| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 12/07/2005 | EP1602752A1 AlGalnN single-crystal wafer |
| 12/07/2005 | EP1602131A1 Via and trench structures for semiconductor substrates bonded to metallic substrates |
| 12/07/2005 | EP1601452A1 Method for making synthetic gems comprising elements recovered from complete or partial human or animal remains and the product thereof |
| 12/07/2005 | EP1233085B1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 12/01/2005 | US20050266686 Method of substrate surface treatment for RRAM thin film deposition |
| 12/01/2005 | US20050266267 Metallic nanowire and method of making the same |
| 12/01/2005 | US20050263065 Vapor assisted growth of gallium nitride |
| 11/30/2005 | EP1600530A1 (001)-orientated perovskite film formation method and device having perovskite film |
| 11/30/2005 | EP1440187A4 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 11/29/2005 | US6969426 Forming improved metal nitrides |
| 11/24/2005 | WO2005112079A1 Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite |
| 11/24/2005 | WO2005111279A2 Gan bulk growth by ga vapor transport |
| 11/24/2005 | US20050257734 Formation of single-crystal silicon carbide |
| 11/23/2005 | EP1598450A2 B-Ga2o3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2o3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD |
| 11/17/2005 | WO2005071133A3 Vacuum deposition method and sealed-type evaporation source apparatus for vacuum deposition |
| 11/17/2005 | US20050255672 Method and resulting structure for manufacturing semiconductor substrates |
| 11/17/2005 | US20050252443 Epitaxy layer and method of forming the same |
| 11/16/2005 | EP1595979A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same |
| 11/16/2005 | EP1595280A2 Buffer structure for modifying a silicon substrate |
| 11/10/2005 | WO2005106984A1 Method for fabricating semiconductor epitaxial layers using metal islands |
| 11/10/2005 | US20050247267 Molecular beam source for use in accumulation of organic thin-films |
| 11/10/2005 | DE102004020058A1 Verfahren zum Abscheiden einer Schicht aus einer Formgedächtnislegierung A method of depositing a layer of a shape memory alloy |
| 11/09/2005 | CN1695253A Semi-insulating silicon carbide without vanadium domination |
| 11/03/2005 | WO2005103342A1 Method for depositing a layer consisting of a shape memory alloy |
| 11/03/2005 | DE202005013898U1 Calcium difluoride single crystal with small scattering (sic), refractive index difference and number of small angle grain boundaries useful in the production of computer chips and electronic circuits |
| 11/03/2005 | DE102005017288A1 Verfahren zur Herstellung einer Halbleitervorrichtung mit einem Graben in einem Siliziumcarbid-Halbleitersubstrat A method of manufacturing a semiconductor device having a trench in a silicon carbide semiconductor substrate |
| 11/01/2005 | US6960490 Method and resulting structure for manufacturing semiconductor substrates |
| 11/01/2005 | CA2272100C Method for preparation of metal intercalated fullerene-like metal chalcogenides |
| 10/27/2005 | US20050239255 Formation of lattice-tuning semiconductor substrates |
| 10/26/2005 | EP1587971A2 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 10/25/2005 | US6958254 Method to produce germanium layers |
| 10/20/2005 | WO2005098097A1 Manufacture of cadmium mercury telluride |
| 10/20/2005 | WO2004020683A3 Silver selenide film stoichiometry and morphology control in sputter deposition |
| 10/20/2005 | US20050233539 Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate |
| 10/20/2005 | US20050233495 Novel technique to grow high quality ZnSe epitaxy layer on Si substrate |
| 10/20/2005 | US20050233171 Epitaxial oxide films via nitride conversion |
| 10/20/2005 | US20050233163 Titanium dioxide - Cobalt magnetic film and method of its manufacture |
| 10/20/2005 | US20050229841 Protein temperature evaporation-controlled crystallization device and method thereof |
| 10/20/2005 | EP1573081A3 Silver selenide film stoichiometry and morphology control in sputter deposition |
| 10/20/2005 | CA2561648A1 Manufacture of cadmium mercury telluride |
| 10/19/2005 | CN1223696C A solid electrolyte crystal material and process for preparing crystal film |
| 10/18/2005 | US6956012 Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom |
| 10/16/2005 | CA2502875A1 Protein temperature evaporation-controlled crystallization device and method thereof |
| 10/13/2005 | WO2005095263A2 Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 10/13/2005 | US20050227453 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer |
| 10/13/2005 | US20050223969 Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof |
| 10/13/2005 | US20050223968 Patterned atomic layer epitaxy |
| 10/13/2005 | US20050223967 Powder metallurgy crucible for aluminum nitride crystal growth |
| 10/13/2005 | CA2567032A1 Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 10/12/2005 | EP1583858A2 Sacrificial template method of fabricating a nanotube |
| 10/12/2005 | CN1680636A Preparation of beta-FeSi2 single crystal by pulsing laser method |
