| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 07/10/2002 | EP1221711A2 Plasma display panel suitable for high-quality display and production method |
| 07/10/2002 | EP1221709A2 Plasma display panel suitable for high-quality display and production method |
| 07/10/2002 | EP1221708A2 Plasma display panel suitable for high-quality display and production method |
| 07/09/2002 | CA2041319C Controlled thallous oxide evaporation for thallium superconductor films and reactor design |
| 07/04/2002 | WO2002052643A2 Semiconductor wafer manufacturing process |
| 07/04/2002 | US20020086534 Providing template having epitaxial-initiating growth surface; sputtering Group III metal target to produce Group III metal source vapor; mixing with nigrogen-containing gas vapors; depositing to produce single-crystal Group III metal nitride |
| 07/04/2002 | US20020083892 Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| 07/04/2002 | US20020083891 Method for growing single crystal silicon carbide |
| 07/04/2002 | US20020083890 Tantalum crucible fabrication and treatment |
| 07/04/2002 | US20020083885 Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure |
| 07/03/2002 | EP1219731A1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF |
| 07/03/2002 | EP1218572A1 Method and apparatus for growing silicon carbide crystals |
| 07/03/2002 | EP0859879B1 A method for epitaxially growing objects and a device for such a growth |
| 06/27/2002 | US20020082171 Multi-layer superconductor having buffer layer with oriented termination plane |
| 06/27/2002 | US20020081858 Process for manufacturing a semiconductor device |
| 06/27/2002 | US20020081825 Method for reproducibly forming a predetermined quantum dot structure and device produced using same |
| 06/27/2002 | US20020078881 Sputtering a group III metal in a nitrogen or ammonia environment and depositing it on a growth surface |
| 06/26/2002 | CN1355931A Multilayered body, method for fabricating multilayered body and semiconductor device |
| 06/26/2002 | CN1355552A Application of YB2 monocrystal |
| 06/25/2002 | US6410162 Zinc oxide films containing P-type dopant and process for preparing same |
| 06/25/2002 | US6408860 Cooling a panel within the chamber onto which deposits are formed; introducing water vapor causing ice to form on said cooled panel; removing said panel from said chamber while covered with ice; and cleaning |
| 06/21/2002 | CA2360057A1 Method for reproducibly forming a predetermined quantum dot structure and device produced using same |
| 06/20/2002 | WO2002048434A2 Gallium nitride materials and methods for forming layers thereof |
| 06/20/2002 | WO2002024983A3 Integrated phase separator for ultra high vacuum system |
| 06/20/2002 | US20020074552 Gallium nitride materials and methods |
| 06/20/2002 | US20020073918 Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
| 06/19/2002 | EP1215730A1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
| 06/19/2002 | EP1215310A1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 06/19/2002 | EP1215307A2 Unibody crucible |
| 06/19/2002 | EP1214190A2 Silicon carbide epitaxial layers grown on substrates offcut towards 1100 |
| 06/18/2002 | US6407405 Lamination structure of zno layers and znte layers alternately stacked on a substrate, wherein n is doped at least in the znte layer. |
| 06/18/2002 | US6406539 Quantity of silicon material supplied with respect to the carbon material is controlled so proportions remain constant; temperature control; powders; crystal defects are reduced |
| 06/13/2002 | WO2002047147A1 Method for producing a positively doped semiconductor with large forbidden band |
| 06/13/2002 | WO2002047127A2 Pyroelectric device on a monocrystalline semiconductor substrate |
| 06/13/2002 | WO2002047119A2 High temperature superconducting thick films |
| 06/13/2002 | US20020072245 Thin film of monocrystalline oxide formed on a bulk wafer monolithically integrated with a complementary metal oxide on a monocrystalline substrate and does not require cooling |
| 06/13/2002 | US20020071804 Applying finely-divided particles of elemental silicon over a shaped mixture of carbon in a binder; heating in a furnace in a vacuum to vaporize and diffuse the silicon to produce the SiC sensor; free of dopants |
| 06/13/2002 | US20020071803 Method of producing silicon carbide power |
| 06/13/2002 | US20020070426 Telescoped multiwall nanotube and manufacture thereof |
| 06/12/2002 | EP1038056B1 A method of growing a buffer layer using molecular beam epitaxy |
| 06/12/2002 | CN1353084A Manufacturing method and application of single wall carbon nano tube |
| 06/11/2002 | US6403982 Semi-insulating silicon carbide without vanadium domination |
| 06/11/2002 | US6403976 Semiconductor crystal, fabrication method thereof, and semiconductor device |
| 06/11/2002 | US6403241 Nickel-aluminum seed layer, chromium-molybdenum underlayer, and magnetic layer comprising boron, chromium, and cobalt; low noise, high coercivity |
| 06/06/2002 | WO2002044444A1 Method and apparatus for producing miiin columns and miiin materials grown thereon |
| 06/06/2002 | WO2002044443A1 Methods and apparatus for producing m'n based materials |
| 06/06/2002 | WO2002043466A2 Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
| 06/06/2002 | US20020066720 Fabrication method of erbium-doped silicon nano-size dots |
