| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 02/20/2003 | WO2002093618A3 Semiconductor structure including low-leakage, high crystalline dielectric |
| 02/20/2003 | US20030036483 High temperature superconducting thick films |
| 02/20/2003 | US20030035769 Carbide and oxycarbide based compositions, rigid porous structures including the same, methods of making and using the same |
| 02/20/2003 | US20030033976 Silicon carbide sublimation systems and associated methods |
| 02/18/2003 | US6521042 Semiconductor growth method |
| 02/13/2003 | WO2003012831A2 Structure including a monocrystalline perovskite oxide layer |
| 02/13/2003 | WO2003012826A2 Monitoring and controlling perovskite oxide film growth |
| 02/13/2003 | US20030029376 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles |
| 02/11/2003 | US6518637 Cubic (zinc-blende) aluminum nitride |
| 02/06/2003 | WO2002093664A3 Cesium dispensers and process for the use thereof |
| 02/04/2003 | US6514897 nanorods having carbides and/or oxycarbides; catalyst supports for various catalysts such as hydrogenation, hydrodesulfurisation, hydrodenitrogenation, hydrodemetallisation, hydrodeoxygenation, hydrodearomatization, dehydrogenation, hydrogenolysis, isomerization, alkylation, dealkylation, oxidation |
| 02/04/2003 | US6514338 Comprising allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows |
| 01/30/2003 | WO2003009354A1 Semiconductor structure including a monocrystalline compound semiconductor layer |
| 01/30/2003 | WO2003008084A1 Method for making synthetic gems comprising elements recovered from complete or partial human or animal remains and the product thereof |
| 01/30/2003 | WO2001026165A9 Method and apparatus for forming buffer layers |
| 01/30/2003 | US20030022525 Semiconductor structure and device including a monocrystalline layer formed overlying a compliant substrate and a method of forming the same |
| 01/30/2003 | US20030022520 Light-assisted deposition method for fabricating a compliant substrate for epitaxial growth of monocrystalline materials |
| 01/30/2003 | US20030022431 Structure including a monocrystalline perovskite oxide layer and method of forming the same |
| 01/30/2003 | US20030021885 Processing line having means to monitor crystallographic orientation |
| 01/30/2003 | US20030021732 Multilayer semiconductor laser analyzer; vertical cavities |
| 01/30/2003 | US20030020089 Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| 01/30/2003 | US20030019668 Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
| 01/30/2003 | US20030019507 Cleaning and drying method and apparatus |
| 01/29/2003 | CN1393575A Molecular beam source apparatus for film deposition and method for depositing film by molecular beam |
| 01/28/2003 | US6512229 Process for preparing a bolometer material and bolometer device |
| 01/23/2003 | WO2002041365A3 Single crystalline oxide on a semiconductor substrate |
| 01/23/2003 | US20030017932 Cremeting; filtering carbon particles; sublimation; polishing |
| 01/21/2003 | US6509070 Laser ablation, low temperature-fabricated yttria-stabilized zirconia oriented films |
| 01/21/2003 | US6508880 Apparatus for growing low defect density silicon carbide |
| 01/16/2003 | WO2003005425A1 Semiconductor layer formation utilizing laser irradiation |
| 01/16/2003 | WO2002089188A3 Semiconductor structures utilizing binary metal oxide layers |
| 01/16/2003 | WO2002048434A3 Gallium nitride materials and methods for forming layers thereof |
| 01/16/2003 | WO2001068957A9 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 01/16/2003 | US20030013275 Isotopically pure silicon-on-insulator wafers and method of making same |
| 01/16/2003 | US20030010978 Semiconductor wafers with integrated heat spreading layer |
| 01/15/2003 | EP1144737B1 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 01/14/2003 | US6507046 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
| 01/14/2003 | US6506618 Method of forming a GaInNAs layer |
| 01/09/2003 | WO2003003431A1 Relaxed sige films by surfactant mediation |
| 01/09/2003 | US20030008772 Carbon nanotubes, carbide nanorods, and mixtures with uniform diameter of 1-100 nm, length to diameter ratio of > 5, and ammonia desorption peak at a temperature of >100 degrees C; isomerization catalysts |
| 01/09/2003 | US20030008527 Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate and laser radiation for materials used to form the same |
| 01/09/2003 | US20030008505 Method to grow self-assembled epitaxial nanowires |
| 01/09/2003 | US20030008179 Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon |
| 01/09/2003 | US20030005878 ZnO/sapphire substrate and method for manufacturing the same |
| 01/07/2003 | US6503610 Having low dislocation density without increasing thickness of mask layer; regrowth of masking layer continues until disappearance of underlying crystal |
| 01/03/2003 | WO2003001573A2 Apparatus for fabricating semiconductor structures |
| 01/02/2003 | US20030003704 Underlayer made of a III-V semiconductor compound is formed on a substrate, and a chromium-antimony (crsb) compound is epitaxially grown by molecular beam epitaxy; ferromagnetic layer |
| 01/02/2003 | EP1271569A2 Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure |
| 01/02/2003 | EP1270768A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
| 01/02/2003 | EP1268883A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 01/02/2003 | EP1268882A2 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
| 01/01/2003 | CN1388838A Titanium dioxide cobalt magnetic film and its manufacturing method |
| 12/31/2002 | US6500568 Palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations; high temperature superconductivity |
| 12/31/2002 | US6500258 Method of growing a semiconductor layer |
| 12/27/2002 | WO2002103090A2 A method of growing a semiconductor layer |
| 12/27/2002 | WO2002103089A2 Heating of an effusion cell for molecular beam epitaxy |
| 12/26/2002 | US20020198112 High temperature superconductor ceramics and sintering products of interaction with silicone material |
| 12/26/2002 | US20020197841 Group III nitride compound semiconductor element and method for producing the same |
| 12/26/2002 | US20020197501 Palladium layer has desired in-plane and out-of-plane crystallographic orientations, which allow subsequent layers that are applied on the article to also have the desired orientations; high temperature superconductivity |
| 12/26/2002 | US20020197489 Silicon, a buffer layer, template layer comprises a perovskite oxide |
| 12/26/2002 | US20020197418 Molecular beam epitaxy effusion cell for use in vacuum thin film deposition and a method therefor |
| 12/26/2002 | US20020195057 Apparatus for fabricating semiconductor structures and method of forming the same |
| 12/24/2002 | US6498113 Free standing substrates by laser-induced decoherency and regrowth |
| 12/24/2002 | US6497829 Heating doped silicon and carbon while subjecting to a vacuum, to vaporize and diffuse the silicon and to react the silicon vapor with the carbon in the binder |
| 12/24/2002 | US6497764 Method for growing SiC single crystals |
| 12/19/2002 | US20020192508 Method of fabricating improved buffer architecture for biaxially textured structures |
| 12/19/2002 | US20020189536 Silicon carbide single crystal and production thereof |
| 12/19/2002 | US20020189535 Method for manufacturing semiconductor crystal film |
| 12/19/2002 | US20020189534 GaN selective growth on SiC substrates by ammonia-source MBE |
| 12/19/2002 | US20020189533 Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof |
| 12/19/2002 | US20020189532 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 12/18/2002 | EP1267408A2 Composite integrated circuit and its fabrication method |
| 12/18/2002 | EP1266958A1 Bio-chip substrate for the embedding of DNA or protein and its fabrication method |
| 12/12/2002 | WO2002099168A1 Biaxially textured metal substrate with palladium layer |
| 12/12/2002 | WO2002083975A9 Apparatus and method for epitaxial sputter deposition of epilayers and high quality films |
| 12/12/2002 | WO2002047119A3 High temperature superconducting thick films |
| 12/12/2002 | US20020187356 Reducing stresses; noncracking; semiconductor |
| 12/12/2002 | DE10125912A1 Production of a semiconductor layer on a crystalline substrate by molecular beam epitaxy used in the semiconductor industry comprises growing at a specified temperature using a vicinal substrate having a predetermined mis-orientation |
| 12/11/2002 | EP1264011A1 Iii-v nitride substrate boule and method of making and using the same |
| 12/11/2002 | CN1384892A Method and apparatus for growing silicon carbice crystals |
| 12/05/2002 | WO2002097174A1 PRODUCTION METHOD OF α-SIC WAFER |
| 12/05/2002 | WO2002097173A2 Semi-insulating silicon carbide without vanadium domination |
| 12/05/2002 | WO2002097172A2 Molecular beam epitaxy equipment |
| 12/05/2002 | US20020182889 Free standing substrates by laser-induced decoherency and regrowth |
| 12/05/2002 | US20020182885 Lithium fluoride from lithium carbonate; simple multistep conversion; industrial scale |
| 12/05/2002 | US20020178999 Laminate articles on biaxially textured metal substrates |
| 12/05/2002 | CA2446818A1 Semi-insulating silicon carbide without vanadium domination |
| 12/04/2002 | CN2523768Y Ampoule for purifying and growing mono-crystal |
| 12/04/2002 | CN1382842A Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling |
| 12/03/2002 | US6489587 Fabrication method of erbium-doped silicon nano-size dots |
| 12/03/2002 | US6488908 Spinel ferrite thin film and method of manufacturing the same |
| 11/28/2002 | WO2002095084A1 Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture |
| 11/28/2002 | US20020177328 Substrate for semiconductor device and method of manufacturing the same |
| 11/27/2002 | EP1259662A1 Method and apparatus for growing low defect density silicon carbide and resulting material |
| 11/26/2002 | US6485565 Process and apparatus for making oriented crystal layers |
| 11/21/2002 | WO2002093664A2 Cesium dispensers and process for the use thereof |
| 11/21/2002 | WO2002093618A2 Semiconductor structure including low-leakage, high crystalline dielectric |
| 11/21/2002 | WO2002092886A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 11/21/2002 | US20020170491 Seed crystal holders and seed crystals for fabricating silicon carbide crystals and methods of fabricating silicon carbide crystals |
| 11/21/2002 | US20020170490 Method and apparatus for growing aluminum nitride monocrystals |