| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
|---|
| 11/18/2004 | WO2004100221A2 Phase controlled sublimation |
| 11/18/2004 | US20040227150 ZnO system semiconductor device |
| 11/17/2004 | EP1476900A2 Oxide layer on a gaas-based semiconductor structure and method of forming the same |
| 11/17/2004 | CN1546747A Preparation of BaB2O4 single crystal thin film by pulsed laser deposition method |
| 11/17/2004 | CN1176254C Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling |
| 11/11/2004 | WO2004074556A3 β-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD |
| 11/11/2004 | US20040224459 Layered structure, method for manufacturing the same, and semiconductor element |
| 11/10/2004 | EP1474824A2 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer |
| 11/10/2004 | EP1330561B1 Integrated phase separator for ultra high vacuum system |
| 11/10/2004 | CN1544715A Method and apparatus for growing silicon carbide single crystal by physical vapor transportation |
| 11/10/2004 | CN1544714A Automatic pressure control device for SiC single-crystal growth |
| 11/10/2004 | CN1544713A Silicon carbide crystal growth apparatus |
| 11/04/2004 | US20040219735 Epitaxial semiconductor deposition methods and structures |
| 11/04/2004 | US20040216661 Phase controlled sublimation |
| 11/04/2004 | US20040216660 Method of forming high-quality quantum dots by using a strained layer |
| 11/03/2004 | CN1174126C Prodn. of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| 11/02/2004 | US6811611 Esrf source for ion plating epitaxial deposition |
| 10/28/2004 | WO2004092089A1 Methods of obtaining photoactive coatings and articles made thereby |
| 10/28/2004 | WO2004075249A3 Buffer structure for modifying a silicon substrate |
| 10/28/2004 | US20040214412 Method of growing a semiconductor layer |
| 10/28/2004 | US20040211356 Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| 10/28/2004 | US20040211355 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 10/27/2004 | EP1471168A1 Device and method for producing single crystals by vapour deposition |
| 10/27/2004 | CN1541185A Crystals comprising single-walled carbon nanotubes |
| 10/27/2004 | CN1540043A Method for preparing thin film of lithium niobate crystal orientated in direction of caxis |
| 10/27/2004 | CN1173079C Epitaxial growing method for aluminium nitride and growing chamber therefor |
| 10/26/2004 | US6809229 Method of using carbide and/or oxycarbide containing compositions |
| 10/26/2004 | US6808803 Molecular epitaxy method and compositions |
| 10/21/2004 | US20040206952 Buffer layers on metal alloy substrates for superconducting tapes |
| 10/21/2004 | US20040206387 formed via radio frequency magnetron sputtering or chemical vapor deposition; epitaxial growth |
| 10/21/2004 | US20040206205 Cesium mixtures and use thereof |
| 10/19/2004 | US6805745 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles |
| 10/19/2004 | US6805744 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates |
| 10/14/2004 | WO2004020686A3 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices |
| 10/14/2004 | US20040202875 Structure with substrate, monomolecular layer of polycyclic aromatic compound having defined axis oriented normal to plane of monolayer and covalently attached at one axial end to substrate, second layer with compound attached to first layer |
| 10/14/2004 | US20040201030 GaN growth on Si using ZnO buffer layer |
| 10/14/2004 | US20040200416 Effusion cell with improved temperature control of the crucible |
| 10/14/2004 | DE10311573A1 Surface structure used in fuel cell or catalyst comprises coating consisting of chevrel phase clusters arranged on substrate |
| 10/13/2004 | EP1466998A1 Effusion cell with improved temperature control of the crucible |
| 10/12/2004 | US6803071 Paraelectric thin film semiconductor material and method for producing the same |
| 10/07/2004 | WO2004086520A1 ZnO SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME |
| 10/07/2004 | WO2004040046A9 Method for forming thin film on basic material through intermediate layer |
| 10/07/2004 | US20040197946 Systems and methods for forming strontium-and/or barium-containing layers |
| 10/05/2004 | US6800591 Buffer layers on metal alloy substrates for superconducting tapes |
| 10/05/2004 | US6800369 Crystals comprising single-walled carbon nanotubes |
| 10/05/2004 | US6800136 Axial gradient transport apparatus and process |
| 10/05/2004 | US6800135 ZnO/sapphire substrate and method for manufacturing the same |
| 09/30/2004 | WO2004084283A1 Method of growing semiconductor crystal |
| 09/29/2004 | EP1461286A1 Differential stress reduction in thin films |
| 09/28/2004 | US6797341 Method for producing boride thin films |
| 09/28/2004 | US6797060 Method and apparatus for producing silicon carbide single crystal |
| 09/23/2004 | WO2004082020A1 Via and trench structures for semiconductor substrates bonded to metallic substrates |
| 09/22/2004 | EP1459362A2 Method for depositing iii-v semiconductor layers on a non-iii-v substrate |
