Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
07/2006
07/25/2006US7081293 Metallic nanowire and method of making the same
07/20/2006WO2005007936A3 Ultrahard diamonds and method of making thereof
07/20/2006US20060156971 Apparatus for manufacturing single crystal
07/20/2006US20060156970 Methods for in-situ cleaning of semiconductor substrates and methods of semiconductor device fabrication employing the same
07/20/2006US20060156969 Silicon wafer, process for producing the same and method of growing silicon single crystal
07/18/2006US7078318 Method for depositing III-V semiconductor layers on a non-III-V substrate
07/18/2006US7077904 Method for atomic layer deposition (ALD) of silicon oxide film
07/13/2006US20060150894 Method for producing a wafer
07/13/2006US20060150891 ß-Ga2o3 single crystal growing method, thin-film single crystal growing method, Ga2o3 light-emitting device, and its manufacturing method
07/11/2006US7074697 Doping-assisted defect control in compound semiconductors
07/11/2006US7074272 Cubic (zinc-blend) aluminum nitride and method of making same
07/06/2006WO2006070480A1 Silicon carbide single crystal, silicon carbide single crystal wafer, and process for producing the same
07/06/2006US20060145186 Buffer structure for modifying a silicon substrate
07/06/2006US20060144325 Driving shaft of effusion cell for deposition system and deposition system having the same
07/06/2006US20060144324 Silicon carbide single crystal and method and apparatus for producing the same
07/06/2006US20060144323 Substrate with locally integrated single crystalline silicon layer and method of fabricating the same
07/06/2006US20060144322 Ultrahard diamonds and method of making thereof
07/05/2006CN1263063C Field emission nano material capable of being used in plane display
07/04/2006US7071087 Technique to grow high quality ZnSe epitaxy layer on Si substrate
07/04/2006US7070650 Diamond film and method for producing the same
06/2006
06/29/2006US20060141267 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film
06/29/2006US20060141168 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film
06/29/2006US20060137614 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film
06/28/2006CN1261622C Method and apparatus for growing silicon carbide single crystal by physical vapor transportation
06/22/2006US20060130746 Method for forming nickel silicide film, method for manufacturing semiconductor device, and method for etching nickel silicide
06/22/2006US20060130745 Domain epitaxy for thin film growth
06/22/2006US20060130744 Pulsed mass flow delivery system and method
06/22/2006US20060130743 Low temperature load and bake
06/22/2006US20060130742 Process for producing silicon carbide crystals having increased minority carrier lifetimes
06/21/2006EP1672091A1 Wurtzrite thin film, laminate containing wurtzrite crystal layer, and method for production thereof
06/21/2006CN1791706A Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element
06/21/2006CN1791705A Silicon epitaxial wafer, and silicon epitaxial wafer producing method
06/15/2006WO2006062955A1 Process for producing high quality large size silicon carbide crystals
06/15/2006WO2005041253A3 Methods for forming superconductor articles and xrd methods for characterizing same
06/15/2006US20060128122 Mbe growth of a semiconductor layer structure
06/15/2006US20060124051 Zinc oxide single crystal
06/15/2006US20060124048 Topological crystal of transition metal chalcogenide and method of forming the same
06/13/2006US7061014 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
06/13/2006US7060597 Manufacturing method for a silicon substrate having strained layer
06/13/2006US7060132 Method and apparatus of growing a thin film
06/13/2006US7060131 Epitaxy with compliant layers of group-V species
06/08/2006WO2006041659A3 Low 1c screw dislocation density 3 inch silicon carbide wafer
06/08/2006US20060121637 MBE growth of p-type nitride semiconductor materials
06/08/2006US20060118810 Crystal growth method of nitride semiconductor
06/08/2006US20060118037 Process for producing high quality large size silicon carbide crystals
06/08/2006US20060118036 Semiconductor thin film and process for production thereof
06/07/2006EP1664397A1 Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen
06/07/2006EP1664395A2 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
06/07/2006EP1664394A2 Ultrahard diamonds and method of making thereof
06/07/2006EP1664373A2 Annealing single crystal chemical vapor deposition diamonds
