| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 05/20/1998 | EP0842913A1 Pyrolytic boron nitride container and manufacture thereof |
| 05/19/1998 | US5753039 Irradiating a nitrogen gas beam, vapor depositing, crystallizing and doping on heated object |
| 05/06/1998 | EP0839925A2 Deposition of a thin film on a substrate using a multi-beam source |
| 05/05/1998 | US5746827 First growth stage under isothermal conditions and the second a temperature gradient |
| 05/05/1998 | CA2101286C Oxide superconducting film manufacturing apparatus |
| 04/21/1998 | US5741377 Preparing biaxially textured metal alloy article; superconductors |
| 04/15/1998 | EP0799330A4 A method and apparatus for varying the flux of a molecular beam produced by a molecular beam epitaxy cell |
| 04/14/1998 | US5739086 Structures having enhanced biaxial texture and method of fabricating same |
| 04/07/1998 | US5735950 Method for producing a precise alloy composition from input variables under nonlinear incorporation conditions |
| 04/02/1998 | WO1998013300A1 Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
| 03/31/1998 | US5733369 Method for forming crystal |
| 03/25/1998 | EP0830218A1 Structures having enhanced biaxial texture and method of fabricating same |
| 03/24/1998 | US5731046 Fabrication of diamond and diamond-like carbon coatings |
| 03/17/1998 | US5728421 Forming a template layer by vapor deposition on substrate, depositing ferrite on annealed template |
| 03/11/1998 | CN1037701C Boron nitride crucible and process for producing same |
| 03/10/1998 | US5725674 Device and method for epitaxially growing gallium nitride layers |
| 03/05/1998 | WO1998008780A1 Unibody crucible and effusion source employing such a crucible |
| 03/04/1998 | EP0826131A1 Unibody crucible |
| 03/03/1998 | US5723880 Thin film 2H α-SiC |
| 03/03/1998 | US5723391 Silicon carbide gemstones |
| 02/17/1998 | US5718760 Growth of colorless silicon carbide crystals |
| 02/12/1998 | WO1998005807A1 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
| 02/11/1998 | EP0823498A1 Process for producing a heavily nitrogen doped ZnSe crystal |
| 02/10/1998 | US5717157 Ferroelectric thin film and method of manufacturing the same |
| 02/10/1998 | US5716450 Growing method of gallium nitride related compound semiconductor crystal and gallium nitride related compound semiconductor device |
| 02/03/1998 | US5714765 Method of fabricating a compositional semiconductor device |
| 02/03/1998 | US5714008 Molecular beam epitaxy source cell |
| 01/27/1998 | US5712227 Substrate having a superconductor layer |
| 01/27/1998 | US5711813 Epitaxial crystal growth apparatus |
| 01/21/1998 | EP0819785A1 A method of suppressing convection in a fluid in a cylindrical vessel |
| 01/21/1998 | EP0819782A1 Process of forming a thin film by laser ablation |
| 01/21/1998 | EP0819187A1 Process for growing an epitaxial film on an oxide surface and product |
| 01/21/1998 | EP0819186A1 Quasi-crystalline alloy thin films, their preparation and use |
| 01/13/1998 | US5707900 Method of heat-treating semiconductor crystal of a group II-group VI compound |
| 01/13/1998 | US5707446 Device for producing SiC single crystals |
| 01/07/1998 | EP0817284A1 Superconducting structure |
| 12/29/1997 | EP0814505A1 Optical in-situ monitoring of a process element |
| 12/16/1997 | US5698168 Cylindrical bulb constructed of pyrolytic boron nitride, baffle, connector of refractory metal, non-boron nitride tube, radio frequency source |
| 12/10/1997 | EP0811708A2 Single crystal of nitride and process for preparing it |
| 12/10/1997 | EP0811084A1 Process of diamond growth from c 70? |
| 12/03/1997 | EP0810308A2 An ultrafine a1 particle and production method thereof |
| 12/03/1997 | EP0810307A2 Method of forming a compound semiconductor film |
| 12/03/1997 | EP0809721A1 Method and apparatus for producing single crystal carbon films |
| 12/02/1997 | US5693173 Effusion cell as atomic hydrogen source for molecular beam epitaxy |
| 12/02/1997 | US5693140 Process for growing a film epitaxially upon a MgO surface |
| 11/25/1997 | US5690737 Process for forming epitaxial BaF2 on GaAs |
| 11/12/1997 | EP0806499A1 Method and apparatus for fabricating semiconductor |
| 11/11/1997 | US5686738 Highly insulating monocrystalline gallium nitride thin films |
| 11/11/1997 | US5686351 Semimetal-semiconductor heterostructures and multilayers |
| 11/04/1997 | US5683507 Apparatus for growing large silicon carbide single crystals |
| 10/29/1997 | EP0803594A1 Crystal growing substrate |
| 10/15/1997 | EP0801155A1 Process and apparatus for forming single crystal silicon carbide (SiC) on a seed |
