C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials

Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
11/2006
11/16/2006	US20060254503 Seed layers, cap layers, and thin films and methods of making thereof
11/16/2006	US20060254502 Printable electric circuits, electronic components and method of forming the same
11/15/2006	EP0885316B1 Method for producing metal oxide nanorods, metal oxide nanorods and composite material containing these nanorods thus obtained
11/15/2006	CN1284887C Method of making sic single crystal and apparatus for making sic single crystal
11/14/2006	US7135074 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
11/14/2006	US7135072 Methods of fabricating silicon carbide crystals
11/09/2006	US20060252271 Atomic layer deposition using photo-enhanced bond reconfiguration
11/09/2006	US20060249075 Semiconductor chip with a porous single crystal layer and manufacturing method of the same
11/09/2006	US20060249074 Method for supplying hydrogen gas in silicon single-crystal growth, and method for manufacturing silicon single-crystal
11/09/2006	US20060249073 Method of heat treatment and heat treatment apparatus
11/08/2006	EP1198846B1 Enhanced high temperature superconductor coated elements
11/02/2006	US20060243196 Methods for epitaxial silicon growth
11/02/2006	US20060243195 Epitaxy with compliant layers of group-V species
11/02/2006	US20060243194 Method of forming a crystalline phase material
11/02/2006	EP1717846A1 Vapor-phase deposition method
11/01/2006	CN1282770C Device and method for growng large diameter 6H-SiC monocrystal with semiconductor property
10/2006
10/26/2006	WO2006113657A1 Method of and system for forming sic crystals having spatially uniform doping impurities
10/26/2006	WO2006113539A2 Semiconductor devices having gallium nitride epilayers on diamond substrates
10/26/2006	WO2006111618A1 Source, an arrangement for installing a source, and a method for installing and removing a source
10/26/2006	US20060237740 Mbe growth of an algan layer or algan multilayer structure
10/26/2006	US20060236923 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
10/26/2006	US20060236922 Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device
10/26/2006	US20060236921 Method of cleaning a substrate surface from a crystal nucleus
10/26/2006	US20060236920 Fabrication method of semiconductor device
10/26/2006	US20060236919 Process for producing single crystal and silicon crystal wafer
10/25/2006	EP1713948A2 Vacuum deposition method and sealed-type evaporation source apparatus for vacuum deposition
10/25/2006	CN1853285A A method for making biaxially textured layers on non-textured substrates, in particular for making intermediate buffer layers in superconductive composite tapes
10/25/2006	CN1853001A Annealing single crystal chemical vapor depositon diamonds
10/19/2006	WO2006110512A1 Seeded growth process for preparing aluminum nitride single crystals
10/19/2006	US20060233969 Hybrid beam deposition system and methods for fabricating metal oxide-zno films, p-type zno films, and zno-based II-VI compound semiconductor devices
10/19/2006	US20060231017 Atomic layer deposition methods and chemical vapor deposition methods
10/19/2006	US20060231016 Deposition apparatuses
10/19/2006	US20060231015 Single crystalline diamond and producing method thereof
10/18/2006	CN1849417A Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
10/12/2006	WO2006108089A1 Dense, shaped articles constructed of a refractory material and methods of preparing such articles
10/12/2006	US20060225645 Three inch silicon carbide wafer with low warp, bow, and TTV
10/12/2006	US20060225644 Vertical group III-nitride light emitting device and method for manufacturing the same
10/12/2006	US20060225643 AlGaN substrate and production method thereof
10/12/2006	US20060225642 Method of forming semiconductor crystal
10/10/2006	US7119400 Isotopically pure silicon-on-insulator wafers and method of making same
10/10/2006	US7118813 used for coating epitaxial films in the fabrication of electronic and opto-electronic devices such as laser diodes, light emitting diodes, transistors and detectors
10/10/2006	US7118782 Method for manufacturing diamond coatings
10/05/2006	US20060219160 Method and system for forming a variable thickness seed layer
10/04/2006	EP1706903A1 Isotopically pure silicon-on-insulator wafers and method of making same
10/03/2006	US7115521 Epitaxial semiconductor deposition methods and structures
10/03/2006	US7115241 Ultrahard diamonds and method of making thereof
10/03/2006	US7115167 Method of growing a semiconductor multi-layer structure
