| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 11/28/2001 | EP1158077A1 Method and apparatus for producing single crystal of silicon carbide |
| 11/21/2001 | EP1155171A1 Method for growing an $g(a)-sic volume single crystal |
| 11/21/2001 | EP0979319B1 Method of making a low resistivity silicon carbide boule |
| 11/14/2001 | EP1154049A1 Method of manufacturing single-crystal silicon carbide |
| 11/14/2001 | EP1152827A1 Carbide and oxycarbide based compositions and nanorods |
| 11/13/2001 | US6316098 Molecular layer epitaxy method and compositions |
| 11/06/2001 | US6313016 Method for producing epitaxial silicon germanium layers |
| 11/06/2001 | US6313015 Growth method for silicon nanowires and nanoparticle chains from silicon monoxide |
| 11/01/2001 | WO2001082347A1 Method of manufacturing group-iii nitride compound semiconductor device |
| 11/01/2001 | US20010036214 Method and apparatus for in-situ deposition of epitaxial thin film of high-temperature superconductors and other complex oxides under high-pressure |
| 10/31/2001 | DE10119216A1 Verfahren zur Ausformung eines Halbleiterfilms vom Typ P und eine dieses nutzende lichtemittierende Vorrichtung Method for forming a semiconductor film of type P and a this-use light emitting device |
| 10/30/2001 | US6309460 Hazardous containment for MBE maintenance |
| 10/25/2001 | US20010034115 Method for forming p-type semiconductor film and light emitting device using the same |
| 10/18/2001 | US20010031385 Group III-V compound semiconductor and method of producing the same |
| 10/18/2001 | US20010029884 Method for producing a single-crystalline film |
| 10/18/2001 | DE10115937A1 Verdampfer zum Erzeugen von Speisegas für eine Lichtbogenkammer Evaporator for generating feed gas for an arc chamber |
| 10/17/2001 | EP1144737A2 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 10/17/2001 | CN1317875A Thin film electrode and surface sonic wave device utilizing same |
| 10/16/2001 | US6303094 Wherein silicon atoms are removed from a sic crystal by heating said sic crystal in a vacuum at a temperature ranging from 1200 to 2200 degrees c. |
| 10/11/2001 | WO2001011428A8 Superconductor articles, compositions, and methods for making same |
| 10/11/2001 | US20010028034 Process for preparing a bolometer material and bolometer device |
| 10/10/2001 | EP1143493A2 Sublimation growth of silicon carbide crystals |
| 10/10/2001 | CN1317155A Zinc oxide films containing P-type dopant and process for preparing same |
| 10/04/2001 | WO2001072104A1 Method for the production of silicon carbide (sic) layers by means of ionic implantation of carbon and anneals |
| 10/04/2001 | US20010027167 By applying RF power to a substrate holder and irradiating positive ions having a moderate energy while preventing damage to the strained lattice film to be stacked by oxygen negative ions; good crystalline property |
| 10/04/2001 | DE10114029A1 III-V-Halbleiter und Verfahren zu seiner Herstellung III-V semiconductors and process for its preparation |
| 10/02/2001 | US6296956 Vapor deposition of aluminum nitride forming single crystals |
| 10/02/2001 | US6296701 Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom |
| 09/27/2001 | WO2000022203A3 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 09/27/2001 | US20010024885 Substrate for semiconductor device and method of manufacturing the same |
| 09/27/2001 | US20010023945 Semi-insulating silicon carbide without vanadium domination |
| 09/27/2001 | US20010023660 Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon |
| 09/27/2001 | EP1144737A3 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 09/20/2001 | WO2001068957A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 09/20/2001 | WO2001068955A1 Iii-v nitride substrate boule and method of making and using the same |
| 09/20/2001 | WO2001068954A2 Axial gradient transport apparatus and process |
| 09/20/2001 | WO2001008231A9 Methods of making a superconductor |
| 09/19/2001 | EP0781355B1 Epitaxially layered structure |
| 09/18/2001 | US6291319 Method for fabricating a semiconductor structure having a stable crystalline interface with silicon |
| 09/18/2001 | US6291318 Growth of GaN on sapphire with MSE grown buffer layer |
| 09/18/2001 | US6291085 Zinc oxide films containing P-type dopant and process for preparing same |
| 09/11/2001 | US6287710 Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate and a crystalline oxide-on-semiconductor structure |
| 09/11/2001 | US6287645 Ablation material from target onto substrate; hetaing |
| 09/07/2001 | WO2001065590A2 Esrf source for ion plating epitaxial deposition |
| 09/06/2001 | US20010019750 Vapor deposition; molecular beam epitaxial |
| 09/06/2001 | US20010019132 Semi-insulating silicon carbide without vanadium domination |
| 09/05/2001 | EP1130137A1 Material for raising single crystal sic and method of preparing single crystal sic |
| 09/05/2001 | EP1129238A2 Production of bulk single crystals of silicon carbide |
| 09/05/2001 | EP0845055B1 SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS |
| 08/30/2001 | WO2001063020A1 Method and apparatus for growing low defect density silicon carbide and resulting material |
