| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 08/04/2005 | US20050166833 Method of fixing seed crystal and method of manufacturing single crystal using the same |
| 08/03/2005 | EP1392895B1 Semi-insulating silicon carbide without vanadium domination |
| 08/03/2005 | CN1213177C Method and device for producing at least one silicon carbide monocrystal |
| 08/02/2005 | US6924012 Vapor deposition; molecular beam epitaxial |
| 08/02/2005 | US6923859 Apparatus for manufacturing GaN substrate and manufacturing method thereof |
| 07/28/2005 | US20050163692 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
| 07/28/2005 | US20050161773 Rare earth-oxides, rare earth nitrides, rare earth phosphides and ternary alloys with silicon |
| 07/28/2005 | US20050161663 Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
| 07/28/2005 | US20050160972 Method and resulting structure for manufacturing semiconductor substrates |
| 07/28/2005 | US20050160965 Seed crystal of silicon carbide single crystal and method for producing ingot using same |
| 07/27/2005 | EP1557486A1 Single crystal base thin film |
| 07/27/2005 | EP1557485A1 Method for forming thin film on basic material through intermediate layer |
| 07/26/2005 | US6921741 Superconducting articles |
| 07/26/2005 | US6921726 Growing smooth semiconductor layers |
| 07/21/2005 | WO2005067049A1 Isotopically pure silicon-on-insulator wafers and method of making same |
| 07/21/2005 | WO2005065143A2 Isotopically pure silicon-on-insulator wafers and method of making same |
| 07/21/2005 | US20050158993 Lncuo(s,se,te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film |
| 07/21/2005 | US20050156155 Electronics, opto-electronic, magneto-electronics and magneto-optics devices, single crystal, integrated circuits |
| 07/20/2005 | CN1643677A Method and resulting structure for manufacturing semiconductor substrates |
| 07/19/2005 | US6919261 Method and resulting structure for manufacturing semiconductor substrates |
| 07/19/2005 | US6919138 Magnetic recording media |
| 07/07/2005 | WO2005061756A1 High temperature vacuum evaporation apparatus |
| 07/07/2005 | WO2004111319A3 Sacrificial template method of fabricating a nanotube |
| 07/07/2005 | US20050148206 Atomic layer deposition using photo-enhanced bond reconfiguration |
| 07/07/2005 | US20050145836 Influence of surface geometry |
| 07/07/2005 | US20050145165 Lithium niobate substrate and method of producing the same |
| 07/07/2005 | US20050145164 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| 07/06/2005 | CN1635191A Process for preparing ZnO monocrystal film on gamma-LiAlO2 substrate |
| 07/05/2005 | US6914012 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same |
| 06/30/2005 | DE10352655A1 Heteroepitaxieschicht und Verfahren zu ihrer Herstellung Heteroepitaxieschicht and processes for their preparation |
| 06/29/2005 | EP1547131A1 Large-diameter sic wafer and manufacturing method thereof |
| 06/29/2005 | CN1632185A Process for preparing low-temperature phase barium metaborate monocrystalline film through magnetron sputtering |
| 06/29/2005 | CN1208850C Enhanced coated high-temperature superconductor |
| 06/28/2005 | CA2178656C Process for growing an epitaxial film on an oxide surface and product |
| 06/23/2005 | WO2005056869A1 A method for manufacturing diamond coatings |
| 06/23/2005 | US20050136564 Method of laterally growing GaN with indium doping |
| 06/23/2005 | US20050132951 Homogeneous incorporation of activator element in a storage phosphor |
| 06/23/2005 | US20050132950 Method of growing aluminum-containing nitride semiconductor single crystal |
| 06/16/2005 | US20050126471 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 06/16/2005 | DE102004056741A1 Lithium niobate substrate, useful as acoustic surface wave device for mobile telephones, is prepared by heat treating crystalline material at relatively low temperature |
| 06/15/2005 | EP1540049A1 Dual chamber integrated phase separator for ultra high vacuum system |
| 06/15/2005 | EP1540048A1 Silicon carbide single crystal and method and apparatus for producing the same |
| 06/09/2005 | US20050124161 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
| 06/09/2005 | US20050120943 Method and apparatus for growing silicon carbide crystals |
| 06/08/2005 | EP1243674B1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 06/07/2005 | US6902620 Atomic layer deposition systems and methods |
| 06/02/2005 | WO2005050722A1 DESIGN AND FABRICATION OF 6.1- Å FAMILY SEMICONDUCTOR DEVICES USING SEMI-INSULATING AlSb SUBSTRATE |
| 06/02/2005 | US20050115492 Method and apparatus of the chemical metal organic vapor epitaxy for the multi-chamber epitaxy layer deposition |
| 06/02/2005 | CA2544878A1 Large area, uniformly low dislocation density gan substrate and process for making the same |
| 06/01/2005 | CN1621578A Lithium niobate substrate and manufacturing method thereof |
| 05/31/2005 | US6899965 Dielectric film and method for forming the same |