10/03/2006	US7115166 Systems and methods for forming strontium- and/or barium-containing layers
09/2006
09/28/2006	US20060216161 Material evaporation chamber with differential vacuum pumping
09/28/2006	US20060213430 Seeded single crystal silicon carbide growth and resulting crystals
09/28/2006	US20060213429 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
09/27/2006	CN1276999C Method for growing SiC monocrystals
09/21/2006	CA2597623A1 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
09/20/2006	EP1181401B1 Semi-insulating silicon carbide without vanadium domination
09/20/2006	CN1276503C ZnO/saphire substrate and its making process
09/19/2006	US7108748 Low temperature load and bake
09/14/2006	WO2006062955B1 Process for producing high quality large size silicon carbide crystals
09/14/2006	US20060201415 Patterned ferroelectric thin films for microwave devices
09/14/2006	US20060201414 Low temperature load and bake
09/14/2006	US20060201413 Method for producing silicon epitaxial wafer and silicon epitaxial wafer
09/13/2006	CN1833311A Epitaxial growth process
09/12/2006	US7105055 In situ growth of oxide and silicon layers
09/07/2006	US20060196413 Forming method for polymeric laminated wafers comprising different film materials
09/07/2006	US20060196412 Method and casting mold for producing an optical semiconductor module
09/07/2006	US20060196411 Vapor phase epitaxy apparatus and irregular gas mixture avoidance method for use therewith
09/07/2006	DE19537430B4 Verfahren zum Herstellen von hochreinem Siliciumcarbidpulver und Verfahren zum Herstellen eines Siliciumcarbid-Einkristalls A method for producing high purity silicon carbide powder and method for producing a silicon carbide single crystal
09/06/2006	CN1829829A Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
09/06/2006	CN1273655C Simulated diamond gemstones formed of aluminum nitride and aluminium nitride silicon carbide alloys
09/05/2006	US7102171 Magnetic semiconductor material and method for preparation thereof
09/05/2006	US7101435 Methods for epitaxial silicon growth
08/2006
08/31/2006	WO2006091598A2 Effusion cell valve
08/31/2006	WO2006090104A1 Apparatus and process for crystal growth
08/31/2006	US20060191474 Method and structure for fabricating III-V nitride layers on silicon substrates
08/31/2006	US20060191473 Method for manufacturing semiconductor device, integrated circuit, electrooptics device, and electronic apparatus
08/24/2006	US20060185583 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
08/24/2006	US20060185582 High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials
08/24/2006	US20060185581 Method for producing a semiconductor wafer
08/23/2006	EP1492908A4 Influence of surface geometry on metal properties
08/23/2006	EP0859879B2 A method for epitaxially growing objects and a device for such a growth
08/23/2006	CN1823008A Tough diamonds and method of making thereof
08/22/2006	US7094675 Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same
08/22/2006	US7094288 Method for producing a positively doped semiconductor with large forbidden band
08/17/2006	US20060180077 Method of growing semiconductor crystal
08/17/2006	US20060180076 Vapor deposition apparatus and vapor deposition method
08/16/2006	CN1270350C Method for epitaxial coating semiconductor chip, and semiconductor chip opitaxial coated
08/16/2006	CN1269999C Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate
08/15/2006	US7091129 Atomic layer deposition using photo-enhanced bond reconfiguration
08/10/2006	WO2006082467A1 Substrate for crystal growing a nitride semiconductor
08/10/2006	US20060178000 Epitaxial growth process
08/10/2006	US20060174826 Tantalum based crucible
08/10/2006	US20060174825 Method of forming semi-insulating silicon carbide single crystal
08/10/2006	US20060174824 Avalanche multiplication photosensor employing extremely thin molecular crystal and process for fabricating the same
08/10/2006	US20060174823 Surface acoustic wave devices and associated casting methods
08/08/2006	US7087114 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
08/02/2006	EP1230448B1 Patterned carbon nanotubes
08/02/2006	CN1811008A Epitaxial process of nanometer crystal film of ferroelectric lead zirconate-titanate (PZT) material
08/01/2006	US7084049 Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate
07/2006
07/27/2006	WO2005065425A3 Localized synthesis and self-assembly of nanostructures
07/27/2006	US20060166831 Method of forming thin film on base substance via intermediate layer
07/26/2006	EP1296363B1 Method of manufacturing group-iii nitride compound semiconductor device

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