Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
11/2003
11/13/2003WO2003068699A8 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/13/2003WO2002103089A3 Heating of an effusion cell for molecular beam epitaxy
11/13/2003US20030211948 Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom
11/13/2003US20030211741 Dielectric thin film, method for making the same and electric components thereof
11/11/2003US6645639 Epitaxial oxide films via nitride conversion
11/06/2003US20030207767 Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof
11/06/2003US20030207132 The present invention relates to oxides on suitable substrates, as converted from nitride precursors. Oxidation of compounds for fabrication of a ferro-electric device.
11/06/2003US20030207125 Base substrate for crystal growth and manufacturing method of substrate by using the same
11/06/2003US20030205194 Process for manufacturing a semiconductor device
11/04/2003US6641938 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties.
10/2003
10/29/2003EP0853690B1 Silicon carbide gemstones
10/28/2003US6639247 Semi-insulating silicon carbide without vanadium domination
10/28/2003US6638846 Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device
10/28/2003US6638569 Apparatus and method for coating substrates with vacuum depositable materials
10/23/2003US20030197155 Having a reduced amount of hetero-phase precipitate as an impurity; bandpass filters used for a base station receiver in a mobile telecommunication system; controlled heating of the mercury gas independent of the pressure control
10/22/2003EP1354987A1 Silicon carbide single crystal, and method and apparatus for producing the same
10/22/2003CN1450580A Field emission nano material capable of being used in plane display
10/16/2003WO2003085175A1 Seed crystal of silicon carbide single crystal and method for producing ingot using same
10/16/2003WO2003023817A3 Process for forming semiconductor quantum dots with superior structural and morphological stability
10/15/2003CN1449458A Thin-film metallic oxide structure and process for fabricating same
10/14/2003US6632539 Polycrystalline thin film and method for preparing thereof, and superconducting oxide and method for preparation thereof
10/09/2003WO2003083902A2 Thermal production of nanowires
10/09/2003WO2003083177A2 Influence of surface geometry on metal properties
10/09/2003WO2003082566A1 Buffer layers on metal alloy substrates for superconducting tapes
10/09/2003WO2003082482A1 Method for producing boride thin films
10/08/2003EP1194618B1 Sublimation growth method for an sic monocrystal with growth-pressure heating
10/08/2003CN1123916C Application of YB2 monocrystal
10/08/2003CN1123654C Indium-doped barium-titanate material and its prepn. method
10/08/2003CN1123653C Indium-doped strontium titanate material and its prepn. process
10/02/2003WO2003081730A2 Powder metallurgy tungsten crucible for aluminum nitride crystal growth
10/02/2003US20030186088 Crystal-growth substrate and a zno-containing compound semiconductor device
10/02/2003US20030183172 Vaporiser for generating feed gas for an arc chamber
10/01/2003EP1349203A2 A crystal-growth substrate and a ZnO-containing compound semiconductor device
10/01/2003CN1445821A Forming method of ZnO film and ZnO semiconductor layer, semiconductor element and manufacturing method thereof
10/01/2003CN1445817A Method and device for epitaxial coating semiconductor chip, and semiconductor chip opitaxial coated
09/2003
09/30/2003US6626995 Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof
09/25/2003WO2003012826A3 Monitoring and controlling perovskite oxide film growth
09/25/2003US20030178102 Method of depositing epitaxial layers on a substrate
09/24/2003EP1346085A1 Methods and apparatus for producing m'n based materials
09/24/2003CN1444295A Device and method for mfg. GaN base
09/23/2003US6624441 Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
09/18/2003WO2003077311A1 Method and resulting structure for manufacturing semiconductor substrate
09/18/2003WO2003055583A3 Modified carbide and oxycarbide containing catalysts
09/18/2003US20030173559 Growing smooth semiconductor layers
09/17/2003EP1343927A2 Gallium nitride materials and methods for forming layers thereof
09/11/2003US20030168003 Method and apparatus for producing large, single-crystals of aluminum nitride
09/10/2003EP1342820A1 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby
09/10/2003EP1342275A1 Epitaxial oxide films via nitride conversion
09/10/2003EP1342261A1 Method for producing a positively doped semiconductor with large forbidden band
09/10/2003CN1441854A Process for production of super thin protective coatings
09/09/2003US6617574 Apparatus for in-situ thickness and stoichiometry measurement of thin films
09/09/2003US6617283 Single lanthanum metal oxide epitaxial buffer layer disposed on and in contact with said surface of said substrate, and an electromagnetically active layer disposed on and in contact with said single epitaxial buffer layer.
