| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 06/12/2001 | US6245451 Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
| 06/07/2001 | WO2001040536A1 Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof |
| 06/05/2001 | US6241821 Fabricating semiconductor structure via forming amorphous silicon dioxide on surface of silicon substrate, providing alkaline earth metal (barium, strontium) on amorphous silicon dioxide, then heating to form interface |
| 05/30/2001 | EP1103076A1 Zinc oxide films containing p-type dopant and process for preparing same |
| 05/22/2001 | US6235402 Multilayer |
| 05/17/2001 | WO2001008233A3 Joint high temperature superconducting coated tapes |
| 05/16/2001 | EP1099014A1 Method and device for producing at least one silicon carbide monocrystal |
| 05/15/2001 | US6232242 Method of forming a crystalline insulation layer on a silicon substrate |
| 05/10/2001 | US20010000864 Disposing solid silicon (Si) in first temperature area, and a seed crystal of silicon carbide (SiC) at second higher temperature; evaporating Si, generating SiC gas and causing SiC to reach seed crystal; use as quality substrate |
| 05/10/2001 | DE19954838C1 Process for the epitaxial production of semiconductor nanostructures comprises adding halogens during layer growth and/or during interruptions of the layer growth of the nanostructure and/or the covering layer over |
| 05/10/2001 | DE10050767A1 Single crystal manufacturing apparatus has seed crystal pasting material provided at predetermined intervals from cover |
| 05/08/2001 | US6229250 Metallic thin film and method of manufacturing the same, and surface acoustic wave device using the method thereof |
| 05/01/2001 | US6224669 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon |
| 05/01/2001 | CA2210033C A method of suppressing convection in a fluid in a cylindrical vessel |
| 04/26/2001 | WO2001029293A1 Polycrystalline thin film and its production, and oxide superconductor and method for its production |
| 04/24/2001 | US6221154 Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD) |
| 04/19/2001 | WO2001027361A1 Method and apparatus for growing silicon carbide crystals |
| 04/18/2001 | CN1291825A Method of producing piezoelectric film with orientation |
| 04/17/2001 | US6218680 Semi-insulating silicon carbide without vanadium domination |
| 04/17/2001 | US6217843 Heating metal compound with water in vacuum |
| 04/17/2001 | US6217842 Single crystal SIC and method of producing the same |
| 04/12/2001 | WO2001026165A2 Method and apparatus for forming buffer layers |
| 04/12/2001 | WO2001026164A2 Control of oxide layer reaction rates |
| 04/10/2001 | US6214712 Heating semiconductor surface and introducing hydrogen gas into high vacuum environment to develop conditions favorable for growing desired metal oxide, yet unfavorable for formation of any native oxides |
| 04/10/2001 | US6214108 Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same |
| 04/05/2001 | WO2001023648A1 Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam |
| 04/05/2001 | WO2000022204A9 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 04/04/2001 | EP0879305B1 Growth of colorless silicon carbide crystals |
| 03/29/2001 | WO2000033388A9 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| 03/29/2001 | DE19946182A1 Production of carbon nanotubes used in microelectronics comprises focussing laser pulses onto surface of carbon-containing material, vaporizing and decomposing carbon-containing molecules and growing carbon nanotubes |
| 03/27/2001 | US6206969 Method and apparatus for fabricating semiconductor |
| 03/15/2001 | WO2001018872A1 SiC WAFER, SiC SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SiC WAFER |
| 03/15/2001 | WO2001018287A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 03/15/2001 | WO2001018286A1 Sic SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 03/13/2001 | US6200917 Colorless silicon carbide gemstones |
| 03/08/2001 | WO2001016411A1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF |
| 03/07/2001 | EP1081256A2 ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal |
| 03/07/2001 | CN1062917C Metallic organics vapour epitaxial growth technique for In-Ga-N monocrystal film |
| 03/06/2001 | US6197391 Pyrolytic boron nitride container and manufacture thereof |
| 02/28/2001 | EP1077764A1 Method for preparation of libraries using a combinatorial molecular beam epitaxy (combe) apparatus |
| 02/28/2001 | EP1059976A4 Dynamically controlled crystallization method and apparatus and crystals obtained thereby |
| 02/27/2001 | US6194353 Substrate is heated and an oxidizing gas is locally supplied to the proximity of the substrate so that the pressure of the proximity of the substrate becomes 6 times 10sup6 to 8 times 10sup5 torr at a background pressure |
| 02/27/2001 | US6193797 Method of making SiC single crystal and apparatus for making SiC single crystal |
| 02/22/2001 | WO2001012884A1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 02/22/2001 | DE19938631A1 Production of thin single crystalline layers or layer system by depositing on a substrate comprises deviating the surface normals from the specified directions of the substrate to produce steps |
| 02/20/2001 | US6190752 Thin films having rock-salt-like structure deposited on amorphous surfaces |
| 02/20/2001 | US6190634 Suitable for electrodes in nanoscale batteries and for high density magnetic recording media; as reinforcements in metal, ceramic, and organic polymer matrix composites |
| 02/15/2001 | WO2001011428A1 Superconductor articles, compositions, and methods for making same |
| 02/13/2001 | CA2230262C Silicon carbide gemstones |
