Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials
Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
01/2008
01/10/2008US20080010707 Ambient environment nanowire sensor
01/10/2008US20080006200 Method and apparatus for producing large, single-crystals of aluminum nitride
01/09/2008EP1874985A1 Method of and system for forming sic crystals having spatially uniform doping impurities
01/09/2008EP1874984A2 Forming method for polymeric laminated wafers comprising different film materials
01/09/2008EP1874685A1 Method and apparatus for the continuous production and functionalization of single-waled carbon nanotubes using a high frequency plasma torch
01/09/2008CN101100763A Growth device for preparing IV-VI species semiconductor single-crystal thin film
01/09/2008CN100361320C Zinc oxide films containing P-type dopant and process for preparing same
01/09/2008CN100360721C Method for mfg. ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device
01/03/2008US20080003786 Large area, uniformly low dislocation density gan substrate and process for making the same
01/03/2008US20080001165 OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GaN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH
01/03/2008US20080000414 Simultaneous irradiation of a substrate by multiple radiation sources
01/02/2008EP1873280A1 Oxygen-doped N-type gallium nitride single crystal substrate and method for producing the same
01/02/2008EP1872383A2 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
01/02/2008EP1871923A1 Source, an arrangement for installing a source, and a method for installing and removing a source
01/02/2008CN100359638C Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices
01/01/2008US7314519 Vapor-phase epitaxial apparatus and vapor phase epitaxial method
12/2007
12/27/2007WO2007149487A2 Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
12/27/2007WO2007148802A1 Method for producing zinc oxide semiconductor crystal
12/27/2007WO2007148615A1 METHOD FOR GROWING AlxGa1-xN CRYSTAL, AND AlxGa1-xN CRYSTAL SUBSTRATE
12/27/2007DE102006056390A1 Crucible for making semiconductor material crystals, e.g. gallium arsenide in molecular beam epitaxy, comprises at least two parts, base and top joined at circumference forming a joint, where crucible is provided with coating layer
12/26/2007EP1868959A1 Dense, shaped articles constructed of a refractory material and methods of preparing such articles
12/26/2007CN101092737A Method for preparing Nano ultrathin wafer possessing closed packing structure
12/26/2007CN101092735A Multi-piece ceramic crucible and method for making thereof
12/26/2007CN101091893A Vacuum tube furnace for preparing Nano material
12/20/2007US20070290408 Annealing single crystal chemical vapor deposition diamonds
12/20/2007US20070289526 Multi-piece ceramic crucible and method for making thereof
12/19/2007EP1866464A1 Seeded growth process for preparing aluminum nitride single crystals
12/19/2007EP1215310B1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF
12/19/2007CN100356506C Crystal mask, amorphous silicon crystallization method and method of manufacturing array base plate using same
12/18/2007US7309477 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
12/18/2007US7309476 Diamondoid-based components in nanoscale construction
12/18/2007US7309392 Lithium niobate substrate and method of producing the same
12/13/2007WO2007050133A3 Method and composition for adhering materials together
12/13/2007US20070283880 Apparatus and method for the production of bulk silicon carbide single crystals
12/12/2007EP1865095A2 Method of growing gallium nitride crystal
12/12/2007CN101086963A Method of growing gallium nitride crystale
12/06/2007US20070281081 Vacuum Deposition Method and Sealed-Type Evaporation Source Apparatus for Vacuum Deposition
12/06/2007US20070280848 Methods Of Forming Alpha And Beta Tantalum Films With Controlled And New Microstructures
12/06/2007US20070277731 Method and apparatus for growing GaN bulk single crystals
12/06/2007US20070277727 Melt surface position monitoring apparatus in silicon single crystal growth process
12/05/2007CN101084330A Low micropipe 100 mm silicon carbide wafer
12/04/2007US7303990 Nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device
12/04/2007US7303815 Multilayer ribbon; epitaxial deposits; laser ablation
12/04/2007US7303632 Vapor assisted growth of gallium nitride
12/04/2007CA2244262C Growth of colorless silicon carbide crystals
11/2007
11/29/2007WO2007135965A1 Method for producing silicon carbide single crystal
11/28/2007CN101080516A Method for producing gan or algan crystals
11/22/2007WO2006094313A3 Forming method for polymeric laminated wafers comprising different film materials
11/22/2007US20070266934 Method of forming a silicon dioxide film
11/22/2007US20070266933 Manufacturing method of semiconductor device