09/09/2003US6617235 Method of manufacturing Group III-V compound semiconductor
09/09/2003US6617183 Method for forming p-type semiconductor film and light emitting device using the same
09/09/2003US6617060 Gallium nitride materials and methods
09/03/2003EP1341222A1 A method for producing a device having a semiconductor layer on a lattice mismatched substrate
09/03/2003EP1339637A1 A process for the synthesis of nanotubes of transition metal dichalcogenides
08/2003
08/28/2003WO2003071595A1 LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM
08/28/2003WO2002103090A3 A method of growing a semiconductor layer
08/27/2003EP1337699A1 Tool and method for in situ vapor phase deposition source material reloading and maintenance
08/26/2003US6610548 Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
08/26/2003US6610421 Spin electronic material and fabrication method thereof
08/26/2003US6610141 For use in electrically excited devices such as light emitting devices (LEDs), laser diodes (LDs), field effect transistors (FETs), photodetectors, and transducers
08/21/2003WO2003069677A1 Structure, method of manufacturing the same, and device using the same
08/21/2003WO2003068699A1 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
08/21/2003WO2003036697A3 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
08/21/2003US20030157376 III-V nitride substrate boule and method of making and using the same
08/14/2003WO2003067644A1 Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
08/13/2003CN1436365A Preparation method of coating of gallium nitride
08/12/2003US6605151 Oxide thin films and composites and related methods of deposition
08/07/2003US20030146433 Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
08/07/2003US20030146431 Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same
08/07/2003US20030145784 Cubic (zinc-blende) aluminum nitride and method of making same
08/07/2003US20030145783 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
08/06/2003EP1333462A2 Plasma display panel suitable for high-quality display and production method
07/2003
07/31/2003WO2003063226A2 Oxide layer on a gaas-based semiconductor structure and method of forming the same
07/31/2003US20030144150 Substrate structure for growth of highly oriented and/or epitaxial layers thereon
07/31/2003US20030143438 Buffer architecture for biaxially textured structures and method of fabricating same
07/31/2003US20030141176 Cracker apparatus
07/30/2003EP1330561A2 Integrated phase separator for ultra high vacuum system
07/30/2003CN1432660A Vaporizer boat for lining coating device
07/29/2003US6599492 Onion-like carbon film and its production
07/29/2003US6599361 GaN selective growth on SiC substrates by ammonia-source MBE
07/24/2003WO2003060203A1 Metal strip for epitaxial coating and method for production thereof
07/24/2003US20030137018 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same
07/24/2003US20030136333 Preparation method of a coating of gallium nitride
07/24/2003US20030136331 Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
07/24/2003CA2472185A1 Metal strip for epitaxial coating and method for producing such a strip
07/23/2003EP1329913A1 Magnetic semiconductor material and method for preparation thereof
07/22/2003US6596081 Dynamically controlled crystallization method and apparatus and crystals obtained thereby
07/22/2003US6596079 III-V nitride substrate boule and method of making and using the same
07/22/2003US6596078 Method of producing oxide whiskers, oxide whiskers, and photoelectric conversion apparatus
07/17/2003US20030132477 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device
07/17/2003US20030132433 Semiconductor structures including a gallium nitride material component and a silicon germanium component
07/16/2003EP1327699A1 Evaporator boat for a substrate-coating apparatus
07/15/2003US6592839 Tailoring nanocrystalline diamond film properties
07/15/2003US6592831 Vaporization and cracker cell method and apparatus
07/10/2003WO2003055583A2 Modified carbide and oxycarbide containing catalysts
07/10/2003US20030129087 Accumulation, classification of proteins
07/10/2003US20030127044 Powder metallurgy tungsten crucible for aluminum nitride crystal growth
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