| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 04/09/2002 | US6368406 Nanocrystalline intermetallic powders made by laser evaporation |
| 04/09/2002 | US6367267 Integrated phase separator for ultra high vacuum system |
| 04/04/2002 | US20020038892 Boride-based substrate for growing semiconducting layers thereon and a semiconductor devise using the same |
| 04/04/2002 | US20020038627 Apparatus for growing low defect density silicon carbide |
| 04/02/2002 | US6365478 Solid state electronic device fabrication using crystalline defect control |
| 03/28/2002 | WO2002024984A1 Tool and method for in situ vapor phase deposition source material reloading and maintenance |
| 03/28/2002 | WO2002024983A2 Integrated phase separator for ultra high vacuum system |
| 03/28/2002 | WO2001094658A3 Process for production of fullerene coatings |
| 03/28/2002 | US20020037249 Method of producing oxide whiskers, oxide whiskers, and photoelectric conversion apparatus |
| 03/28/2002 | US20020036281 Spin electronic material and fabrication method thereof |
| 03/27/2002 | EP1191579A2 Solid state electronic device fabrication using crystalline defect control |
| 03/27/2002 | EP1191120A2 In situ purification of compound phosphorus source for solid source molecular beam epitaxy |
| 03/27/2002 | EP1099014B1 Method and device for producing at least one silicon carbide monocrystal |
| 03/26/2002 | US6361598 Method for preparing high temperature superconductor |
| 03/21/2002 | WO2002023603A1 Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates |
| 03/21/2002 | WO2002022918A1 Nanocrystalline intermetallic powders made by laser evaporation |
| 03/21/2002 | US20020034861 Method of growing p-type ZnO based oxide semiconductor layer and method of manufacturing semiconductor light emitting device |
| 03/20/2002 | EP0950132A4 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
| 03/19/2002 | US6358822 Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE |
| 03/19/2002 | US6358378 Method for fabricating ZnO thin film for ultraviolet detection and emission source operated at room temperature, and apparatus therefor |
| 03/14/2002 | WO2002021575A2 Method of producing silicon carbide and various forms thereof |
| 03/14/2002 | WO2002020880A1 Production of low defect epitaxial films |
| 03/14/2002 | WO2002020879A1 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby |
| 03/14/2002 | WO2001043165A3 Oxide films containing p-type dopant and process for preparing same |
| 03/14/2002 | US20020031680 Zinc oxide films containing p-type dopant and process for preparing same |
| 03/14/2002 | US20020031615 Process for production of ultrathin protective overcoats |
| 03/07/2002 | WO2002019352A1 Magnetic semiconductor material and method for preparation thereof |
| 03/07/2002 | WO2002018678A1 Method for preparing single crystal oxide thin film |
| 03/07/2002 | WO2002018668A1 Titanium dioxide cobalt magnetic film and its manufacturing method |
| 03/07/2002 | US20020028531 Vapor, vacuum deposition in presence of metallic surfactant |
| 03/07/2002 | US20020026899 Apparatus and method for coating substrates with vacuum depositable materials |
| 03/07/2002 | DE10041285A1 Verfahren zur Epitaxie von (Indium, Aluminium, Gallium)-nitrid-Schichten auf Fremdsubstraten A process for the epitaxial growth of (indium, aluminum, gallium) nitride layers on foreign substrates |
| 03/06/2002 | EP1183717A1 Method for the growth of a thin silicon oxide layer on a silicon substrate surface and double reactor machine |
| 03/05/2002 | US6352884 Method for growing crystals having impurities and crystals prepared thereby |
| 02/28/2002 | US20020025621 Radical cell device and method for manufacturing groups II-VI compound semiconductor device |
| 02/28/2002 | US20020025594 Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same |
| 02/28/2002 | US20020023581 Method for growing low defect density silicon carbide |
| 02/27/2002 | EP1182282A1 Method of crystal growth, method of forming fine semiconductor structure, semiconductor device, and system |
| 02/27/2002 | EP1181401A2 Semi-insulating silicon carbide without vanadium domination |
| 02/21/2002 | DE10037566A1 Substratheizung zum gleichzeitig beidseitigen Beheizen eines Wafers Substrate heater to heat a wafer simultaneously on both sides |
| 02/20/2002 | EP0948671B1 Method for preparation of metal intercalated fullerene-like metal chalcogenides |
| 02/14/2002 | WO2002012598A1 Epitaxial wafer apparatus |
| 02/07/2002 | WO2001065590A3 Esrf source for ion plating epitaxial deposition |
| 02/07/2002 | US20020015866 Method of growing a semiconductor layer |
| 02/07/2002 | US20020015852 Multilayer thin film and its fabrication process as well as electron device |
| 02/07/2002 | US20020015793 Method of manufacturing metallic film consisting of giant single crystal grains |
| 02/07/2002 | US20020014199 Method for growing an alpha-SiC bulk single crystal |
| 02/06/2002 | EP1178520A2 Substrate heating system for heating simultaneously both sides of a wafer |
| 02/06/2002 | EP1178129A1 Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof |
| 02/05/2002 | US6344085 Device and method for producing at least one SiC single crystal |
| 02/05/2002 | US6344084 Combinatorial molecular layer epitaxy device |
| 02/01/2002 | WO2001011116A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
| 02/01/2002 | CA2383400A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
| 01/31/2002 | WO2002009159A2 Thin-film metallic oxide structure and process for fabricating same |
| 01/31/2002 | WO2002008121A2 A method for shaping a nanotube and a nanotube shaped thereby |
| 01/31/2002 | WO2002008120A2 Telescoped multiwall nanotube and manufacture thereof |
| 01/31/2002 | WO2001055472A3 Method and apparatus for in-situ deposition of epitaxial thin film of high-temperature superconductors and other complex oxides under high-pressure |
| 01/31/2002 | WO2000008691A9 Zinc oxide films containing p-type dopant and process for preparing same |
| 01/31/2002 | US20020011201 Controlled source for material processing |
| 01/30/2002 | EP1176231A2 A boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same |
| 01/30/2002 | EP1176230A1 Method of preparing crystalline alkaline earth metal oxides on an Si substrate |
| 01/29/2002 | US6342313 Oxide films and process for preparing same |
| 01/29/2002 | US6342265 Apparatus and method for in-situ thickness and stoichiometry measurement of thin films |
| 01/23/2002 | EP0720418B1 Manufacturing method for ternary compound films |
| 01/22/2002 | US6340393 Method for synthesizing n-type diamond having low resistance |
| 01/17/2002 | WO2002005296A1 Ultraviolet-transparent conductive film and process for producing the same |
| 01/17/2002 | WO2001026164A3 Control of oxide layer reaction rates |
| 01/17/2002 | US20020006733 Ferroelectric film on silicon substrate |
| 01/17/2002 | US20020005566 Process for growing epitaxial gallium nitride and composite wafers |
| 01/10/2002 | WO2001008169A3 Superconductor coated conductors with reduced a.c. loss |
| 01/08/2002 | US6337991 Temperature sensor comprising single crystal substrate, buffer layer comprising cerium dioxide, yttrium barium copper oxide layer, epitaxial thin film of oxide having perovskite structure which undergoes ferromagnetic phase transition |
| 01/08/2002 | US6336971 Method and apparatus for producing silicon carbide single crystal |
| 01/03/2002 | WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 01/03/2002 | US20020001977 Forming a nanowire under thermal conditions and under non-catalytic conditions; catalysts for selective dehydrogenation of ethanol to acetaldehyde such as copper on silica |
| 01/03/2002 | US20020001680 Process for production of ultrathin protective overcoats |
| 01/03/2002 | US20020000189 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer |
| 01/02/2002 | CN1329683A Simulated diamond gemstones formed of aluminum nitride and aluminium nitride silicon carbide alloys |
| 12/27/2001 | US20010054384 Vaporiser for generating feed gas for an arc chamber |
| 12/27/2001 | US20010054375 Method of suppressing convection in a fluid in a cylindrical vessel |
| 12/26/2001 | CN1076850C Ferroelectric thin film and their preparation method |
| 12/25/2001 | US6333111 Method of producing layered aluminum fine particles and use thereof |
| 12/19/2001 | EP1164620A2 Plasma display panel suitable for high-quality display and production method |
| 12/19/2001 | EP1164211A1 Method for growing single crystal of silicon carbide |
| 12/19/2001 | EP1164210A2 A method of growing a semiconductor layer |
| 12/13/2001 | WO2001095380A1 Preparation method of a coating of gallium nitride |
| 12/13/2001 | WO2001094658A2 Process for production of fullerene coatings |
| 12/12/2001 | EP1161986A2 Apparatus for combinatorial molecular beam epitaxy |
| 12/12/2001 | EP0947466B1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film |
| 12/11/2001 | US6329088 Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00> |
| 12/11/2001 | CA2019077C Coated cutting insert |
| 12/06/2001 | WO2001092608A2 Method and apparatus for preparation of binary and higher order compounds and devices fabricated using same |
| 12/06/2001 | WO2001091922A2 Process for production of ultrathin protective overcoats |
| 12/06/2001 | WO2001026165A3 Method and apparatus for forming buffer layers |
| 12/06/2001 | US20010049201 Separating the GaN layer from the sapphire substrate by radiating a laser onto the back side of the sapphire substrate. |
| 12/06/2001 | US20010049029 Process control |
| 12/06/2001 | US20010047751 Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates |
| 12/05/2001 | EP0650465B1 Conversion of fullerenes to diamond |
| 11/29/2001 | WO2001008232A3 Surface conditioning process for making multi-layer articles |
| 11/29/2001 | WO2001008170A3 Enhanced purity oxide buffer layer formation |
| 11/29/2001 | DE10024857A1 Production of a partially single crystalline silicon carbide layer in a silicon wafer comprises preparing a silicon wafer, implanting carbon ions into the wafer by ion implantation, and subjecting the wafer to a thermal radiation source |