| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 02/14/2002 | US20020017673 Semiconductor device with capacitor electrodes and method of manufacturing thereof |
| 02/14/2002 | US20020017671 Dram cell configuration, and method for producing the dram cell configuration |
| 02/14/2002 | US20020017670 Method of forming metal oxide metal capacitors using multi-step rapid material thermal process and a device formed thereby |
| 02/14/2002 | US20020017669 Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same |
| 02/14/2002 | US20020017668 DRAM memory cell for DRAM memory device and method for manufacturing it |
| 02/14/2002 | US20020017667 Ferroelectric memory and method of fabricating the same |
| 02/14/2002 | US20020017664 Protective layer for integrated circuits and method for the manufacturing thereof |
| 02/14/2002 | US20020017662 Manufacturing methods for defect removable semiconductor devices |
| 02/14/2002 | US20020017659 Semiconductor memory device and manufacturing method thereof |
| 02/14/2002 | US20020017658 Process for forming amorphous titanium silicon nitride on substrate |
| 02/14/2002 | US20020017657 Nanocrystalline silicon quantum dots within an oxide layer |
| 02/14/2002 | US20020017654 Protection device with a silicon-controlled rectifier |
| 02/14/2002 | US20020017650 III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer |
| 02/14/2002 | US20020017649 Method for producing insulated gate thin film semiconductor device |
| 02/14/2002 | US20020017648 Semiconductor device |
| 02/14/2002 | US20020017647 Junction termination for SiC schottky diode |
| 02/14/2002 | US20020017645 Electro-optical device |
| 02/14/2002 | US20020017644 Buried channel strained silicon FET using a supply layer created through ion implantation |
| 02/14/2002 | US20020017643 Display device and method of driving the same |
| 02/14/2002 | US20020017642 Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor |
| 02/14/2002 | US20020017641 Integrated circuit dielectric and method |
| 02/14/2002 | US20020017640 Method of manufacturing semiconductor device |
| 02/14/2002 | US20020017630 Mixture of oxidizer and film forming agent |
| 02/14/2002 | US20020017620 Surface inspection apparatus |
| 02/14/2002 | US20020017619 Processing/observing instrument |
| 02/14/2002 | US20020017618 Heating device for heating semiconductor wafers in thermal processing chambers |
| 02/14/2002 | US20020017616 Exposure apparatus and method |
| 02/14/2002 | US20020017599 Shape measurement device |
| 02/14/2002 | US20020017553 Structure of solder bumps with improved coplanarity and method of forming solder bumps with improved coplanarity |
| 02/14/2002 | US20020017534 Chemical delivery systems and methods of delivery |
| 02/14/2002 | US20020017510 Laser processing |
| 02/14/2002 | US20020017465 Filling copper into recesses for interconnects formed on a semiconductor and removing a plating liquid remaining on the substrate-contacting portion with suction |
| 02/14/2002 | US20020017456 Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations |
| 02/14/2002 | US20020017453 Titanium or titanium nitride films at larger distances which allows easy accumulation on the bottom surface of a concave and shorter distances which allows easy accumulation on the side surface of the concave |
| 02/14/2002 | US20020017377 Heating and cooling apparatus, and vacuum processing apparatus equipped with this apparatus |
| 02/14/2002 | US20020017367 Bonding apparatus |
| 02/14/2002 | US20020017365 Substrate holding apparatus and substrate polishing apparatus |
| 02/14/2002 | US20020017364 Systems and methods for two-sided etch of a semiconductor substrate |
| 02/14/2002 | US20020017363 Substrate processing apparatus and substrate processing method |
| 02/14/2002 | US20020017346 Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same |
| 02/14/2002 | US20020017329 Integrated gas control device |
| 02/14/2002 | US20020017315 Apparatus for and method of cleaning object to be processed |
