Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2002
02/21/2002US20020022681 For encapsulation of semiconductor devices by potting, chip-on-bonding or screen printing
02/21/2002US20020022445 Substrate cleaning apparatus
02/21/2002US20020022441 Slurry supply apparatus and method
02/21/2002US20020022440 Supply of controlled amount of polishing slurry to semiconductor wafers
02/21/2002US20020022438 Polishing method and polishing apparatus
02/21/2002US20020022403 Connectors for an eletrostatic chuck
02/21/2002US20020022384 Conductive adhesive having a palladium matrix interface between two metal surfaces
02/21/2002US20020022379 Reformation and crystallization of tantalum oxide film
02/21/2002US20020022378 Method to produce a porous oxygen-silicon layer
02/21/2002US20020022377 Film forming method and film forming apparatus
02/21/2002US20020022376 Method for fabricating gate oxide film of semiconductor device
02/21/2002US20020022375 Method for manufacturing a semiconductor memory device
02/21/2002US20020022374 Adhered particles mask over a substrate to protect portions of it
02/21/2002US20020022373 Method for fabricating a wiring plane on a semiconductor chip with an antifuse
02/21/2002US20020022372 Method for reducing micro-particle adsorption effects
02/21/2002US20020022371 Methods of forming insulating materials between conductive components and methods of forming insulating materials around a conductive component
02/21/2002US20020022370 Chemical mechanical polishing; low static etching rate at high temperatures; for manufacturing semiconductor devices with reduced dishing and overpolish insensitivity
02/21/2002US20020022369 Comprises deionized water, metallic oxide, and cyclic amines for the chemical mechanical polishing of thin films used in integrated circuit manufacturing
02/21/2002US20020022368 Chemical vapor deposition of titanium silicide film on silicon substrate and reaction with nitrogen or ammonia gas plasma minimizes etching of substrate and consumption of dopant of an impurity layer
02/21/2002US20020022367 Method for fabricating semiconductor device
02/21/2002US20020022366 Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow Junctions
02/21/2002US20020022365 Method and apparatus for wiring, wire, and integrated circuit
02/21/2002US20020022364 Method for producing a metal film, a thin film device having such metal film and a liquid crystal display device having such thin film device
02/21/2002US20020022363 Method for filling recessed micro-structures with metallization in the production of a microelectronic device
02/21/2002US20020022362 Buried ground plane for high performance system modules
02/21/2002US20020022361 Metal via contact of a semiconductor device and method for fabricating the same
02/21/2002US20020022360 Semiconductor memory device for eliminating floating body effect and method of fabricating the same
02/21/2002US20020022359 Anti-reflective coatings and methods for forming and using same
02/21/2002US20020022358 Antireflective coating has etch rate such that it can be removed simultaneously with the cleaning of an opening; for use in photolithography
02/21/2002US20020022357 Semiconductor integrated circuit device and process for manufacturing the same
02/21/2002US20020022355 Semiconductor device and method for fabricating the same
02/21/2002US20020022354 Method of doping a gate and creating a very shallow source/drain extension and resulting semiconductor
02/21/2002US20020022353 Semiconductor device and manufacturing method thereof
02/21/2002US20020022352 Method for manufacturing semiconductor device with power semiconductor element and diode
02/21/2002US20020022351 Method for the production of an epitaxially grown semiconductor wafer
02/21/2002US20020022350 Fabricating a thin film transistor using a crystalline semiconductor film obtained using crystallization catalyst
02/21/2002US20020022349 Semiconductor thin-film formation process, and amorphous silicon solar-cell device
02/21/2002US20020022348 Semiconductor substrate and production method thereof
02/21/2002US20020022347 Doping source gas, etching gas, and reducing gas to produce smooth uniform layer of silicon/germanium over semiconductor substrate
02/21/2002US20020022346 Gettering regions and methods of forming gettering regions within a semiconductor wafer
02/21/2002US20020022345 Method and manufacturing piezoelectric device
02/21/2002US20020022344 Surface finishing of SOI substrates using an EPI process
02/21/2002US20020022343 Semiconductor device and method of manufacturing the same
02/21/2002US20020022342 Method and device for producing a metal/metal contact in a multilayer metallization of an integrated circuit
02/21/2002US20020022340 Method of forming a shallow trench isolation
02/21/2002US20020022339 Method for forming an insulator having a low dielectric constant on a semiconductor substrate