| 10/12/2005 | CN1222642C Semi-insulating silicon carbide without vanadium domination |
| 10/11/2005 | US6953703 Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
| 10/11/2005 | CA2300166C Apparatus and method for in-situ thickness and stoichiometry measurement of thin films |
| 10/06/2005 | US20050221624 Growing smooth semiconductor layers |
| 10/06/2005 | US20050221623 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same |
| 10/06/2005 | US20050218411 Hafnium nitride buffer layers for growth of GaN on silicon |
| 10/06/2005 | US20050217569 Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber |
| 10/06/2005 | US20050217568 Deposition of buffer layers on textured metal surfaces |
| 10/06/2005 | US20050217567 Covering assembly for crucible used for evaporation of raw materials |
| 10/06/2005 | US20050217560 Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
| 10/05/2005 | CN1678771A Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 10/05/2005 | CN1676678A ZnO nano crystal column/nano crystal filament composite structure product and its preparing process |
| 09/29/2005 | US20050213282 Method of producing perovskite film having (001) orientation and device including the film |
| 09/29/2005 | US20050211970 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
| 09/29/2005 | US20050211156 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal |
| 09/29/2005 | DE10056686B4 Verdampferzelle und ein Verfahren zur Herstellung von Aufdampfschichten The evaporator cell and a method for the preparation of vapor-deposition layers |
| 09/27/2005 | US6949478 Oxide film forming method |
| 09/22/2005 | WO2005047574A3 Heteroepitaxial layer and method for the production thereof |
| 09/22/2005 | US20050206018 gas driers, rotating coaters, vacuum treatment apparatus, heat treatment apparatus, charged particle flow irradiating apparatus, plasma treatment apparatus, electrostatic absorbers, interatomic force microscope, X-ray irradiating apparatus and cleaners |
| 09/22/2005 | US20050205014 Dual ion beam assisted deposition of biaxially textured template layers |
| 09/22/2005 | US20050205003 Silicon carbide single crystal and method and apparatus for producing the same |
| 09/15/2005 | DE10393690T5 III-V Halbleiter und Verfahren zur seiner Herstellung III-V semiconductors and methods for its preparation |
| 09/14/2005 | EP1573081A2 Silver selenide film stoichiometry and morphology control in sputter deposition |
| 09/09/2005 | WO2005083161A1 Transparent ferromagnetic compound containing no magnetic impurity such as transition metal or rare earth metal and forming solid solution with element having imperfect shell, and method for adjusting ferromagnetic characteristics thereof |
| 09/08/2005 | DE102004008065A1 Verfahren zur Integration von kolloidal erzeugten Nanopartikeln in epitaktischen Schichten Method for the integration of colloidal nanoparticles generated in epitaxial layers |
| 09/06/2005 | CA2261769C Catio3 interfacial template structure on superconductor |
| 08/31/2005 | EP1567696A1 Method and device for aln single crystal production with gas-permeable crucible walls |
| 08/31/2005 | EP1036863B1 Method for synthesizing n-type diamond having low resistance |
| 08/31/2005 | CN1662673A Material evaporation chamber with differential vacuum pumping |
| 08/30/2005 | US6936565 Modified carbide and oxycarbide containing catalysts and methods of making and using thereof |
| 08/25/2005 | WO2005078788A1 Group i-vii semiconductor single crystal thin film and process for producing same |
| 08/25/2005 | WO2005078780A1 Vapor-phase deposition method |
| 08/25/2005 | WO2005043604A3 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
| 08/25/2005 | US20050183658 AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate |
| 08/25/2005 | CA2556824A1 Vapor phase growth method |
| 08/24/2005 | EP1566833A2 Method for integration of colloidal nanoparticles within epitaxial layers |
| 08/23/2005 | US6933065 Substrate overcoated with smooth oxide composite |
| 08/18/2005 | US20050178315 Tantalum based crucible |
| 08/17/2005 | CN1656603A Formation of lattice-tuning semiconductor substrates |
| 08/17/2005 | CN1215196C Laminated film and method of forming film |
| 08/16/2005 | US6929867 Hafnium nitride buffer layers for growth of GaN on silicon |
| 08/16/2005 | US6929695 Method for preparing single crystal oxide thin film |
| 08/11/2005 | US20050176264 Process of forming silicon-based nanowires |
| 08/11/2005 | US20050176217 Method to fabricate patterned strain-relaxed sige epitaxial with threading dislocation density control |
| 08/10/2005 | CN1214472C Device and method for mfg. GaN base |
| 08/09/2005 | US6927436 Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory |
| 08/04/2005 | WO2005071133A2 Vacuum deposition method and sealed-type evaporation source apparatus for vacuum deposition |
| 08/04/2005 | US20050166846 Large area deposition in high vacuum with high thickness uniformity |
| 08/04/2005 | US20050166834 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |