| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
|---|
| 03/17/2005 | US20050056204 Rare earth silicate single crystal and process for production of rare earth silicate single crystals |
| 03/17/2005 | US20050056119 Preparation of magnetic metal-filled carbon nanocapsules |
| 03/15/2005 | US6867459 Isotopically pure silicon-on-insulator wafers and method of making same |
| 03/10/2005 | WO2004057631A3 Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy |
| 03/10/2005 | US20050053773 Structure, method of manufacturing the same, and device using the same |
| 03/10/2005 | US20050051097 Covering assembly for crucible used for evaporation of raw materials |
| 03/09/2005 | EP1512171A2 Hafnium nitride buffer layers for growth of gan on silicon |
| 03/09/2005 | EP1511884A2 Formation of single-crystal silicon carbide |
| 03/09/2005 | CN1591926A Doped organic semiconductor materials and process for their preparation |
| 03/09/2005 | CN1591783A Molecular beam epitaxy growth apparatus and method of controlling same |
| 03/08/2005 | US6863728 Apparatus for growing low defect density silicon carbide |
| 03/03/2005 | US20050045091 Molecular beam epitaxy growth apparatus and method of controlling same |
| 03/02/2005 | EP1509949A2 Formation of lattice-tuning semiconductor substrates |
| 03/01/2005 | US6861342 Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure |
| 03/01/2005 | CA2271369C Phototonic device with strain-induced three dimensional growth morphology |
| 02/24/2005 | US20050039670 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| 02/24/2005 | DE10335538A1 Verfahren und Vorrichtung zur AIN-Einkristall-Herstellung mit gasdurchlässiger Tiegelwand Method and apparatus for AIN-monocrystal manufacturing with gas-permeable wall of the crucible |
| 02/23/2005 | EP1508903A2 Endowed organic semiconductor materials and method of prepration |
| 02/18/2005 | CA2476168A1 Doped organic semiconductor materials and process for their preparation |
| 02/17/2005 | US20050034650 Ultrahard diamonds and method of making thereof |
| 02/16/2005 | CN1189919C Method of manufacturing group-III nitride compound semiconductor |
| 02/10/2005 | WO2005012603A1 Growth of ulta-high purity silicon carbide crystals in an ambient containing hydrogen |
| 02/10/2005 | WO2005012602A1 Method and device for aln single crystal production with gas-permeable crucible walls |
| 02/10/2005 | WO2005012601A2 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 02/10/2005 | US20050029164 Method of using carbide and/or oxycarbide containing compositions |
| 02/10/2005 | US20050028725 Method and apparatus for manufacturing single crystal |
| 02/10/2005 | CA2533934A1 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| 02/10/2005 | CA2533630A1 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 02/09/2005 | EP1504136A2 Large area deposition in high vacuum with high thickness uniformity |
| 02/08/2005 | US6852160 Epitaxial oxide films via nitride conversion |
| 02/03/2005 | US20050027153 Modified carbide and oxycarbide containing catalysts and methods of making and using thereof |
| 02/03/2005 | US20050026788 High strength composite; biaxial texture; intermetallic formed by diffusion; support strip for superconductots |
| 02/03/2005 | US20050026392 Method for depositing III-V semiconductor layers on a non-III-V substrate |
| 02/03/2005 | US20050025886 Annealing single crystal chemical vapor depositon diamonds |
| 02/03/2005 | US20050022727 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 02/03/2005 | US20050022724 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| 02/02/2005 | EP1315852A4 Epitaxial wafer apparatus |
| 02/02/2005 | CN1574357A Multi-layer structure, and actuator element, capacitive element and filter element using the same |
| 01/27/2005 | WO2005007937A2 Annealing single crystal chemical vapor deposition diamonds |
| 01/27/2005 | WO2005007936A2 Ultrahard diamonds and method of making thereof |
| 01/27/2005 | WO2005007935A2 Tough diamonds and method of making thereof |
| 01/27/2005 | US20050020033 Doping-assisted defect control in compound semiconductors |
| 01/27/2005 | US20050019114 Polycrystalline diamond tool having a mass of sintered nanodiamond particles, the particles containing greater than 95% by volume nanodiamond and greater than 98% by volume carbon; use in superabrasive industry for production of cutting tools, drill bits, wire drawing dies |
| 01/27/2005 | CA2532384A1 Annealing single crystal chemical vapor deposition diamonds |
| 01/27/2005 | CA2532227A1 Tough diamonds and method of making thereof |
| 01/26/2005 | CN1570225A Device and method for producing single crystals by vapor deposition |
| 01/20/2005 | WO2005006421A1 Epitaxial growth process |
| 01/20/2005 | US20050014653 Methods for forming superconductor articles and XRD methods for characterizing same |
| 01/20/2005 | US20050011433 Tough diamonds and method of making thereof |
| 01/18/2005 | US6844074 Quartz layer; vibrators, oscillators, high frequency filter surface acoustic wave elements, optical waveguides, semicon-ductors; atmospheric pressure vapor phase epitaxial deposited silicate on gallium nitride or zinc oxide buffered substrate |