| 02/14/2002 | US20020017311 In-line real-time processing and monitoring of semiconductor wafers by illuminating the wafer with radiation to create a plurality of surface electron-hole pair and heating to desorb contaminants; stabilization electrical properties; cleaning |
| 02/14/2002 | US20020017247 Depositing a first layer of metal, irradiating, analyzing an x-ray spectrum of x-rays leaving said irradiated area of said first layer of metal to determine a thickness; alarm if thickness of layer exceeds a preselected value |
| 02/14/2002 | US20020017246 Gas phase growth system, method of operating the system, and vaporizer for the system |
| 02/14/2002 | US20020017244 Gas collector for epitaxial reactor |
| 02/14/2002 | US20020017243 Showerhead in chemical-enhanced chemical vapor deposition equipment |
| 02/14/2002 | US20020017241 Semiconductor-manufacturing device |
| 02/14/2002 | US20020017237 Apparatus for processing a workpiece |
| 02/14/2002 | US20020017233 Method for manufacturing a semiconductor device |
| 02/14/2002 | US20020017177 Method for sawing wafers employing multiple indexing techniques for multiple die dimensions |
| 02/14/2002 | US20020017064 LSI device polishing composition and method for reproducing LSI device |
| 02/14/2002 | US20020017063 Polycrystalline diamond powder and at least one additive of: oxidizing agents, complex-forming agents, surfactants and organic bases; planarizing precious metals for use as electrode and barrier material in intergrated circuits |
| 02/14/2002 | US20020017013 Mini-modual manufacturing environmental |
| 02/14/2002 | EP1145286A3 Method for structuring a metalliferous layer |
| 02/14/2002 | DE10134444A1 Semiconductor device for reducing junction leakage current and narrow width effect comprises channel stop impurity region self-aligned by spacer and locally formed only at lower portion of isolation region |
| 02/14/2002 | DE10133718A1 Novel compounds containing glycidylalkylacrylate and anthracene containing side groups are useful for the production of antireflective coatings in semiconductor device manufacture |
| 02/14/2002 | DE10131123A1 Photoresistzusammensetzung, die einen Photoradikalbildner und einen Photosäurebildner enthält A photoresist composition containing a photoradical generator and a photoacid |
| 02/14/2002 | DE10121551A1 Reverse conducting thyristor for making an antiparallel connection between a gate-controlled turn-off switch or GCS thyristor and a diode has an isolating area between the diode and a GTO thyristor with a semiconductor substrate. |
| 02/14/2002 | DE10106407A1 Internal voltage generating circuit has voltage compensator that changes flow of current between inner voltage line and power supply node according to voltage difference |
| 02/14/2002 | DE10048196A1 Production of a III-V compound semiconductor based on gallium nitride comprises forming the semiconductor stacked structure on a substrate, etching, forming a first electrode, tempering, and forming a second electrode |
| 02/14/2002 | DE10044541C1 Producing electrically conducting layers on through hole walls in substrate involves deep drawing plastic foil with metal layer in substrate, removing foil from metal layer with conical tools |
| 02/14/2002 | DE10039327A1 Elektronisches Bauelement und Herstellungsverfahren für elektronisches Bauelement Electronic device and manufacturing method of electronic component |
| 02/14/2002 | DE10038323A1 Schaltungsanordnung Circuitry |
| 02/14/2002 | DE10038163A1 Vorrichtung und Verfahren zur Bestückung von Transportgurten Apparatus and method for assembly of conveyor belts |
| 02/14/2002 | DE10037819A1 Circuit board manufacture especially for 3-dimensional semiconductor circuits, has circuit boards supported by flush-jointing of first metallic plane, insulating material plane and second metallic plane |
| 02/14/2002 | DE10037446A1 Verfahren zum Aufbringen von Justiermarken auf einer Halbleiterscheibe A method of applying alignment marks on a semiconductor wafer |