| 10/08/1997 | EP0799330A1 A method and apparatus for varying the flux of a molecular beam produced by a molecular beam epitaxy cell |
| 10/07/1997 | US5674813 Process for preparing layered structure including oxide super conductor thin film |
| 09/17/1997 | EP0795050A1 Process and device for sublimation growing silicon carbide monocrystals |
| 09/16/1997 | US5667587 Apparatus for growing silicon carbide crystals |
| 09/03/1997 | EP0793281A2 Electro-magnetic transducers |
| 09/02/1997 | US5662742 Equipment for manufacturing a semiconductor device using a solid source |
| 08/28/1997 | WO1997031140A1 Method of epitaxial growth of monocrystalline '3a' group metal nitrides |
| 08/28/1997 | WO1997031139A1 Metal oxide nanorods |
| 08/07/1997 | WO1997028297A1 Growth of colorless silicon carbide crystals |
| 08/05/1997 | US5653801 Crystallizing the aluminum intermetallic crystal and vapor depositing the dopes |
| 07/31/1997 | WO1997027350A1 Silicon carbide monocrystal growth |
| 07/23/1997 | EP0785299A1 Metallic thin film and method of manufacturing the same, and surface acoustic wave device using the metallic thin film and the method thereof |
| 07/22/1997 | US5650376 High superconductive critical temperature, neodymium, barium, copper oxide |
| 07/16/1997 | EP0656870A4 Methods and apparati for producing fullerenes. |
| 07/15/1997 | US5648127 Method of applying, sculpting, and texturing a coating on a substrate and for forming a heteroepitaxial coating on a surface of a substrate |
| 07/15/1997 | US5647917 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
| 07/02/1997 | EP0781355A1 Epitaxially layered structure |
| 07/01/1997 | US5643641 Surface treatment of polymer substrates, carbon, vaporization and reaction to modify surface structure |
| 06/18/1997 | EP0779643A2 Plasma display panel suitable for high-quality display and production method |
| 06/10/1997 | US5637530 II-VI compound semiconductor epitaxial layers having low defects, method for producing and devices utilizing same |
| 06/03/1997 | US5635453 Having plurality of epitaxially grown, contiguously interfacing perovskite compound buffer layers between garnet substrate and high temperature superconducting layer |
| 06/03/1997 | US5635243 Forming a coating on a substrate by radiating to immobilize, diffuse, vaporize and react constiuent elements or alter its physical structure (carbide to diamond on steel); cutting tool inserts |
| 05/29/1997 | WO1997019303A1 Temperature controlled chuck for vacuum processing |
| 05/27/1997 | US5633194 Cleaning; applying vacuum; heating; growing thin epitaxial film |
| 05/27/1997 | US5633192 Method for epitaxially growing gallium nitride layers |
| 05/21/1997 | EP0650465A4 Conversion of fullerenes to diamond. |
| 05/13/1997 | US5628834 Surfactant-enhanced epitaxy |
| 05/09/1997 | WO1997016246A1 Unibody gas plasma source technology |
| 05/02/1997 | EP0770713A1 Equipment for manufacturing a semiconductor device using a solid source |
| 05/02/1997 | EP0770700A1 Process for formation of oxide thin film |
| 04/29/1997 | US5625204 Compound semiconductors and a method for thin film growth |
| 04/27/1997 | CA2188902A1 Process for formation of oxide thin film |
| 04/24/1997 | DE19538717A1 Diamond crystals doped with foreign atoms or ions |
| 04/17/1997 | WO1997013892A1 Improved method for the preparation of nanocrystalline diamond thin films |
| 04/17/1997 | WO1997013891A1 METHOD OF MANUFACTURING EPITAXIAL LAYERS OF GaN OR Ga(A1,In)N ON SINGLE CRYSTAL GaN AND MIXED Ga(A1,In)N SUBSTRATES |
| 04/17/1997 | WO1997009470A3 Silicon carbide gemstones |
| 04/16/1997 | EP0768707A2 Molecular beam epitaxy process with growing layer thickness control |
| 04/15/1997 | US5620512 Diamond film growth from fullerene precursors |
| 04/10/1997 | WO1997013013A1 A method for epitaxially growing objects and a device for such a growth |
| 04/10/1997 | WO1997013012A1 A method for epitaxially growing objects and a device for such a growth |
| 04/10/1997 | WO1997013011A1 A device for heat treatment of objects and a method for producing a susceptor |
| 04/02/1997 | EP0766297A2 Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser |
| 04/01/1997 | US5616181 MBE apparatus and gas branch piping apparatus |
| 04/01/1997 | US5616180 Aparatus for varying the flux of a molecular beam |
| 04/01/1997 | US5616178 Method for growth of II-VI compound semiconductors |
| 03/25/1997 | US5614258 Process of diamond growth from C70 |
| 03/18/1997 | US5611955 Semiconductors |
| 03/13/1997 | WO1997009470A2 Silicon carbide gemstones |