C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials

Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
11/2002
11/21/2002	CA2443512A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
11/20/2002	CN1380449A Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate
11/19/2002	CA2238857C Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same
11/14/2002	WO2002090625A1 A method to produce germanium layers
11/14/2002	US20020167010 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
11/14/2002	US20020167005 Semiconductor structure including low-leakage, high crystalline dielectric materials and methods of forming same
11/14/2002	US20020166501 Epitaxy with compliant layers of group-V species
11/14/2002	CA2445772A1 A method to produce germanium layers
11/12/2002	US6479111 Process for production of ultrathin protective overcoats
11/07/2002	WO2002089188A2 Semiconductor structures utilizing binary metal oxide layers
11/06/2002	EP1152827A4 Carbide and oxycarbide based compositions and nanorods
11/05/2002	US6475825 Process for preparing zinc oxide films containing p-type dopant
11/05/2002	US6475278 Molecular beam source and molecular beam epitaxy apparatus
10/2002
10/31/2002	WO2002086200A1 Production method for atomic and molecular patterns on surfaces and nanostructured devices
10/31/2002	WO2002085778A1 Method for the production of one-dimensional nanostructures and nanostructures obtained according to said method
10/31/2002	US20020158245 Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
10/31/2002	CA2444865A1 Method for the production of one-dimensional nanostructures and nanostructures obtained according to said method
10/30/2002	CN1377311A Silicon carbide epitaxial layers grown on substrates offcut towards
10/29/2002	US6472241 Radical cell device and method for manufacturing groups II-VI compound semiconductor device
10/29/2002	US6472030 Preparation of laser deposited oriented films and membranes
10/24/2002	WO2002083976A1 Apparatus and method for epitaxial sputter deposition of multi-compound magnetic epilayers with high deposition rate
10/24/2002	WO2002083975A1 Apparatus and method for epitaxial sputter deposition of epilayers and high quality films
10/24/2002	US20020152953 Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy
10/23/2002	CN1093085C Silicon carbide gemstones
10/22/2002	US6468591 Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates
10/17/2002	WO2002082513A1 Semiconductor structures and devices utilizing a stable template
10/17/2002	WO2002081789A1 METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE
10/17/2002	WO2002081787A1 Tank for epitaxy installation and installation comprising one such tank
10/16/2002	EP1249522A2 Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
10/16/2002	EP1249521A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
10/16/2002	CN1092716C Growing method for antimony induced carbon 60 film and carbon 60 film
10/15/2002	US6464781 Method of suppressing convection in a fluid in a cylindrical vessel
10/15/2002	US6464780 Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers
10/10/2002	US20020146562 Electrical insulating vapor grown carbon fiber and method for producing the same, and use thereof
10/10/2002	US20020144838 Enhanced high temperature coated superconductors
10/10/2002	US20020144647 Heating elemental silicon and elemental carbon in a furnace under vacuum at high temperature to vaporize silicon and convert the carbon to silicon carbide
10/10/2002	US20020144645 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
10/10/2002	US20020144643 Method for forming a single crystalline film
10/09/2002	EP1246695A1 Carbide- and oxycarbide-based compositions, rigid porous structures including the same, and methods of making and using the same
10/08/2002	US6461737 Epitaxial compound structure and device comprising same
10/03/2002	US20020140013 Structure and method for fabricating semiconductor structures and devices utilizing a stable template
10/02/2002	DE10113549A1 Process for growing nanotubes used in the production of a semiconductor element comprises contacting a substrate with a metal compound, contacting with a basic solution, removing the photolacquer, and growing nanotubes on the metal
09/2002
09/26/2002	WO2002075026A1 Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate
09/26/2002	US20020134300 Method of depositing buffer layers on biaxially textured metal substrates
09/26/2002	CA2441204A1 Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate
09/25/2002	WO2003078701A1 Mbe-method for the production of a gallium manganese nitride ferromagnetic film
09/25/2002	EP1243674A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
09/25/2002	CN1371433A Epitaxial growing method for aluminium nitride and growing chamber therefor
09/19/2002	WO2002072909A1 Laminated film and method of forming film
09/19/2002	US20020130610 Crystals comprising single-walled carbon nanotubes
