| Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192) |
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| 06/20/2007 | CN1322175C Preparation for r-Li ALO2 single-crystal thin-film covering layer substrate by pulsing laser deposition |
| 06/19/2007 | US7232555 Alleviated cracking and improved utilization rate and cost effectiveness; preferably both of the principal faces of the wafer are mirror-polished and the peripheral edge is ground. |
| 06/14/2007 | US20070134816 Atomic layer deposition using electron bombardment |
| 06/14/2007 | US20070131161 Design and fabrication of 6.1-a family semiconductor devices using semi-insulating alsb substrate |
| 06/14/2007 | US20070131160 Doped aluminum nitride crystals and methods of making them |
| 06/14/2007 | US20070131159 Method for epitaxial growth with selectivity |
| 06/13/2007 | EP1794254A2 Photonic crystal, conjugated polymers suitable for photonic crystals, and a method for synthesizing conjugated polymers |
| 06/13/2007 | EP1214190A4 Silicon carbide epitaxial layers grown on substrates offcut towards 1100 |
| 06/12/2007 | US7230149 Method of using carbide and/or oxycarbide containing compositions |
| 06/12/2007 | US7229498 Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys |
| 06/07/2007 | WO2007063259A1 Large-capacity high-temperature effusion cell |
| 06/06/2007 | CN1977070A Phosphorus effusion cell arrangement and method for producing molecular phosphorus |
| 06/05/2007 | US7227066 Polycrystalline optoelectronic devices based on templating technique |
| 05/31/2007 | WO2007062250A2 Large aluminum nitride crystals with reduced defects and methods of making them |
| 05/31/2007 | US20070120144 Semiconductor device having group III nitride buffer layer and growth layers |
| 05/31/2007 | US20070119367 Method for producing silicon epitaxial wafer and silicon epitaxial wafer |
| 05/30/2007 | CN1973359A Gallium oxide single crystal composite, process for producing the same, and process for producing nitride semiconductor film utilizing gallium oxide single crystal composite |
| 05/30/2007 | CN1973064A One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 05/24/2007 | US20070118936 Fine structure body, process for producing the same, and Raman spectroscopic method and apparatus |
| 05/24/2007 | US20070117358 Epitaxy layer and method of forming the same |
| 05/23/2007 | EP1786956A1 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 05/22/2007 | US7220313 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
| 05/22/2007 | US7220312 Methods for treating semiconductor substrates |
| 05/22/2007 | CA2331564C Magnetron sputter source for mbe apparatus |
| 05/17/2007 | US20070107655 Sub-resolutional laser annealing mask |
| 05/17/2007 | US20070107654 High-purity crystal growth |
| 05/16/2007 | EP1784529A1 Manufacture of cadmium mercury telluride on patterned silicon |
| 05/16/2007 | EP1784528A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer |
| 05/16/2007 | CN1965111A Manufacture of cadmium mercury telluride |
| 05/16/2007 | CN1963996A A method for orientation growth of VO2 film of pulse laser deposition Si base |
| 05/16/2007 | CN1316076C Process for Li-N codoping growth P type ZnO crystal film |
| 05/15/2007 | US7217322 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer |
| 05/10/2007 | US20070102709 P-type group ii-vi semiconductor compounds |
| 05/10/2007 | US20070101931 Method for producing semiconductor crystal |
| 05/10/2007 | US20070101930 Feature forming methods to reduce stacking fault nucleation sites |
| 05/10/2007 | US20070101928 Method of forming a layer of silicon carbide on a silicon wafer |
| 05/09/2007 | CN1958876A Monocrystal film of transparent electro-conductive oxide with structure of perovskite |
| 05/08/2007 | US7215456 Method for patterning self-assembled colloidal photonic crystals and method for fabricating 3-dimensional photonic crystal waveguides of an inverted-opal structure using the patterning method |
| 05/08/2007 | US7215411 Method of exposing wafer using scan-type exposure apparatus |
| 05/08/2007 | US7214598 Formation of lattice-tuning semiconductor substrates |
| 05/03/2007 | US20070095276 Synthesis of fibers of inorganic materials using low-melting metals |
| 05/02/2007 | CN1313656C II-VI group or III-V group based single crystal ferromagnetic compound and method for adjusting its ferromagnetic characteristics |
| 05/01/2007 | US7211146 Powder metallurgy crucible for aluminum nitride crystal growth |
| 05/01/2007 | US7211143 Sacrificial template method of fabricating a nanotube |
| 04/26/2007 | US20070090341 Group i-vii semiconductor single crystal thin film and process for producing same |
| 04/26/2007 | US20070089669 Apparatus and method for growth of a thin film |
| 04/26/2007 | DE102005049932A1 Growth of silicon carbide-germanium-volume mixed crystals, comprises producing silicon-, carbon- and germanium gas phase from two source materials containing silicon, carbon and germanium by sublimation and evaporation |
| 04/25/2007 | CN1312332C Oxide high-temperature superconductor and its production method |
