| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 02/20/2007 | US7179731 Hypercontacting |
| 02/20/2007 | US7179667 Semiconductor base material and method of manufacturing the material |
| 02/20/2007 | US7179329 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices |
| 02/15/2007 | WO2007018555A2 Ultratough cvd single crystal diamond and three dimensional growth thereof |
| 02/15/2007 | WO2007018216A1 ZnO CRYSTAL, METHOD FOR GROWING THE CRYSTAL, AND METHOD FOR MANUFACTURE OF LIGHT-EMITTING ELEMENT |
| 02/15/2007 | WO2006097804B1 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
| 02/15/2007 | WO2006091598A3 Effusion cell valve |
| 02/15/2007 | US20070034145 Single crystal of silicon carbide, and method and apparatus for producing the same |
| 02/15/2007 | US20070034144 Oxide crystal growth apparatus and fabrication method using the same |
| 02/15/2007 | US20070034143 Crystal growth apparatus and method of producing a crystal |
| 02/15/2007 | US20070034142 Methods of forming nanocrystals |
| 02/13/2007 | US7175735 Method and apparatus for manufacturing coated conductor |
| 02/13/2007 | US7175709 Epitaxy layer and method of forming the same |
| 02/01/2007 | US20070022947 Process for preparing p-n junctions having a p-type ZnO film |
| 02/01/2007 | US20070022946 Recovering purified water and potassium chloride from spent basic hydrogen peroxide |
| 02/01/2007 | US20070022945 Methods of fabricating silicon carbide crystals |
| 01/30/2007 | US7169730 Modified carbide and oxycarbide containing catalysts and methods of making and using thereof |
| 01/30/2007 | US7169619 Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| 01/25/2007 | US20070020536 Laser beam pattern mask and crystallization method using the same |
| 01/25/2007 | US20070020403 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
| 01/25/2007 | US20070017439 Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same |
| 01/25/2007 | US20070017438 Method of forming dislocation-free strained thin films |
| 01/24/2007 | EP1476900B1 Method for forming an oxide layer on a gaas-based semiconductor structure |
| 01/24/2007 | EP0864537B1 Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same |
| 01/24/2007 | CN1901222A Method and apparatus for epitaxially coating semiconductor wafer, and coated semiconductor wafer |
| 01/24/2007 | CN1296969C Method of forming semiconductor device |
| 01/18/2007 | WO2007008726A2 Use of surfactants to control unintentional dopant in semiconductors |
| 01/18/2007 | WO2007008606A1 Method and system for deposition tuning in an epitaxial film growth apparatus |
| 01/18/2007 | WO2006097804A3 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy |
| 01/18/2007 | US20070012241 Methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses |
| 01/18/2007 | US20070012240 Light emitting diode with at least two light emitting zones and method for manufacture |
| 01/17/2007 | CN1896344A Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate |
| 01/11/2007 | WO2007005438A2 Apparatuses and methods for detecting defects in semiconductor workpieces |
| 01/11/2007 | WO2006041660A3 100 mm silicon carbide wafer with low micropipe density |
| 01/11/2007 | US20070006802 N-type bulk single crystal zinc oxide |
| 01/11/2007 | US20070006801 Use of surfactants to control unintentional dopant in semiconductors |
| 01/11/2007 | US20070006800 Methods of selectively forming an epitaxial semiconductor layer using ultra high vacuum chemical vapor deposition technique and batch-type ultra high vacuum chemical vapor deposition apparatus used therein |
| 01/11/2007 | US20070006799 Silicon wafer support fixture with roughended surface |
| 01/11/2007 | US20070006798 Systems and methods for forming strontium-and/or barium-containing layers |
| 01/11/2007 | DE102005031692A1 New high ohmic silicon carbide single crystals, useful as substrates in semiconductor components, have controlled, low content of sulfur as electrically active multiple donor component |
| 01/10/2007 | EP1740742A1 Manufacture of cadmium mercury telluride |
| 01/10/2007 | CN1894446A Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 01/10/2007 | CN1891866A Growth of colorless silicon carbide crystal |
| 01/09/2007 | US7161173 P-type group II-VI semiconductor compounds |
| 01/04/2007 | WO2007001343A2 Nanostructured fuel cell electrode |
| 01/04/2007 | US20070000435 Method of manufacturing a wafer |
| 01/04/2007 | US20070000434 Apparatuses and methods for detecting defects in semiconductor workpieces |
| 01/04/2007 | US20070000433 III-nitride semiconductor device fabrication |
| 01/04/2007 | US20070000432 Method for growth of silicon carbide single crystal, silicon carbide seed crystal, and silicon carbide single crystal |
