Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
03/1999
03/24/1999CN1211814A Method of forming semiconductor device
03/24/1999CN1211641A Metallic organics gaseous phase extended growth technique for In-Ga-N monocrystal film
03/23/1999US5885939 Sputtering a vertically oriented single crystal thin film of yttrium-barium-copper oxide onto horizontally oriented yttrium-barium-copper oxide initially vapor deposited onto single crystal substrate
03/18/1999DE19840836A1 Vapor phase crystal growth apparatus has a narrow chamber connection
03/16/1999US5882786 Gemstones formed of silicon carbide with diamond coating
03/10/1999CN1210565A Growth of colorless silicon carbide crystals
03/09/1999US5880069 Forming nonsuperconducting film on magnesia substrate, then forming superconducting film
03/09/1999US5879811 Oxide thin film having quartz crystal structure
03/09/1999US5879462 Device for heat treatment of objects and a method for producing a susceptor
03/04/1999WO1999010919A1 Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
03/04/1999WO1999010571A1 Apparatus and process for crystal growth
03/04/1999CA2269912A1 Silicon carbide substrate, process for producing the same, and semiconductor element containing silicon carbide substrate
03/02/1999US5876866 Involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel.
03/02/1999US5876684 Methods and apparati for producing fullerenes
03/02/1999CA2061504C Method of forming a single crystal material
02/1999
02/25/1999WO1999009399A1 Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
02/23/1999US5873985 Process of making squid device having tilt-boundary junction
02/23/1999US5873937 Method of growing 4H silicon carbide crystal
02/09/1999US5868850 Vapor phase growth apparatus
02/03/1999EP0711363B1 High resistance silicon carbide and process for production thereof
02/02/1999US5865897 Method of producing film of nitrogen-doped II-VI group compound semiconductor
01/1999
01/26/1999US5863325 Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single crystal
01/19/1999US5861346 Heating the surface of a silicon substrate in the presence of c60 and silicon vapor in a hydrogen free environment; low temperature formation of thin films; hardness, low friction coefficient, strength, thermoconductivity
01/12/1999US5858086 Growth of bulk single crystals of aluminum nitride
01/05/1999US5856231 Process for producing high-resistance silicon carbide
01/05/1999US5856033 Semiconductors; waveguides
12/1998
12/30/1998WO1998059099A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME
12/29/1998US5853478 Method for forming crystal and crystal article obtained by said method
12/23/1998EP0885316A1 Metal oxide nanorods
12/23/1998EP0809721B1 Method and apparatus for producing single crystal carbon films
12/17/1998WO1998056965A2 Molecular beam epitaxy effusion cell
12/15/1998US5849163 Process for formation of epitaxial film
12/15/1998US5849079 Diamond film growth argon-carbon plasmas
12/08/1998US5846667 Process for growing a film epitaxially upon a MGO surface and structures formed with the process
11/1998
11/25/1998EP0879305A1 Growth of colorless silicon carbide crystals
11/18/1998EP0692037B1 DEVICE AND PROCESS FOR PRODUCING SiC SINGLE CRYSTALS
11/12/1998WO1998050605A1 Method of making a low resistivity silicon carbide boule
11/10/1998US5834803 Oriented ferroelectric thin film element and process for preparing the same
11/03/1998US5830270 Electrons
10/1998
10/27/1998US5828080 A mixed oxide thin film of zirconium and rare earth elements including yttrium; rocking curve of the film has half-value width upto 1.50 degree; improved crystal and surface properties
10/27/1998US5827802 Method of depositing monomolecular layers
10/27/1998US5827371 Unibody crucible and effusion source employing such a crucible
10/20/1998US5824368 From seed crystals and fullerenes, low temperature and pressure
10/13/1998US5821199 Process for growing a film epitaxially upon an oxide surface and structures formed with the process
10/13/1998US5821158 Substrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperature
10/13/1998US5820681 Unibody crucible and effusion cell employing such a crucible
10/08/1998WO1998044539A1 Method for manufacturing compound semiconductors
10/06/1998CA2143265C Method of forming single-crystalline thin film
10/01/1998WO1998042896A1 Process of diamond growth from c¿70?
10/01/1998WO1998042620A1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film
10/01/1998CA2283268A1 Process of diamond growth from c70
09/1998
09/30/1998CN1194623A Silicon carbide gemstones
09/29/1998US5814150 Method of and apparatus for forming single-crystalline thin film, beam irradiator, beam irradiating method and beam reflecting device
09/23/1998EP0865518A1 A device for heat treatment of objects and a method for producing a susceptor
09/22/1998US5810923 Method for forming oxide thin film and the treatment of silicon substrate
09/22/1998CA2037432C Method of and apparatus for preparing oxide superconducting film
09/16/1998EP0864672A2 Molecular beam epitaxy method
09/16/1998EP0864537A1 Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same
09/15/1998CA2101285C Method of forming single-crystalline thin film
09/09/1998EP0863414A2 Process for fabricating structurally robust optical coatings
09/08/1998US5804323 Homoepitaxial deposition of large cation and small cation constituent oxides alternately to form stoichiometric film of perovskite or spinel crystal having high quality and clarity
09/02/1998EP0861928A1 Effusion cell for Si and molecular beam epitaxy system
09/01/1998US5800753 Chemical vapor deposition method
08/1998
08/26/1998EP0859879A1 A method for epitaxially growing objects and a device for such a growth
08/25/1998CA2128590C Direct mombe and movpe growth of ii-vi materials on silicon
08/20/1998WO1998036103A1 A phosphorus effusion cell for producing molecular beams to be deposited on a substrate
08/18/1998US5795385 Method of forming single-crystalline thin film by beam irradiator
08/18/1998CA2127323C Process for preparing high crystallinity oxide thin film
08/06/1998WO1998034281A1 High resistivity silicon carbide substrates for high power microwave devices
08/06/1998WO1998033961A1 Apparatus for growing large silicon carbide single crystals
08/04/1998US5788776 Molecular beam epitaxy isolation tube system
08/04/1998US5788768 Feedstock arrangement for silicon carbide boule growth
07/1998
07/28/1998US5785756 Process for fabricating structurally robust optical coatings
07/28/1998CA2107174C Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors
07/22/1998EP0853690A2 Silicon carbide gemstones
07/22/1998EP0853689A1 A method for epitaxially growing objects and a device for such a growth
07/21/1998US5782997 Metal connectors on semiconductors
07/15/1998EP0826131A4 Unibody crucible
07/14/1998US5780322 Method for growing a II-VI compound semiconductor layer containing cadmium and method for fabricating a semiconductor laser
07/07/1998US5776253 Apparatus for forming single-crystalline thin film by beam irradiator and beam reflecting device
07/07/1998US5775416 Temperature controlled chuck for vacuum processing
07/01/1998EP0851042A2 Crucible of pyrolytic boron nitride for molecular beam epitaxy
06/1998
06/30/1998US5773085 Method of manufacturing ternary compound thin films
06/30/1998US5772760 Method for the preparation of nanocrystalline diamond thin films
06/30/1998US5772758 Near real-time extraction of deposition and pre-deposition characteristics from rotating substrates and control of a deposition apparatus in near real-time
06/30/1998US5772757 Molecular beam epitaxy
06/25/1998WO1998027251A1 Apparatus for growing silicon carbide crystals
06/23/1998US5770921 Plasma display panel with protective layer of an alkaline earth oxide
06/16/1998US5766345 Molecular beam epitaxy
06/09/1998US5762896 Single crystal gems hardness, refractive index, polishing and crystallization
06/04/1998WO1998023796A1 Method for preparation of metal intercalated fullerene-like metal chalcogenides
06/04/1998DE19752975A1 High quality bismuth-containing oxide thin film growth
06/03/1998EP0845055A1 SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS
06/02/1998US5759646 Vessel of pyrolytic boron nitride
06/02/1998US5759287 Method of purging and passivating a semiconductor processing chamber
06/02/1998US5759266 Method for growing a CdTe layer on a Si substrate by a molecular beam epitaxy
05/1998
05/28/1998WO1998022638A1 Method for adjusting semiconductor processing equipment
05/26/1998US5755877 Controlling growth of upper thin film on basis of measured fluorescent x-ray values from impinged x-rays incident on film
05/22/1998WO1998021386A1 Gemstones formed of silicon carbide with diamond coating
05/22/1998CA2271014A1 Gemstones formed of silicon carbide with diamond coating
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