| 01/11/2005 | US6841508 Carbide and oxycarbide based compositions, rigid porous structures including the same, methods of making and using the same |
| 01/11/2005 | US6841235 Metallic nanowire and method of making the same |
| 01/11/2005 | US6841013 Metallic nanowire and method of making the same |
| 01/06/2005 | US20050000406 Device and method for producing single crystals by vapor deposition |
| 01/05/2005 | EP1493848A1 Seed crystal of silicon carbide single crystal and method for producing ingot using same |
| 01/05/2005 | EP1492908A2 Influence of surface geometry on metal properties |
| 01/05/2005 | CN1561405A Dual-source, single-chamber method and apparatus for sputter deposition |
| 01/04/2005 | US6838395 Method for fabricating a semiconductor crystal |
| 01/04/2005 | US6837944 Cleaning and drying method and apparatus |
| 12/30/2004 | US20040264248 Crystal growth method of nitride semiconductor |
| 12/30/2004 | US20040261689 Low temperature epitaxial growth of quartenary wide bandgap semiconductors |
| 12/29/2004 | WO2004073024A3 Method and apparatus for making continuous films ofa single crystal material |
| 12/23/2004 | WO2004111319A2 Sacrificial template method of fabricating a nanotube |
| 12/23/2004 | WO2004111318A1 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
| 12/23/2004 | CA2509257A1 Sacrificial template method of fabricating a nanotube |
| 12/22/2004 | EP1489654A1 LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM |
| 12/22/2004 | EP0389533B2 Sublimation growth of silicon carbide single crystals |
| 12/16/2004 | WO2004084283B1 Method of growing semiconductor crystal |
| 12/16/2004 | WO2004042785A3 Functional bimorph composite nanotapes and methods of fabrication |
| 12/16/2004 | US20040254078 Thin film crystal structure; sapphire with buffer interface |
| 12/16/2004 | US20040253466 Membrane multi-layer structure, and actuator element, capacitive element and filter element using the same |
| 12/16/2004 | US20040250747 Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method |
| 12/16/2004 | DE10316228B3 Effusionszelle mit verbesserter Temperaturkontrolle des Tiegels Effusion cell with improved temperature control of the crucible |
| 12/15/2004 | EP1486590A1 Multi-layer structure, and actuator element, capacitive element and filter element using the same |
| 12/15/2004 | EP1485523A1 Metal strip for epitaxial coating and method for production thereof |
| 12/15/2004 | EP1218572B1 Method and apparatus for growing silicon carbide crystals |
| 12/15/2004 | CN1554808A Device and method for growng large diameter 6H-SiC monocrystal with semiconductor property |
| 12/14/2004 | US6830949 Method for producing group-III nitride compound semiconductor device |
| 12/09/2004 | WO2004106595A1 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
| 12/09/2004 | US20040248427 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same |
| 12/09/2004 | CA2527124A1 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
| 12/08/2004 | EP1483786A1 Method and resulting structure for manufacturing semiconductor substrate |
| 12/07/2004 | US6828507 Enhanced high temperature coated superconductors joined at a cap layer |
| 12/02/2004 | WO2004105098A2 P-type group ii-vi semiconductor compounds |
| 12/02/2004 | US20040241343 Crucibles in which a beta -SiC crystal produced by CVD substrate and an SiC powder raw material are placed to be close to each other are stacked layers, and placed inside a radiation tube, which is heated by an induction heating coil to sublime and recrystallize the raw material powder on the crystal |
| 12/02/2004 | US20040237881 Methods for epitaxial silicon growth |
| 12/01/2004 | CN1551933A Oxide high-temperature superconductor and its production method |
| 11/30/2004 | US6824898 Dielectric thin film, method for making the same and electric components thereof |
| 11/30/2004 | US6824611 Method and apparatus for growing silicon carbide crystals |
| 11/25/2004 | WO2004101867A1 Silicon epitaxial wafer, and silicon epitaxial wafer producing method |
| 11/25/2004 | WO2004101842A1 Wurtzrite thin film, laminate containing wurtzrite crystal layer, and method for production thereof |
| 11/25/2004 | WO2004042783A3 Hafnium nitride buffer layers for growth of gan on silicon |
| 11/25/2004 | US20040235274 Manufacturing method for a silicon substrate having strained layer |
| 11/25/2004 | US20040232427 P-type group II-VI semiconductor compounds |
| 11/24/2004 | EP1392894B1 Molecular beam epitaxy equipment |
| 11/23/2004 | US6822302 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device |
| 11/23/2004 | US6821655 For a transparent electrode in a solar battery, display device such as liquid crystal display and the like |
| 11/23/2004 | US6821342 Method for forming suspended microstructures |
| 11/23/2004 | US6821338 Particle beam biaxial orientation of a substrate for epitaxial crystal growth |
| 11/23/2004 | CA2217822C Structures having enhanced biaxial texture and method of fabricating same |