| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 03/11/1997 | US5610094 Photoelectric conversion device |
| 03/04/1997 | US5607899 Method of forming single-crystalline thin film |
| 03/04/1997 | US5607781 Oxide film with preferred crystal orientation, method of manufacturing the same, and magneto-optical recording medium |
| 03/04/1997 | US5607775 Article for use under high vacuum at high temperature |
| 03/04/1997 | US5607560 Diamond crystal forming method |
| 02/27/1997 | WO1997007265A1 SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS |
| 02/26/1997 | EP0759416A2 Vessel of pyrolytic boron nitride |
| 02/20/1997 | WO1997006292A1 Sources used in molecular beam epitaxy |
| 02/19/1997 | EP0758691A1 Process for the chemical beam etching of a substrate |
| 02/18/1997 | US5603766 Simultaneously depositing a first, second and third metal on a nonreactive substrate |
| 02/11/1997 | US5601649 Oxide superconducting film manufacturing apparatus |
| 02/11/1997 | CA2183099A1 Process for the chemical spray etching of a substrat |
| 02/06/1997 | WO1997004147A1 Epitaxially layered structure |
| 01/29/1997 | CN1141602A Using laser for fabricating coatings substrate |
| 01/28/1997 | US5597411 Method of forming a single crystal material |
| 01/21/1997 | US5595960 Method of depositing a superconductor layer on a substrate through an intermediate layer of doped CeO2 |
| 01/14/1997 | US5593951 Epitaxy of high TC superconductors on silicon |
| 01/14/1997 | US5593742 Fabrication of silicon microclusters and microfilaments |
| 12/31/1996 | US5590385 Compressing oxide powders; sintering; pulverization |
| 12/31/1996 | US5588999 Thin film forming device |
| 12/31/1996 | US5588995 System for monitoring the growth of crystalline films on stationary substrates |
| 12/19/1996 | WO1996041043A1 Carbide nanomaterials |
| 12/19/1996 | DE19622322A1 Vapour phase growth appts. |
| 12/17/1996 | US5585167 Multilayer |
| 12/03/1996 | US5581117 Monocrystalline silicon substrate coated with intermediate layer of zinc telluride or zinc-rich cadmium-zinc-telluride and upper layer of cadmium telluride or cadmium-rich cadmium-zinc-telluride; defect-free crystal structure |
| 11/28/1996 | DE19522054C1 Development of germanium quantum wires on silicon@ substrates |
| 11/26/1996 | CA2124052C Liquid indium source |
| 11/12/1996 | US5574958 Hydrogen radical producing apparatus |
| 11/12/1996 | US5574296 Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer |
| 11/07/1996 | WO1996035091A1 Unibody crucible |
| 11/07/1996 | WO1996034994A1 Chemical vapor deposition method and apparatus |
| 11/05/1996 | US5571603 Single crystal diamond, surface acoustic wave device |
| 10/30/1996 | EP0739250A1 Using lasers to fabricate coatings on substrates |
| 10/22/1996 | US5567288 Crystal-oriented thin film manufacturing apparatus |
| 10/19/1996 | CA2147198A1 Low temperature ion-beam assisted deposition method for realizing sige/si heterostructures |
| 10/17/1996 | WO1996032201A1 Structures having enhanced biaxial texture and method of fabricating same |
| 10/15/1996 | US5565030 Method for the preparation of a superlattice multilayered film |
| 10/10/1996 | WO1996031640A1 Quasi-crystalline alloy thin films, their preparation and use |
| 09/26/1996 | DE19510318A1 Epitaxial growth of cpd. semiconductor layers, esp. Gp=III nitride layers, on substrate |
| 09/25/1996 | EP0649480A4 Semimetal-semiconductor heterostructures and multilayers. |
| 09/24/1996 | US5558720 Rapid response vapor source |
| 09/19/1996 | WO1996022408A3 Device and method for epitaxially growing gallium nitride layers |
| 09/18/1996 | EP0732752A2 Method and apparatus for manufacturing chalcopyrite semiconductor thin films |
| 09/18/1996 | EP0732428A1 Article comprising spinel-structure material on a substrate and method of making the article |
| 09/17/1996 | US5556706 Conductive layered product and method of manufacturing the same |
| 09/17/1996 | US5556472 Film deposition apparatus |
| 09/17/1996 | US5556465 Sample treatment apparatus for use in molecular beam epitaxy |
| 09/17/1996 | US5556462 Growth method by repeatedly measuring flux in MBE chamber |
| 09/11/1996 | EP0389533B1 Sublimation growth of silicon carbide single crystals |
| 09/10/1996 | US5554415 Vaporization with lasers; coating |
| 09/03/1996 | US5552327 Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy |
| 08/29/1996 | WO1996026306A1 Process of diamond growth from c¿70? |
| 08/29/1996 | WO1996026305A1 Method for producing uniaxial tetragonal thin films of ternary intermetallic compounds |