11/22/2007US20070266932 Vapor phase growth apparatus and method for vapor phase growth
11/22/2007US20070266929 Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
11/15/2007WO2007130916A2 A method of ultra-shallow junction formation using si film alloyed with carbon
11/15/2007WO2007107757A3 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
11/15/2007US20070262322 Monocrystalline Silicon Carbide Ingot, Monocrystalline Silicon Carbide Wafer and Method of Manufacturing the Same
11/14/2007EP1518005B1 Material evaporation chamber with differential vacuum pumping
11/14/2007EP1448804B1 METHOD OF SYNTHESIZING A COMPOUND OF THE FORMULA M sb n+1 /sb AX sb n /sb , FILM OF THE COMPOUND AND ITS USE
11/14/2007EP1103076B1 Zinc oxide films containing p-type dopant and process for preparing same
11/14/2007CN101072901A Process for producing high quality large size silicon carbide crystals
11/14/2007CN101070617A Method for preparing briented growth dielectric-constant adjustable strontium lead titanate film
11/13/2007US7294200 Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device
11/08/2007US20070259112 Gas manifolds for use during epitaxial film formation
11/08/2007US20070256627 Method of ultra-shallow junction formation using si film alloyed with carbon
11/08/2007US20070256626 Growth of Nitride Semiconductor Crystals
11/07/2007EP1852527A1 Silicon carbide single crystal, silicon carbide single crystal wafer, and process for producing the same
11/07/2007EP1851368A1 Apparatus and process for crystal growth
11/07/2007EP1851355A2 Effusion cell valve
11/06/2007US7291224 Covering assembly for crucible used for evaporation of raw materials
11/06/2007US7291223 Epitaxial organic layered structure and method for making
11/01/2007WO2007123735A1 Methods for controllable doping of aluminum nitride bulk crystals
11/01/2007US20070251446 Chemically attached diamondoids for CVD diamond film nucleation
11/01/2007US20070251445 forming a tantalum containing multilayer film, using a radio frequency power to perform plasma enhanced atomic layer deposition; semiconductor integrated circuit; forming tantalum, tantalum nitride, tantalum carbonitride
11/01/2007US20070251444 PEALD Deposition of a Silicon-Based Material
11/01/2007US20070251443 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby
10/2007
10/31/2007CN101064258A Method of forming highly orientated silicon film, method of manufacturing three-dimensional semiconductor device, and three-dimensional semiconductor device
10/30/2007US7288150 Homogeneous incorporation of activator element in a storage phosphor
10/30/2007CA2417936C Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby
10/25/2007WO2007119433A1 Group iii-v nitride layer and method for producing the same
10/24/2007CN101061262A Low Ic screw dislocation 3 inch silicon carbide wafer
10/24/2007CN100345255C Vapor phase growth method for Al-containing III-V group compound semiconductor, and method and device for producing Al-containing III-V group compound semiconductor
10/18/2007WO2007117583A2 Cluster tool for epitaxial film formation
10/18/2007WO2007117576A2 Gas manifolds for use during epitaxial film formation
10/18/2007WO2006113539A3 Semiconductor devices having gallium nitride epilayers on diamond substrates
10/18/2007US20070243325 ALD method and apparatus
10/18/2007US20070240633 One hundred millimeter single crystal silicon carbide wafer
10/18/2007US20070240632 Silicon-containing layer deposition with silicon compounds
10/18/2007US20070240631 Epitaxial growth of compound nitride semiconductor structures
10/18/2007US20070240630 One hundred millimeter single crystal silicon carbide water
10/16/2007US7282268 Structure, method of manufacturing the same, and device using the same
10/11/2007US20070235653 Manufacture of Cadmium Mercury Telluride on Patterned Silicon
10/11/2007US20070234949 Atomic layer deposited titanium-doped indium oxide films
10/11/2007US20070234947 Nanoscale control of the spatial distribution, shape and size of thin films of conjugated organic molecules through the production of silicon oxide nanostructures
10/10/2007EP1843404A2 Zinc oxide films containing p-type dopant and process for preparing same
10/10/2007EP1547131A4 Large-diameter sic wafer and manufacturing method thereof
10/10/2007CN101050545A Method for developing aluminum nitride crystal in large size through flow of plasma flame
10/10/2007CN101050544A Light auxiliary MBE system, and method for developing ZnO monocrystal film
10/04/2007WO2007111967A2 Chemically attached diamondoids for cvd diamond film nucleation
10/04/2007WO2007111219A1 Method for growing iii nitride single crystal
10/04/2007WO2007033312A3 Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
10/04/2007US20070227441 Method of manufacturing epitaxial silicon wafer and apparatus thereof
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