| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 10/11/2000 | EP1043427A1 Semiconductor structure having a crystalline alkaline earth metal oxide interface between silicon and a single crystal oxide layer |
| 10/11/2000 | EP1043426A1 Method for fabricating a semiconductor structure having a single atomic layer with alkaline earth metal metal, oxygen and silicon at the interface between a silicon substrate and a single crystal oxide layer |
| 10/11/2000 | EP1042095A1 Substrates for superconductors |
| 10/03/2000 | US6126744 Method and system for adjusting semiconductor processing equipment |
| 10/03/2000 | CA2161487C Process for preparing a substrate for the deposition of a thin supercon ducting material layer |
| 09/27/2000 | EP1038996A1 Combinatorial molecular layer epitaxy device |
| 09/27/2000 | EP1038057A1 Low vacuum vapor process for producing superconductor articles with epitaxial layers |
| 09/27/2000 | EP1038056A1 A method of growing a buffer layer using molecular beam epitaxy |
| 09/27/2000 | EP1038055A1 Method and apparatus for growing high purity single crystal silicon carbide |
| 09/26/2000 | US6123768 Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films |
| 09/21/2000 | WO2000055398A1 Method of crystal growth, method of forming fine semiconductor structure, semiconductor device, and system |
| 09/21/2000 | WO2000022195A3 Production of bulk single crystals of silicon carbide |
| 09/20/2000 | EP1037268A1 METHOD FOR SYNTHESIZING SINGLE CRYSTAL AlN THIN FILMS OF LOW RESISTANT n-TYPE AND LOW RESISTANT p-TYPE |
| 09/20/2000 | EP1036863A1 Method for synthesizing n-type diamond having low resistance |
| 09/13/2000 | EP1034324A1 Low vacuum vapor process for producing epitaxial layers |
| 09/06/2000 | EP1032727A1 Thin films having a rock-salt-like structure deposited on amorphous surfaces |
| 09/05/2000 | US6113692 Apparatus and process for the formation of monocrystalline silicon carbide (SiC) on a nucleus |
| 09/05/2000 | US6113690 Method of preparing crystalline alkaline earth metal oxides on a Si substrate |
| 08/29/2000 | US6110279 Forming cubic silicon carbide single-crystal layer, which functions as seed crystal, on silicon single-crystal substrate; forming alpha-type single-crystal silicon carbide on cubic silicon carbide single-crystal layer by sublimation |
| 08/24/2000 | WO2000049207A1 Method for growing an $g(a)-sic volume single crystal |
| 08/24/2000 | WO2000048725A1 Method for preparation of libraries using a combinatorial molecular beam epitaxy (combe) apparatus |
| 08/22/2000 | US6106616 Layer crystal structure oxide, production method thereof, and memory element using the same |
| 08/15/2000 | US6103023 Thin films of quasicrystalline alloys, their preparation and their uses |
| 08/09/2000 | EP1026290A1 Method and apparatus for producing silicon carbide single crystal |
| 08/08/2000 | US6099917 Pretreatment of oxide substrates and radiation reactive n2+ ion beams on oxide substrates |
| 08/08/2000 | US6099640 Molecular beam epitaxial growth method |
| 08/01/2000 | US6096434 The conductive oxide thin film is an epitaxial film composed of strontium ruthenate formed on silicon substrate |
| 07/25/2000 | US6093242 Anisotropy-based crystalline oxide-on-semiconductor material |
| 07/20/2000 | WO2000041808A1 Carbide and oxycarbide based compositions and nanorods |
| 07/20/2000 | CA2359336A1 Carbide and oxycarbide based compositions and nanorods |
| 07/19/2000 | EP1020898A2 Semiconductor crystal, fabrication method thereof, and semiconductor device |
| 07/19/2000 | EP1019568A1 Apparatus and process for crystal growth |
| 07/19/2000 | CN1260594A Semiconductor crystal, its producing method and semiconductor device |
| 07/13/2000 | WO2000022204A3 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 07/06/2000 | WO2000039372A1 Method for growing single crystal of silicon carbide |
| 07/06/2000 | WO2000039371A1 Method of manufacturing single-crystal silicon carbide |
| 07/04/2000 | US6083884 A-axis high temperature superconducting films with preferential in-plane alignment |
| 06/29/2000 | DE19859429A1 Verfahren zur Herstellung epitaktischer Silizium-Germaniumschichten Process for the preparation of epitaxial silicon-germanium layers |
| 06/28/2000 | EP1014431A2 Method of fabricating epitaxial silicon-germanium layers |
| 06/28/2000 | EP0819187B1 Process for growing an epitaxial film on an oxide surface and product |
| 06/22/2000 | CA2293060A1 Process for producing epitactic-silicon germanium layers |
| 06/20/2000 | US6077344 Sol-gel deposition of buffer layers on biaxially textured metal substances |
| 06/14/2000 | EP1007770A2 Molecular beam epitaxy effusion cell |
| 06/14/2000 | CN2382726Y Crystallizing room of adjustable vapour phase diffusion for protein crystal growth |
| 06/13/2000 | US6074990 Superconducting garnet thin film system |
| 06/13/2000 | US6074768 Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films |
| 06/13/2000 | US6074485 Crystal growth observing apparatus using a scanning tunneling microscope |
| 06/08/2000 | WO2000033388A1 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| 06/07/2000 | EP1005639A1 Apparatus and method for in-situ thickness and stoichiometry measurement of thin films |
| 06/06/2000 | US6071338 Method for crystal growth of multi-element oxide thin film containing bismuth as constituent element |
| 05/31/2000 | CN1255170A Process of diamond growth from C70 |
| 05/31/2000 | CN1254770A Enclosing method of ampoule for growing crystal by sublimation method |
| 05/25/2000 | DE19852585A1 Manufacture method of manometer thick wire or network, or cluster on substrate surface for opto-electronic components |