| 02/14/2002 | DE10037270A1 Silicatein-vermittelte Synthese von amorphen Silikaten und Siloxanen und ihre Verwendung Silicatein-mediated synthesis of amorphous silicates and siloxanes and their use |
| 02/14/2002 | DE10036914A1 Integrierte Schaltung mit Temperatursensor Integrated circuit with temperature sensor |
| 02/14/2002 | DE10036911A1 Multi-Bit-Speicherzelle und Verfahren zur Herstellung Multi-bit memory cell and method for producing |
| 02/14/2002 | DE10036725A1 Production of an insulator used in electronic circuits comprises forming a first conducting pathway and a second conducting pathway on a semiconductor substrate using conducting silicon |
| 02/14/2002 | DE10036724A1 Production of a trench in a semiconductor substrate comprises arranging a mask on the substrate having a window, electrochemically etching the surface exposed by the window, forming a porous substrate and removing the porous substrate |
| 02/14/2002 | DE10036691A1 Verfahren zur chemischen Behandlung von Halbleiterscheiben A process for the chemical treatment of semiconductor wafers |
| 02/14/2002 | DE10036208A1 Current control semiconductor device has current within lateral channel region controlled via at least one depletion zone |
| 02/14/2002 | DE10036177A1 Equipment for quality testing of semiconductor devices, measures gap between valence band and conduction band of semiconductor devices |
| 02/14/2002 | DE10036118A1 Influence calculation of failure or breakdown signatures with regional yield data e.g. for manufacture of semiconductor devices, involves preparing yield data table containing several regional yield rates for processed wafers |
| 02/14/2002 | DE10026911A1 Verfahren zur Herstellung einer halbleitenden Nanostruktur und Aggregat davon A process for producing a semiconducting nanostructure and aggregate thereof |
| 02/14/2002 | DE10026553A1 Heterostructure FET consists of a silicon/silicon-germanium heterostructure layer arrangement with a gate contact zone formed as a pn- or np-diode contact made of semiconductor material |
| 02/14/2002 | CA2418428A1 Fluid media particle isolating system |
| 02/13/2002 | EP1179859A2 Method of heat-treating nitride compound semiconductor layer and method of producing semiconductor device |
| 02/13/2002 | EP1179854A1 Heterojunction compound semiconductor device |
| 02/13/2002 | EP1179850A2 A semiconductor memory and its production process |
| 02/13/2002 | EP1179849A2 Memory cell and method of manufacturing |
| 02/13/2002 | EP1179845A2 Semiconductor device and manufacturing method thereof |
| 02/13/2002 | EP1179844A2 Semiconductor packaging |
| 02/13/2002 | EP1179843A2 Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition |
| 02/13/2002 | EP1179842A2 Semiconductor substrate and method for preparing same |
| 02/13/2002 | EP1179841A2 Graphical User Guidance Method and Apparatus for the Optical Measurement of Layers and Substrates and Software |
| 02/13/2002 | EP1179840A1 Method and apparatus for fabricating high fin density heatsinks |
| 02/13/2002 | EP1179839A2 Process for manufacturing a non-volatile memory cell |
| 02/13/2002 | EP1179838A2 Deposition of tungsten films from W(CO)6 |
| 02/13/2002 | EP1179837A2 Transistor structure comprising doped zirconia, or zirconia-like dielectic film |
| 02/13/2002 | EP1179836A2 A contact for indium semiconductor devices incorporating gold solders |
| 02/13/2002 | EP1179835A2 Improved slit valve door and method of assembling |
| 02/13/2002 | EP1179834A2 Plasma processing apparatus and performance validation system therefor |
| 02/13/2002 | EP1179749A1 Resist composition and method for manufacturing semiconductor device using the resist composition |
| 02/13/2002 | EP1179746A2 Kinematic optical mounting |
| 02/13/2002 | EP1179740A2 Boundary scan chain routing |
| 02/13/2002 | EP1179738A2 Test arrangement for an integrated circuit |
| 02/13/2002 | EP1179729A1 Process for real time control of the making of thin film structure through ellipsometric measurement |