02/21/2002US20020022338 Method for forming a trench in a semiconductor substrate
02/21/2002US20020022337 Treatment process for molecular bonding and unbonding of two structures
02/21/2002US20020022336 Depletion compensated polysilicon electrodes
02/21/2002US20020022335 Fabrication process for metal-insulator-metal capacitor with low gate resistance
02/21/2002US20020022334 Metal oxynitride capacitor barrier layer
02/21/2002US20020022333 Process for fabricating a capacitor within an integrated circuit, and corresponding integrated circuit
02/21/2002US20020022332 Manufacturing of capacitors with metal armatures
02/21/2002US20020022331 High capacitance damascene capacitors
02/21/2002US20020022330 Bipolar transistor and method for fabricating the same
02/21/2002US20020022329 Method of improving a dual gate CMOS transistor to resist the boron-penetrating effect
02/21/2002US20020022328 Method of forming PID protection diode for SOI wafer
02/21/2002US20020022327 Method for fabricating a semiconductor device having an elevated source/drain scheme
02/21/2002US20020022326 Semiconductor device and method of manufacturing the same
02/21/2002US20020022325 Method of making ultra thin oxide formation using selective etchback technique integrated with thin nitride layer for high performance mosfet
02/21/2002US20020022324 Manufacture of trench-gate semiconductor devices
02/21/2002US20020022323 Non-volatile semiconductor memory device and method of manufacturing the same
02/21/2002US20020022322 Triple self-aligned split-gate non-volatile memory device
02/21/2002US20020022321 Method of forming self-aligned stacked capacitor
02/21/2002US20020022320 Methods of forming capacitors and related integrated circuitry
02/21/2002US20020022319 Semiconductor processing methods of forming dynamic random access memory (dram) circuitry
02/21/2002US20020022318 Method for forming capacitor of semiconductor device
02/21/2002US20020022317 Semiconductor device having rigid capacitor structure and method for fabricating the same
02/21/2002US20020022316 Method for fabricating capacitor electrodes
02/21/2002US20020022315 Self-aligned damascene interconnect
02/21/2002US20020022314 Dummy structures that protect circuit elements during polishing
02/21/2002US20020022313 Method of fabricating a sram device
02/21/2002US20020022312 Method of fabricating semiconductor device
02/21/2002US20020022311 Semiconductor device and manufacturing method thereof
02/21/2002US20020022308 Method of preventing semiconductor layers from bending and seminconductor device formed thereby
02/21/2002US20020022307 Method of fabricating a thin film transistor and manufacturing equipment
02/21/2002US20020022305 Passivation layer for packaged integrated circuits
02/21/2002US20020022304 Semiconductor device, method for fabricating the same, circuit board and electronic device
02/21/2002US20020022302 Method of fabricating semiconductor device
02/21/2002US20020022296 Method of manufacturing a charge-coupled image sensor
02/21/2002US20020022294 Thermally induced reflectivity switch for laser thermal processing
02/21/2002US20020022293 Charge transfer device and solid image pickup apparatus using the same
02/21/2002US20020022291 Production method for integrated angular speed sensor device
02/21/2002US20020022290 Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
02/21/2002US20020022289 Positioning of semiconductor laser chips is corrected by profile recognition and light-emission axis recognition; mechanism driven by piezoelectrity
02/21/2002US20020022288 Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer
02/21/2002US20020022287 Gallium nitride pyramids are grown on the non-gallium nitride tops and then on pyramids at differing temperatures, which then coalesce to form a continuous gallium nitride layer; mask free for uninterupted production
02/21/2002US20020022286 Method for growing p-n heterojunction-based structures utilizing HVPE techniques
02/21/2002US20020022283 Apparatus for conditioning the atmosphere in a chamber
02/21/2002US20020022282 Method for measurement of electromigration in semiconductor integrated circuits
02/21/2002US20020022281 Convertible hot edge ring to improve low-k dielectric etch
02/21/2002US20020022280 Repair of film having an si-o backbone
02/21/2002US20020022279 Ferroelectric memory device and manufacturing method thereof
02/21/2002US20020022278 Capacitor utilizing C-axis oriented lead germanate film
02/21/2002US20020022277 Stabilization; silicon oxyfluoride dielectric
02/21/2002US20020022210 Wafer treatment chamber having thermal reflector
02/21/2002US20020022197 Using polymer
02/21/2002US20020022196 Planarizing antireflective coating compositions
02/21/2002US20020022195 Substrate processing method and substrate processing apparatus
02/21/2002US20020022193 Resist composition and method for manufacturing semiconductor device using the resist composition