| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 07/10/2003 | US20030126742 Method of fabrication of ZnO nanowires |
| 07/10/2003 | CA2465002A1 Modified carbide and oxycarbide containing catalysts |
| 07/08/2003 | US6589873 Process for manufacturing a semiconductor device |
| 07/03/2003 | WO2003054929A2 Method for depositing iii-v semiconductor layers on a non-iii-v substrate |
| 07/03/2003 | US20030121468 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 07/02/2003 | CN1113112C Enclosing method of ampoule |
| 06/26/2003 | US20030118746 A mechanical cell for vacuum and vapor deposition; heater, injection pipes, a transparent window for applying laser beam to the substrate |
| 06/26/2003 | US20030116426 Thin film; concurrent sputtering; random access memory |
| 06/26/2003 | US20030116084 Method and apparatus for producing silicon carbide single crystal |
| 06/25/2003 | CN1426497A III-V nitride substrate boule and method of making and using same |
| 06/24/2003 | US6582567 Adapted to fit into a K-cell port in a molecular beam epitaxy apparatus. The MSE source has a protruding cylindrical body for insertion into the K-cell port. The cylindrical body is attached at its proximal end to a flange and has its distal |
| 06/19/2003 | WO2002047127A3 Pyroelectric device on a monocrystalline semiconductor substrate |
| 06/19/2003 | US20030111008 Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates |
| 06/18/2003 | CN1425189A Method of manufacturing group-III nitride compound semiconductor |
| 06/12/2003 | US20030109076 Method for producing group-III nitride compound semiconductor device |
| 06/12/2003 | US20030107098 Ultraviolet-transparent conductive film and process for producing the same |
| 06/12/2003 | US20030106489 Method for epitaxially growing a lead zirconate titanate thin film |
| 06/11/2003 | EP1318208A2 Method of depositing heusler alloy thin film by co-sputtering |
| 06/11/2003 | EP1115919B1 Effusion cell and method of use in molecular beam epitaxy |
| 06/05/2003 | WO2003046247A1 METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA Mn+1AXn, FILM OF THE COMPOUND AND ITS USE |
| 06/05/2003 | WO2003045836A1 Differential stress reduction in thin films |
| 06/04/2003 | EP1315852A1 Epitaxial wafer apparatus |
| 06/04/2003 | EP1315682A2 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 06/04/2003 | CN1421900A Substrate for electronic apparatus, Method for producing substrate of electronic apparatus and electronic apparatus |
| 06/03/2003 | US6573209 Zirconium nitride and yttrium nitride solid solution composition |
| 05/28/2003 | EP1314800A1 Method for preparing single crystal oxide thin film |
| 05/28/2003 | EP1314793A1 Titanium dioxide cobalt magnetic film and its manufacturing method |
| 05/28/2003 | EP1246695A4 Carbide- and oxycarbide-based compositions, rigid porous structures including the same, and methods of making and using the same |
| 05/27/2003 | US6569240 Dielectric film and method for forming the same |
| 05/27/2003 | US6569237 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer |
| 05/22/2003 | US20030094132 Apparatus for growing low defect density silicon carbide |
| 05/20/2003 | US6566218 Boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same |
| 05/15/2003 | WO2003040441A1 Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| 05/15/2003 | US20030091738 High speed conveying substrate; controlling microstructure |
| 05/15/2003 | US20030091500 Magnetic recording media |
| 05/13/2003 | US6563144 Process for growing epitaxial gallium nitride and composite wafers |
| 05/13/2003 | US6563118 Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
| 05/13/2003 | US6562761 Coated conductor thick film precursor |
| 05/13/2003 | US6562143 Method for cleaning hazardous waste from vacuum chambers in molecular beam epitaxy processing |
| 05/13/2003 | US6562131 Method for growing single crystal silicon carbide |
| 05/13/2003 | US6562130 Low defect axially grown single crystal silicon carbide |
| 05/13/2003 | CA2153848C Oxide thin film having quartz crystal structure and process for producing the same |
| 05/08/2003 | US20030085426 Semiconductor device, method of forming epitaxial film, and laser ablation device |
| 05/07/2003 | EP1155171B1 Method for growing an $g(a)-sic volume single crystal |
| 05/06/2003 | CA2263352C Single crystal sic and a method of producing the same |
| 05/02/2003 | EP1306858A1 Ultraviolet-transparent conductive film and process for producing the same |
| 05/01/2003 | WO2003036697A2 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 04/30/2003 | CN1414149A Method of building crystal to grow lead zirconate titanate film |
| 04/29/2003 | US6555256 Electroconductive buffer layer epitaxially deposited on a polycrystalline biaxially textured substrate |
| 04/29/2003 | US6554897 Method of producing silicon carbide |
| 04/24/2003 | WO2003033781A1 Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| 04/23/2003 | EP1304749A1 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
| 04/23/2003 | EP1005639B1 Apparatus and method for in-situ thickness and stoichiometry measurement of thin films |
