| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 03/25/2004 | US20040055527 Process for controlling thermal history of vacancy-dominated, single crystal silicon |
| 03/23/2004 | US6709776 Ferroelectricity |
| 03/23/2004 | US6709566 Shaping electrode removes material under a potential difference to controllably shape to a desired contour |
| 03/18/2004 | WO2004022819A1 Nitrogen sources for molecular beam epitaxy |
| 03/18/2004 | WO2003093529A3 Large area deposition in high vacuum with high thickness uniformity |
| 03/18/2004 | WO2003081730A3 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 03/18/2004 | WO2003012831A3 Structure including a monocrystalline perovskite oxide layer |
| 03/18/2004 | US20040053478 Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen |
| 03/18/2004 | US20040051099 Semiconductor device having group III nitride buffer layer and growth layers |
| 03/18/2004 | US20040050320 Silicon carbide single crystal and method and apparatus for producing the same |
| 03/18/2004 | US20040050319 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device |
| 03/18/2004 | CA2497266A1 Nitrogen sources for molecular beam epitaxy |
| 03/17/2004 | EP1397534A2 A method of growing a semiconductor layer |
| 03/16/2004 | US6706114 Methods of fabricating silicon carbide crystals |
| 03/11/2004 | WO2004020686A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices |
| 03/11/2004 | WO2004020683A2 Silver selenide film stoichiometry and morphology control in sputter deposition |
| 03/04/2004 | WO2004019392A2 Mbe growth of a semiconductor layer structure |
| 03/04/2004 | WO2004019390A2 Mbe growth of an algan layer or algan multilayer structure |
| 03/04/2004 | WO2003083177A3 Influence of surface geometry on metal properties |
| 03/04/2004 | US20040040835 Process control; pulsed direct current; controlling pressure |
| 03/04/2004 | US20040040495 Nitrogen sources for molecular beam epitaxy |
| 03/04/2004 | US20040040494 Systems and methods for forming strontium- and/or barium-containing layers |
| 03/04/2004 | US20040040493 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| 03/04/2004 | US20040040492 Substrate and manufacturing method therefor |
| 03/04/2004 | DE19852585B4 Verfahren zur Herstellung wenigstens eines dünnen länglichen Elements Process for the preparation of at least one thin elongated member |
| 03/03/2004 | EP1392895A2 Semi-insulating silicon carbide without vanadium domination |
| 03/03/2004 | EP1392894A2 Molecular beam epitaxy equipment |
| 02/26/2004 | US20040038446 Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
| 02/26/2004 | US20040035356 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same |
| 02/24/2004 | US6696372 Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure |
| 02/19/2004 | WO2003083902A3 Thermal production of nanowires |
| 02/19/2004 | US20040031434 Method of making synthetic gems comprising elements recovered from remains of a species of the kingdom animalia |
| 02/19/2004 | DE19510318B4 Verfahren und Vorrichtung zur Herstellung epitaktischer Schichten Method and apparatus for producing epitaxial layers |
| 02/17/2004 | US6692568 Sputtering a group iii metal in a nitrogen or ammonia environment and depositing it on a growth surface |
| 02/12/2004 | US20040029737 Forming film using seed crystal; high temperature superconductivity |
| 02/12/2004 | US20040029368 Hypercontacting |
| 02/12/2004 | US20040028954 Substrate overcoated with smooth oxide composite |
| 02/12/2004 | DE10230621A1 Device for growing silicon carbide single crystals according to the modified Lely method in the gas phase comprises a tube made from high temperature resistant material having a low vapor pressure arranged in a growing chamber |
| 02/11/2004 | EP1388597A1 METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE |
| 02/10/2004 | US6690957 Yttrium, barium copper composite oxide |
| 02/10/2004 | US6689212 Method for growing an α-SiC bulk single crystal |
| 02/05/2004 | WO2004012227A2 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 02/05/2004 | WO2004011701A1 Dual chamber integrated phase separator for ultra high vacuum system |
| 02/05/2004 | US20040023471 Thermal production of nanowires |
| 02/05/2004 | US20040023077 SrRuO3 buffer material layer. |
| 02/05/2004 | US20040020219 Dual chamber integrated phase separator for ultra high vacuum system |
| 02/04/2004 | EP1386026A1 High resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 02/04/2004 | EP1386025A1 A method to produce germanium layers |
| 02/04/2004 | EP1386019A1 Apparatus and method for epitaxial sputter deposition of multi-compound magnetic epilayers with high deposition rate |
| 01/29/2004 | WO2004009492A2 Diamondoid-based components in nanoscale construction |
| 01/29/2004 | WO2003063226A3 Oxide layer on a gaas-based semiconductor structure and method of forming the same |
| 01/29/2004 | US20040018394 Buffer layers on metal alloy substrates for superconducting tapes |
| 01/29/2004 | US20040016397 Diamondoid-based components in nanoscale construction |
| 01/27/2004 | US6683012 Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride |
| 01/22/2004 | WO2004008506A1 Large-diameter sic wafer and manufacturing method thereof |
| 01/22/2004 | US20040014244 Magnetic semiconductor material and method for preparation thereof |
| 01/22/2004 | US20040011280 Device substrate and method for producing device substrate |
| 01/21/2004 | EP1381561A1 Method for the production of one-dimensional nanostructures and nanostructures obtained according to said method |
| 01/15/2004 | WO2004005593A2 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
| 01/15/2004 | US20040007763 Method and resulting structure for manufacturing semiconductor substrates |
| 01/15/2004 | DE10125912B4 Molekularstrahl-epitaktische Abscheidung von Halbleiterschichten auf vizinalen GaAs-Substraten Molecular beam epitaxial deposition of semiconductor layers on GaAs substrates vicinal |
| 01/15/2004 | CA2491514A1 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
| 01/13/2004 | US6677063 Hydrophilic and/or rutile and anatase titanium oxide are obtained by sputter depositing titanium metal oxide on a film of zirconium oxide in the cubic phase. |
| 01/08/2004 | US20040005779 Spin electronic material and fabrication method thereof |
| 01/06/2004 | US6673478 Crystal-growth substrate and a ZnO-containing compound semiconductor device |
| 01/06/2004 | US6673149 Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate |
| 01/02/2004 | EP1375703A1 Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate |
| 01/02/2004 | EP1375697A1 Laminated film and method of forming film |
| 01/02/2004 | EP1373604A1 Tank for epitaxy installation and installation comprising one such tank |
| 01/01/2004 | US20040001916 Cesium dispensers and process for the use thereof |
| 12/31/2003 | CN1464916A Process for production of ultrathin protective overcoats |
| 12/31/2003 | CN1464074A A solid electrolyte crystal material and process for preparing crystal film |
| 12/30/2003 | US6670308 Electrochemistry; electromagnetism; superconductivity; biaxially orientented films |
| 12/30/2003 | US6670282 Method and apparatus for producing silicon carbide crystal |
| 12/30/2003 | US6669774 Methods and compositions for making a multi-layer article |
| 12/25/2003 | WO2003106731A1 Material evaporation chamber with differential vacuum pumping |
| 12/25/2003 | US20030235720 Depositing coating material comprising zirconium oxide over substrate; depositing coating material comprising titanium oxide; wherein one of coating materials is deposited by pyrolytic deposition |
| 12/24/2003 | CN1462822A Method for preparing p-type Zn1-XMgXO crystal film |
| 12/24/2003 | CN1462821A Method for preparing n-type An1-XMgXO crystal film |
| 12/23/2003 | US6667196 Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
| 12/16/2003 | US6664565 Growing a low temperature growth ZnO layer on a sapphire substrate; thermally processing the low temperature growth ZnO layer; growing a high temperature growth single crystal ZnO layer on the low temperature growth layer |
| 12/16/2003 | US6663989 Anisotropic; epitaxial; computers; data storage |
| 12/16/2003 | US6663976 Laminate articles on biaxially textured metal substrates |
| 12/11/2003 | WO2003103031A2 Formation of lattice-tuning semiconductor substrates |
| 12/11/2003 | US20030226499 Method for producing a positively doped semiconductor with large forbidden band |
| 12/09/2003 | US6660084 Sic single crystal and method for growing the same |
| 12/03/2003 | EP1367151A1 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
| 12/02/2003 | US6656573 Method to grow self-assembled epitaxial nanowires |
| 11/27/2003 | WO2003097905A2 Formation of single-crystal silicon carbide |
| 11/27/2003 | US20030219981 Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer |
| 11/27/2003 | US20030219911 Ultrasonicator, adapted to sonicate a stream of a liquid dispersion of agglomerated primary particles such as toners |
| 11/25/2003 | US6653658 Electrical and electronic structures having improved thermoconductivity, comprising doped layers on germanium, sapphire, silicon and/or carbide substrates; heat exchangers |
| 11/25/2003 | US6652989 Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface |
| 11/25/2003 | US6652648 Method for fabricating GaN single crystal substrate |
| 11/20/2003 | WO2002043466A9 Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
| 11/20/2003 | US20030216043 Method for producing a device having a semiconductor layer on a lattice mismatched substrate |
| 11/20/2003 | US20030213964 III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same |
| 11/18/2003 | US6649434 Hetero-epitaxially grown at a high temperature of >/= 500 degrees C. and supply of oxygen is stopped and gradual cooling |
| 11/18/2003 | US6649287 Transistor, few or no cracks |
| 11/13/2003 | WO2003093529A2 Large area deposition in high vacuum with high thickness uniformity |