| 08/30/2001 | WO2001008231A3 Methods of making a superconductor |
| 08/30/2001 | US20010017374 Semi-insulating silicon carbide without vanadium domination |
| 08/30/2001 | US20010017257 Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor |
| 08/29/2001 | EP1127961A1 Pyrolytic boron nitride double container and manufacture thereof |
| 08/28/2001 | US6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type |
| 08/28/2001 | US6280580 Method for manufacturing a double-sided high-temperature superconducting oxide thin film having large area |
| 08/23/2001 | US20010015169 Method for growing SiC single crystals |
| 08/22/2001 | CN1309729A Method for growing SiC monocrystals |
| 08/16/2001 | WO2001059186A1 Processing line having means to monitor crystallographic orientation |
| 08/16/2001 | US20010013313 Apparatus for fabricating semiconductor structures and method of forming the structures |
| 08/16/2001 | US20010013311 Epitaxial compound structure and device comprising same |
| 08/16/2001 | EP1123993A2 Single crystal SiC and method of growing the same |
| 08/15/2001 | CN1308690A Method and device for producing at least one silicon carbide monocrystal |
| 08/14/2001 | US6274206 Method of coating a silicon or silicide substrate |
| 08/09/2001 | WO2000071787A3 Semi-insulating silicon carbide without vanadium domination |
| 08/09/2001 | US20010011519 Single crystal SiC and a method of growing the same |
| 08/07/2001 | US6270908 Rare earth zirconium oxide buffer layers on metal substrates |
| 08/07/2001 | US6270574 Method of growing a buffer layer using molecular beam epitaxy |
| 08/07/2001 | US6270573 Growing silicon carbide thin film via molecular beam epitaxy (mbe) on hexagonal crystal using an off-cut inclined surface prevents occurrence of twin; substrate crystal layers each have different stacked crystal systems; semiconductors |
| 08/02/2001 | WO2001055472A2 Method and apparatus for in-situ deposition of epitaxial thin film of high-temperature superconductors and other complex oxides under high-pressure |
| 08/02/2001 | US20010010203 Molecular beam source and molecular beam epitaxy apparatus |
| 08/01/2001 | EP1119653A2 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 07/19/2001 | WO2001051201A1 Carbide- and oxycarbide-based compositions, rigid porous structures including the same, and methods of making and using the same |
| 07/19/2001 | WO2001051160A1 Ultra-low temperature effusion cell |
| 07/19/2001 | CA2396922A1 Carbide- and oxycarbide-based compositions, rigid porous structures including the same, and methods of making and using the same |
| 07/18/2001 | EP1115919A1 Effusion cell and method of use in molecular beam epitaxy |
| 07/18/2001 | CN1303959A Indium-doped barium-titanate material and its preparation method |
| 07/18/2001 | CN1303958A Indium-doped strontium titanate material and its preparation method |
| 07/17/2001 | US6261704 MgO buffer layers on rolled nickel or copper as superconductor substrates |
| 07/17/2001 | US6261363 Technique for growing silicon carbide monocrystals |
| 07/12/2001 | WO2000041808A9 Carbide and oxycarbide based compositions and nanorods |
| 07/11/2001 | EP0865518B1 A device for heat treatment of objects |
| 07/11/2001 | CN1303131A Basis substrate for crystal growth and method for making substrate using same |
| 07/10/2001 | US6258459 Multilayer thin film |
| 07/05/2001 | WO2001048277A1 Method and apparatus for producing single crystal of silicon carbide |
| 07/05/2001 | DE19960823A1 Semiconductor wafer has a rear side and a front side with an epitaxial layer having a specified maximum density of scattered light centers |
| 07/05/2001 | DE10055694A1 Strip-like nickel metal substrate used in the production of a high temperature superconductor consists of very pure nickel which is textured |
| 07/04/2001 | EP0956381B1 Apparatus for growing large silicon carbide single crystals |
| 06/28/2001 | WO2001046500A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 06/28/2001 | WO2000079570A3 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 06/28/2001 | US20010004877 Method and apparatus for producing silicon carbide single crystal |
| 06/28/2001 | US20010004875 Device and method for producing at least one SiC single crystal |
| 06/27/2001 | EP0948672B1 Apparatus for growing silicon carbide crystals |
| 06/27/2001 | CN1301038A Manufacture of semiconductor structure with steady crystalizing interface with silicon |
| 06/21/2001 | WO1998005807A8 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
| 06/20/2001 | EP1108805A1 Method for fabricating a semiconductor structure having a stable crystalline interface with silicon |
| 06/19/2001 | US6248459 Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon |
| 06/14/2001 | WO2001043165A2 Oxide films containing p-type dopant and process for preparing same |
| 06/13/2001 | EP1105555A1 METHOD FOR GROWING SiC MONOCRYSTALS |
| 06/13/2001 | DE10051632A1 Substrate for crystal growth, has base on which crystal system containing separate crystals which are different from epitaxial crystal layer, and epitaxial crystal layer having island-like crystals, are formed |