09/18/2002	EP0826131B1 Unibody crucible
09/17/2002	US6451711 Semiconductors, gadolinium oxide
09/17/2002	US6451450 Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom
09/17/2002	US6451112 Method and apparatus for fabricating high quality single crystal
09/12/2002	WO2002070793A1 Ii-vi group or iii-v group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics
09/12/2002	WO2002043466A3 Non-thermionic sputter material transport device, methods of use, and materials produced thereby
09/12/2002	US20020127766 Semiconductor wafer manufacturing process
09/12/2002	US20020126265 Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member , thin film forming apparatus and thin film forming method for producing metal film and metal oxide film
09/11/2002	EP1238414A1 Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substrates
09/10/2002	US6447734 Vaporization and cracker cell apparatus
09/10/2002	US6447606 Method for producing a single-crystalline film of KLN or KLNT
09/10/2002	US6447604 Depositing nitride homoepitaxial layer by vapor phase epitaxy (vpe)
09/06/2002	WO2001008169A9 Superconductor coated conductors with reduced a.c. loss
09/05/2002	US20020121460 Used either as catalyst and/or catalyst supports in fluid phase catalytic chemical reactions, such as hydrogenation, hydrodesulfurization, oxidation and isomerization
08/2002
08/29/2002	US20020119893 Method of forming a superconductor
08/29/2002	US20020119680 Method of fabricating a semiconductor structure having quantum wires and a seminconductor device including such structure
08/29/2002	US20020119659 Crystal growth method of an oxide and multi-layered structure of oxides
08/29/2002	US20020117467 Evaporating drops of transition metal intermetallic forming ultrafine three-dimensional structure on substrate surface; electroconductivity; semiconductors
08/29/2002	US20020117103 Method of growing a semiconductor multi-layer structure
08/28/2002	EP1235256A2 A method of growing a semiconductor multi-layer structure
08/27/2002	US6440214 Method of growing a semiconductor layer
08/27/2002	US6440211 Method of depositing buffer layers on biaxially textured metal substrates
08/22/2002	WO2002064852A1 Apparatus for fabricating semiconductor structures
08/22/2002	US20020114756 Tailoring nanocrystalline diamond film properties
08/21/2002	EP1233085A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
08/20/2002	US6436186 Substrate wafer for high temperature/high frequency semiconductor electronic element; close contact stacking base material and polycrystalline plate; interposing organic or inorganic substance; heating for unidirectional orientation
08/15/2002	US20020108847 Non-thermionic sputter material transport device, methods of use, and materials produced thereby
08/14/2002	CN1364322A Coated conductor thick film precursor
08/14/2002	CN1364321A Multi-layer articles and method of making same
08/14/2002	CN1364320A Joint high temperature superconducting coated tapes
08/08/2002	WO2002061185A1 Particle beam biaxial orientation of a substrate for epitaxial criystal growth
08/08/2002	WO2001008232A9 Surface conditioning process for making multi-layer articles
08/08/2002	US20020104984 Method of producing silicon carbide: heating and lighting elements
08/08/2002	US20020104478 Silicon carbide single crystal and process for producing the same
08/06/2002	US6428635 Substrates for superconductors
08/06/2002	US6428621 Method for growing low defect density silicon carbide
08/01/2002	WO2002059945A2 Oxidized film structure and method of making epitaxial metal oxide structure
08/01/2002	US20020102418 Oxidized film structure and method of making epitaxial metal oxide structure
07/2002
07/30/2002	US6426320 Controlling velocity
07/25/2002	WO2002021575A3 Method of producing silicon carbide and various forms thereof
07/25/2002	WO2001011428A9 Superconductor articles, compositions, and methods for making same
07/25/2002	WO2001008233A9 Joint high temperature superconducting coated tapes
07/25/2002	WO2001008170A9 Enhanced purity oxide buffer layer formation
07/25/2002	US20020098346 Reacting substrate having a surface-exposed monolayer with a bifunctional reagent that reacts with exposed reactive group, producing coupling layer having exposed reactive group with which reactive group of selected compound can react
07/25/2002	US20020096108 Device having a foil-lined crucible for the sublimation growth of an SiC single crystal
07/25/2002	US20020096105 Dielectric film and method for forming the same
07/18/2002	WO2002040417A3 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby
07/16/2002	US6419742 method of forming lattice matched layer over a surface of a silicon substrate
07/11/2002	WO2002053813A1 Silicon carbide single crystal, and method and apparatus for producing the same
07/11/2002	US20020088391 Seed crystal holder with lateral mount for an SiC seed crystal

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