| 06/06/2002 | DE19931332C2 Vorrichtung zur Herstellung eines SiC-Einkristalls mit einem doppelwandigen Tiegel An apparatus for producing an SiC single crystal with a double-walled crucible |
| 06/05/2002 | EP1019568B1 Apparatus and process for crystal growth |
| 06/04/2002 | US6399154 Laminate article |
| 05/30/2002 | WO2002043126A2 Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same |
| 05/29/2002 | EP1209729A1 Multilayered body, method for fabricating multilayered body, and semiconductor device |
| 05/29/2002 | DE10056686A1 Vaporizer cell used in a molecular beam epitaxial process comprises a crucible having a heater and an opening, and a covering unit formed by a plate-like screen |
| 05/29/2002 | CN1351680A Semi-insulating silicon carbide without vandium dumination |
| 05/28/2002 | US6396080 Single crystals containing dopes |
| 05/23/2002 | WO2002041365A2 Single crystalline oxide on a semiconductor substrate |
| 05/23/2002 | WO2002040417A2 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 05/23/2002 | WO2001091922A8 Process for production of ultrathin protective overcoats |
| 05/23/2002 | US20020061397 Onion-like carbon film and its production |
| 05/23/2002 | US20020060319 Crystal thin film and production method therefor |
| 05/23/2002 | US20020059902 Niobium crucible fabrication and treatment |
| 05/23/2002 | US20020059901 Low defect axially grown single crystal silicon carbide |
| 05/23/2002 | US20020059898 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties. |
| 05/21/2002 | US6391748 Surface free of amorphous silicon nitride; aluminum nitride layer grown by subjecting the silicon substrate to background ammonia followed by repetitively alternating the flux of 1) al without ammonia and 2) ammonia without al |
| 05/21/2002 | US6391109 Method of making SiC single crystal and apparatus for making SiC single crystal |
| 05/16/2002 | WO2002038496A1 Crystals comprising single-walled carbon nanotubes |
| 05/16/2002 | US20020058351 Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer |
| 05/15/2002 | EP1205436A1 Crystals comprising single-walled carbon nanotubes |
| 05/09/2002 | US20020055003 Zinc oxide films containing p-type dopant and process for preparing same |
| 05/09/2002 | US20020053522 Shaping electrode removes material under a potential difference to controllably shape to a desired contour |
| 05/08/2002 | EP0954623B1 Silicon carbide monocrystal growth |
| 05/02/2002 | WO2002008120A3 Telescoped multiwall nanotube and manufacture thereof |
| 05/02/2002 | US20020050160 Apparatus and method for in-situ thickness and stoichiometry measurement of thin films |
| 05/02/2002 | EP1200651A1 Seed crystal holder with a lateral border for an sic seed crystal |
| 05/02/2002 | EP1200650A1 Sic monocrystal sublimation growth device with a film-covered crucible |
| 04/30/2002 | US6379472 Group III-nitride thin films grown using MBE and bismuth |
| 04/25/2002 | US20020049129 Density of defects of less than 104 per square centimeter, wherein said defects are comprised of micropipes and dislocations. |
| 04/25/2002 | DE10025562C1 Production of a nitride layer on a substrate used in the production of laser diodes comprises vaporizing gallium atoms and aluminum and/or indium atoms and irradiating substrate during vaporization with nitrogen atoms |
| 04/24/2002 | EP1198849A2 Surface conditioning process for making multi-layer articles |
| 04/24/2002 | EP1198848A1 Coated conductor thick film precursor |
| 04/24/2002 | EP1198847A1 Methods and compositions for making a multi-layer article |
| 04/24/2002 | EP1198846A2 Joint high temperature superconductor coated tapes |
| 04/24/2002 | EP1105555B1 METHOD FOR GROWING SiC MONOCRYSTALS |
| 04/24/2002 | EP1002140B1 A phosphorus effusion cell for producing molecular beams to be deposited on a substrate |
| 04/23/2002 | US6375768 Method for making biaxially textured articles by plastic deformation |
| 04/23/2002 | US6375739 Apparatus and process for crystal growth |
| 04/18/2002 | WO2002031893A1 Epitaxial oxide films via nitride conversion |
| 04/18/2002 | WO2002030814A1 A process for the synthesis of nanotubes of transition metal dichalcogenides |
| 04/18/2002 | WO2002001608A3 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/18/2002 | WO2001068954A3 Axial gradient transport apparatus and process |
| 04/18/2002 | US20020045340 Method of manufacturing group iii-v compound semiconductor |
| 04/18/2002 | US20020045073 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 04/18/2002 | CA2425757A1 Epitaxial oxide films via nitride conversion |
| 04/16/2002 | US6372306 Providing a pulsed laser deposition system; placing target containing fluoride of group 1a metal and group 2a metal into deposition system; placing substrate; causing pulses of laser energy to ablate target and deposit onto substrate |
| 04/11/2002 | WO2002029873A1 Method of epitaxial growth of high quality nitride layers on silicon substrates |
| 04/11/2002 | WO2001092608A3 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same |
| 04/11/2002 | WO2001091922A3 Process for production of ultrathin protective overcoats |
| 04/10/2002 | EP1194618A1 Sublimation growth method for an sic monocrystal with growth-pressure heating |
| 04/10/2002 | CN1344336A Prodn. of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |