| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 07/22/2004 | US20040140535 Semiconductor device, method of forming epitaxial film, and laser ablation device |
| 07/22/2004 | CA2508883A1 Method and apparatus for producing large, single crystals of aluminum nitride |
| 07/21/2004 | EP1438443A1 Method and apparatus for sputter deposition of epilayers with high deposition rate |
| 07/21/2004 | EP1438442A1 Dual-source, single-chamber method and apparatus for sputter deposition |
| 07/21/2004 | CN1514469A Crystal mask, amorphous silicon crystallization method and method of manufacturing array base plate using same |
| 07/20/2004 | US6765151 Enhanced high temperature coated superconductors |
| 07/15/2004 | US20040134418 SiC substrate and method of manufacturing the same |
| 07/15/2004 | US20040134417 Mask for crystallizing, method of crystallizing amorphous silicon and method of manufacturing array substrate using the same |
| 07/15/2004 | US20040134416 Production method of opto-electronic device array |
| 07/14/2004 | EP1436448A1 Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| 07/08/2004 | WO2004057631A2 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| 07/08/2004 | WO2004019392A3 Mbe growth of a semiconductor layer structure |
| 07/08/2004 | US20040132242 Method for the production of one-dimensional nanostructures and nanostructures obtained according to said method |
| 07/08/2004 | US20040131537 Multilayer ribbon; epitaxial deposits; laser ablation |
| 07/08/2004 | US20040129216 Molecular beam epitaxy equipment |
| 07/08/2004 | DE10196294T5 Verfahren zur Herstellung von ultradünnen Schutzbeschichtungen Process for the preparation of ultra-thin protective coatings |
| 07/07/2004 | EP1435091A1 Magnetic material structures, devices and methods |
| 07/07/2004 | CN1511199A Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing metallic very thin film or metallic very thin film laminate |
| 07/01/2004 | WO2004055876A1 Method for preparation of ferroelectric single crystal film structure using deposition method |
| 07/01/2004 | US20040127064 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby |
| 07/01/2004 | US20040124501 Bonding metallic substrates; reducing thickness |
| 07/01/2004 | US20040123797 Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy |
| 06/30/2004 | CN1155995C Multilayered body, method for fabricating multilayered body and semiconductor device |
| 06/29/2004 | US6756320 Gallium/gadolinium/arsenic oxides having low defect and current leakage; field effect transistors |
| 06/29/2004 | US6756139 Buffer layers on metal alloy substrates for superconducting tapes |
| 06/24/2004 | WO2004053965A1 Free standing substrates by laser-induced decoherency and regrowth |
| 06/24/2004 | WO2004039731A3 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys |
| 06/24/2004 | US20040119067 Gallium nitride materials and methods |
| 06/23/2004 | CN1507506A High-resisting silicon carbide substrate for semiconductor devices with high breakdown voltage |
| 06/22/2004 | US6753648 Cesium dispensers and process for the use thereof |
| 06/17/2004 | WO2004051719A1 Mbe growth of p-type nitride semiconductor materials |
| 06/17/2004 | WO2004051718A1 3-5 group compound semiconductor and method for preparation thereof |
| 06/17/2004 | WO2004009492A3 Diamondoid-based components in nanoscale construction |
| 06/17/2004 | US20040115941 Epitaxially coated semiconductor wafer and process for producing it |
| 06/17/2004 | US20040115114 Crystals comprising single-walled carbon nanotubes |
| 06/17/2004 | US20040112278 II-IV group or III-V compound based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
| 06/15/2004 | US6750121 Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam |
| 06/15/2004 | US6749686 Crystal growth method of an oxide and multi-layered structure of oxides |
| 06/15/2004 | US6749685 Silicon carbide sublimation systems and associated methods |
| 06/10/2004 | WO2004048647A1 Topological crystal of transition metal chalcogenide and method of forming the same |
| 06/10/2004 | WO2003054929B1 Method for depositing iii-v semiconductor layers on a non-iii-v substrate |
| 06/10/2004 | US20040110003 Method for shaping a nanotube and a nanotube shaped thereby |
| 06/10/2004 | US20040107895 Quartz thin film |
| 06/08/2004 | US6747317 Semiconductor device |
| 06/03/2004 | US20040105796 Tank for epitaxy installation and installation comprising such a tank |
| 06/03/2004 | US20040104472 One atom in thickness; forms two-dimensionally continuous film; catalysts |
| 06/03/2004 | US20040104384 Growth of high temperature, high power, high speed electronics |
| 06/01/2004 | US6743503 Ultra-thin seed layer for multilayer superlattice magnetic recording media |
| 06/01/2004 | US6743481 Process for production of ultrathin protective overcoats |
| 05/26/2004 | CN1500160A Method for mfg. ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device |
| 05/25/2004 | CA2142307C Methods and apparati for producing fullerenes |
| 05/21/2004 | WO2004042785A2 Functional bimorph composite nanotapes and methods of fabrication |
| 05/21/2004 | WO2004042783A2 Hafnium nitride buffer layers for growth of gan on silicon |
| 05/20/2004 | US20040097096 Method for fabricating semiconductor structures and devices on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| 05/20/2004 | US20040096707 Oxidation of nitride layer; forming oxide; high temperature superconductivity |
| 05/20/2004 | US20040096692 Metal substrates; forming semiconductors; then dielectrics; reducing defects at interface |
| 05/20/2004 | US20040096587 Epitaxial oxide films via nitride conversion |
| 05/20/2004 | US20040094085 Process for preparing p-n junctions having a p-type ZnO film |
| 05/19/2004 | EP1419542A2 Cesium dispensers and process for the use thereof |
| 05/13/2004 | WO2004040047A1 Single crystal base thin film |
| 05/13/2004 | WO2004040046A1 Method for forming thin film on basic material through intermediate layer |
| 05/13/2004 | WO2004039731A2 Nanostructures produced by phase-separation during growth of (iii-v)1-x(iv2)x alloys |
| 05/13/2004 | DE10248025A1 Schichtmaterial sowie Verfahren zur Verbesserung der Stromtragfähigkeit von Hochtemperatur-Supraleiter-Dünnschichten Layer material and method for improving the current carrying capacity of high-temperature superconducting thin films |
| 05/11/2004 | US6734461 SiC wafer, SiC semiconductor device, and production method of SiC wafer |
| 05/11/2004 | US6733895 ZnO film, method for manufacturing the same, and luminescent element including the same |
| 05/06/2004 | EP1415012A1 Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture |
| 05/05/2004 | CN1494607A II-VI group or III-V group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
| 05/04/2004 | US6730164 Systems and methods for forming strontium- and/or barium-containing layers |
| 04/29/2004 | WO2004012227A3 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 04/29/2004 | US20040079285 Automation of oxide material growth in molecular beam epitaxy systems |
| 04/29/2004 | US20040079277 Method for forming suspended microstructures |
| 04/28/2004 | EP1219731B1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF |
| 04/28/2004 | CN1492940A Laminated film and method of forming film |
| 04/22/2004 | US20040077177 Dielectric materials |
| 04/22/2004 | US20040077165 Hafnium nitride buffer layers for growth of GaN on silicon |
| 04/22/2004 | DE10296504T5 Ultradünner Metallfilm, ultradünner mehrschichtiger Metallfilm, und Verfahren zur Herstellung des ultradünnen Metallfilms oder ultradünnen, mehrschichtigen Metallfilms Ultra-thin metal film, ultra-thin metal multilayer film, and method of making the ultra-thin metal film or ultra-thin, multi-layered metal film |
| 04/22/2004 | DE10248964A1 Production of aluminum nitride crystals comprises embedding an arrangement of heating elements in a highly pure aluminum nitride powder, heating in an atmosphere of nitrogen or a mixture of nitrogen and hydrogen, and further processing |
| 04/21/2004 | EP1411152A2 Layered material and method for improving the current carrying capacity of high temperature superconductor thin films |
| 04/20/2004 | US6723186 Method of manufacturing metallic film consisting of giant single crystal grains |
| 04/20/2004 | US6723166 Seed crystal holder with lateral mount for an SiC seed crystal |
| 04/15/2004 | WO2004019390A3 Mbe growth of an algan layer or algan multilayer structure |
| 04/15/2004 | US20040072425 Mbe-method for production of a gallium manganese nitride ferromagnetic film |
| 04/13/2004 | US6720240 Silicon based nanospheres and nanowires |
| 04/13/2004 | US6719843 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 04/13/2004 | US6718775 Dual chamber cooling system with cryogenic and non-cryogenic chambers for ultra high vacuum system |
| 04/08/2004 | WO2004005593A3 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
| 04/08/2004 | WO2003103031A3 Formation of lattice-tuning semiconductor substrates |
| 04/08/2004 | WO2003097905A3 Formation of single-crystal silicon carbide |
| 04/08/2004 | WO2003054929A3 Method for depositing iii-v semiconductor layers on a non-iii-v substrate |
| 04/08/2004 | US20040067386 Laminated film and method forming film |
| 04/07/2004 | EP1404904A1 PRODUCTION METHOD OF $g(a)-SIC WAFER |
| 04/07/2004 | EP1200651B1 Seed crystal holder with a lateral border for an sic seed crystal |
| 04/06/2004 | US6716796 Polycrystalline thin film and method of producing the same and oxide superconductor and method of producing the same |
| 04/06/2004 | US6716795 Useful where an electronically active layer is deposited on the buffer layer |
| 04/06/2004 | US6716724 Method of producing 3-5 group compound semiconductor and semiconductor element |
| 04/06/2004 | US6716655 Group III nitride compound semiconductor element and method for producing the same |
| 04/01/2004 | WO2004027122A1 Silicon carbide single crystal and method and apparatus for producing the same |
| 04/01/2004 | US20040062708 Process for the synthesis of nanotubes of transition metal dichalcogenides |
| 03/31/2004 | EP1403911A2 Thin film device and its fabrication method |
| 03/31/2004 | EP1119653B1 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |