| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 04/12/2006 | EP1646078A1 Epitaxial growth process |
| 04/06/2006 | US20060073978 Method and apparatus for making continuous films of a single crystal material |
| 04/05/2006 | EP1419542B1 Method for dispensing cesium and its use in the manufacture of oled screens |
| 04/04/2006 | US7023025 Crystal growth method of nitride semiconductor |
| 04/04/2006 | US7022183 Semiconductor thin film and process for production thereof |
| 04/04/2006 | US7022182 Ferromagnetic p-type single-crystal zinc oxide material and manufacturing method thereof |
| 04/04/2006 | US7021238 Molecular beam epitaxy equipment |
| 03/30/2006 | US20060068096 Method of synthesising carbon nano tubes |
| 03/30/2006 | US20060065187 Ultratough CVD single crystal diamond and three dimensional growth thereof |
| 03/30/2006 | US20060065186 Process for producing crystalline thin film |
| 03/30/2006 | US20060065185 Crystallization apparatus, crystallization method, and phase shifter |
| 03/29/2006 | EP1640482A1 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
| 03/29/2006 | EP1639158A1 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
| 03/29/2006 | CN1247832C Automatic pressure control device for SiC single-crystal growth |
| 03/29/2006 | CN1247831C Silicon carbide crystal growth apparatus |
| 03/23/2006 | WO2006030884A1 Thin film producing method |
| 03/23/2006 | US20060060132 Production method for thin-film crystal wafer, semiconductor device using it and production method therefor |
| 03/23/2006 | US20060060131 Method of forming a rare-earth dielectric layer |
| 03/22/2006 | CN1751379A Buffer structure for modifying a silicon substrate |
| 03/21/2006 | US7015495 Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate |
| 03/21/2006 | US7014702 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same |
| 03/16/2006 | US20060057383 Telescoped multiwall nanotube and manufacture thereof |
| 03/16/2006 | US20060054079 Forming structures by laser deposition |
| 03/16/2006 | DE10303875B4 Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur Structure, in particular semiconductor structure, as well as methods for manufacturing a structure |
| 03/15/2006 | EP1634321A2 Phase controlled sublimation |
| 03/14/2006 | US7012318 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 03/14/2006 | US7011706 Device substrate and method for producing device substrate |
| 03/09/2006 | US20060048702 Method for manufacturing a silicon structure |
| 03/09/2006 | US20060048701 Method of growing group III nitride crystals |
| 03/09/2006 | US20060048700 Method for achieving device-quality, lattice-mismatched, heteroepitaxial active layers |
| 03/08/2006 | EP1632591A1 Silicon epitaxial wafer, and silicon epitaxial wafer producing method |
| 03/08/2006 | EP1130137B1 Material for raising single crystal sic and method of preparing single crystal sic |
| 03/02/2006 | WO2005065143A3 Isotopically pure silicon-on-insulator wafers and method of making same |
| 03/02/2006 | US20060042542 Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers |
| 03/02/2006 | US20060042541 Method for preparation of ferroelectric single crystal film structure using deposition method |
| 02/28/2006 | US7004234 Vaporizer for generating feed gas for an arc chamber |
| 02/23/2006 | WO2006019692A1 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 02/23/2006 | US20060040168 Nanostructured fuel cell electrode |
| 02/22/2006 | EP1627940A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
| 02/21/2006 | US7002179 ZnO system semiconductor device |
| 02/21/2006 | US7001791 GaN growth on Si using ZnO buffer layer |
| 02/21/2006 | US7001459 Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy |
| 02/16/2006 | US20060035446 Apparatus of catalytic molecule beam epitaxy and process for growing III-nitride materials using the apparatus |
| 02/16/2006 | US20060035438 Method and resulting structure for manufacturing semiconductor substrates |
| 02/16/2006 | US20060032434 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 02/16/2006 | US20060032433 Rapid X-ray diffraction method for structural analysis of a nano material on a surface or at an interface and for structural analysis of a solid/liquid interface, and apparatus used for the method |
| 02/16/2006 | US20060032432 Bulk single crystal gallium nitride and method of making same |
| 02/09/2006 | WO2006015185A2 GaInP/GaAs/Si TRIPLE JUNCTION SOLAR CELL ENABLED BY WAFER BONDING AND LAYER TRANSFER |
| 02/09/2006 | WO2006013826A1 Bi LAYERED COMPOUND NANOPLATE, ARRAY THEREOF, PROCESS FOR PRODUCING THEM, AND APPARATUS UTILIZING THE SAME |
