Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
10/2007
10/04/2007US20070227440 Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
10/04/2007CA2646893A1 Chemically attached diamondoids for cvd diamond film nucleation
10/03/2007EP1448295A4 Modified carbide and oxycarbide containing catalysts
10/03/2007EP1177153B1 Bulk synthesis of long nanotubes of transition metal chalcogenides
10/02/2007US7276456 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same
10/02/2007US7276121 Forming improved metal nitrides
09/2007
09/27/2007WO2007107757A2 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
09/27/2007US20070221121 Method of semiconductor nanocrystal synthesis
09/26/2007EP1299900A4 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
09/25/2007US7273664 Preparation method of a coating of gallium nitride
09/25/2007US7273657 Electronics, opto-electronic, magneto-electronics and magneto-optics devices, single crystal, integrated circuits
09/20/2007US20070215037 Light irradiation apparatus, light irradiation method, crystallization apparatus, crystallization method, and semiconductor device
09/20/2007US20070215036 Method and apparatus of time and space co-divided atomic layer deposition
09/20/2007DE19913123B4 Kristallwachstumsverfahren für Dünnfilme aus BiSrCaCuO-Oxiden Crystal growth method for thin films of oxides BiSrCaCuO
09/19/2007CN101037795A Sb doped P-type ZnO crystal film and preparation method thereof
09/13/2007US20070209578 Method for producing substrate for single crystal diamond growth
09/13/2007US20070209577 Low micropipe 100 mm silicon carbide wafer
09/13/2007US20070209576 Formation of metal oxide nanowire networks (nanowebs) of low-melting metals
09/13/2007DE10083498B4 Verfahren zur Herstellung einer dünnen polykristallinen Schicht und eines supraleitenden Oxidelements A process for producing a polycrystalline thin film and a superconducting Oxidelements
09/07/2007WO2006041660A8 100 mm silicon carbide wafer with low micropipe density
09/06/2007US20070204791 Drop Tube Granulated Crystal Manufacturing Device and Granulated Crystal Manufacturing Method
09/06/2007US20070204789 Method For Evaluating Crystal Defects Of Silicon Wafer
09/05/2007EP1828446A1 Process for producing high quality large size silicon carbide crystals
09/05/2007EP1038996B1 Combinatorial molecular layer epitaxy device
09/04/2007US7264750 Single crystal ingot doped with Cerium, Europium, Terbium or Ytterbium; crystal face is composed of a plurality of smooth partial region surfaces
08/2007
08/30/2007WO2007062250A3 Large aluminum nitride crystals with reduced defects and methods of making them
08/30/2007US20070202033 Method of Using Carbide and/or Oxycarbide Containing Compositions
08/29/2007EP1825018A1 Device for vacuum deposition with recharging reservoir and corresponding vacuum deposition method
08/29/2007EP1158077B1 Method and apparatus for producing single crystal of silicon carbide
08/29/2007CN101027433A Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
08/29/2007CN101024897A Oriented growth method of ZnO micron tube
08/29/2007CN101024896A Method for synthesizing ZnO micron tube
08/29/2007CN101024893A Method for micro-wave plasma low-temperature synthesizing film
08/29/2007CN100334262C Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element
08/28/2007US7261776 Deposition of buffer layers on textured metal surfaces
08/23/2007US20070197022 Manufacture Of Cadmium Mercury Telluride
08/23/2007US20070196743 Method for crystallizing amorphous silicon into polysilicon and mask used therefor
08/23/2007US20070193519 Large area deposition in high vacuum with high thickness uniformity
08/23/2007US20070193506 Method of producing optical element
08/22/2007CN1333445C An oxide layer on a GAAS-based semiconductor structure and method of forming same
08/21/2007US7259436 Micromechanical component and corresponding production method
08/21/2007US7259409 Thin film device and its fabrication method
08/16/2007US20070190757 Vapor phase growth method
08/16/2007US20070186844 Production of high-purity, large-volume monocrystals that are especially radiation-resistant from crystal shards
08/16/2007DE10009876B4 Verfahren zum Bilden eines einkristallinen Films A method for forming a single-crystal film
08/15/2007EP1404904A4 PRODUCTION METHOD OF $g(a)-SIC WAFER
08/15/2007CN1332077C Lithium niobate substrate and manufacturing method thereof
08/15/2007CN1331594C Modified carbide and oxycarbide containing catalysts and methods of making and using thereof
08/14/2007US7255746 Nitrogen sources for molecular beam epitaxy
08/14/2007US7255743 Method of making synthetic gems comprising elements recovered from remains of a species of the kingdom animalia
08/09/2007US20070181057 Epitaxial deposition process and apparatus