06/07/2006EP1663866A2 Tough diamonds and method of making thereof
06/06/2006US7057244 Dielectric materials
06/06/2006US7057204 III-V group nitride system semiconductor substrate
06/06/2006US7056383 Tantalum based crucible
06/01/2006US20060112874 Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film
05/2006
05/25/2006US20060107891 Topotactic anion exchange oxide films and method of producing the same
05/25/2006US20060107890 One hundred millimeter single crystal silicon carbide wafer
05/24/2006EP1659198A1 Single crystal of silicon carbide, and method and apparatus for producing the same
05/24/2006EP0830218B1 Structures having enhanced biaxial texture and method of fabricating same
05/23/2006US7049190 Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
05/23/2006US7049009 Silver selenide film stoichiometry and morphology control in sputter deposition
05/23/2006US7048798 Silicon carbide single crystal and method and apparatus for producing the same
05/18/2006US20060102068 Reduction of subsurface damage in the production of bulk SiC crystals
05/18/2006US20060102067 Organic light emitting display with single crystalline silicon TFT and method of fabricating the same
05/17/2006EP1656473A2 Metal nano-objects, formed on semiconductor surfaces, and methods for making said nano-objects
05/17/2006EP1485523B1 Metal strip for epitaxial coating and method for production thereof
05/17/2006CN1772974A Process for Li-N codoping growth P type ZnO crystal film
05/16/2006US7045009 Method and apparatus for manufacturing single crystal
05/11/2006WO2005095263A3 Methods of forming alpha and beta tantalum films with controlled and new microstructures
05/11/2006US20060099781 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
05/11/2006US20060097353 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped n-type gallium nitride freestanding single crystal substrate
05/11/2006US20060097266 Large-diameter sic wafer and manufacturing method thereof
05/11/2006US20060096524 Crystal growth method for nitride semiconductor and formation method for semiconductor device
05/10/2006CN1769544A Method for developping monocrystalline iron nanometer thread on silicon substrate
05/04/2006US20060091393 Isotopically pure silicon-on-insulator wafers and methods of making same
05/04/2006US20060090694 Method for atomic layer deposition (ALD) of silicon oxide film
05/04/2006US20060090693 Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer
05/04/2006US20060090692 Generating nano-particles for chemical mechanical planarization
05/04/2006US20060090691 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film
05/04/2006US20060090690 Method of purifying alkaline-earth and alkali-earth halides for crystal growth
05/03/2006EP1652973A1 Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal
05/02/2006US7037574 Atomic layer deposition for fabricating thin films
04/2006
04/27/2006WO2004100221A3 Phase controlled sublimation
04/27/2006US20060086314 Iridium oxide nanowires and method for forming same
04/27/2006US20060086313 Soi wafer and method for manufacturing same
04/25/2006US7033679 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film
04/25/2006US7033647 catalytically depositing gaseous carbon on a catalyst layer using an ion beam and sub-beams to modify nanotube properties; a multi-beam ion optical system controlls sub-beams
04/25/2006US7033435 Process for preparing p-n junctions having a p-type ZnO film
04/25/2006US7033434 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same
04/20/2006WO2006041660A2 100 mm silicon carbide wafer with low micropipe density
04/20/2006WO2006041659A2 Low 1c screw dislocation density 3 inch silicon carbide wafer
04/20/2006WO2006041067A1 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
04/20/2006WO2006040359A1 Method for producing gan or algan crystals
04/20/2006US20060081334 Substrate processing method
04/20/2006CA2583592A1 Process for the production of gan or aigan crystals
04/13/2006WO2006039065A2 Method of growing group iii nitride crystals
04/13/2006WO2006038567A1 METHOD FOR PRODUCING P-TYPE Ga2O3 FILM AND METHOD FOR PRODUCING PN JUNCTION-TYPE Ga2O3 FILM
04/13/2006US20060075959 Trimethylgallium, a method for producing the same and a gallium nitride thin film grown from the trimethylgallium
04/13/2006US20060075958 Low basal plane dislocation bulk grown SiC wafers
04/13/2006US20060075957 Annealed wafer and anneald wafer manufacturing method
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