| 02/09/2006 | WO2006013344A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/09/2006 | US20060027162 Crystallization apparatus, crystallization method, and phase modulation device |
| 02/09/2006 | US20060027161 Method for heat-treating silicon wafer and silicon wafer |
| 02/09/2006 | CA2569832A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/08/2006 | CN1240883C Method for preparing p-type Zn1-XMgXO crystal film |
| 02/08/2006 | CN1240882C Method for preparing n-type An1-XMgXO crystal film |
| 02/07/2006 | US6995077 Epitaxially coated semiconductor wafer and process for producing it |
| 02/07/2006 | US6995076 Relaxed SiGe films by surfactant mediation |
| 02/07/2006 | US6995036 Production method of α-SiC wafer |
| 02/02/2006 | WO2006011976A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 02/02/2006 | WO2005007937A3 Annealing single crystal chemical vapor deposition diamonds |
| 02/02/2006 | WO2005007935A3 Tough diamonds and method of making thereof |
| 02/02/2006 | US20060022308 Group III-V compound semiconductor and method for producing the same |
| 02/02/2006 | US20060021570 Reduction in size of hemispherical grains of hemispherical grained film |
| 02/02/2006 | US20060021565 GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer |
| 02/02/2006 | US20060021564 Nanostructures produced by phase-separation during growth of (iii-v )1-x(iv2)x alloys |
| 02/01/2006 | EP1587971A4 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 02/01/2006 | CN1729317A Method for forming carbon nanotubes |
| 02/01/2006 | CN1239735C Vaporizer boat for lining coating device |
| 01/31/2006 | US6992202 Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same |
| 01/26/2006 | US20060016388 Domain epitaxy for thin film growth |
| 01/26/2006 | US20060016387 Silicon wafer, its manufacturing method, and its manufacturing apparatus |
| 01/25/2006 | CN1238575C Method of building crystal to grow lead zirconate titanate film |
| 01/19/2006 | US20060011131 SiC material, semiconductor device fabricating system and SiC material forming method |
| 01/19/2006 | US20060011130 Methods of growing epitaxial silicon |
| 01/19/2006 | US20060011129 Method for fabricating a compound semiconductor epitaxial wafer |
| 01/19/2006 | US20060011128 Homoepitaxial growth of SiC on low off-axis SiC wafers |
| 01/18/2006 | EP1617464A1 Method of growing semiconductor crystal |
| 01/17/2006 | US6987072 Method of producing semiconductor crystal |
| 01/12/2006 | WO2006003231A1 Phosphorus effusion cell arrangement and method for producing molecular phosphorus |
| 01/12/2006 | US20060009362 Single crystalline base thin film |
| 01/12/2006 | US20060006464 Method and system for providing a thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization |
| 01/12/2006 | US20060005763 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 01/12/2006 | US20060005762 Method for producing silicon wafer |
| 01/11/2006 | EP1614776A2 Method for manufacturing aluminium nitride single crystal |
| 01/11/2006 | EP1249521B1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 01/10/2006 | US6984448 Cubic boron nitride clusters |
| 01/05/2006 | WO2005111279A3 Gan bulk growth by ga vapor transport |
| 01/05/2006 | US20060003584 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device |
| 01/04/2006 | EP1461286A4 Differential stress reduction in thin films |
| 01/04/2006 | CN1717780A 3-5 group compound semiconductor and method for preparation thereof |
| 01/04/2006 | CN1717508A Method and device for AIN single crystal production with gas-permeable crucible walls |
| 01/04/2006 | CN1715461A AlgalnN single-crystal wafer |
| 12/29/2005 | US20050284360 Atomic layer deposition using electron bombardment |
| 12/22/2005 | WO2005121414A1 Deposition of buffer layers on textured metal surfaces |
| 12/14/2005 | CN1708608A Method for forming thin film on basic material through intermediate layer |
| 12/14/2005 | CN1708607A Single crystal base thin film |
| 12/13/2005 | US6974501 Multi-layer articles and methods of making same |
| 12/08/2005 | US20050269021 Forming separation layer on base having single crystal or textured surface, buffer layer, metal oxide layer, and removing separation layer; for multilayer superconductive tapes, ferroelectric multilayer thin films, and optoelectronic devices |
| 12/08/2005 | US20050268842 AlGaInN Single-Crystal Wafer |
| 12/08/2005 | DE10200445B4 Metallband für epitaktische Beschichtungen und Verfahren zu dessen Herstellung Metal strip for epitaxial coatings, and process for its preparation |