| 02/08/2001 | WO2001009412A1 Material for raising single crystal sic and method of preparing single crystal sic |
| 02/06/2001 | US6184144 Methods for growing defect-free heteroepitaxial layers |
| 02/06/2001 | US6183552 Vapor deposition |
| 02/01/2001 | WO2001008236A1 Coated conductor thick film precursor |
| 02/01/2001 | WO2001008235A1 Methods and compositions for making a multi-layer article |
| 02/01/2001 | WO2001008233A2 Joint high temperature superconducting coated tapes |
| 02/01/2001 | WO2001008232A2 Surface conditioning process for making multi-layer articles |
| 02/01/2001 | WO2001008231A2 Methods of making a superconductor |
| 02/01/2001 | WO2001008170A2 Enhanced purity oxide buffer layer formation |
| 02/01/2001 | WO2001008169A2 Superconductor coated conductors with reduced a.c. loss |
| 02/01/2001 | CA2378833A1 Enhanced high temperature coated superconductors |
| 01/31/2001 | EP1073197A2 Method for producing oriented piezoelectric films |
| 01/30/2001 | US6180570 Biaxially textured articles formed by plastic deformation |
| 01/29/2001 | CA2314302A1 Method for producing oriented piezoelectric films |
| 01/18/2001 | WO2001004943A1 Multilayered body, method for fabricating multilayered body, and semiconductor device |
| 01/18/2001 | WO2001004391A1 Sublimation growth method for an sic monocrystal with growth-pressure heating |
| 01/18/2001 | WO2001004390A1 Seed crystal holder with a lateral border for an sic seed crystal |
| 01/18/2001 | WO2001004389A1 Sic monocrystal sublimation growth device with a film-covered crucible |
| 01/18/2001 | DE19931332A1 Apparatus for producing a silicon carbide single crystal comprises a double-walled crucible and an inductive heater |
| 01/16/2001 | US6174463 Layer crystal structure oxide comprising bismuth, first element selected from sodium, potassium, calcium, barium, strontium, lead and bismuth, second element selected from iron, titanium, niobium, tantalum and tungsten |
| 01/09/2001 | US6172008 Process for preparing high crystallinity oxide thin film |
| 01/02/2001 | CA2093729C Process for preparing superconducting thin film formed of oxide superconductor material |
| 12/28/2000 | WO2000079570A2 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 12/20/2000 | EP1061564A2 MBE growth of group III-nitride semiconductor layers |
| 12/20/2000 | EP1059976A1 Dynamically controlled crystallization method and apparatus and crystals obtained thereby |
| 12/19/2000 | US6162300 Effusion cell |
| 12/19/2000 | US6162296 Method and apparatus for manufacturing chalcopyrite semiconductor thin films |
| 12/12/2000 | US6159610 Buffer layers on metal surfaces having biaxial texture as superconductor substrates |
| 12/05/2000 | US6156376 Epitaxially depositing a buffer layer consisting of y2o3 and/or re2o3 |
| 11/30/2000 | WO2000071787A2 Semi-insulating silicon carbide without vanadium domination |
| 11/30/2000 | WO2000071776A1 Preparation of laser deposited oriented films and membranes |
| 11/28/2000 | US6153268 Bombarding a target comprising a piezoelectric material; dislodged particles from the target are ionized and then electrostatically attracted to the surface of a substrate where they are neutralized and deposited in an ordered way |
| 11/28/2000 | US6152074 Deposition of a thin film on a substrate using a multi-beam source |
| 11/22/2000 | EP1054082A1 P-type group II-VI compound semiconductor crystals, growth method for such crystals, and semiconductor device made of such crystals |
| 11/21/2000 | US6150034 Biaxially textured article comprising a substrate of nickel or copper, the substrate surface exhibiting biaxial texture; and a buffer layer of yttrium oxide (y2o3) or ytterbium oxide (yb2o3) epitaxially disposed on the textured surface |
| 11/16/2000 | WO2000068981A1 Method for the growth of a thin silicon oxide layer on a silicon substrate surface and double reactor machine |
| 11/16/2000 | DE19922051A1 New tungsten carbide crystal, useful for producing hard metal tools, high strength compounds and hard material coatings, has similar numbers of tungsten and carbon atoms at body-centered cubic or similar lattice sites |
| 11/16/2000 | DE10009876A1 Single crystal thin film formation method for semiconductor industries, involves growing single crystal thin film on exposed surface of amorphous thin film by nuclear or molecular beam of specific incidence angle |
| 11/15/2000 | EP1051740A1 Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers |
| 11/14/2000 | US6146505 Sputtering method for producing layered aluminium fine particles and use thereof |
| 11/14/2000 | US6146458 Growing a layer of group iii nitride material on a substrate |
| 11/14/2000 | US6146135 Oxide film forming method |
| 11/07/2000 | US6143072 Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate |
| 10/31/2000 | US6139643 Effusion cell for Si and molecular beam epitaxy system |
| 10/31/2000 | US6139631 Crystal growth method and apparatus |
| 10/31/2000 | US6139629 Group III-nitride thin films grown using MBE and bismuth |
| 10/31/2000 | CA2195486C Metallic thin film and method of manufacturing the same, and surface acoustic wave device using the metallic thin film and the method thereof |
| 10/26/2000 | DE19918647A1 Zinc selenide bulk crystal, useful as a substrate for an LED or laser diode, is produced by gaseous phase growth with addition of a group V element as p-type dopant and heat treatment at a high selenium partial pressure |
| 10/24/2000 | US6136093 Method of making GaN single crystal and apparatus for making GaN single crystal |
| 10/19/2000 | WO2000061839A1 Cubic (zinc-blende) aluminum nitride and method of making same |
| 10/12/2000 | WO2000060146A1 A crystalline oxide-on-semiconductor structure and a generic process for preparing the structure |