| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 07/13/1982 | US4339300 Process for smoothing surfaces of crystalline materials |
| 06/08/1982 | US4333792 Enhancing epitaxy and preferred orientation |
| 06/01/1982 | US4332838 Vapor deposition |
| 05/18/1982 | US4330360 Molecular beam deposition technique using gaseous sources of group V elements |
| 04/20/1982 | US4325776 Method for preparing coarse-crystal or single-crystal metal films |
| 11/24/1981 | CA1112986A1 Growing epitaxial films when the misfit between film and substrate is large |
| 11/10/1981 | US4299649 Gasification |
| 10/13/1981 | CA1110421A1 Cadmium mercury telluride sputtering targets |
| 09/23/1981 | EP0036360A1 Process for growing a single crystal in a closed ampoule |
| 09/17/1981 | WO1981002590A1 Method for growing a single-crystal in a closed cylindrical housing and product obtained |
| 09/02/1981 | EP0034982A1 Process for preparing homogeneous films of Hg1-xCdxTe |
| 09/01/1981 | US4286545 Apparatus for vapor depositing a stoichiometric compound |
| 08/12/1981 | EP0033506A1 Method of manufacturing low impedance monocrystal metal or alloy layers on insulating chips |
| 08/04/1981 | US4282045 Pb1-W CdW S Epitaxial thin film |
| 07/28/1981 | US4281029 Vaporization and impingement of the gases |
| 07/01/1981 | EP0031180A2 Method of growing a doped III-V alloy layer by molecular beam epitaxy and a semiconductor device comprising a semiconductor substrate bearing an epitaxial layer of a doped III-V alloy grown by such a method |
| 05/26/1981 | CA1102013A1 Molecular-beam epitaxy system and method including hydrogen treatment |
| 04/21/1981 | US4263604 Lead cadmium chalcogenide |
| 04/21/1981 | US4262630 Method of applying layers of source substance over recipient and device for realizing same |
| 04/14/1981 | US4261762 Method for conducting heat to or from an article being treated under vacuum |
| 03/25/1981 | EP0025670A1 Method and apparatus for conducting heat to or from an article being treated under vacuum |
| 03/10/1981 | US4255208 Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer |
| 02/11/1981 | EP0023509A1 Cold crucible semiconductor deposition process and apparatus |
| 12/16/1980 | US4239955 Effusion cells for molecular beam epitaxy apparatus |
| 12/16/1980 | US4239788 Method for the production of semiconductor devices using electron beam delineation |
| 12/16/1980 | US4239584 Molecular-beam epitaxy system and method including hydrogen treatment |
| 12/09/1980 | US4238232 Indium-antimony |
| 12/09/1980 | CA1090986A1 Apparatus for forming a group ii-vi or group iii-v compound |
| 11/25/1980 | US4235662 Layer of crystalline silicon having (111) orientation on (111) surface of lithium aluminum |
| 11/12/1980 | EP0018397A1 Layer of crystalline silicon having (iii) orientation on (iii) surface of lithium aluminium. |
| 11/11/1980 | US4233613 Compound semiconductor wafer |
| 11/11/1980 | US4233092 Utilizing lead compounds of sulphur, selenium and tellurium as dopant sources |
| 10/28/1980 | CA1088677A1 Growth of polycrystalline semiconductor film with intermetallic nucleating layer |
| 10/16/1980 | EP0018397A4 Layer of crystalline silicon having (iii) orientation on (iii) surface of lithium aluminium. |
| 10/14/1980 | US4227962 Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence |
| 10/14/1980 | US4227961 Process for forming a single-crystal film |
| 10/14/1980 | US4227948 Gallium phosphide |
| 10/14/1980 | CA1087718A1 Method for producing a layer of crystalline silicon |
| 09/30/1980 | US4225409 Metallic modified material of intermetallic compound and a process for the production of the same |
| 09/17/1980 | EP0015390A1 Method and apparatus for performing growth of thin films of a compound |
| 09/16/1980 | US4222814 Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound |
| 07/24/1980 | WO1980001489A1 Cold crucible semiconductor deposition process and apparatus |
| 07/22/1980 | US4213844 Ion plating apparatus |
| 07/22/1980 | US4213781 Deposition of solid semiconductor compositions and novel semiconductor materials |
| 04/15/1980 | US4197814 Apparatus for forming compound semiconductor thin-films |
| 02/07/1980 | WO1980000126A1 Layer of crystalline silicon having(111)orien tation on(111)surface of lithium aluminum |
| 02/05/1980 | CA1071075A1 Method of cleaning surfaces |
| 02/05/1980 | CA1071069A2 Liquid phase epitaxy method and apparatus |
| 01/01/1980 | US4181544 Molecular beam method for processing a plurality of substrates |
| 12/18/1979 | US4179312 Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition |
| 11/13/1979 | US4174422 Layer of nickel crystals intermediate between monocrystalline sodium chloride and silver |
| 11/13/1979 | CA1066174A1 Method for producing compound thin films |
| 10/16/1979 | US4171234 Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles |
| 08/21/1979 | CA1060762A1 Method and apparatus for growing hg12 crystals |
| 08/08/1979 | EP0003425A1 A method for forming a crystalline film of a paramagnetic sodium thallium type intermetallic compound and apparatus for performing said method |
| 07/17/1979 | US4161418 Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers |
| 07/03/1979 | US4159919 Alloying |
| 06/27/1979 | EP0002472A2 Device and method for growing doped semiconductor material layers on the surface of a semiconductor substrate |
| 05/22/1979 | CA1054903A1 Method and device for growing crystals |
| 05/15/1979 | US4154631 Equilibrium growth technique for preparing PbSx Se1-x epilayers |
| 04/24/1979 | US4151420 Apparatus for the formation of epitaxial layers doped with conductivity-determining impurities by ion deposition |
| 04/03/1979 | US4147573 Method of depositing III-V compounds on group IV element wafers by the cluster ion technique |
| 04/03/1979 | US4147572 Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique |
| 02/20/1979 | US4140546 Vapor deposition while irradiating with ion beam |
| 02/06/1979 | US4137865 Molecular beam apparatus for processing a plurality of substrates |
| 01/09/1979 | US4133702 Method of producing structured layers on a substrate being irradiated with two coherent particle beams |
| 01/02/1979 | US4132571 Silicides |
| 09/19/1978 | US4115163 Method of growing epitaxial semiconductor films utilizing radiant heating |
| 08/15/1978 | CA1036470A1 Deposition of solid semiconductor compositions and novel semiconductor materials |
| 06/13/1978 | US4094268 Apparatus for growing HgI2 crystals |
| 04/25/1978 | US4086555 Lead, tin, tellurium |
| 04/25/1978 | US4086108 Radiation |
| 03/28/1978 | US4080926 Apparatus for growing films by flash vaporization |
| 02/28/1978 | US4076866 Method of growing films by flash vaporization |
| 01/31/1978 | US4071383 Process for fabrication of dielectric optical waveguide devices |
| 11/15/1977 | US4058430 Method for producing compound thin films |
| 11/08/1977 | US4057476 Schottkey barrier diodes |
| 09/27/1977 | US4050964 Growing smooth epitaxial layers on misoriented substrates |
| 09/20/1977 | US4048955 Continuous chemical vapor deposition reactor |
| 08/16/1977 | US4042447 Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate |
| 06/21/1977 | US4030964 Temperature cycling vapor deposition HgI2 crystal growth |
| 04/05/1977 | US4015922 Reinforcement |
| 03/22/1977 | US4013533 Volatilization and deposition of a semi-conductor substance and a metallic doping impurity |
| 03/22/1977 | US4013502 Stencil process for high resolution pattern replication |
| 01/04/1977 | US4001858 Simultaneous molecular beam deposition of monocrystalline and polycrystalline iii(a)-v(a) compounds to produce semiconductor devices |
| 01/04/1977 | US4000717 Apparatus for epitaxial deposition |
| 12/21/1976 | US3998659 Solar cell with semiconductor particles and method of fabrication |
| 09/07/1976 | US3979490 Method for the manufacture of tubular bodies of semiconductor material |
| 09/07/1976 | US3979271 Deposition of solid semiconductor compositions and novel semiconductor materials |
| 08/03/1976 | US3972689 Method for vapor growing crystals |
| 04/06/1976 | US3949119 Method of gas doping of vacuum evaporated epitaxial silicon films |
| 03/02/1976 | US3941624 Tin, gallium |