| 01/02/2007 | US7157287 Method of substrate surface treatment for RRAM thin film deposition |
| 01/02/2007 | US7157067 Crystallization of a single crystal diamond grown by microwave plasma chemical vapor deposition; heat treatment; noncracking, nonfracturing; hardness |
| 12/28/2006 | WO2006137631A1 Fabrication method of gallium manganese nitride single crystal nanowire |
| 12/28/2006 | WO2006111618A8 Source, an arrangement for installing a source, and a method for installing and removing a source |
| 12/28/2006 | US20060288929 Polar surface preparation of nitride substrates |
| 12/28/2006 | US20060288928 Perovskite-based thin film structures on miscut semiconductor substrates |
| 12/27/2006 | EP1736760A2 Nanosensors |
| 12/27/2006 | EP1736571A1 Method of manufacturing thin crystal films |
| 12/27/2006 | EP1595280B1 Buffer structure for heteroepitaxy on a silicon substrate |
| 12/27/2006 | CN1886533A Method for manufacturing diamond coatings |
| 12/27/2006 | CN1292103C Process for preparing low-temperature phase barium metaborate monocrystalline film through magnetron sputtering |
| 12/26/2006 | US7153362 System and method for real time deposition process control based on resulting product detection |
| 12/26/2006 | US7153361 Production method of opto-electronic device array |
| 12/21/2006 | WO2006135662A2 Perovskite-based thin film structures on miscut semiconductor substrates |
| 12/21/2006 | US20060283380 Semiconductor device and method of manufacturing the same |
| 12/20/2006 | CN1880521A Li-doped p-Zn1-xMgxO crystal film and method for preparing same |
| 12/20/2006 | CN1291073C Growth of colorless silicon carbide crystals |
| 12/19/2006 | US7151007 Doped organic semiconductor materials and process for their preparation |
| 12/19/2006 | US7150911 Electrical insulating vapor grown carbon fiber and method for producing the same, and use thereof |
| 12/19/2006 | US7150789 Atomic layer deposition methods |
| 12/14/2006 | WO2005067524A3 Nanocrystal doped matrixes |
| 12/14/2006 | US20060281322 Epitaxial semiconductor deposition methods and structures |
| 12/14/2006 | US20060281283 Silicon epitaxial wafer, and silicon epitaxial wafer manufacturing method |
| 12/13/2006 | EP1732129A2 High temperature evaporator cell and method of evaporating high-melting materials |
| 12/13/2006 | EP1730072A2 Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| 12/13/2006 | CN1876899A Crucible for preparing crystal by high-temperature gas phase process and use method thereof |
| 12/13/2006 | CN1289707C Titanium dioxide cobalt magnetic film and its manufacturing method |
| 12/12/2006 | US7147715 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
| 12/12/2006 | US7147714 Manufacturing method of silicon carbide single crystals |
| 12/12/2006 | US7147713 Phase controlled sublimation |
| 12/07/2006 | US20060272574 Methods for manufacturing integrated circuits |
| 12/07/2006 | US20060272573 Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane |
| 12/07/2006 | US20060272572 Nitride semiconductor substrate and method of producing same |
| 12/07/2006 | US20060272571 Shaped thermally stable polycrystalline material and associated methods of manufacture |
| 12/06/2006 | CN1873061A Method for producing grain sizes even distributed antimony trioxide in single crystal type, and equipment |
| 11/30/2006 | WO2006127611A2 Colorless single-crystal cvd diamond at rapid growth rate |
| 11/30/2006 | US20060270199 Process for producing high-purity silicon and apparatus |
| 11/30/2006 | US20060266282 Variable temperature deposition methods |
| 11/30/2006 | US20060266281 Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof |
| 11/30/2006 | US20060266280 Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates |
| 11/29/2006 | CN1871662A Silver selenide film stoichiometry and morphology control in sputter deposition |
| 11/29/2006 | CN1870217A Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer |
| 11/28/2006 | US7141117 Method of fixing seed crystal and method of manufacturing single crystal using the same |
| 11/23/2006 | WO2006124103A1 Method and apparatus for the production of silicon carbide crystals |
| 11/23/2006 | US20060260538 Use of Cl2 and/or HCl during silicon epitaxial film formation |
| 11/23/2006 | US20060260537 Wet pet food products and method for preparation |
| 11/16/2006 | WO2006120401A1 A bulk, free-standing cubic iii-n substrate and a method for forming same |
| 11/16/2006 | US20060254507 Silicon carbide single crystal and production thereof |
| 11/16/2006 | US20060254506 Methods of depositing an elemental silicon-comprising material over a substrate |
| 11/16/2006 | US20060254505 Method and apparatus for the production of silicon carbide crystals |
| 11/16/2006 | US20060254504 Plating bath and surface treatment compositions for thin film deposition |