| 05/24/2000 | EP1002140A1 A phosphorus effusion cell for producing molecular beams to be deposited on a substrate |
| 05/16/2000 | US6063201 Effusion cell assembly for epitaxial apparatus |
| 05/16/2000 | US6063185 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| 05/10/2000 | EP0830218A4 Structures having enhanced biaxial texture and method of fabricating same |
| 05/02/2000 | US6057557 Semiconductor substrate semiconductor device and liquid crystal display device |
| 05/02/2000 | US6056820 Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
| 04/25/2000 | US6053981 Effusion cell and method of use in molecular beam epitaxy |
| 04/20/2000 | WO2000022204A2 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 04/20/2000 | WO2000022203A2 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 04/20/2000 | WO2000022202A1 p-TYPE ZnO SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME |
| 04/20/2000 | WO2000022195A2 Production of bulk single crystals of silicon carbide |
| 04/12/2000 | EP0993027A1 Method for manufacturing compound semiconductors |
| 04/11/2000 | US6048813 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
| 04/11/2000 | US6048398 Device for epitaxially growing objects |
| 04/04/2000 | US6045613 Production of bulk single crystals of silicon carbide |
| 03/28/2000 | US6043141 Forming a lattice comprising hg and a group vi material wherein a cation-rich condition is established at the surface; generating an elemental group v flux by evaporating an elemental group v material |
| 03/23/2000 | WO2000015884A1 Combinatorial molecular layer epitaxy device |
| 03/23/2000 | WO2000015883A1 Effusion cell and method of use in molecular beam epitaxy |
| 03/14/2000 | US6036774 Method of producing metal oxide nanorods |
| 03/09/2000 | WO2000012784A1 Method for producing a defect-free monocrystalline silicon carbide layer |
| 03/09/2000 | DE19842109A1 Apparatus for growing silicon carbide monocrystals comprises shielding element which is movable along the axis of symmetry of the apparatus for adjustment of a local temperature field |
| 03/09/2000 | DE19838945A1 Verfahren zur Herstellung einer defektarmen, einkristallinen Silizium-Carbid-Schicht A process for preparing a low-defect, monocrystalline silicon carbide layer |
| 03/08/2000 | CN1050158C Method and apparatus for treating surface |
| 03/07/2000 | US6033783 Ultrafine Al particle and production method thereof |
| 03/07/2000 | US6033471 Metallic thin flim and method of manufacturing the same, and surface acoustic wave device using the metallic thin film and the method thereof |
| 03/07/2000 | US6032611 Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device |
| 03/02/2000 | DE19839363A1 Composition graded material film, especially digital graded molecular beam epitaxy or chemical vapor deposition semiconductor film, is deposited by subdividing the film depth profile into regions of homogeneous preselected composition |
| 02/29/2000 | US6030458 Cell for providing pure phosphorus vapor from solid phosphorus, where vacuum jacket encloses and supports an inner compartment containing a red phosphorus crucible, a condensing crucible for white phosphorus, a heater, a cracking tube |
| 02/23/2000 | CN1245540A Method for preparation of metal intercalated fullerene-like metal chalcogenides |
| 02/22/2000 | US6027564 Placing a crystallographically oriented target surface of a substrate, including contaminant materials in high pressure and heating the substrate surface to greater than the threshold temperature for forming epitaxial layer |
| 02/17/2000 | WO2000008691A1 Zinc oxide films containing p-type dopant and process for preparing same |
| 02/16/2000 | EP0979319A1 Method of making a low resistivity silicon carbide boule |
| 02/15/2000 | US6025289 Single crystals doped with nitrogen and aluminum; synthetic gemstones having extraordinary toughness and hardness, and brilliance meeting or exceeding that of diamond |
| 02/08/2000 | US6023082 Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material |
| 02/08/2000 | US6022832 Low vacuum vapor process for producing superconductor articles with epitaxial layers |
| 02/08/2000 | US6022458 Method of production of a semiconductor substrate |
| 02/08/2000 | US6022410 Molecular beam epitaxy chamber |
| 01/27/2000 | WO2000004212A1 Method and device for producing at least one silicon carbide monocrystal |
| 01/27/2000 | WO2000004211A1 METHOD FOR GROWING SiC MONOCRYSTALS |
| 01/20/2000 | DE19917601A1 Silicon carbide single crystal production apparatus comprises a crucible with one or more heat flux control inserts of non-reactive vitreous carbon |
| 01/20/2000 | DE19833755A1 Multiple silicon carbide single crystal growth apparatus has a common reaction chamber with seed crystal holders arranged above one another to provide reproducible growth conditions and controlled growth rates |
| 01/20/2000 | DE19827198A1 Single crystal aluminum nitride layers, useful as high frequency SAW filters and buffer layers for electronic and optoelectronics component deposition, are grown on silicon using silicon surface construction and reconstruction steps |
| 01/18/2000 | US6015459 Method for doping semiconductor materials |
| 01/13/2000 | WO2000002240A1 METHOD FOR SYNTHESIZING SINGLE CRYSTAL AlN THIN FILMS OF LOW RESISTANT n-TYPE AND LOW RESISTANT p-TYPE |
| 01/13/2000 | WO2000001867A1 Method for synthesizing n-type diamond having low resistance |
| 01/11/2000 | US6013130 Process and device for the production of epitaxial layers |
| 01/11/2000 | US6013129 Production of heavily-doped silicon |