| 09/22/2004 | CN1531839A Cesium dispensers and process for use thereof |
| 09/22/2004 | CN1168147C Producing method semiconductor crystal |
| 09/16/2004 | WO2004079059A1 (001)-orientated perovskite film formation method and device having perovskite film |
| 09/15/2004 | CN1167105C Manufacture of semiconductor structure with steady crystalizing interface with silicon |
| 09/10/2004 | WO2004061896A3 Method and apparatus for producing monocrystalline ain |
| 09/07/2004 | US6787010 Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
| 09/07/2004 | US6786969 Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| 09/02/2004 | WO2004075249A2 Buffer structure for modifying a silicon substrate |
| 09/02/2004 | WO2004074556A2 β-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD |
| 09/02/2004 | US20040171226 Isotopically pure silicon-on-insulator wafers and method of making same |
| 09/02/2004 | US20040169225 Isotopically pure silicon-on-insulator wafers and method of making same |
| 09/02/2004 | US20040168636 Process and apparatus for producing cystalline thin film buffer layers and structures having biaxial texture |
| 09/02/2004 | US20040168626 Process for forming semiconductor quantum dots with superior structural and phological stability |
| 09/01/2004 | CN1164417C Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 08/31/2004 | US6784085 MIIIN based materials and methods and apparatus for producing same |
| 08/31/2004 | US6783849 Reacting substrate having a surface-exposed monolayer with a bifunctional reagent that reacts with exposed reactive group, producing coupling layer having exposed reactive group with which reactive group of selected compound can react |
| 08/26/2004 | WO2004073024A2 Method and apparatus for making continuous films ofa single crystal material |
| 08/26/2004 | US20040163585 Method for manufacturing polycrystalline silicon thin film and thin film transistor fabricated using polycrystalline silicon thin film manufactured by the manufacturing |
| 08/25/2004 | EP1448804A1 METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA M sb n+1 /sb AX sb n /sb , FILM OF THE COMPOUND AND ITS USE |
| 08/25/2004 | EP1448295A2 Modified carbide and oxycarbide containing catalysts |
| 08/25/2004 | EP1287186B1 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same |
| 08/25/2004 | CN1163640C Single crystal SiC and process for preparing the same |
| 08/24/2004 | US6780243 Method of silicon carbide monocrystalline boule growth |
| 08/19/2004 | US20040159854 Thin film device and its fabrication method |
| 08/19/2004 | DE10303875A1 Struktur, insbesondere Halbleiterstruktur, sowie Verfahren zur Herstellung einer Struktur Structure, in particular semiconductor structure, as well as methods for manufacturing a structure |
| 08/18/2004 | EP1447855A2 Electro-magnetic transducers |
| 08/17/2004 | US6777315 Method of controlling the resistivity of Gallium Nitride |
| 08/12/2004 | WO2004068568A1 Structure, especially a semi-conductor structure, in addition to a method for the production said structure |
| 08/12/2004 | WO2004067797A1 Arrangement consisting of a zinc oxide film applied to a substrate, method for producing said arrangement, and use of the same |
| 08/12/2004 | US20040157414 Silicon based nanospheres and nanowires |
| 08/12/2004 | US20040157412 Method to produce germanium layers |
| 08/12/2004 | US20040155255 the ratio of activation of the dopants can be increased by the method of co-doping two dopants (co-doping method) into the crystal by using a doping amount smaller than that in the earlier technology; improved crystallinity |
| 08/12/2004 | US20040154528 Method for making synthetic gems comprising elements recovered from humans or animals and the product thereof |
| 08/11/2004 | EP1445355A2 Crystal growth method of nitride semiconductor |
| 08/10/2004 | US6773836 Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof |
| 08/10/2004 | US6773616 Formation of nanoscale wires |
| 08/10/2004 | US6773509 Molecular beam epitaxy system and method |
| 08/10/2004 | US6773505 Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure |
| 08/10/2004 | US6773504 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 08/04/2004 | EP1443131A1 Oxide high-temperature superconductor and its production method |
| 08/04/2004 | EP1443130A1 NATURAL SUPERLATTICE HOMOLOGOUS SINGLE CRYSTAL THIN FILM, METHOD FOR PREPARATION THEREOF, AND DEVICE USING SAID SINGLE CRYSTAL THIN FILM |
| 08/03/2004 | US6770136 Device having a foil-lined crucible for the sublimation growth of an SiC single crystal |
| 08/03/2004 | US6770135 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 07/29/2004 | US20040146735 Comprises enhanced crystalline domain, eleveated aspect ratio, small diameter, and increased length; alloys; electronics |
| 07/29/2004 | US20040144299 Methods of fabricating silicon carbide crystals |
| 07/28/2004 | EP1440187A2 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 07/22/2004 | WO2004061896A2 Method and apparatus for producing monocrystalline ain |