A2 Precursors for incorporating nitrogen into a dielectric layer |