| 04/25/2007 | CN1312325C Method for developping monocrystalline iron nanometer thread on silicon substrate |
| 04/24/2007 | US7208196 Oxidation of silicon nitride; overcoating metal substrate; high temperature superconductivity |
| 04/18/2007 | CN1311518C Substrate for electronic apparatus, Method for producing substrate of electronic apparatus and electronic apparatus |
| 04/12/2007 | WO2007040496A1 Silicon germanium semiconductive alloy and method of fabricating same |
| 04/12/2007 | US20070079753 Method To Deposit Functionally Graded Dielectric Films Via Chemical Vapor Deposition Using Viscous Precursors |
| 04/12/2007 | US20070079752 Coloured diamond |
| 04/12/2007 | US20070079751 Inp single crystal, gaas single crystal, and method for production thereof |
| 04/12/2007 | DE19960823B4 Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe und deren Verwendung A process for producing an epitaxially coated semiconductor wafer, and the use thereof |
| 04/11/2007 | EP1772539A1 Silicon carbide single crystal and single crystal wafer |
| 04/11/2007 | CN1946868A Vacuum deposition method and sealed-type evaporation source apparatus for vacuum deposition |
| 04/11/2007 | CN1309880C Metal strip for epitaxial coating and method for production thereof |
| 04/05/2007 | WO2007037906A2 Methods for synthesis of metal nanowires |
| 04/05/2007 | US20070077192 Tough diamonds and method of making thereof |
| 04/05/2007 | US20070074652 Method for epitaxy with low thermal budget and use thereof |
| 04/05/2007 | US20070074651 (Al, Ga, In) N-based compound semiconductor and method of fabricating the same |
| 04/04/2007 | EP1769106A1 Phosphorus effusion cell arrangement and method for producing molecular phosphorus |
| 04/04/2007 | CN1942610A Ultrahard diamonds and method of making thereof |
| 04/03/2007 | US7199015 Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| 03/29/2007 | WO2007035570A2 Method for epitaxial growth of silicon carbide |
| 03/29/2007 | US20070072320 Process for producing an epitalixal layer of galium nitride |
| 03/29/2007 | US20070068450 Novel nitrogen semiconductor compound and device fabricated using the same |
| 03/29/2007 | US20070068449 Growing method of SiC single crystal |
| 03/28/2007 | EP1768181A1 Nitride semiconductor substrate, and method for working nitride semiconductor substrate |
| 03/22/2007 | WO2007033312A2 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
| 03/22/2007 | WO2007032180A1 Process for producing epitaxial wafer and epitaxial wafer produced therefrom |
| 03/22/2007 | US20070062441 Method for epitaxial growth of silicon carbide |
| 03/22/2007 | US20070062440 Gallium nitride crystal substrate and method of producing same |
| 03/22/2007 | US20070062439 Temperature Control Method of Epitaxial Growth Apparatus |
| 03/22/2007 | US20070062438 Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 03/20/2007 | US7192482 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
| 03/15/2007 | US20070059928 Methods for synthesis of metal nanowires |
| 03/15/2007 | US20070057285 Wurtzite thin film, laminate containing wurtzite crystalline layer and their manufacturing methods |
| 03/15/2007 | US20070056507 Sublimation chamber for phase controlled sublimation |
| 03/15/2007 | US20070056506 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
| 03/14/2007 | CN1304646C Preparation of beta-FeSi2 single crystal by pulsing laser method |
| 03/13/2007 | US7189287 Atomic layer deposition using electron bombardment |
| 03/08/2007 | WO2005122691A3 Crystal growth method and apparatus |
| 03/08/2007 | US20070051302 Method of producing crystalline semiconductor material and method of fabricating semiconductor device |
| 03/08/2007 | US20070051301 Method of manufacturing sic single crystal wafer |
| 03/07/2007 | EP1215730B1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER |
| 03/06/2007 | US7186295 Quartz thin film |
| 03/01/2007 | DE102005041643A1 Semiconductor method for producing an isolated semiconductor substrate uses a masking layer with holes and an output layer |
| 02/28/2007 | EP1757717A1 Method to deposit ZnO-based crystalline layer and substrate for it |
| 02/28/2007 | EP1595280B8 Buffer structure for heteroepitaxy on a silicon substrate |
| 02/28/2007 | CN1922716A Vapor-phase growth method |
| 02/28/2007 | CN1302564C Multi-layer structure, and actuator element, capacitive element and filter element using the same |
| 02/27/2007 | US7182812 Direct synthesis of oxide nanostructures of low-melting metals |
| 02/27/2007 | US7182810 Protein temperature evaporation-controlled crystallization device and method thereof |
| 02/22/2007 | WO2007020092A1 A method of producing silicon carbide epitaxial layer |
| 02/22/2007 | US20070042127 Film growth at low pressure mediated by liquid flux and induced by activated oxygen |
| 02/21/2007 | EP1755154A1 Method and apparatus for manufacturing a zinc oxide thin film at low temperatures |
| 02/21/2007 | CN2871563Y Sulfur-compound semiconductor single crystal device for preparing lead |