| 08/29/1996 | CA2213316A1 Process of diamond growth from c70 |
| 08/28/1996 | EP0728230A1 Method of depositing monomolecular layers |
| 08/22/1996 | WO1996025537A1 Method and apparatus for producing single crystal carbon films |
| 08/20/1996 | US5546889 Multilayer film with polytetrafluoroethylene on a substrate and oligothiophene compound or a polyphenylene vinylene |
| 08/13/1996 | US5545611 Oxide superconductor thin film prepared by MBE |
| 08/06/1996 | US5543176 CVD of Al2 O3 layers on cutting inserts |
| 08/06/1996 | US5543170 Desorption mass spectrometric control of alloy composition during molecular beam epitaxy |
| 08/06/1996 | CA2103085C Method for preparing superconducting thin film formed of high temperature superconductor oxide |
| 07/30/1996 | US5541407 Dopes; sublimation, vaporization, atomizing |
| 07/30/1996 | US5540780 Temperature controlling; vacuum vapor deposition |
| 07/25/1996 | WO1996022408A2 Device and method for epitaxially growing gallium nitride layers |
| 07/23/1996 | US5538763 Method of preparing carbon cluster film having electrical conductivity |
| 07/23/1996 | US5537951 Crystal growth method and apparatus therefor |
| 07/16/1996 | US5536330 Method of purging and pumping vacuum chamber to ultra-high vacuum |
| 07/03/1996 | EP0720418A1 Ternary compound film and manufacturing method therefor |
| 06/27/1996 | WO1996019597A1 A method and apparatus for varying the flux of a molecular beam produced by a molecular beam epitaxy cell |
| 06/25/1996 | US5529949 Process of making thin film 2H α-sic by laser ablation |
| 06/11/1996 | US5525538 Method for intrinsically doped III-A and V-A compounds |
| 06/06/1996 | WO1996017113A1 Process and device for sublimation growing silicon carbide monocrystals |
| 05/29/1996 | EP0714122A1 Method for forming nitrogen-doped group ii-vi compound semiconductor film |
| 05/29/1996 | EP0458991B1 Process for forming epitaxial film |
| 05/22/1996 | EP0712818A2 Article for use under high vacuum at high temperature |
| 05/15/1996 | EP0712150A1 Sublimation growth of silicon carbide single crystals |
| 05/15/1996 | EP0711853A1 Method for growing gallium nitride compound semiconductor crystal, and gallium nitride compound semiconductor device |
| 05/15/1996 | EP0711363A1 Process for producing high-resistance silicon carbide |
| 05/14/1996 | US5516404 Method for manufacturing a micro-electronic component having an electrically conductive tip of doped silicon |
| 05/08/1996 | EP0710992A1 Superconducting metal oxide film and method of preparing same |
| 05/05/1996 | CA2135125A1 Film depositing apparatus and process for preparing layered structure including oxide superconductor thin film |
| 05/01/1996 | EP0709903A1 Method for preparing a substrate for the deposition of a thin film of superconducting material |
| 04/30/1996 | US5512541 Homoepitaxial and heteroepitaxial growth |
| 04/30/1996 | US5512151 Method of making thin-layer component |
| 04/24/1996 | EP0708488A1 Epitaxial growth of semiconductor |
| 04/17/1996 | EP0707097A1 MBE apparatus and MBE method |
| 04/16/1996 | CA2040070C Method of preparing oxide superconducting film |
| 04/09/1996 | US5505159 Growing intermetallic from reacting a group 3 halide with a group 5 hydride; exciting stretching vibration of hydride in beam, aligning orientation of molecules |
| 04/04/1996 | DE19536253A1 Epitaxial crystal growth for semiconductor lasers and SHF applications |
| 03/26/1996 | US5502227 Liquid indium source |
| 03/26/1996 | US5501911 Copper crystal film coated organic substrate |
| 03/26/1996 | US5501175 Strontium titanate, high vacuum |
| 03/26/1996 | US5501174 Maintaining substrate at certain temperture and pressure conditions while aluminum is deposited by vacuum evaporation |
| 03/20/1996 | EP0702101A2 MBE System and semiconductor device fabricated using same |
| 03/13/1996 | EP0701008A2 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
| 03/12/1996 | US5498298 Cobalt and copper alloy |
| 03/07/1996 | WO1996007202A1 Methods and systems for monitoring and controlling layer formation using p-polarized reflectance spectroscopy |
| 03/07/1996 | WO1996006960A1 Oriented crystal growth and products made thereby |
| 02/27/1996 | US5494558 Sputtering carbon target, quenching in inert gas, depositing onto substrate, carbon soot is extracted |
| 02/20/1996 | US5492776 Upconversion waveguide which is capable of converting ir radiation and visible light into visible rgb-uv radiation |