08/09/2007DE102006003847A1 Verfahren und Vorrichtung zum Herstellen eines polykristallinen Keramikfilms auf einem Substrat, Kondensatorstruktur mit dem Keramikfilm und Verwendung der Kondensatorstruktur Method and apparatus for producing a polycrystalline ceramic film on a substrate, the capacitor structure with the ceramic film, and use of the capacitor structure
08/08/2007EP1461286B1 Differential stress reduction in thin films
08/02/2007WO2007087589A2 Silicon carbide formation by alternating pulses
08/02/2007US20070178671 GaN bulk growth by Ga vapor transport
08/02/2007US20070178032 Transparent ferromagnetic compound containing no magnetic impurity such as transition metal or rare earth metal and forming solid solution with element having imperfect shell, and method for adjusting ferromagnetic characteristics thereof
08/02/2007US20070175385 Silicon wafer and method for producing same
08/02/2007US20070175384 Method of fabricating a quasi-substarte wafer and semiconductor body fabricated using such a quasi-substarte wafer
08/01/2007EP1215730B9 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND PRODUCTION METHOD OF SiC WAFER
08/01/2007CN1329560C Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density
07/2007
07/26/2007US20070170428 Thin film material and method of manufacturing the same
07/26/2007US20070169688 Method for manufacturing silicon wafer
07/26/2007US20070169687 Silicon carbide formation by alternating pulses
07/26/2007US20070169686 Systems and methods for mixing reactants
07/25/2007CN101003914A Insulation cover for crucible, and fabricating method
07/24/2007US7247551 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device
07/19/2007US20070166146 Semiconductor wafer
07/19/2007US20070163490 Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby
07/19/2007US20070163489 Method of forming a layer having a single crystalline structure
07/19/2007US20070163488 Method of growing oxide thin films
07/19/2007DE102005031692B4 Verfahren zur Herstellung eines hochohmigen Siliciumcarbid-Einkristalls A process for producing a high-resistance silicon carbide single crystal
07/18/2007EP1807558A2 100 mm silicon carbide wafer with low micropipe density
07/18/2007EP1807557A1 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
07/18/2007EP1807555A2 Crystal growth method and apparatus
07/12/2007US20070157876 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
07/12/2007US20070157875 Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate
07/12/2007US20070157874 Seed and Seedholder Combinations for High Quality Growth of Large Silicon Carbide single Crystals
07/12/2007US20070157873 Method of fabrication and device comprising elongated nanosize elements
07/12/2007DE60121768T2 Verfahren zur herstellung eines halbleiterbauelements mit nitridzusammensetzung der gruppe iii A method for manufacturing a semiconductor device with nitride composition of the group iii
07/11/2007EP1806440A2 Manufacturing method of aluminum nitride single crystal and aluminum nitride single crystal
07/11/2007EP1805353A1 Method for producing gan or algan crystals
07/10/2007US7241694 Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate
07/05/2007US20070152353 Nitride-based light emitting devices and methods of manufacturing the same
07/05/2007US20070151508 Zinc oxide nanotip and fabricating method thereof
07/05/2007US20070151507 Crystallization apparatus, crystallization method, device and phase modulation element
07/04/2007EP1803840A2 Method for growing single crystal of silicon carbide
07/04/2007EP1803839A1 Fabrication method and fabrication apparatus of group III nitride crystal substance
07/03/2007USH2193 Method of growing homoepitaxial silicon carbide
07/03/2007US7238595 Epitaxial semiconductor deposition methods and structures
07/03/2007US7238425 Outer cylindrical shell and a telescoped segment partially housed within its interior cavity and partially extending from the outermost shell; use as a linear or rotational bearing in microelectromechanical systems or a constant force nanospring
06/2007
06/28/2007US20070148079 Thick single crystal diamond layer method for making it and gemstones produced from the layer
06/28/2007US20070144427 METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL
06/27/2007EP1801269A1 Process for producing a free-standing III-N layer, and free-standing III-N substrate
06/26/2007US7235819 Semiconductor device having group III nitride buffer layer and growth layers
06/26/2007US7235131 Method for forming a single crystalline film
06/26/2007US7235129 Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof
06/21/2007US20070141734 Optical method for measuring thin film growth
06/20/2007EP1797225A2 Low 1c screw dislocation density 3 inch silicon carbide wafer
06/20/2007CN1984839A Methods of forming alpha and beta tantalum films with controlled and new microstructures
06/20/2007CN1322176C Preparation for single-crystal thin film covering layer substrate with r-LiALO2
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