| 05/31/2005 | US6899928 Dual ion beam assisted deposition of biaxially textured template layers |
| 05/26/2005 | WO2005047574A2 Heteroepitaxial layer and method for the production thereof |
| 05/26/2005 | US20050109282 Method for manufacturing diamond coatings |
| 05/25/2005 | EP1532288A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices |
| 05/25/2005 | DE10341806A1 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Schicht und integriertes Halbleiterbauelement mit einer epitaktischen mit Arsen in-situ dotierten Silizium-Germanium Schicht A process for producing an epitaxial silicon-germanium layer and integrated semiconductor device with an epitaxial doped with arsenic in-situ silicon-germanium layer |
| 05/24/2005 | US6897560 Ultraviolet-transparent conductive film and process for producing the same |
| 05/24/2005 | US6897100 Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| 05/24/2005 | US6896731 P-type single crystal zinc-oxide having low resistivity and method for preparation thereof |
| 05/24/2005 | CA2206884C Single crystal of nitride and process for preparing the same |
| 05/19/2005 | US20050103261 Epitaxially coated semiconductor wafer |
| 05/19/2005 | US20050103260 Method of exposing wafer using scan-type exposure apparatus |
| 05/19/2005 | US20050103258 Epitaxial organic layered structure and method for making |
| 05/18/2005 | CN1618122A An oxide layer on a GAAS-based semiconductor structure and method of forming same |
| 05/18/2005 | CN1617945A Method of synthesizing a compound of the formula Mn*Axn, film of the compound and its use |
| 05/17/2005 | US6893732 Multi-layer articles and methods of making same |
| 05/12/2005 | WO2005043604A2 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
| 05/12/2005 | US20050098428 Silver selenide film stoichiometry and morphology control in sputter deposition |
| 05/12/2005 | US20050098094 Semiconductor device having partially insulated field effect transistor (PiFET) and method of fabricating the same |
| 05/12/2005 | US20050098093 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
| 05/11/2005 | CN1614104A Preparation for single-crystal thin film covering layer substrate with r-LiALO2 |
| 05/11/2005 | CN1614103A Preparation for r-Li ALO2 single-crystal thin-film covering layer substrate by pulsing laser deposition |
| 05/10/2005 | US6890600 SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device |
| 05/06/2005 | WO2005041253A2 Methods for forming superconductor articles and xrd methods for characterizing same |
| 05/05/2005 | US20050093003 III-V group nitride system semiconductor substrate |
| 05/05/2005 | US20050092235 Epitaxial semiconductor deposition methods and structures |
| 05/05/2005 | US20050092233 Single and multi-layer crystalline structures |
| 05/05/2005 | US20050092230 Method for fabricating a semiconductor crystal |
| 05/04/2005 | CN1612957A Metal strip for epitaxial coating and method for production thereof |
| 05/03/2005 | US6887775 Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer |
| 04/27/2005 | EP1525340A2 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 04/21/2005 | US20050081781 Fully dry, Si recess free process for removing high k dielectric layer |
| 04/20/2005 | EP1523463A2 Diamondoid-based components in nanoscale construction |
| 04/20/2005 | CN1608310A Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 04/20/2005 | CN1607979A Modified carbide and oxycarbide containing catalysts and methods of making and using thereof |
| 04/14/2005 | WO2004105098A3 P-type group ii-vi semiconductor compounds |
| 04/14/2005 | US20050079735 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device |
| 04/14/2005 | US20050076830 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
| 04/14/2005 | US20050076828 Process for fabrication of III nitride-based compound semiconductors |
| 04/14/2005 | US20050076825 Method of synthesizing a compound of the formula mn+1axn5 film of the compound and its use |
| 04/07/2005 | WO2005032217A1 Epitaxial organic layered structure and method for making |
| 04/07/2005 | US20050072351 Direct synthesis of oxide nanostructures of low-melting metals |
| 04/05/2005 | US6874668 Telescoped multiwall nanotube and manufacture thereof |
| 03/31/2005 | US20050067629 Semimetal semiconductor |
| 03/30/2005 | EP1518005A1 Material evaporation chamber with differential vacuum pumping |
| 03/29/2005 | US6872236 Electrodeposition of metals on nanotubes using plasma arcs having graphite anodes and cathodes |
| 03/24/2005 | WO2005012601A3 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 03/24/2005 | US20050061232 Doped organic semiconductor materials and process for their preparation |
| 03/24/2005 | DE10338406A1 Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung Doped organic semiconductor materials as well as processes for their preparation |
| 03/22/2005 | US6869806 Method and apparatus for the production of a semiconductor compatible ferromagnetic film |