| 04/22/2003 | US6551405 Tool and method for in situ vapor phase deposition source material reloading and maintenance |
| 04/17/2003 | WO2002097173A3 Semi-insulating silicon carbide without vanadium domination |
| 04/17/2003 | US20030073584 High temperature superconductor film, method for forming the same and superconductor element |
| 04/17/2003 | US20030073278 Oxide film forming method |
| 04/17/2003 | US20030070611 SiC single crystal, method for manufacturing SiC single crystal, SiC water having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device |
| 04/17/2003 | US20030070608 Method for producing components and ultrahigh vacuum CVD reactor |
| 04/16/2003 | CN1411035A Single crystal gallium nitride substrate, method for growing single crystal gallium nitride and method for mfg. substrate thereof |
| 04/15/2003 | US6547877 Tantalum crucible fabrication and treatment |
| 04/09/2003 | EP1299900A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/09/2003 | EP1200650B1 Sic monocrystal sublimation growth device with a film-covered crucible |
| 04/09/2003 | CA2670071A1 Gan substrate, method of growing gan and method of producing gan substrate |
| 04/08/2003 | US6544867 Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN |
| 04/03/2003 | WO2003027352A1 Dual-source, single-chamber method and apparatus for sputter deposition |
| 04/03/2003 | WO2003027351A1 Method and apparatus for sputter deposition of epilayers with high deposition rate |
| 04/03/2003 | US20030064541 ZnO film, method for manufacturing the same, and luminescent element including the same |
| 04/01/2003 | US6541295 Method of fabricating a whispering gallery mode resonator using CVD EPI and a bonded silicon wafer |
| 03/27/2003 | WO2002097172A3 Molecular beam epitaxy equipment |
| 03/27/2003 | WO2002059945A3 Oxidized film structure and method of making epitaxial metal oxide structure |
| 03/27/2003 | WO2002040417A9 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 03/27/2003 | WO2002024983A9 Integrated phase separator for ultra high vacuum system |
| 03/27/2003 | US20030056716 Esrf source for ion plating epitaxial deposition |
| 03/26/2003 | EP1296363A1 Method of manufacturing group-iii nitride compound semiconductor device |
| 03/25/2003 | US6537689 Layers of a superconductor/buffer/termination/substrate where the >25% of the termination layer of the buffer comprises the (001) plane high critical current density; heat resistance |
| 03/25/2003 | US6537371 Niobium crucible fabrication and treatment |
| 03/20/2003 | WO2003023817A2 Process for forming semiconductor quantum dots with superior structural and morphological stability |
| 03/20/2003 | WO2003023094A1 Oxide high-temperature superconductor and its production method |
| 03/20/2003 | US20030054660 Method and apparatus for producing silicon carbide crystal |
| 03/20/2003 | US20030054105 Film growth at low pressure mediated by liquid flux and induced by activated oxygen |
| 03/20/2003 | US20030052309 Nano-tube of multi-element system oxide |
| 03/18/2003 | US6534782 Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same |
| 03/18/2003 | US6534026 Density of defects of less than 104 per square centimeter, wherein said defects are comprised of micropipes and dislocations. |
| 03/18/2003 | US6533906 Method of manufacturing an oxide epitaxially strained lattice film |
| 03/13/2003 | WO2003021579A1 Magnetic material structures, devices and methods |
| 03/13/2003 | WO2003001573A3 Apparatus for fabricating semiconductor structures |
| 03/13/2003 | US20030049916 Development of an intermediate-temperature buffer layer for the growth of high-quality GaxInyAlzN epitaxial layers by molecular beam epitaxy |
| 03/12/2003 | EP1290721A1 Preparation method of a coating of gallium nitride |
| 03/11/2003 | US6531408 Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same |
| 03/11/2003 | US6531235 Silicon, a buffer layer, template layer comprises a perovskite oxide |
| 03/06/2003 | WO2002093664A8 Cesium dispensers and process for the use thereof |
| 03/06/2003 | WO2002052643A3 Semiconductor wafer manufacturing process |
| 03/05/2003 | EP1287186A2 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same |
| 03/05/2003 | EP1129238B1 Production of bulk single crystals of silicon carbide |
| 03/04/2003 | US6527858 Comprising a single crystal of zinc oxide (ZnO) that contains a p-type dopant composed of nitrogen (N), and an n-type dopant composed of any one or more elements selected from boron, aluminum, gallium, and hydrogen |
| 02/27/2003 | US20030037724 Axial gradient transport appatatus and process for producing large size, single crystals of silicon carbide |
| 02/26/2003 | CN1399332A ZnO/saphire substrate and its making process |
| 02/25/2003 | US6525820 Rayleigh scattering optical flux monitor |
| 02/25/2003 | US6524651 Making an interfacial template for growing a crystalline metal oxide; vacuum depositing a metal on the Si and/or Ge surface at a high temperature; oxidation by exposure to oxygen at a low partial pressure and temperature |