Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
01/2000
01/06/2000WO2000000677A1 Method for doping semiconductor materials
01/04/2000US6011904 Molecular beam epitaxy effusion cell
12/1999
12/30/1999DE19929184A1 Radio frequency plasma enhanced chemical vapor deposition of diamond like films onto medical devices such as catheter wires
12/29/1999EP0967304A1 Method for manufacturing single crystal of silicon carbide
12/15/1999CN1238813A Gemstones formed of silicon carbide with diamond coating
12/14/1999US6001748 For use as heat sinks, electric and electronic components, such as semiconductors, optical components, components of electric equipment
12/14/1999US6001669 Method for producing II-VI compound semiconductor epitaxial layers having low defects
12/14/1999US6001175 Crystal producing method and apparatus therefor
12/14/1999US6001173 Method of forming a compound semiconductor film
12/08/1999EP0962963A1 Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
12/08/1999EP0962558A1 A method for producing a single-crystalline film
12/07/1999US5997638 Localized lattice-mismatch-accomodation dislocation network epitaxy
12/01/1999CN1237272A Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
11/1999
11/30/1999US5993543 Method of producing plasma display panel with protective layer of an alkaline earth oxide
11/30/1999US5993538 Method of forming single-crystalline thin film using beam irradiating method
11/23/1999US5989511 Smooth diamond films as low friction, long wear surfaces
11/23/1999US5989395 Vacuum sputtering target to form on heated single crystal substrate a lead-lanthanum-(magnesium or manganese) titanate thin film
11/23/1999US5989340 Process and device for sublimation growing of silicon carbide monocrystals
11/23/1999US5989339 Molecular beam epitaxy (mbe) to form n-type cladding, active layer, p-type cladding successively, then forming in second chamber contactor layers of alternating zinc selenide/zinc telluride capped with zinc telluride; laser light emitters
11/17/1999EP0956381A1 Apparatus for growing large silicon carbide single crystals
11/16/1999US5985026 Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers
11/16/1999US5985025 Semiconductor growth method
11/16/1999US5985024 Placing seed crystal in furnace system, placing high purity silicon feedstock in receptacle, heating to melt and vaporize silicon, introducing high purity carbon-containing gas to react with vaporized silicon and deposit silicon carbide
11/10/1999EP0954623A1 Silicon carbide monocrystal growth
11/02/1999US5976958 Thermal cracking
11/02/1999US5976263 The invention relates to apparatus for depositing layers of semiconductor material upon a substrate under vacuum conditions.
11/02/1999CA2171020C Ternary compound film and manufacturing method therefor
10/1999
10/27/1999EP0728230B1 Method of depositing monomolecular layers
10/26/1999US5972109 Growth of bulk single crystals of aluminum nitride
10/20/1999EP0950132A1 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
10/19/1999US5968877 Article comprising substrate sequentially coated with epitaxial buffer layer(s) and high critical temperature (tc) yttrium-barium-copper oxide (ybco) layer
10/19/1999US5968261 Method for growing large silicon carbide single crystals
10/13/1999EP0948672A1 Apparatus for growing silicon carbide crystals
10/13/1999EP0948671A1 Method for preparation of metal intercalated fullerene-like metal chalcogenides
10/12/1999US5964944 Method of producing silicon carbide single crystal
10/06/1999EP0947466A1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film
10/06/1999EP0946795A1 Gemstones formed of silicon carbide with diamond coating
10/05/1999US5961934 Dynamically controlled crystallization method and apparatus and crystals obtained thereby
09/1999
09/30/1999DE19913123A1 Vapor phase crystal growth of bismuth-strontium-calcium-copper oxide thin film useful as a superconductor material
09/28/1999US5958599 Structures having enhanced biaxial texture
09/28/1999US5958132 SiC single crystal and method for growth thereof
09/22/1999CN1229445A Single crystal SiC and process for preparing the same
09/21/1999US5956604 Ohmic contact to Gallium Arsenide using epitaxially deposited Cobalt Digermanide
09/21/1999US5955213 Single crystal substrates of silicon, with ferroelectric thin film with scandium and yttrium, manganese and oxygen for computers
09/14/1999US5952063 Crucible of pyrolytic boron nitride for molecular beam epitaxy
09/14/1999US5952059 Forming a piezoelectric layer with improved texture
09/14/1999US5951767 Molecular beam epitaxy isolation tube system
09/14/1999US5950723 Method of regulating substrate temperature in a low pressure environment
08/1999
08/31/1999US5944903 Effusion cell crucible with thermocouple
08/31/1999US5944890 Crystallization with seeds to form single crystals fot protective coatings
08/26/1999WO1999042191A1 Dynamically controlled crystallization method and apparatus and crystals obtained thereby
08/25/1999EP0937790A2 Method of making GaN single crystal and apparatus for making GaN single crystal
08/24/1999US5942286 Method for manufacturing organic monomolecular film
08/18/1999EP0936291A1 Crystal growth observing apparatus
08/18/1999CN1225953A Method of making sic single crystal and apparatus for making sic single crystal
08/17/1999US5940723 Low temperature molecular beam epitaxy of high quality intermetallic layer on intermetallic or phosphide substrate having different lattice constant
08/10/1999US5937317 Silicon carbide is being extensively explored as a semiconductor material for various electronic applications.
08/10/1999US5935641 Method of forming a piezoelectric layer with improved texture
08/04/1999EP0933450A1 Method of making SiC single crystal and apparatus for making SiC single crystal
08/03/1999US5932294 This invention relates, generally, to apparatus used in the manufacture of components in the compound semiconductor and related industries.
07/1999
07/29/1999WO1999038201A1 Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers
07/29/1999DE19802977A1 Single crystal layer production on a non-lattice-matched single crystal substrate in microelectronic or optoelectronics component manufacture
07/28/1999EP0795050B1 Process and device for sublimation growing silicon carbide monocrystals
07/22/1999WO1999015333A9 Superconductor articles with epitaxial layers
07/13/1999US5922651 Method for forming high tc superconductive thin films
07/08/1999WO1999025908B1 Thin films having a rock-salt-like structure deposited on amorphous surfaces
07/06/1999US5919515 Ferroelectric thin film, electric device and method for preparing ferroelectric thin film
07/01/1999WO1999016941A8 Substrates for superconductors
06/1999
06/30/1999EP0926271A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME
06/29/1999US5918111 Method and apparatus for manufacturing chalcopyrite semiconductor thin films
06/29/1999US5916822 Method of etching a substrate by means of chemical beams
06/17/1999WO1999029934A1 Method and apparatus for growing high purity single crystal silicon carbide
06/16/1999EP0922014A1 Unibody crucible and effusion source employing such a crucible
06/15/1999US5912473 Oligothiophene compound and polytetrafluoroethylene oriented film, polyphenylene vinylene
06/15/1999US5912068 Epitaxial oxides on amorphous SiO2 on single crystal silicon
06/10/1999WO1999015333A8 Superconductor articles with epitaxial layers
06/09/1999CN1218849A Growing method for antimony induced carbon 60 film and carbon 60 film
06/03/1999WO1998056965A3 Molecular beam epitaxy effusion cell
05/1999
05/27/1999WO1999025908A1 Thin films having a rock-salt-like structure deposited on amorphous surfaces
05/27/1999WO1999025907A1 A method of growing a buffer layer using molecular beam epitaxy
05/26/1999EP0885316A4 Metal oxide nanorods
05/26/1999EP0576566B1 A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
05/18/1999US5904771 Stable evaporation rate
05/11/1999US5902640 Method of improving field emission characteristics of diamond thin films
05/11/1999US5902396 Charging a reaction vessel with an alkaline earth chalcogenide, with or without transitional metal or halides, an acid mineralizer, anhydrous ammonia, sealing the vessel, heating to form single crystal, cooling and extracting
04/1999
04/27/1999US5898020 Structures having enhanced biaxial texture and method of fabricating same
04/27/1999US5897954 Epitaxially layered structure
04/27/1999US5897945 Metal oxide nanorods
04/22/1999WO1999019546A1 Methods for growing defect-free heteroepitaxial layers
04/22/1999WO1998056965A9 Molecular beam epitaxy effusion cell
04/22/1999EP1007770A4 Molecular beam epitaxy effusion cell
04/20/1999US5895526 Process for growing single crystal
04/08/1999WO1999016941A1 Substrates for superconductors
04/08/1999CA2305571A1 Substrates for superconductors
04/06/1999US5891243 Production of heavy doped ZnSe crystal
04/01/1999WO1999015719A1 Low vacuum vapor process for producing superconductor articles with epitaxial layers
04/01/1999WO1999015718A1 Low vacuum vapor process for producing epitaxial layers
04/01/1999WO1999015333A1 Superconductor articles with epitaxial layers
03/1999
03/25/1999WO1999014405A1 Method and apparatus for producing silicon carbide single crystal
03/24/1999EP0903429A2 Process for producing heavily doped silicon
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